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51. 发明申请

US20120181640A1 Semiconductor Devices Having Insulating Substrates and Methods of Formation Thereof 有权
标题翻译：具有绝缘基板的半导体器件及其形成方法
公开(公告)号：US20120181640A1
公开(公告)日：2012-07-19
申请号：US13007892
申请日：2011-01-17
申请人： Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
发明人： Carsten von Koblinski , Volker Strutz , Manfred Engelhardt
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/14 , H01L21/78 , H01L21/84 , H01L23/3121 , H01L23/3171 , H01L23/3178 , H01L23/3185 , H01L24/06 , H01L27/12 , H01L27/22 , H01L43/04 , H01L43/065 , H01L43/12 , H01L2224/04042 , H01L2224/05553 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/01322 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15788 , H01L2924/181 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： In one embodiment, a semiconductor device includes a glass substrate, a semiconductor substrate disposed on the glass substrate, and a magnetic sensor disposed within and/or over the semiconductor substrate.
摘要翻译：在一个实施例中，半导体器件包括玻璃衬底，设置在玻璃衬底上的半导体衬底和设置在半导体衬底内和/或之上的磁传感器。

52. 发明申请

US20110063212A1 Apparatus for Input of Control Signals for Moving an Object 审中-公开
标题翻译：用于输入用于移动物体的控制信号的装置
公开(公告)号：US20110063212A1
公开(公告)日：2011-03-17
申请号：US12988126
申请日：2009-04-16
申请人： Michael Ries , Manfred Engelhardt
发明人： Michael Ries , Manfred Engelhardt
IPC分类号： G06F3/033
CPC分类号： G06F3/0362 , G06F3/0338 , G06F3/03549
摘要： In one embodiment an apparatus for input of control signals is for moving an object in three spatial directions and three rotational directions and for connection to a computational unit with a display which displays at least partial areas of the object. The apparatus comprises a carrier element, an input element which is moveable with respect to the carrier element for input of the control signals, and an actuator, which is arranged at the carrier element. The actuator is designed as a rotatable or slideable element in order to detect further inputs of a user and extends at least partially around the input element.
摘要翻译：在一个实施例中，用于输入控制信号的装置用于在三个空间方向和三个旋转方向上移动物体，并且用于连接到具有显示对象的至少部分区域的显示器的计算单元。该装置包括载体元件，可相对于载体元件移动以输入控制信号的输入元件，以及布置在载体元件上的致动器。致动器被设计为可旋转或可滑动的元件，以便检测用户的进一步输入并至少部分地围绕输入元件延伸。

53. 发明申请

US20070111431A1 MIM capacitor and associated production method 有权
标题翻译： MIM电容器及相关生产方法
公开(公告)号：US20070111431A1
公开(公告)日：2007-05-17
申请号：US11540502
申请日：2006-09-29
申请人： Manfred Engelhardt , Andreas Stich , Guenther Schindler , Michael Schrenk
发明人： Manfred Engelhardt , Andreas Stich , Guenther Schindler , Michael Schrenk
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： H01G4/33 , H01G4/228 , H01G4/40 , H01L28/75
摘要： An MIM capacitor includes a first capacitor electrode, which is formed in the surface of a first intermediate dielectric, a second intermediate dielectric, which is formed on the first intermediate dielectric and has an opening that exposes the first capacitor electrode, and a first electrically conducting diffusion barrier layer, which is formed on the surface of the exposed first capacitor electrode. On the diffusion barrier layer and on the side walls of the opening there is also formed a capacitor dielectric and a second capacitor electrode on top.
摘要翻译： MIM电容器包括形成在第一中间电介质的表面中的第一电容器电极，形成在第一中间电介质上并具有暴露第一电容器电极的开口的第二中间电介质，以及第一导电扩散阻挡层，其形成在暴露的第一电容器电极的表面上。在扩散阻挡层和开口的侧壁上，还在顶部形成电容电介质和第二电容器电极。

