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51. 发明申请

US20050202665A1 Method of fabricating n-type semiconductor diamond, and semiconductor diamond 有权
标题翻译：制造n型半导体金刚石和半导体金刚石的方法
公开(公告)号：US20050202665A1
公开(公告)日：2005-09-15
申请号：US11013450
申请日：2004-12-17
申请人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
发明人： Akihiko Namba , Takahiro Imai , Yoshiki Nishibayashi
IPC分类号： C30B25/02 , C30B29/04 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/44
CPC分类号： C30B25/02 , C30B29/04 , H01L21/02376 , H01L21/0243 , H01L21/02433 , H01L21/02444 , H01L21/02494 , H01L21/02527 , H01L21/02576 , H01L21/02587 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L21/041 , H01L29/66022 , H01L29/66037
摘要： An n-type diamond epitaxial layer 20 is formed by processing a single-crystalline {100} diamond substrate 10 so as to form a {111} plane, and subsequently by causing diamond to epitaxially grow while n-doping the diamond {111} plane. Further, a combination of the n-type semiconductor diamond, p-type semiconductor diamond, and non-doped diamond, obtained in the above-described way, as well as the use of p-type single-crystalline {100} diamond substrate allow for a pn junction type, a pnp junction type, an npn junction type and a pin junction type semiconductor diamond to be obtained.
摘要翻译：通过处理单晶{100}金刚石衬底10以形成{111}面，然后通过使金刚石外延生长同时n掺杂金刚石{111}面而形成n型金刚石外延层20 。此外，以上述方式获得的n型半导体金刚石，p型半导体金刚石和非掺杂金刚石以及使用p型单晶{100}金刚石衬底的组合允许对于pn结型，pnp结型，npn结型和pin结型半导体金刚石。

52. 发明申请

US20050139150A1 Diamond single crystal composite substrate and method for manufacturing the same 有权
标题翻译：金刚石单晶复合基板及其制造方法
公开(公告)号：US20050139150A1
公开(公告)日：2005-06-30
申请号：US10980152
申请日：2004-11-04
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： C01B31/06 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/04 , C30B25/20
摘要： A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
摘要翻译：一种金刚石单晶复合基板，其由具有均匀平面取向的多个金刚石单晶基板构成，并且通过气相合成在其上生长金刚石单晶整体并入，其中主体的平面取向偏离从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度，排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度，当金刚石单晶基板并排配置时，所述一个金刚石单晶基板配置在最外周部，并且配置成使得在所述一个的主平面中的<100>方向衬底在所设置的衬底的外周方向上面对，然后通过气相合成生长金刚石单晶使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶，以实现整体的整合。

53. 发明授权

US06710513B2 Surface acoustic wave device and substrate thereof 有权
标题翻译：声表面波器件及其衬底
公开(公告)号：US06710513B2
公开(公告)日：2004-03-23
申请号：US10203423
申请日：2002-08-08
申请人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
发明人： Hideaki Nakahata , Akihiro Hachigo , Natsuo Tatsumi , Takahiro Imai , Shinichi Shikata
IPC分类号： H03H925
CPC分类号： H03H9/02582 , H03H9/02574
摘要： Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
摘要翻译：提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件根据本发明的衬底20和表面声波器件10包括金刚石层22，设置在金刚石层22上的中间层24和设置在中间层24上的压电层26，压电层 26由LiNbO 3或LiTaO 3制成，中间层24由AlN制成。

54. 发明授权

US06709730B2 Method of making diamond product and diamond product 失效
标题翻译：制造钻石产品和钻石产品的方法
公开(公告)号：US06709730B2
公开(公告)日：2004-03-23
申请号：US09995854
申请日：2001-11-29
申请人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
发明人： Yoshiki Nishibayashi , Kiichi Meguro , Takahiro Imai , Yutaka Ando
IPC分类号： B32B900
CPC分类号： H01J9/025 , C30B29/04 , C30B33/00 , H01J1/3044 , Y10T428/24355 , Y10T428/24628 , Y10T428/30
摘要： The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要翻译：制造根据本发明的金刚石产品的方法包括以下步骤：用掩模层（52）形成金刚石基底（50），并用形成有掩模层（52）的金刚石基底（50）蚀刻由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体，而氟原子浓度相对于混合气体中的原子总数为0.04〜6％的范围。

