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    • 58. 发明授权
    • Chemically assisted mechanical cleaning of MRAM structures
    • MRAM结构的化学辅助机械清洗
    • US07067016B1
    • 2006-06-27
    • US10404403
    • 2003-03-31
    • Katrina MikhaylichenkoMichael Ravkin
    • Katrina MikhaylichenkoMichael Ravkin
    • B08B7/00
    • B08B1/04B08B3/08C11D7/06C11D11/0047H01L21/67046Y10S438/906
    • A method for post-etch cleaning of a substrate with MRAM structures and MJT structures and materials is disclosed. The method includes inserting the substrate into a first brush box configured for double-sided mechanical cleaning of the substrate. A non-HF, copper compatible chemistry is introduced into the first brush box for cleaning the active and backside surfaces of the substrate. The substrate is then inserted into a second brush box which is also configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate. A burst of chemistry is introduced into the second brush box followed by a DIW rinse. The substrate is then processed through an SRD apparatus for final rinse and dry.
    • 公开了一种使用MRAM结构和MJT结构和材料对衬底进行后蚀刻清洁的方法。 该方法包括将基板插入被配置为用于基板的双面机械清洁的第一刷盒中。 将非HF,铜兼容化学物质引入到第一刷盒中以清洁基底的活性和背面。 然后将衬底插入第二刷盒中,第二刷盒还被配置为提供衬底的活性和背面的双面机械清洁。 将化学爆炸物引入第二刷盒中,然后进行DIW冲洗。 然后将基底通过SRD装置进行处理,以进行最终冲洗和干燥。
    • 59. 发明申请
    • System and method for a combined contact and non-contact wafer cleaning module
    • 组合接触和非接触式晶片清洗模块的系统和方法
    • US20060096048A1
    • 2006-05-11
    • US11316780
    • 2005-12-23
    • Katrina MikhaylichenkoMichael RavkinJohn deLarios
    • Katrina MikhaylichenkoMichael RavkinJohn deLarios
    • B08B1/04
    • B08B1/04H01L21/67046
    • A system and a method for cleaning and rinsing a wafer includes at least three rollers that are capable of supporting a wafer by an edge of the wafer. At least one of the rollers is driven and thereby capable of rotating the wafer. At least one of the rollers is a movable roller mounted on an actuator. The system and method also includes a first movable scrubbing roller capable of being moved away from and alternatively to the first side of the wafer. A second movable scrubbing roller capable of being moved away from and alternatively to a second side of the wafer is also included. The second side of the wafer opposes the first side of the wafer. The system and method also includes at least one first side nozzle directed toward the first side of the wafer and at least one second side nozzle directed toward the second side of the wafer.
    • 用于清洁和漂洗晶片的系统和方法包括能够通过晶片的边缘支撑晶片的至少三个辊。 驱动至少一个辊,从而能够使晶片旋转。 至少一个辊是安装在致动器上的可动辊。 该系统和方法还包括能够远离晶片的第一侧移动的第一可移动擦洗辊。 还包括能够移动离开晶片的另一侧的第二可动擦洗辊。 晶片的第二面与晶片的第一面相反。 该系统和方法还包括朝向晶片的第一侧的至少一个第一侧喷嘴和朝向晶片的第二侧的至少一个第二侧喷嘴。
    • 60. 发明授权
    • Substrate cleaning brush preparation sequence, method, and system
    • 基材清洁刷制备顺序,方法和系统
    • US06733596B1
    • 2004-05-11
    • US10328887
    • 2002-12-23
    • Katrina MikhaylichenkoMichael Ravkin
    • Katrina MikhaylichenkoMichael Ravkin
    • B08B704
    • H01L21/67046B08B1/04B08B3/02
    • A method for cleaning top and bottom surfaces of a semiconductor substrate is provided. The method includes scrubbing top and bottom surfaces of the semiconductor wafer with top and bottom brushes, respectively. Top and bottom brushes are saturated and supplied with a scrubbing fluid. The top and bottom brushes are squeezed so as to press out excess scrubbing fluid by continuing to apply top and bottom brushes against top and bottom surfaces of the semiconductor substrate, respectively, but without supplying the scrubbing fluid. Top and bottom brushes are respectively moved away from the top and bottom surfaces of the semiconductor substrate. The top brush is rotated so as to prevent dripping onto the top surface of the semiconductor substrate. Top and bottom surfaces of the semiconductor substrate are rinsed using a rinse fluid while continuing to rotate the top brush that was squeezed to press out the excess scrubbing fluid.
    • 提供一种用于清洁半导体衬底的顶表面和底表面的方法。 该方法包括分别用顶刷和底刷擦洗半导体晶片的顶表面和底表面。 顶部和底部刷子是饱和的,并提供洗涤液。 顶部和底部刷子被挤压以便分别通过将顶部和底部刷子分别对准半导体衬底的顶部和底部表面,但不供应洗涤流体来压出多余的洗涤流体。 顶部和底部刷子分别从半导体衬底的顶部和底部表面移开。 顶刷被旋转以防止滴在半导体衬底的顶表面上。 使用冲洗液冲洗半导体衬底的顶表面和底表面,同时继续旋转顶部刷,挤压挤出多余的洗涤流体。