54. 发明授权

US06998338B2 Method of producing an integrated circuit configuration 失效
标题翻译：集成电路结构的制造方法
公开(公告)号：US06998338B2
公开(公告)日：2006-02-14
申请号：US10646218
申请日：2003-08-22
申请人： Manfred Engelhardt
发明人： Manfred Engelhardt
IPC分类号： H01L21/4763
CPC分类号： H01L21/76844 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： In an integrated circuit configuration, above a first conductive structure which is embedded in a first insulating layer there are arranged a first barrier layer and a second insulating layer, in which a contact hole is provided which reaches down to the first conductive structure. Above the first barrier layer, the side walls of the contact hole are provided with spacers which act as a diffusion barrier and which reach down to the surface of the first barrier layer. A second conductive structure is arranged in the contact hole. The second conductive structure is conductively connected to the first conductive structure. During the production of the contact hole, the spacers prevent deposition of material from the first conductive structure on the surface of the second insulating layer.
摘要翻译：在集成电路结构中，在嵌入在第一绝缘层中的第一导电结构之上，布置有第一阻挡层和第二绝缘层，其中设置有向下到达第一导电结构的接触孔。在第一阻挡层上方，接触孔的侧壁设置有用作扩散阻挡层并且到达第一阻挡层表面的间隔物。第二导电结构布置在接触孔中。第二导电结构与第一导电结构导电连接。在接触孔的制造期间，间隔物防止第二绝缘层表面上的第一导电结构材料的沉积。

55. 发明授权

US06828680B2 Integrated circuit configuration using spacers as a diffusion barrier and method of producing such an integrated circuit configuration 失效
标题翻译：使用间隔物作为扩散阻挡层的集成电路配置和制造这种集成电路配置的方法
公开(公告)号：US06828680B2
公开(公告)日：2004-12-07
申请号：US09816923
申请日：2001-03-23
申请人： Manfred Engelhardt
发明人： Manfred Engelhardt
IPC分类号： H01L23532
CPC分类号： H01L21/76844 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： In an integrated circuit configuration, above a first conductive structure which is embedded in a first insulating layer there are arranged a first barrier layer and a second insulating layer, in which a contact hole is provided which reaches down to the first conductive structure. Above the first barrier layer, the side walls of the contact hole are provided with spacers which act as a diffusion barrier and which reach down to the surface of the first barrier layer. A second conductive structure is arranged in the contact hole. The second conductive structure is conductively connected to the first conductive structure. During the production of the contact hole, the spacers prevent deposition of material from the first conductive structure on the surface of the second insulating layer.
摘要翻译：在集成电路结构中，在嵌入在第一绝缘层中的第一导电结构之上，布置有第一阻挡层和第二绝缘层，其中设置有向下到达第一导电结构的接触孔。在第一阻挡层上方，接触孔的侧壁设置有用作扩散阻挡层并且到达第一阻挡层表面的间隔物。第二导电结构布置在接触孔中。第二导电结构与第一导电结构导电连接。在接触孔的制造期间，间隔物防止第二绝缘层表面上的第一导电结构材料的沉积。

56. 发明授权

US06454956B1 Structuring method 有权
标题翻译：结构方法
公开(公告)号：US06454956B1
公开(公告)日：2002-09-24
申请号：US09128389
申请日：1998-08-03
申请人： Manfred Engelhardt , Volker Weinrich
发明人： Manfred Engelhardt , Volker Weinrich
IPC分类号： B08B104
CPC分类号： H01L21/02052 , H01L21/0274 , H01L21/31053 , H01L21/31122 , H01L21/31144 , H01L21/32139 , H01L28/55 , H01L28/60 , Y10S438/959 , Y10S438/963
摘要： A method for structuring at least one layer to be structured. First, a mask is applied to the layer and the layer is structured using the mask. After the structuring step, the mask is then removed, while leaving behind redepositions of the material of the layer. The redepositions of the material of the layer are removed by mechanical polishing or chemical-mechanical polishing.
摘要翻译：一种用于构造至少一层待构造层的方法。首先，将掩模应用于层，并且使用掩模来构造层。在结构化步骤之后，然后去除掩模，同时留下层的材料的再沉积。通过机械抛光或化学机械抛光去除层的材料的再沉积。

