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51. 发明申请

US20070182029A1 SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS 审中-公开
标题翻译：用于生产半导体元件的半导体元件和方法
公开(公告)号：US20070182029A1
公开(公告)日：2007-08-09
申请号：US11672760
申请日：2007-02-08
申请人： Martin Franosch , Andreas Meckes , Edward Fuergut
发明人： Martin Franosch , Andreas Meckes , Edward Fuergut
IPC分类号： H01L23/29
CPC分类号： B81C1/00269 , B81C1/00333 , B81C2203/0136 , H01L21/50 , H01L21/561 , H01L21/563 , H01L23/3128 , H01L23/552 , H01L24/28 , H01L24/81 , H01L24/97 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2224/81801 , H01L2224/83102 , H01L2224/92125 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/014 , H01L2924/1461 , H01L2924/15311 , H01L2924/16235 , H01L2924/181 , H01L2924/19043 , H01L2924/3025 , H03H9/0523 , H03H9/1007 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2924/00012
摘要： A semiconductor is disclosed. In one embodiment, the semiconductor includes a semiconductor substrate having an active area region, a covering configured to protect the active area region, and a carrier. An interspace is located between the carrier and the covering. The interspace is filled with an underfiller material is disclosed.
摘要翻译：公开了半导体。在一个实施例中，半导体包括具有有源区域区域的半导体衬底，被配置为保护有源区域区域的覆盖物和载体。一个间隙位于载体和覆盖物之间。公开了填充有底填料的间隙。

52. 发明申请

US20060183325A1 Lift-off method 审中-公开
标题翻译：脱离法
公开(公告)号：US20060183325A1
公开(公告)日：2006-08-17
申请号：US11331434
申请日：2006-01-12
申请人： Martin Franosch , Klaus-Guenter Oppermann
发明人： Martin Franosch , Klaus-Guenter Oppermann
IPC分类号： H01L21/44
CPC分类号： H01L21/0272 , G03F7/38 , G03F7/40
摘要： A lift-off method includes providing a material structure, applying photoresist on a surface of the material structure, partially exposing the photoresist, baking the material structure with the partially exposed photoresist applied on the surface of the material structure, developing the photoresist with an organic, polar developer, so that the photoresist is removed in a first region of the surface, and the photoresist remains in the second region of the surface, applying coating material on the surface of the material structure and the remaining photoresist, and removing the photoresist.
摘要翻译：剥离方法包括提供材料结构，在材料结构的表面上施加光致抗蚀剂，部分地曝光光致抗蚀剂，用施加在材料结构表面上的部分曝光的光致抗蚀剂烘烤材料结构，用有机极性显影剂，使得在表面的第一区域中去除光致抗蚀剂，并且光致抗蚀剂保留在表面的第二区域中，将涂料涂覆在材料结构的表面上，并除去光致抗蚀剂。

53. 发明申请

US20050079686A1 Method for producing a cover, method for producing a packaged device 有权
标题翻译：盖的制造方法，包装装置的制造方法
公开(公告)号：US20050079686A1
公开(公告)日：2005-04-14
申请号：US10921087
申请日：2004-08-18
申请人： Robert Aigner , Martin Franosch , Andreas Meckes , Klaus-Guenter Oppermann , Marc Strasser
发明人： Robert Aigner , Martin Franosch , Andreas Meckes , Klaus-Guenter Oppermann , Marc Strasser
IPC分类号： H03H9/10 , H01L21/00 , H01L21/30 , H01L21/48
CPC分类号： H03H9/1071 , H03H9/105
摘要： In a method for producing a cover for a region of a substrate, first a frame structure is produced in the region of the substrate, and then a cap structure is attached to the frame structure so that the region under the cap structure is covered. Thus, sensitive devices may be protected easily and at low cost from external influences and particularly from a casting material for casting the entire packaged device, which results when a diced chip is cast.
摘要翻译：在用于制造基板区域的盖的方法中，首先在基板的区域中制造框架结构，然后将盖结构附接到框架结构，使得盖结构下方的区域被覆盖。因此，敏感装置可以容易地以低成本保护外部影响，特别是用于铸造整个封装装置的铸造材料，这在铸造切割的芯片时产生。

