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51. 发明公开

EP4272961A1 PROCÉDÉ DE FABRICATION D'UNE PIÈCE EN ALLIAGE D'ALUMINIUM PAR FABRICATION ADDITIVE 审中-实审
公开(公告)号：EP4272961A1
公开(公告)日：2023-11-08
申请号：EP23171102.9
申请日：2023-05-02
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： MANLAY, Marie-Reine , FLAMENT, Camille , GARANDET, Jean-Paul , SOULIER, Mathieu
IPC分类号： B33Y70/10 , C22C1/05 , C22C32/00 , C22C1/047 , C22C1/04 , B22F10/28
摘要： Procédé de fabrication d'une pièce en aluminium ou en alliage d'aluminium par fabrication additive comprenant une étape au cours de laquelle une couche d'un mélange de poudres est localement fondue puis solidifiée, caractérisé en ce que le mélange de poudres comprend :
- des premières particules en un alliage d'aluminium, et
- des deuxièmes particules en carbure de silicium, et
- des troisièmes particules comprenant du zirconium.

52. 发明公开

EP3741482A1 PROCEDE DE FABRICATION D'UNE PIECE EN ALLIAGE D ALUMINIUM PAR FABRICATION ADDITIVE A PARTIR D'UN MELANGE DE POUDRES CONTENANT DE LA ZIRCONE YTTRIEE 有权
公开(公告)号：EP3741482A1
公开(公告)日：2020-11-25
申请号：EP20172977.9
申请日：2020-05-05
申请人： Commissariat à l'énergie atomique et aux énergies alternatives
发明人： OPPRECHT, Mathieu , GARANDET, Jean-Paul , ROUX, Guilhem , SOULIER, Mathieu
IPC分类号： B22F3/105 , B29C64/141 , B29C64/153 , B33Y70/00 , B22F3/00 , B33Y10/00 , B33Y70/10 , B33Y80/00 , C22C1/04 , C22C32/00
摘要： Procédé de fabrication d'une pièce en alliage d'aluminium par fabrication additive comprenant une étape au cours de laquelle une couche d'un mélange de poudres est localement fondue puis solidifiée, caractérisé en ce que le mélange de poudres comprend :
- des premières particules (10) comprenant au moins 80% massique d'aluminium et jusqu'à 20% massique d'un ou plusieurs éléments additionnels, et
- des deuxièmes particules (20) en zircone yttriée,
le mélange de poudres comprenant au moins 1,5% volumique de deuxièmes particules.

53. 发明授权

EP2802532B1 PROCÉDÉ DE PURIFICATION DU SILICIUM 有权
公开(公告)号：EP2802532B1
公开(公告)日：2019-11-06
申请号：EP13705580.2
申请日：2013-01-11
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GARANDET, Jean-Paul , ALBARIC, Mickaël , AUDOIN, Claire , CHAVRIER, Denis , PIHAN, Etienne
IPC分类号： C01B33/037 , C30B11/00 , C30B29/06

