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51. 发明授权

US06787470B2 Sacrificial feature for corrosion prevention during CMP 有权
标题翻译： CMP期间防腐蚀的牺牲特征
公开(公告)号：US06787470B2
公开(公告)日：2004-09-07
申请号：US10150300
申请日：2002-05-17
申请人： Chu-Wei Hu , Tsu Shih , Chen Cheng Chou
发明人： Chu-Wei Hu , Tsu Shih , Chen Cheng Chou
IPC分类号： H01L21302
CPC分类号： H01L21/7684 , H01L21/3212 , Y10S438/959
摘要： A sacrificial semiconductor feature for preventing corrosion that can result during chemical-mechanical planarization (CMP) is disclosed. A semiconductor device of the invention is fabricated at least in part by performing CMP. The device includes a desired semiconductor feature and a sacrificial semiconductor feature. The desired semiconductor feature may have an unbalanced geometric pattern that includes a metallic line ending in at least one tip. The at least one tip is susceptible to corrosion resulting from performing CMP. The sacrificial semiconductor feature is preferably located off the metallic line of the desired semiconductor feature. The sacrificial semiconductor feature attracts charge induced during CMP that is otherwise attracted by the at least one tip of the desired semiconductor feature. The presence of the sacrificial semiconductor feature thus substantially prevents corrosion of the desired semiconductor feature, including its tip(s).
摘要翻译：公开了一种用于防止在化学机械平面化（CMP）期间可能产生的腐蚀的牺牲半导体特征。至少部分地通过执行CMP来制造本发明的半导体器件。该器件包括期望的半导体特征和牺牲半导体特征。期望的半导体特征可以具有不平衡几何图案，其包括终止于至少一个尖端的金属线。至少一个尖端容易受到执行CMP的腐蚀。牺牲半导体特征优选地位于期望的半导体特征的金属线之外。牺牲半导体特征吸引由CMP期望的半导体特征的至少一个尖端吸引的电荷。因此牺牲半导体特征的存在基本上防止了期望的半导体特征（包括其尖端）的腐蚀。

52. 发明授权

US06638328B1 Bimodal slurry system 有权
标题翻译：双峰浆体系
公开(公告)号：US06638328B1
公开(公告)日：2003-10-28
申请号：US10132441
申请日：2002-04-25
申请人： Shen-Nan Lee , Tsu Shih , Syun Ming Jang
发明人： Shen-Nan Lee , Tsu Shih , Syun Ming Jang
IPC分类号： C09G102
CPC分类号： C09K3/1436 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： A bimodal slurry system for a chemical mechanical polishing process including a dispersion comprising a plurality of first particles and a plurality of at least one type of second particles said first particles having a mean particle diameter larger by at least a factor of 3 than a mean particle diameter of the at least one type of second particles said first particles further being compressible.
摘要翻译：一种用于化学机械抛光方法的双峰淤浆系统，包括分散体，其包含多个第一颗粒和多个至少一种第二颗粒，所述第一颗粒的平均粒径比平均颗粒大至少3倍所述至少一种类型的第二颗粒的直径，所述第一颗粒进一步是可压缩的。

53. 发明授权

US06599838B1 Method for forming metal filled semiconductor features to improve a subsequent metal CMP process 有权
标题翻译：用于形成金属填充的半导体特征以改进随后的金属CMP工艺的方法
公开(公告)号：US06599838B1
公开(公告)日：2003-07-29
申请号：US10188442
申请日：2002-07-02
申请人： Tsu Shih , Sung-Ming Jang
发明人： Tsu Shih , Sung-Ming Jang
IPC分类号： H01L214763
CPC分类号： H01L21/76802 , H01L21/3212 , H01L21/76829 , H01L21/7684
摘要： A method for forming a metal filled semiconductor feature including a low dielectric constant CMP polishing stop layer for improving a CMP polishing process including providing a semiconductor processing surface having a anisotropically etched semiconductor feature formed through a thickness including a second dielectric insulating layer overlying a first dielectric insulating layer, the second dielectric insulating layer having a CMP material removal rate in a CMP process less than about ½ of a CMP material removal rate of the first dielectric insulating layer in the CMP process; filling the anisotropically etched semiconductor feature with a metal to form a metal filled semiconductor feature; and, planarizing according to the CMP process excess material including the metal overlying the second dielectric insulating layer.
摘要翻译：一种形成金属填充半导体器件的方法，包括用于改善CMP抛光工艺的低介电常数CMP抛光停止层，包括提供具有各向异性蚀刻半导体特征的半导体处理表面，所述半导体处理表面通过厚度形成，所述厚度包括覆盖在第一电介质绝缘层，所述第二介电绝缘层在CMP工艺中具有小于CMP工艺中第一介电绝缘层的CMP材料去除速率的约1/2的CMP材料去除速率; 用金属填充各向异性蚀刻的半导体特征以形成金属填充的半导体特征; 并且根据CMP工艺平面化包括覆盖在第二介电绝缘层上的金属的多余材料。

