专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明申请

US20120155155A1 GENERATING A TEMPERATURE-COMPENSATED WRITE CURRENT FOR A MAGNETIC MEMORY CELL 有权
标题翻译：为磁记忆体产生温度补偿写入电流
公开(公告)号：US20120155155A1
公开(公告)日：2012-06-21
申请号：US12971244
申请日：2010-12-17
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： G11C11/00
CPC分类号： G11C7/04 , G11C11/161 , G11C11/1675 , G11C11/1697
摘要： This disclosure describes write current temperature compensation techniques for use in programming a data storage device that includes one or more memory cells. The techniques may include programming a programmable magnetization state of a magnetoresistive device included within a resistance network based on a signal indicative of the operating temperature of a magnetic memory cell. The techniques may further include generating a write current having a magnitude that is determined at least in part by the programmable magnetization state of the magnetoresistive device. The techniques may further include supplying the write current to the magnetic memory cell for programming a programmable magnetization state of the magnetic memory cell.
摘要翻译：本公开描述了用于编程包括一个或多个存储器单元的数据存储设备的写入当前温度补偿技术。这些技术可以包括基于指示磁存储器单元的工作温度的信号来编程包括在电阻网络内的磁阻器件的可编程磁化状态。这些技术可以进一步包括产生具有至少部分由磁阻器件的可编程磁化状态确定的幅度的写入电流。这些技术可以进一步包括向磁性存储单元提供写入电流以编程磁性存储单元的可编程磁化状态。

52. 发明申请

US20120106233A1 REDUCED SWITCHING-ENERGY MAGNETIC ELEMENTS 有权
标题翻译：减少切换能量的磁性元素
公开(公告)号：US20120106233A1
公开(公告)日：2012-05-03
申请号：US12916238
申请日：2010-10-29
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： G11C11/22 , H01L43/12 , H01L29/82
CPC分类号： H01L27/222 , G11C11/161 , H03K19/18
摘要： A system includes a continuous thin-film ferromagnetic layer, N magnetic tunnel junction (MTJ) devices, and N write structures. The continuous thin-film ferromagnetic layer includes N modified regions. Each of the N modified regions is configured to stabilize a magnetic domain wall located in the continuous thin-film ferromagnetic layer. Each of the N MTJ devices includes one of N portions of the continuous thin-film ferromagnetic layer. Adjacent MTJ devices of the N MTJ devices are separated by one of the N modified regions. Each of the N write structures is configured to receive current and generate a magnetic field that magnetizes a different one of the N portions of the continuous thin-film ferromagnetic layer. N is an integer greater than 2.
摘要翻译：一种系统包括连续的薄膜铁磁层，N磁性隧道结（MTJ）器件和N个写入结构。连续薄膜铁磁层包括N个改性区域。 N个修饰区域中的每一个被配置为稳定位于连续薄膜铁磁层中的磁畴壁。 N MTJ器件中的每一个包括连续薄膜铁磁层的N个部分中的一个。 N个MTJ设备的相邻MTJ设备由N个修改区域之一分隔开。 N个写入结构中的每一个被配置为接收电流并且产生使连续薄膜铁磁层的N个部分中的不同一个磁化的磁场。 N是大于2的整数。

53. 发明申请

US20120105101A1 MAGNETIC LOGIC GATE 有权
标题翻译：磁性逻辑门
公开(公告)号：US20120105101A1
公开(公告)日：2012-05-03
申请号：US12916046
申请日：2010-10-29
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： H03K19/20
CPC分类号： H03K19/16 , G11C11/161
摘要： This disclosure is directed to a magnetic logic gate for implementing a combinational logic function. The magnetic logic gate may include a write circuit configured to apply a spin-polarized current to the magnetoresistive device such that a resulting programmed magnetization state of the magnetoresistive device corresponds to a logic input value of a combinational logic function implemented by the magnetic logic device. The magnetic logic gate may further include a read circuit configured to generate a logic output value for the combinational logic function based on the programmed magnetization state in response to the write circuit applying the spin-polarized current to the magnetoresistive device.
摘要翻译：本公开涉及用于实现组合逻辑功能的磁逻辑门。磁逻辑门可以包括写电路，其被配置为将自旋极化电流施加到磁阻器件，使得磁阻器件的结果编程磁化状态对应于由磁逻辑器件实现的组合逻辑功能的逻辑输入值。磁逻辑门还可以包括读电路，其被配置为响应于施加自旋极化电流到磁阻器件的写电路，基于编程的磁化状态来生成用于组合逻辑功能的逻辑输出值。