57. 发明授权

US6030900A Process for generating a space in a structure 失效
标题翻译：在结构中生成空间的过程
公开(公告)号：US6030900A
公开(公告)日：2000-02-29
申请号：US11375
申请日：1998-02-04
申请人： Thomas Grassl , Manfred Engelhardt
发明人： Thomas Grassl , Manfred Engelhardt
IPC分类号： H01L21/76 , C23C16/02 , C23C16/40 , H01L21/316 , H01L21/762 , H01L21/44
CPC分类号： H01L21/02164 , C23C16/0245 , C23C16/402 , H01L21/02271 , H01L21/31608 , H01L21/76224
摘要： In a method for the production of a spacer layer in a structure in a first step a structure is produced by anisotropic dry etching, and in a further step an oxide layer is deposited with an organic silicon precursor at a pressure of p=0.2-1 bar and a temperature of 200.degree. C. to 400.degree. C.
摘要翻译： PCT No.PCT / DE96 / 01277 Sec。 371日期：1998年2月4日 102（e）1998年2月4日PCT 1996年7月12日PCT PCT。出版物WO97 / 06556 日期：1997年2月20日在第一步骤的结构中制造间隔层的方法中，通过各向异性干蚀刻制造结构，在另一步骤中，氧化物层以有机硅前体的压力 p = 0.2-1巴，温度为200〜400℃。

58. 发明申请

US20130109171A1 Method for etching substrate 有权
公开(公告)号：US20130109171A1
公开(公告)日：2013-05-02
申请号：US13282491
申请日：2011-10-27
申请人： Manfred Engelhardt
发明人： Manfred Engelhardt
IPC分类号： H01L21/768
CPC分类号： H01L21/3086 , H01L21/3081 , H01L21/78 , Y10S438/95
摘要： One or more embodiments relate to a method of making a semiconductor structure, comprising: forming a patterned metallic layer over a semiconductor substrate; forming a second layer over the patterned metallic layer; and etching the substrate.

59. 发明申请

US20120100689A1 MIM CAPACITOR AND ASSOCIATED PRODUCTION METHOD 有权
标题翻译： MIM电容器及相关生产方法
公开(公告)号：US20120100689A1
公开(公告)日：2012-04-26
申请号：US13342120
申请日：2012-01-02
申请人： Manfred Engelhardt , Andreas Stich , Guenther Schindler , Michael Schrenk
发明人： Manfred Engelhardt , Andreas Stich , Guenther Schindler , Michael Schrenk
IPC分类号： H01L21/02
CPC分类号： H01G4/33 , H01G4/228 , H01G4/40 , H01L28/75
摘要： An MIM capacitor includes a first capacitor electrode, which is formed in the surface of a first intermediate dielectric, a second intermediate dielectric, which is formed on the first intermediate dielectric and has an opening that exposes the first capacitor electrode, and a first electrically conducting diffusion barrier layer, which is formed on the surface of the exposed first capacitor electrode. On the diffusion barrier layer and on the side walls of the opening there is also formed a capacitor dielectric and a second capacitor electrode on top.
摘要翻译： MIM电容器包括形成在第一中间电介质的表面中的第一电容器电极，形成在第一中间电介质上并具有暴露第一电容器电极的开口的第二中间电介质，以及第一导电扩散阻挡层，其形成在暴露的第一电容器电极的表面上。在扩散阻挡层和开口的侧壁上，还在顶部形成电容器电介质和第二电容器电极。

60. 发明授权

US08093637B2 MIM capacitor and associated production method 有权
标题翻译： MIM电容器及相关生产方法
公开(公告)号：US08093637B2
公开(公告)日：2012-01-10
申请号：US11540502
申请日：2006-09-29
申请人： Manfred Engelhardt , Andreas Stich , Guenther Schindler , Michael Schrenk
发明人： Manfred Engelhardt , Andreas Stich , Guenther Schindler , Michael Schrenk
IPC分类号： H01L29/94
CPC分类号： H01G4/33 , H01G4/228 , H01G4/40 , H01L28/75
摘要： An MIM capacitor includes a first capacitor electrode, which is formed in the surface of a first intermediate dielectric, a second intermediate dielectric, which is formed on the first intermediate dielectric and has an opening that exposes the first capacitor electrode, and a first electrically conducting diffusion barrier layer, which is formed on the surface of the exposed first capacitor electrode. On the diffusion barrier layer and on the side walls of the opening there is also formed a capacitor dielectric and a second capacitor electrode on top.
摘要翻译： MIM电容器包括形成在第一中间电介质的表面中的第一电容器电极，形成在第一中间电介质上并具有暴露第一电容器电极的开口的第二中间电介质，以及第一导电扩散阻挡层，其形成在暴露的第一电容器电极的表面上。在扩散阻挡层和开口的侧壁上，还在顶部形成电容器电介质和第二电容器电极。

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