54. 发明授权

US06544891B1 Method to eliminate post-CMP copper flake defect 有权
标题翻译：消除CMP后铜片缺陷的方法
公开(公告)号：US06544891B1
公开(公告)日：2003-04-08
申请号：US09945435
申请日：2001-09-04
申请人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang
发明人： Ying-Ho Chen , Wen-Chih Chiou , Tsu Shih , Syun-Ming Jang
IPC分类号： H01L2144
CPC分类号： H01L21/7684 , H01L21/76838
摘要： A method of copper metallization wherein copper flaking and metal bridging problems are eliminated by an annealing process is described. A first metal line is provided on an insulating layer overlying a semiconductor substrate. A dielectric stop layer is deposited overlying the first metal line. A dielectric layer is deposited overlying the dielectric stop layer. An opening is etched through the dielectric layer and the dielectric stop layer to the first metal line. A barrier metal layer is deposited over the surface of the dielectric layer and within the opening. A copper layer is deposited over the surface of the barrier metal layer. The copper layer and barrier metal layer not within the opening are polished away wherein after a time period, copper flakes form on the surface of the copper and dielectric layers. The copper layer and the dielectric layer are alloyed whereby the copper layer is stabilized and the copper flakes are removed to complete copper damascene metallization in the fabrication of an integrated circuit.
摘要翻译：描述了通过退火工艺消除铜剥落和金属桥接问题的铜金属化方法。第一金属线设置在覆盖在半导体衬底上的绝缘层上。沉积在第一金属线上的电介质停止层。介电层沉积在介电阻挡层上。通过介电层和电介质停止层蚀刻开口到第一金属线。阻挡金属层沉积在电介质层的表面上并且在开口内。在阻挡金属层的表面上沉积铜层。不在开口内的铜层和阻挡金属层被抛光，其中在一段时间之后，在铜和电介质层的表面上形成铜片。将铜层和电介质层合金化，由此铜层稳定，并且在制造集成电路中去除铜片以完成铜镶嵌金属化。

55. 发明授权

US06515366B1 Reduction of metal corrosion in semiconductor devices 有权
标题翻译：减少半导体器件中的金属腐蚀
公开(公告)号：US06515366B1
公开(公告)日：2003-02-04
申请号：US10077071
申请日：2002-02-14
申请人： Wen-Chih Chiou , Tsu Shih
发明人： Wen-Chih Chiou , Tsu Shih
IPC分类号： H01L2980
CPC分类号： H01L23/26 , H01L21/76838 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： Reducing metal corrosion, such as copper corrosion, in semiconductor devices, is disclosed. A semiconductor device includes an insulating layer, a metal line, one or more corrosive metal components, and one or more sacrificial corrosive metal components. The metal line is situated within the insulating layer. The one or more corrosive metal components are situated within the insulating layer and connected to the metal line. The one or more sacrificial corrosive metal components are situated within the insulating layer and connected to the metal line. The presence of the sacrificial components substantially reduces corrosion of the non-sacrificial components.
摘要翻译：公开了减少半导体器件中的铜腐蚀等金属腐蚀现象。半导体器件包括绝缘层，金属线，一种或多种腐蚀性金属成分，以及一种或多种牺牲腐蚀性金属成分。金属线位于绝缘层内。一个或多个腐蚀性金属部件位于绝缘层内并连接到金属线。一个或多个牺牲腐蚀性金属部件位于绝缘层内并连接到金属线。牺牲部件的存在大大减少了非牺牲部件的腐蚀。