54. 发明授权

US06878600B2 Method for fabricating trench capacitors and semiconductor device with trench capacitors 失效
标题翻译：制造沟槽电容器的方法和具有沟槽电容器的半导体器件
公开(公告)号：US06878600B2
公开(公告)日：2005-04-12
申请号：US10436426
申请日：2003-05-12
申请人： Albert Birner , Matthias Goldbach , Martin Franosch
发明人： Albert Birner , Matthias Goldbach , Martin Franosch
IPC分类号： H01L21/3063 , H01L21/8242 , H01L27/108 , H01L21/20
CPC分类号： H01L27/1087
摘要： A method for fabricating trench capacitors having trenches with mesopores, the trench capacitors being suitable both for discrete capacitors and for integrated semiconductor memories, significantly increases the surface area for electrodes of the capacitors and, hence, the capacitance thereof. The mesopores, which are small woodworm-hole-like channels having diameters from approximately 2 to 50 nm, are fabricated electrochemically. It is, thus, possible to produce capacitances with a large capacitance-to-volume ratio. Growth of the mesopores stops, at the latest, when the mesopores reach a minimum distance from another mesopore or adjacent trench (self-passivation). As such, the formation of “short circuits” between two adjacent mesopores can be avoided in a self-regulated manner. Furthermore, a semiconductor device is provided including at least one trench capacitor on the front side of a semiconductor substrate fabricated by the method according to the invention.
摘要翻译：一种用于制造具有中孔的沟槽的沟槽电容器的方法，所述沟槽电容器适用于分立电容器和集成半导体存储器，显着增加了电容器的电极的表面积，并因此显着增加了其电容。电化学地制造直径为约2〜50nm的小木蛾孔状通道的中孔。因此，可以产生具有大的电容容积比的电容。当介孔达到与另一个中孔或相邻沟槽的最小距离（自钝化）时，介孔的生长最终停止。因此，可以以自我调节的方式避免在两个相邻介孔之间形成“短路”。此外，提供一种半导体器件，其包括通过根据本发明的方法制造的半导体衬底的前侧上的至少一个沟槽电容器。

55. 发明申请

US20050009316A1 Method for producing a protective cover for a device 有权
公开(公告)号：US20050009316A1
公开(公告)日：2005-01-13
申请号：US10820652
申请日：2004-04-08
申请人： Martin Franosch , Andreas Meckes , Klaus-Gunter Oppermann
发明人： Martin Franosch , Andreas Meckes , Klaus-Gunter Oppermann
IPC分类号： B81B7/00 , H03H3/007 , H03H9/02 , H01L21/44
CPC分类号： B81C1/00333 , B81C2203/0136 , H01L2224/11 , H03H3/007 , H03H9/02834 , H03H9/02984
摘要： In a method for producing a protective cover for a device which is formed in a substrate, a first cover layer is initially deposited on the substrate, the first cover layer covering an area of the substrate which includes the device. Subsequently, an opening is formed in the first cover layer, the opening exposing that area of the substrate which includes the device. Then the opening formed in the first cover layer is filled up using a filling material. Subsequently, a second cover layer is deposited on the first cover layer and in the opening of the first cover layer which is filled up with the filling material. Thereafter, an opening is formed in the second cover layer to expose an area of the filling material. Finally, the filling material covering that area of the substrate which includes the device is removed, and the opening formed in the second cover layer is closed.

56. 发明授权

US06605487B2 Method for the manufacture of micro-mechanical components 有权
公开(公告)号：US06605487B2
公开(公告)日：2003-08-12
申请号：US10027044
申请日：2001-12-20
申请人： Martin Franosch , Reinhard Wittmann , Catharina Pusch
发明人： Martin Franosch , Reinhard Wittmann , Catharina Pusch
IPC分类号： H01L2100
CPC分类号： B81C1/00476 , B81C1/00047 , B81C2201/016
摘要： A method for the manufacture of micro-mechanical components from a stack of layers having at least a substrate, a sacrificial layer and a layer which is to be undercut includes forming at least one etch hole in the layer, which is to be undercut, and providing at least one passivation layer for controlling a selective depositing of a cover material which closes each of the etch holes after a step of etching the sacrificial layer. The passivation layer makes it possible that the undercut layer elements do not become excessively thick or grow together with the substrate due to the deposition of the cover material.

57. 发明授权

US05998807A Integrated CMOS circuit arrangement and method for the manufacture thereof 失效
标题翻译：集成CMOS电路布置及其制造方法
公开(公告)号：US05998807A
公开(公告)日：1999-12-07
申请号：US925672
申请日：1997-09-09
申请人： Bernhard Lustig , Herbert Schaefer , Martin Franosch
发明人： Bernhard Lustig , Herbert Schaefer , Martin Franosch
IPC分类号： H01L21/8238 , H01L21/8256 , H01L27/092 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L27/092 , H01L21/8256 , H01L27/1203
摘要： Semiconductor islands respectively comprise at least a Si.sub.1-x Ge.sub.x layer and a distorted silicon layer that exhibits essentially the same lattice constant as the Si.sub.1-x Ge.sub.x layer are formed on an insulating layer that is located on a carrier plate. The semiconductor islands are preferably formed by selective epitaxy and comprise p-channel MOS transistors and/or n-channel MOS transistors.
摘要翻译：半导体岛分别至少包含Si1-xGex层和在位于载体板上的绝缘层上形成与Si1-xGex层基本相同的晶格常数的失真硅层。半导体岛优选通过选择性外延形成并且包括p沟道MOS晶体管和/或n沟道MOS晶体管。