55. 发明授权

US06472397B1 Nitrogen-containing heterocyclic compounds having antiplatelet aggregation effect and medicinal use thereof 失效
标题翻译：含有抗血小板聚集作用的含氮杂环化合物及其医药用途
公开(公告)号：US06472397B1
公开(公告)日：2002-10-29
申请号：US09647849
申请日：2000-11-03
申请人： Kazumi Ota , Kazuko Kobayashi , Tomoaki Miura , Takahiro Imai , Kazumasa Aizawa , Hisashi Suzuki , Shokichi Ohuchi , Kiyoaki Katano , Takashi Ando
发明人： Kazumi Ota , Kazuko Kobayashi , Tomoaki Miura , Takahiro Imai , Kazumasa Aizawa , Hisashi Suzuki , Shokichi Ohuchi , Kiyoaki Katano , Takashi Ando
IPC分类号： A61K3144
CPC分类号： C07D401/04 , C07D405/14
摘要： The compounds represented by the formula (I), and pharmacologically acceptable salts and solvates thereof are disclosed. The compound is hydrolyzed in organisms into a compound represented by the formula in which W represents a hydrogen atom, and D represents the group —V—(CH2)p—COOR, wherein R represents a hydrogen atom. The compound inhibits the aggregation of platelets via the inhibition of the linkage of the platelet membrane protein GPIIb/IIIa to fibrinogen. wherein A represents CH2 or CO, B represents the group —(CH2)k— or —(CH2)m—CO—, X and Y are different from each other and represent N or CH, W represents an ester moiety which can be removed under the physiological condition, and Z represents the groups (II) or (III): wherein D represents the group —V—(CH2)p—COOR.
摘要翻译：公开了式（I）表示的化合物及其药理学上可接受的盐和溶剂合物。该化合物在生物体中水解成由下式表示的化合物，其中W表示氢原子，D表示-V-（CH 2）p -COOR基团，其中R表示氢原子。该化合物通过抑制血小板膜蛋白GPIIb / IIIa与纤维蛋白原的连接来抑制血小板聚集。其中A代表CH 2或CO，B代表基团 - （CH 2）k - 或 - （CH 2）m -CO- X和Y彼此不同，表示N或CH，W表示可在生理条件下除去的酯部分，Z表示基团（II）或（III）：其中D表示基团-V- （CH 2）p -COOR。

56. 发明授权

US6129145A Heat dissipator including coolant passage and method of fabricating the same 失效
标题翻译：包括冷却剂通道的散热器及其制造方法
公开(公告)号：US6129145A
公开(公告)日：2000-10-10
申请号：US100603
申请日：1998-06-19
申请人： Yoshiyuki Yamamoto , Takahiro Imai
发明人： Yoshiyuki Yamamoto , Takahiro Imai
IPC分类号： H01L23/373 , H01L23/473 , H01S5/00 , F28F3/12 , H05K7/20
CPC分类号： H01L23/473 , F28F3/12 , H01L23/3732 , H01L2924/0002
摘要： A heat dissipator includes a heat-conductive substrate, a lid and a heat-conductive cover layer, and a coolant groove for passing a coolant therethrough is formed on a major surface of the substrate. The lid is positioned on the coolant groove to seal the same, and the cover layer covers the major surface of substrate and the lid. The lid may be received in a lid groove to be flush with the major surface of the substrate. The substrate, lid and cover layer are all made of diamond, and are joined together with substantially no other material therebetween. Thus, a high heat conductivity is achieved. The heat dissipator can be a heat dissipating substrate for an electronic component, or an optical transmission window.
摘要翻译：散热器包括导热基板，盖和导热盖层，以及用于使冷却剂通过的冷却剂槽形成在基板的主表面上。盖子定位在冷却剂槽上以密封它，并且覆盖层覆盖基板和盖的主表面。盖可以容纳在盖槽中以与基底的主表面齐平。衬底，盖子和覆盖层都由金刚石制成，并且基本上没有其他材料连接在一起。因此，实现了高导热性。散热器可以是用于电子部件或光传输窗的散热基板。

57. 发明授权

US5993919A Method of synthesizing diamond 失效
标题翻译：金刚石合成方法
公开(公告)号：US5993919A
公开(公告)日：1999-11-30
申请号：US984609
申请日：1997-12-03
申请人： Takashi Tsuno , Takahiro Imai , Kentaro Yoshida , Yoshiaki Kumazawa
发明人： Takashi Tsuno , Takahiro Imai , Kentaro Yoshida , Yoshiaki Kumazawa
IPC分类号： C30B29/04 , C23C16/02 , C23C16/26 , C23C16/27 , C23C16/50 , C30B25/10 , H01J37/32 , B05D3/06
CPC分类号： C30B25/105 , C23C16/02 , C23C16/27 , C23C16/271 , H01J37/3233 , H01J2237/339 , Y10S427/106
摘要： In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.
摘要翻译：在含有碳成分的等离子体在基板上合成金刚石的方法中，将包含钨作为热电子发射材料的长丝布置在室中的基板的上方。电极设置在与灯丝分离并特别在灯丝上方的位置。长丝至少暂时通电，其电位相对高于衬底的电位，同时电极至少暂时提供比丝的电位更高的电位。因此，在细丝和衬底之间产生等离子体，同时电子从细丝移动到电极，用于在细丝和电极之间产生等离子体，从而在衬底上形成金刚石核。此后，电子发射丝和电极的各自的电位彼此相等，用于从金刚石的核生长金刚石膜。