56. 发明授权

US06443810B1 Polishing platen equipped with guard ring for chemical mechanical polishing 有权
标题翻译：抛光台装有防护环，用于化学机械抛光
公开(公告)号：US06443810B1
公开(公告)日：2002-09-03
申请号：US09547256
申请日：2000-04-11
申请人： Tsu Shih
发明人： Tsu Shih
IPC分类号： B24B100
CPC分类号： B24B37/16 , B24D9/08
摘要： A polishing pad platen that is equipped with a guard ring, or a slurry retaining collar, used in chemical mechanical polishing (CMP) for conserving usage of polishing slurry is described. A method for conserving slurry solution during a CMP process is further described. In the novel polishing pad platen, a guard ring is mounted to the platen by sealiningly engaging an outer periphery of the platen for preventing spilling out of slurry solution during a polishing operation. The guard ring is mounted to slidingly engage the platen in such a way that the ring may be lowered to be completely out of the way during a pad condition process in which the spinning out of a pad conditioning solution from a top surface of the polishing pad is necessary.
摘要翻译：描述了用于化学机械抛光（CMP）中用于保存抛光浆料的使用的抛光垫板，其配备有保护环或浆料保持环。进一步描述了在CMP工艺期间保存浆液的方法。在新型抛光垫台板中，通过密封地接合压板的外周而将保护环安装到压板上，以防止在抛光操作期间溢出浆液。保护环被安装成滑动地接合压板，使得环可以在衬垫状态过程中完全脱落，其中从抛光垫的顶表面旋出焊盘调节溶液是必要的。

57. 发明授权

US06398627B1 Slurry dispenser having multiple adjustable nozzles 有权
标题翻译：浆料分配器具有多个可调喷嘴
公开(公告)号：US06398627B1
公开(公告)日：2002-06-04
申请号：US09815427
申请日：2001-03-22
申请人： Wen-Chih Chiou , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
发明人： Wen-Chih Chiou , Ying-Ho Chen , Tsu Shih , Syun-Ming Jang
IPC分类号： B24B900
CPC分类号： B24B37/04 , B24B57/02
摘要： A slurry dispensing unit for a chemical mechanical polishing apparatus equipped with multiple slurry dispensing nozzles is disclosed. The slurry dispensing unit is constructed by a dispenser body that has a delivery conduit, a return conduit and a U-shape conduit connected in fluid communication therein between for flowing continuously a slurry solution therethrough and a plurality of nozzles integrally connected to and in fluid communication with a fluid passageway in the delivery conduit for dispensing a slurry solution. The multiple slurry dispensing nozzles may either have a fixed opening or adjustable openings by utilizing a flow control valve at each nozzle opening.
摘要翻译：公开了一种用于配备有多个浆料分配喷嘴的化学机械抛光设备的浆料分配单元。浆料分配单元由分配器主体构成，分配器主体具有输送管道，回流管道和连接在其中的流体连通的U形管道，用于连续地流动通过其中的浆液;以及多个喷嘴，其一体地连接到流体连通在输送管道中具有用于分配浆液的流体通道。多个浆料分配喷嘴可以通过在每个喷嘴开口处利用流量控制阀来具有固定的开口或可调节的开口。

58. 发明授权

US6118185A Segmented box-in-box for improving back end overlay measurement 有权
标题翻译：分段盒装盒，用于改进后端重叠测量
公开(公告)号：US6118185A
公开(公告)日：2000-09-12
申请号：US262303
申请日：1999-03-04
申请人： Jeng-Horng Chen , Tsu Shih
发明人： Jeng-Horng Chen , Tsu Shih
IPC分类号： G03F7/20 , H01L23/544 , H01L21/46 , H01L21/76 , H01L21/78 , H01L23/58
CPC分类号： G03F7/70633 , Y10S438/975
摘要： An improvement in the box-in-box overlay measurement method has been achieved by forming the outer box from a segmented trench comprised of a number of concentric ridges that project upwards from the floor of the trench. When the segmented trench has been overfilled with tungsten (or similar metal) the excess metal is removed using either etch-back or chem. mech. polishing as the planarizing technique. Because of the presence of the ridges, the trench (i.e. the outer box) becomes reproducibly easy to see when the inner box (which will be etched from a second layer deposited on the first one) is being positioned inside it. Furthermore, the tendency for the outer box to be broken in critical places (often seen in the prior art) is now largely eliminated.
摘要翻译：通过从包括从沟槽的底部向上突出的多个同心脊组成的分段沟槽形成外盒已经实现了箱内叠加测量方法的改进。当分段的沟槽已经用钨（或类似的金属）过量填充时，使用回蚀或化学去除多余的金属。机械抛光作为平面化技术。由于脊的存在，当内盒（将从第一层沉积的第二层蚀刻时）位于其内部时，沟槽（即外盒）变得可再现地容易看到。此外，现在很大程度上消除了外箱在关键位置的破坏（通常在现有技术中看到）的倾向。