58. 发明申请

US20110133188A1 Process for Simultaneous Deposition of Crystalline and Amorphous Layers with Doping 有权
标题翻译：同时沉积具有掺杂的结晶和无定形层的方法
公开(公告)号：US20110133188A1
公开(公告)日：2011-06-09
申请号：US13026326
申请日：2011-02-14
申请人： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
发明人： Herbert Schäfer , Martin Franosch , Thomas Meister , Josef Böck
IPC分类号： H01L29/06
CPC分类号： H01L21/02639 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02661
摘要： One embodiment of the present invention relates to method for the concurrent deposition of multiple different crystalline structures on a semiconductor body utilizing in-situ differential epitaxy. In one embodiment of the present invention a preparation surface is formed, resulting in two distinct crystalline regions, a monocrystalline silicon substrate region and an isolating layer region. A monocrystalline silicon layer and an amorphous silicon layer are concurrently formed directly onto the preparation surface in the monocrystalline silicon substrate region and the isolating layer region, respectively. Deposition comprises the formation of two or more sub-layers. The process parameters can be varied for each individual sub-layer to optimize deposition characteristics.
摘要翻译：本发明的一个实施例涉及利用原位差分外延在半导体主体上同时沉积多个不同结晶结构的方法。在本发明的一个实施方案中，形成制备表面，得到两个不同的结晶区域，单晶硅衬底区域和隔离层区域。单晶硅层和非晶硅层同时直接分布在单晶硅衬底区域和隔离层区域的制备表面上。沉积包括形成两个或更多个子层。可以为每个单独的子层改变工艺参数以优化沉积特性。

59. 发明授权

US07851333B2 Apparatus comprising a device and method for producing it 有权
标题翻译：一种装置，包括一种用于生产该装置的装置和方法
公开(公告)号：US07851333B2
公开(公告)日：2010-12-14
申请号：US11724603
申请日：2007-03-15
申请人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
发明人： Klaus-Guenter Oppermann , Martin Franosch , Martin Handtmann
IPC分类号： H01L21/00
CPC分类号： H03H9/02125 , H01L21/6835 , H01L23/3121 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/96 , H01L24/97 , H01L2221/68368 , H01L2224/0401 , H01L2224/11002 , H01L2224/16225 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01068 , H01L2924/01072 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/13091 , H01L2924/1421 , H01L2924/19043 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： An apparatus comprises a device layer structure, a device integrated into the device layer structure, an insulating carrier substrate and an insulating layer being continuously positioned between the device layer structure and the insulating carrier substrate, the insulating layer having a thickness which is less than 1/10 of a thickness of the insulating carrier substrate. An apparatus further comprises a device integrated into a device layer structure disposed on an insulating layer, a housing layer disposed on the device layer structure and housing the device, a contact providing an electrical connection between the device and a surface of the housing layer opposed to the device layer structure and a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposed to the device layer structure.
摘要翻译：一种装置包括器件层结构，集成到器件层结构中的器件，绝缘载体衬底和绝缘层，其连续地位于器件层结构和绝缘载体衬底之间，绝缘层的厚度小于1 绝缘载体基板的厚度的1/10。一种装置还包括集成在设置在绝缘层上的器件层结构中的器件，设置在器件层结构上并容纳该器件的壳体层，提供该器件与壳体层相对的表面之间的电连接的触点所述器件层结构和围绕所述壳体层和所述绝缘层的模制材料，所述模制材料直接邻接在所述绝缘层的与所述器件层结构相对的表面上。

60. 发明授权

US07682777B2 Method for producing a polymer structure on a substrate surface 有权
标题翻译：在基板表面上制造聚合物结构的方法
公开(公告)号：US07682777B2
公开(公告)日：2010-03-23
申请号：US11387055
申请日：2006-03-22
申请人： Martin Franosch , Andreas Meckes , Klaus-Guenter Oppermann
发明人： Martin Franosch , Andreas Meckes , Klaus-Guenter Oppermann
IPC分类号： G03F7/00
CPC分类号： B81B7/0048 , B81C2203/0136
摘要： A method for producing a polymer structure on a patterning region of a substrate surface includes the steps of depositing an adhesion layer having a first polymer material onto the substrate surface, patterning the adhesion layer such that the first polymer material of the adhesion layer is removed in a first region and the first polymer material of the adhesion layer remains in a second region including the patterning region, depositing a polymer layer of a second polymer material onto the substrate surface and the adhesion layer and patterning the polymer layer such that the polymer structure forms in the second region.
摘要翻译：在基板表面的图案化区域上制造聚合物结构的方法包括以下步骤：在基板表面上沉积具有第一聚合物材料的粘合层，图案化粘合层，使得粘合层的第一聚合物材料被去除第一区域和粘合层的第一聚合物材料保留在包括图案化区域的第二区域中，将第二聚合物材料的聚合物层沉积到基底表面和粘合层上并且使聚合物层形成图案，使得聚合物结构形成在第二个地区。

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