54. 发明公开

EP3230497A1 PAVAGE DE GERMES UTILISÉS DANS UN CREUSET POUR LA SOLIDIFICATION DIRIGÉE DE SILICIUM COMPORTANT DES GERMES DÉSORIENTÉS VIS À VIS DU GERME ADJACENT 有权
标题翻译： PAVAGE DE GERMESUTILISÉSDANS联合国克勒塞倒拉凝固DIRIGÉEDE硅COMPORTANT DES GERMESDÉSORIENTÉS相一相杜GERME邻
公开(公告)号：EP3230497A1
公开(公告)日：2017-10-18
申请号：EP15817125.6
申请日：2015-12-11
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： PIHAN, Etienne , GARANDET, Jean-Paul , PLASSAT, Nelly
IPC分类号： C30B11/14 , C30B29/06
CPC分类号： C30B29/06 , C30B11/14 , C30B28/06
摘要： The present invention relates to an organized assembly of adjacent silicon single crystals for the directional solidification of an ingot along a solidification direction, the oriented single crystals of which, observed over a section perpendicular to the solidification direction Z are such that the disorientation of an oriented single crystal with an adjacent single crystal is greater than 8°, the smallest angle between a normal to the joint separating the single crystal from an adjacent oriented single crystal and the directions of said adjacent single crystal is greater than 4°, the smallest angle between the direction Z and the directions of said single crystal is less than 25° and /or the smallest of the angles between the direction Z and the directions of the single crystal is less than 10°, and the projection distance in a plane perpendicular to the direction Z, of the largest dimension of said single crystal, measured among the planes {111} and along the directions , is less than 40 mm.
摘要翻译：本发明涉及一种用于沿着凝固方向定向凝固铸锭的相邻硅单晶的有组织的组件，其在沿着与凝固方向Z垂直的截面上观察到的定向单晶是这样的，使得取向的定向障碍具有相邻单晶的单晶大于8°，将单晶与相邻取向单晶分开的接点的法线与所述相邻单晶的方向<111>之间的最小角度大于4°，方向Z与所述单晶的方向<100>之间的最小角度小于25°和/或方向Z与单晶的方向<111>之间的角度中最小的角度小于10°，并且在平面{111}之间和沿着d方向测量的在与方向Z垂直的平面中的所述单晶的最大尺寸的投影距离指向<110>，小于40毫米。

55. 发明公开

EP3049223A1 PROCEDE ET DISPOSITIF DE DECOUPE FILAIRE D'UN MATERIAU 有权
标题翻译：方法和装置的电线切割材料
公开(公告)号：EP3049223A1
公开(公告)日：2016-08-03
申请号：EP14776619.0
申请日：2014-09-23
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： SILLARD, Léo , GARANDET, Jean-Paul , PENOT, Jean-Daniel
IPC分类号： B28D5/00 , B28D5/04 , B23Q17/09
CPC分类号： B28D5/0064 , B28D5/045 , G05B19/418 , G05B2219/45031 , G05B2219/50331
摘要： The invention relates to a method for wire cutting of a material (200), wherein a cutting wire is advanced (102) into the material (200) by causing said wire to scroll in such a way as to progressively cut the material, the method being characterised in that it comprises: - the measurement of a force (F) applied by the wire (102) on the material (200) as a function of time, - the measurement of the advancement of the wire (102) in the material (200) as a function of time, - the determination, as a function of said force and said advancement of the wire, of a variable (EF) characterising the state of the wire cutting and, - servo control of at least one cutting parameter through changes in said variable (EF) so as to reduce the rate of wear of the wire and/or to reduce the risk of breaking of the wire. The invention also relates to a device for wire cutting allowing implementation of said method.

56. 发明公开

EP2965362A1 PLAQUETTE DE SILICIUM MONOLITHIQUE PRESENTANT UNE ALTERNANCE DE ZONES DOPEES N ET DE ZONES DOPEES P 审中-公开
标题翻译：具有交替的N型和P型掺杂区单片硅晶片
公开(公告)号：EP2965362A1
公开(公告)日：2016-01-13
申请号：EP14713263.3
申请日：2014-03-06
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GARANDET, Jean-Paul , DUBOIS, Sébastien , ENJALBERT, Nicolas , VEIRMAN, Jordi , VESCHETTI, Yannick
IPC分类号： H01L31/0352 , H01L21/761 , H01L31/068 , H01L31/18 , H01L27/142 , H01L31/0687
CPC分类号： H01L31/1804 , H01L21/761 , H01L31/03529 , H01L31/047 , H01L31/068 , H01L31/0687 , Y02E10/547 , Y02P70/521
摘要： The present invention concerns a monolithic silicon wafer (10) having, in at least a vertical cutting plane, alternating n-doped areas (110) and p-doped areas (120), each of the areas extending over the entire thickness (e) of the wafer, characterised in that: - said n-doped areas (110) and p-doped areas (120) each have, in the cutting plane, a width (L
1 , L2) of at least 1 mm; - the n-doped areas (110) have a concentration of oxygen thermal donors different from that of the p-doped areas (120); and - said n-doped areas (110) and said p-doped areas are separated from each other by electrical insulation areas (130). It also concerns methods of producing such a wafer.