54. 发明授权

US07795708B2 Multilayer structures for magnetic shielding 有权
标题翻译：用于磁屏蔽的多层结构
公开(公告)号：US07795708B2
公开(公告)日：2010-09-14
申请号：US11445874
申请日：2006-06-02
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： H01L23/552
CPC分类号： H05K9/0075 , H01L23/552 , H01L24/49 , H01L2224/49109 , H01L2924/00014 , H01L2924/0102 , H01L2924/15156 , H01L2924/16195 , H05K9/0088 , H01L2224/45099
摘要： A magnetic shield is presented. The shield may be used to protect a microelectronic device from stray magnetic fields. The shield includes at least two layers. A first layer includes a magnetic material that may be used to block DC magnetic fields. A second layer includes a conductive material that may be used to block AC magnetic fields. Depending on the type of material that the first and second layers include, a third layer may be inserted in between the first and second layers. The third layer may include a non-conductive material that may be used to ensure that separate eddy current regions form in the first and second layers.
摘要翻译：提供磁屏蔽。屏蔽可用于保护微电子器件免受杂散磁场的影响。屏蔽层至少包括两层。第一层包括可用于阻挡直流磁场的磁性材料。第二层包括可用于阻挡交流磁场的导电材料。根据第一和第二层包括的材料的类型，第三层可以插入在第一层和第二层之间。第三层可以包括非导电材料，其可用于确保在第一层和第二层中形成单独的涡流区。

55. 发明授权

US07499313B2 Nonvolatile memory with data clearing functionality 有权
标题翻译：具有数据清除功能的非易失性存储器
公开(公告)号：US07499313B2
公开(公告)日：2009-03-03
申请号：US11446547
申请日：2006-06-02
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： G11C11/00
CPC分类号： G11C7/20 , G11C7/02 , G11C7/04 , G11C11/16 , G11C11/1675 , G11C11/1695 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A nonvolatile memory and a method of operating the memory are described. The memory includes memory cells that may each include a magnetoresistive memory bit. The memory includes toggle circuitry for altering the resistive states of memory cells within the memory without changing the logical states of the memory cells. The memory may be toggled to balance resistive decay associated with operating a memory bit under certain conditions or in extreme environments.
摘要翻译：描述非易失性存储器和操作存储器的方法。存储器包括可以包括磁阻存储器位的存储器单元。存储器包括用于改变存储器中的存储器单元的电阻状态而不改变存储器单元的逻辑状态的触发电路。存储器可以被切换以平衡在某些条件下或在极端环境中与存储器位操作相关联的电阻衰减。

56. 发明授权

US07383626B2 Methods for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US07383626B2
公开(公告)日：2008-06-10
申请号：US11508671
申请日：2006-08-22
申请人： Daniel L. Baseman , Lonny L. Berg , Romney R. Katti , Daniel S. Reed , Gordon A. Shaw , Wei D. Z. Zou
发明人： Daniel L. Baseman , Lonny L. Berg , Romney R. Katti , Daniel S. Reed , Gordon A. Shaw , Wei D. Z. Zou
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

57. 发明申请

US20070279970A1 Nonvolatile memory with data clearing functionality 有权
标题翻译：具有数据清除功能的非易失性存储器
公开(公告)号：US20070279970A1
公开(公告)日：2007-12-06
申请号：US11446547
申请日：2006-06-02
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： G11C11/00
CPC分类号： G11C7/20 , G11C7/02 , G11C7/04 , G11C11/16 , G11C11/1675 , G11C11/1695 , G11C13/0033 , G11C13/0069 , G11C16/3431
摘要： A nonvolatile memory and a method of operating the memory are described. The memory includes memory cells that may each include a magnetoresistive memory bit. The memory includes toggle circuitry for altering the resistive states of memory cells within the memory without changing the logical states of the memory cells. The memory may be toggled to balance resistive decay associated with operating a memory bit under certain conditions or in extreme environments.
摘要翻译：描述非易失性存储器和操作存储器的方法。存储器包括可以包括磁阻存储器位的存储器单元。存储器包括用于改变存储器中的存储器单元的电阻状态而不改变存储器单元的逻辑状态的触发电路。存储器可以被切换以平衡在某些条件下或在极端环境中与存储器位操作相关联的电阻衰减。

