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    • 55. 发明申请
    • Form evaluation system and method
    • 表格评估制度和方法
    • US20050239026A1
    • 2005-10-27
    • US10889098
    • 2004-07-13
    • Junichi SuzukiYutaka Sato
    • Junichi SuzukiYutaka Sato
    • A63B69/36A63B69/00
    • A63B24/0003A63B69/36A63B2024/0012A63B2220/806A63B2225/20
    • It is sought to provide a form evaluation system, which permits clear visual comparison of an ideal form and the own form on an image and accurately understanding points to be improved. A database is formed with check points of the form in golf, for instance, as reference data of form evaluation. A predetermined division number of still images are produced from motion picture image data of subscriber, these still images are displayed on a personal computer display screen, the form of the subscriber's still images is evaluated with the database as reference, and on the basis of the evaluation a form evaluation sheet is produced, which contains a predetermined division number of serially changing still images and form guide comments each provided for each of these still images.
    • 旨在提供一种形式评估系统,其允许对图像上的理想形式和自己的形式进行清晰的视觉比较,并准确地理解要改进的点。 以高尔夫形式的检查点形成数据库,例如作为表格评估的参考数据。 根据用户的动态图像图像数据生成预定的静止图像分割数,将这些静止图像显示在个人计算机显示画面上,以数据库为参考,以用户静止图像的形式为基础, 产生评估表格评估表,该表格评估表包含每个为这些静止图像提供的每个静态图像的预定分割数和形式指导注释。
    • 56. 发明申请
    • Method and apparatus for testing defective portion of semiconductor device
    • 用于测试半导体器件的缺陷部分的方法和装置
    • US20050218922A1
    • 2005-10-06
    • US11088833
    • 2005-03-25
    • Junichi SuzukiKohji Kanamori
    • Junichi SuzukiKohji Kanamori
    • G01R31/28G01R31/26G11C16/06G11C29/00G11C29/06H01L21/66H01L21/8247H01L27/115H01L29/788H01L29/792
    • G01R31/2621
    • An apparatus for testing a defect, includes a semiconductor element. In the semiconductor element, a conductive film is formed on an STI (shallow trench isolation) insulating film, which fills a shallow trench extending into a semiconductor region, through an insulating film in an ordinary state, and the shallow trench is not completely or sufficiently filled with the STI insulating film in a defective state. Also, the apparatus includes a control circuit configured to set a test mode in response to a test mode designation signal, a first voltage applying circuit configured to output a first voltage to the conductive film in the test mode, and a second voltage applying circuit configured to output a second voltage to the semiconductor region in the test mode. The first voltage is higher than the second voltage, and a voltage difference between the first voltage and the second voltage is sufficient to cause breakdown between the conductive film and the semiconductor region in the defective state.
    • 用于测试缺陷的装置包括半导体元件。 在半导体元件中,在通常通过绝缘膜的STI(浅沟槽隔离)绝缘膜上形成导电膜,其通过绝缘膜填充延伸到半导体区域中的浅沟槽,并且浅沟槽不完全或充分 填充有缺陷状态的STI绝缘膜。 此外,该装置包括:控制电路,被配置为响应于测试模式指定信号设置测试模式;第一电压施加电路,被配置为在测试模式下向导电膜输出第一电压;以及第二电压施加电路, 以在测试模式中向半导体区域输出第二电压。 第一电压高于第二电压,并且第一电压和第二电压之间的电压差足以导致在缺陷状态下导电膜和半导体区域之间的击穿。