59. 发明授权

US5933744A Alignment method for used in chemical mechanical polishing process 失效
标题翻译：用于化学机械抛光工艺的对准方法
公开(公告)号：US5933744A
公开(公告)日：1999-08-03
申请号：US54302
申请日：1998-04-02
申请人： Jeng-Horng Chen , Tsu Shih , Jui-Yu Chang , Chung-Long Chang
发明人： Jeng-Horng Chen , Tsu Shih , Jui-Yu Chang , Chung-Long Chang
IPC分类号： H01L21/3105 , H01L23/544 , H01L21/465 , H01L21/76
CPC分类号： H01L23/544 , H01L21/31053 , H01L2223/54453 , H01L2924/0002 , Y10S438/975
摘要： A method of alignment for a chemical mechanical polishing includes previously patterning a primary zero alignment mark on a surface of a wafer. A first dielectric layer is deposited on the wafer for isolation. Then, an etching is used to etch the first dielectric layer using a photoresist as a mask. First conductive plugs are formed in the first dielectric layer. Next, a first conductive layer is formed on the surface of the first dielectric layer and on the tungsten plugs. Thus, the first non-zero alignment mark pattern is formed on the surface of the first conductive layer and aligned to the first conductive plugs. Next, a second non-zero alignment mark pattern is thus formed on the surface of a second conductive layer and aligned to the a second conductive plugs. By repeating the aforementioned method, odd non-zero alignment mark patterns will be formed over the first non-zero alignment mark pattern, and even non-zero alignment mark patterns will be formed over the second non-zero alignment mark pattern. Therefore, the present invention save space to put non-zero alignment marks in multilevel interconnection and planarization processes.
摘要翻译：用于化学机械抛光的对准方法包括预先对晶片表面上的初级零对准标记进行图案化。第一介电层沉积在晶片上用于隔离。然后，使用蚀刻来使用光致抗蚀剂作为掩模蚀刻第一介电层。在第一电介质层中形成第一导电插塞。接下来，在第一电介质层的表面和钨插塞上形成第一导电层。因此，第一非零对准标记图案形成在第一导电层的表面上并与第一导电插塞对准。接下来，在第二导电层的表面上形成第二非零对准标记图案，并与第二导电插塞对准。通过重复上述方法，将在第一非零对准标记图案上形成奇数非零对准标记图案，并且甚至在第二非零对准标记图案上形成非零对准标记图案。因此，本发明节省空间，将非零对准标记放置在多层互连和平面化处理中。

60. 发明授权

US5709755A Method for CMP cleaning improvement 失效
标题翻译： CMP清洗改进方法
公开(公告)号：US5709755A
公开(公告)日：1998-01-20
申请号：US694728
申请日：1996-08-09
申请人： So Wein Kuo , Tsu Shih , Chung-Long Chang
发明人： So Wein Kuo , Tsu Shih , Chung-Long Chang
IPC分类号： B08B1/04 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/30
CPC分类号： H01L21/02052 , B08B1/04 , H01L21/02024 , H01L21/67046
摘要： Using an APM solution to clean both the front and backside of a semiconductor wafer significantly reduces the residue from chemical mechanical polishing. A low residue count holds the wafer more securely to the electrostatic chuck, thus improving processing, reducing wear on the electrostatic chuck, and increasing its lifetime.
摘要翻译：使用APM解决方案清洁半导体晶片的正面和背面显着减少化学机械抛光的残留物。低残留数量将晶片更牢固地保持在静电卡盘上，从而改善处理，减少静电卡盘上的磨损，并延长其使用寿命。

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