58. 发明授权

US07193892B2 Magnetic switching with expanded hard-axis magnetization volume at magnetoresistive bit ends 失效
标题翻译：在磁阻位端具有扩大的硬轴磁化体积的磁切换
公开(公告)号：US07193892B2
公开(公告)日：2007-03-20
申请号：US10914327
申请日：2004-08-09
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/15
摘要： A magnetoresistive apparatus and method of operation with improved switching characteristics is provided. Switching of a magnetic direction of a magnetic layer of a magnetoresistive bit is promoted by parallel rotation of local magnetic direction of ends of the bit toward alignment with a hard-axis of the bit. Thus, an embodiment provides for expanded hard-axis magnetic volume of the bit ends to support hard-axis magnetization through bit shape alteration or doping, for example. A method provides for applying a hard-axis magnetic field to the bit ends for initiating switching and applying an easy-axis magnetic field for completing switching.
摘要翻译：提供了具有改进的开关特性的磁阻装置和操作方法。通过使位的端部的局部磁方向与钻头的硬轴对齐来促进磁阻位的磁层的磁方向的切换。因此，实施例提供了位端的扩展的硬轴磁体积，以例如通过钻头形状改变或掺杂来支持硬轴磁化。一种方法提供将硬轴磁场施加到位端以启动切换并施加易轴磁场以完成切换。

59. 发明授权

US07114240B2 Method for fabricating giant magnetoresistive (GMR) devices 失效
标题翻译：制造巨磁阻（GMR）器件的方法
公开(公告)号：US07114240B2
公开(公告)日：2006-10-03
申请号：US10706531
申请日：2003-11-12
申请人： Daniel L. Baseman , Lonny L. Berg , Romney R. Katti , Daniel S. Reed , Gordon A. Shaw , Wei D. Z. Zou
发明人： Daniel L. Baseman , Lonny L. Berg , Romney R. Katti , Daniel S. Reed , Gordon A. Shaw , Wei D. Z. Zou
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11C11/16 , G11B5/39 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49155
摘要： In a method of fabricating a giant magnetoresistive (GMR) device a plurality of magnetoresistive device layers is deposited on a first silicon nitride layer formed on a silicon oxide layer. An etch stop is formed on the magnetoresistive device layers, and a second layer of silicon nitride is formed on the etch stop. The magnetoresistive device layers are patterned to define a plurality of magnetic bits having sidewalls. The second silicon nitride layer is patterned to define electrical contact portions on the etch stop in each magnetic bit. The sidewalls of the magnetic bits are covered with a photoresist layer. A reactive ion etch (RIE) process is used to etch into the first silicon nitride and silicon oxide layers to expose electrical contacts. The photoresist layer and silicon nitride layers protect the magnetoresistive layers from exposure to oxygen during the etching into the silicon oxide layer.
摘要翻译：在制造巨磁阻（GMR）器件的方法中，多个磁阻器件层沉积在形成于氧化硅层上的第一氮化硅层上。在磁阻器件层上形成蚀刻停止层，在蚀刻停止层上形成第二氮化硅层。图案化磁阻器件层以限定具有侧壁的多个磁性位。将第二氮化硅层图案化以限定每个磁头中蚀刻停止点上的电接触部分。磁头的侧壁被光致抗蚀剂层覆盖。使用反应离子蚀刻（RIE）工艺来蚀刻到第一氮化硅和氧化硅层中以暴露电触点。在蚀刻到氧化硅层期间，光致抗蚀剂层和氮化硅层保护磁阻层免受暴露于氧气。

60. 发明授权

US07053429B2 Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications 失效
公开(公告)号：US07053429B2
公开(公告)日：2006-05-30
申请号：US10702974
申请日：2003-11-06
申请人： Romney R. Katti
发明人： Romney R. Katti
IPC分类号： H01L31/119
CPC分类号： B82Y25/00 , G11B5/39 , G11C11/16 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A bias-adjusted giant magnetoresistive (GMR) device includes a ferromagnetic reference layer, which has a magnetization that remains relatively fixed when a range of magnetic fields is applied, and a ferromagnetic switching layer, which has a magnetization that can be changed by applying a relatively small magnetic field. In MRAM applications, the switching layer stores data in the form of the particular orientation of its magnetization relative to the magnetization of the reference layer. At least one of the reference and switching layers is split into at least two ferromagnetic layers separated by one or more layers of a nonmagnetic conductor, such that the hysteresis curve of resistance versus applied magnetic field is substantially symmetric about zero applied magnetic field.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式