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    • 51. 发明授权
    • Method and device for providing a semiconductor etching end point and for detecting the end point
    • 用于提供半导体蚀刻终点并用于检测终点的方法和装置
    • US06974709B2
    • 2005-12-13
    • US10407015
    • 2003-04-03
    • Klaus BreitschwerdtFranz Laermer
    • Klaus BreitschwerdtFranz Laermer
    • H01J37/32H01L21/00G01R31/26H01L21/66
    • H01L21/67069H01J37/32935
    • A method is provided for detecting an end point, a material transition or a boundary surface during the etching of a semiconductor element, a zone of the semiconductor element having non-homogeneous load carrier density and/or non-homogeneous load carrier polarity, particularly a p-n junction, which has an electrical voltage applied to it during etching, and an electrical current induced by it in this zone is measured, and reaching of this zone during etching is determined from a change in the electrical current. This method is suitable for the detection of the etching end point in gas phase etching, in particular with the aid of the etching gases ClF3 and/or BrF3, or in the anisotropic plasma etching of silicon substrates. In addition, a method is provided for etching a semiconductor element using a gaseous etching medium, during which the speed of removal of the semiconductor element is set or changed via a setting of the polarity and/or the density of free load carriers in the semiconductor element. In addition, a device for etching a semiconductor element, which device is suitable for carrying out the two methods described above, is provided.
    • 提供一种用于在半导体元件的蚀刻期间检测端点,材料转变或边界表面的方法,具有非均匀负载载流子密度和/或非均匀负载载流子极性的半导体元件的区域,特别是 pn结,其在蚀刻期间具有施加到其上的电压,并且测量在该区域中由其感生的电流,并且根据电流的变化来确定蚀刻期间该区域的到达。 该方法适用于在气相蚀刻中特别是借助于蚀刻气体ClF 3 3和/或BrF 3 3的蚀刻终点的检测,或者在 硅衬底的各向异性等离子体蚀刻。 此外,提供了一种使用气体蚀刻介质蚀刻半导体元件的方法,在该方法中,通过设置半导体中的自由载流子的极性和/或密度来设定或改变半导体元件的移除速度 元件。 此外,提供了一种用于蚀刻半导体元件的装置,该装置适合于执行上述两种方法。
    • 52. 发明授权
    • Method of producing a radiation sensor
    • 辐射传感器的制造方法
    • US06372656B1
    • 2002-04-16
    • US09406272
    • 1999-09-24
    • Franz LaermerWilhelm Frey
    • Franz LaermerWilhelm Frey
    • H01L21302
    • G01J5/12H01L31/09
    • A method of producing an infrared sensor on a semiconductor substrate involves defining at least one area on the surface of the semiconductor substrate where a recess is to be created in the semiconductor substrate, depositing a membrane on the surface, applying a radiation absorber to the membrane in the defined area, applying thermoelements with a hot contact in thermal contact with the radiation absorber and a cold contact in thermal contact with the semiconductor substrate. In this method, an opening is provided in the membrane in the defined area, and the semiconductor substrate is etched through the opening.
    • 在半导体衬底上制造红外传感器的方法包括:在半导体衬底的表面上形成至少一个区域,在半导体衬底的表面上形成凹槽,在半导体衬底中形成凹槽,在表面上沉积膜,向膜上施加辐射吸收体 在限定的区域中,将具有与辐射吸收体热接触的热接触件的热电偶和与半导体衬底热接触的冷接触件加热。 在该方法中,在限定区域中的膜中设置开口,并且通过开口蚀刻半导体衬底。
    • 58. 发明授权
    • Bending transducer for generating electrical energy from mechanical deformations
    • 用于从机械变形产生电能的弯曲换能器
    • US08040023B2
    • 2011-10-18
    • US12538389
    • 2009-08-10
    • Franz LaermerThorsten PannekRalf ReichenbachMarian Keck
    • Franz LaermerThorsten PannekRalf ReichenbachMarian Keck
    • H01L41/113H01L41/053
    • H01L41/1134B60C23/041H01L41/0475
    • A bending transducer device for generating electrical energy from deformations, and a circuit module which has such a bending transducer. The bending transducer includes at least one electrically deformable, vibration-capable, electrically conductive support structure, one piezoelectric element and a first contacting element, the conductive support structure having a first restraining area and a second restraining area for restraining the support structure, the piezoelectric element being designed and situated on the support structure in such a way that the piezoelectric element is deformable due to the deformation of the support structure caused by vibrations, and a first electrode for picking up the voltage generated by the deformation of the piezoelectric element is formed and contacted by the support structure, the first contacting element being connected electrically conductively to the support structure outside the first restraining area and the second restraining area.
    • 一种用于从变形产生电能的弯曲换能器装置,以及具有这种弯曲换能器的电路模块。 弯曲换能器包括至少一个可电动变形的,具有振动能力的导电支撑结构,一个压电元件和第一接触元件,所述导电支撑结构具有用于约束支撑结构的第一约束区和第二约束区, 元件被设计并且位于支撑结构上,使得压电元件由于由振动引起的支撑结构的变形而变形,并且形成用于拾取由压电元件的变形产生的电压的第一电极 并且由所述支撑结构接触,所述第一接触元件电连接到所述第一约束区域和所述第二约束区域外的所述支撑结构。