58. 发明授权

US10714676B2 Sensor and sensor system 有权
公开(公告)号：US10714676B2
公开(公告)日：2020-07-14
申请号：US15813321
申请日：2017-11-15
申请人： Mizuki Otagiri , Tsuneaki Kondoh , Yuko Arizumi , Tomoaki Sugawara , Junichiro Natori , Mayuka Araumi , Hideyuki Miyazawa , Makito Nakashima , Kimio Aoki , Takahiro Imai , Megumi Kitamura , Yuki Hoshikawa
发明人： Mizuki Otagiri , Tsuneaki Kondoh , Yuko Arizumi , Tomoaki Sugawara , Junichiro Natori , Mayuka Araumi , Hideyuki Miyazawa , Makito Nakashima , Kimio Aoki , Takahiro Imai , Megumi Kitamura , Yuki Hoshikawa
IPC分类号： H01L41/113 , G01L5/22 , G01L1/18 , G01L1/22 , H02N1/04 , H01L41/047 , G01L1/20
摘要： A sensor includes a plurality of elements and an insulating layer. The plurality of elements is deformable to generate power. The insulating layer is interposed between the plurality of elements. Each of the plurality of elements includes a pair of electrodes and an intermediate layer. The intermediate layer is disposed between the pair of electrodes and formed of one of a rubber and a rubber composition.

59. 发明授权

US10458816B2 Sensor including an electrode, insulator, pressure receiver, and pressure imparting unit, and a system including the sensor 有权
公开(公告)号：US10458816B2
公开(公告)日：2019-10-29
申请号：US15827049
申请日：2017-11-30
申请人： Hideyuki Miyazawa , Tsuneaki Kondoh , Tomoaki Sugawara , Yuko Arizumi , Junichiro Natori , Mayuka Araumi , Takahiro Imai , Makito Nakashima , Kimio Aoki , Mizuki Otagiri , Megumi Kitamura , Yuki Hoshikawa
发明人： Hideyuki Miyazawa , Tsuneaki Kondoh , Tomoaki Sugawara , Yuko Arizumi , Junichiro Natori , Mayuka Araumi , Takahiro Imai , Makito Nakashima , Kimio Aoki , Mizuki Otagiri , Megumi Kitamura , Yuki Hoshikawa
IPC分类号： G01D5/241 , H03K17/975 , H03K17/96
摘要： A sensor includes an electrode, an insulator, a pressure receiver, and a pressure imparting unit. The insulator is disposed at a position facing the electrode and away from the electrode. The pressure receiver is disposed on a surface of the insulator on a side opposite to the electrode. The pressure imparting unit presses a part of the insulator toward the electrode at a position different from the pressure receiver to contact the insulator with the electrode. The insulator generates power by contact charging or separation charging with respect to the electrode, to output the power as a signal.

60. 发明授权

US10442091B2 Pressure-sensitive sensor, gripping device, and robot 有权
公开(公告)号：US10442091B2
公开(公告)日：2019-10-15
申请号：US16072056
申请日：2016-12-14
申请人： Tsuneaki Kondoh , Tomoaki Sugawara , Yuko Arizumi , Mayuka Araumi , Mizuki Otagiri , Junichiro Natori , Megumi Kitamura , Takahiro Imai , Hideyuki Miyazawa , Makito Nakashima
发明人： Tsuneaki Kondoh , Tomoaki Sugawara , Yuko Arizumi , Mayuka Araumi , Mizuki Otagiri , Junichiro Natori , Megumi Kitamura , Takahiro Imai , Hideyuki Miyazawa , Makito Nakashima
IPC分类号： G01L1/16 , B25J15/08 , G01L5/22 , G01L1/00 , B25J13/08 , B25J19/02 , G01L5/00
摘要： A gripping device 18 is provided at the front end of an arm of an assembly robot 2. The gripping device 18 includes a pair of grippers 20 and 22 capable of opening and closing. The side configured to come into contact with a part 4, of each gripper 20, 22 includes a pressure-sensitive sensor 24. The pressure-sensitive sensor 24 includes a first electrode and a second electrode serving as a pair of electrodes and an intermediate layer formed of rubber or a rubber composition between the pair of electrodes. The intermediate layer is configured to generate electricity when deformed by contact with an object (part 4). The side configured to come into contact with the object, of the intermediate layer is subjected to a surface modification treatment and has a higher hardness than the opposite side.

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