57. 发明公开

EP2898123A1 PROCEDE DE FORMATION D'UNE COUCHE DE SILICIUM EPITAXIEE 审中-公开
标题翻译：方法生产外延硅层
公开(公告)号：EP2898123A1
公开(公告)日：2015-07-29
申请号：EP13798753.3
申请日：2013-09-23
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： BENMANSOUR, Malek , GARANDET, Jean-Paul , MORVAN, Daniel
IPC分类号： C30B23/02 , C30B23/06 , C30B25/10 , C30B25/18 , C30B25/20 , C30B28/14 , C30B29/06 , C23C16/24 , C23C16/513 , H01L21/205 , H01L31/18 , H01L21/02
CPC分类号： C30B25/105 , C23C16/24 , C23C16/513 , C30B25/16 , C30B25/18 , C30B25/20 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L31/1804 , H05H1/30 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for forming a crystallised silicon layer (2) having a crystallite size higher than or equal to 100 µm, by means of epitaxial growth in a vapour phase, on the surface of at least one silicon substrate (1), comprising at least the steps consisting in: (i) providing a silicon substrate (1) having a particle size higher than or equal to 100 µm and comprising a metal impurities content of between 0 ppb and 1 ppm by weight; and (ii) forming said silicon layer on the surface of said substrate heated to a temperature of between 1000 and 1300 °C, by decomposition of at least one silicon precursor by means of an inductive plasma torch (4), the surface (11) of said substrate for supporting the silicon layer (2) being positioned close to the outlet of the plasma torch in step (ii).

58. 发明公开

EP2896076A1 DISPOSITIF ET PROCÉDÉ DE RESTAURATION DES CELLULES SOLAIRES À BASE DE SILICIUM AVEC TRANSDUCTEUR ULTRASON 有权
标题翻译：装置和方法用于回收光伏与硅基太阳能电池的使用超声波换能器
公开(公告)号：EP2896076A1
公开(公告)日：2015-07-22
申请号：EP13774465.2
申请日：2013-09-16
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： DUBOIS, Sébastien , ENJALBERT, Nicolas , GARANDET, Jean-Paul , GIDON, Pierre , TANAY, Florent , VEIRMAN, Jordi
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L31/028 , H01L31/04 , H01L31/182 , H01L31/186 , H02S99/00 , Y02E10/546 , Y02P70/521 , Y10T29/41
摘要： The invention relates to a device for restoring at least one silicon-based photovoltaic solar cell, which comprises a carrier (1) of said cell (2), a heat source (20) configured to heat the photovoltaic solar cell (2), and a means (3) for generating charge bearers in the cell (2). In order to better accelerate the kinetics of the restoration of said solar cell (2), the device comprises an ultrasound transducer (20) to be used for generating ultrasound waves that propagate in the photovoltaic solar cell (2).

59. 发明公开

EP2855743A1 PROCEDE DE FORMATION D'UNE COUCHE DE SILICIUM EPITAXIEE 有权
标题翻译：硅外延层制造工艺
公开(公告)号：EP2855743A1
公开(公告)日：2015-04-08
申请号：EP13731962.0
申请日：2013-05-22
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： GARANDET, Jean-Paul , PIHAN, Etienne
IPC分类号： C30B29/06 , C30B19/12 , C30B25/20 , C30B25/18
CPC分类号： H01L21/02636 , C30B19/12 , C30B25/186 , C30B25/20 , C30B29/06 , H01L21/02439 , H01L21/02513 , H01L21/02532 , H01L21/02634 , H01L21/02639 , H01L21/30604 , H01L21/3065
摘要： The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 µm, including at least the steps that involve: (1) providing a layer of crystallised silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 µm, and small crystallites of a smaller size; (2) forming, on the surface of said inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such as to cover the entire outer surface of said small crystallites, while leaving all or part of the outer surface of said large crystallites accessible; and (3) carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step (2), under conditions that are suitable for forming said expected epitactic layer.

60. 发明公开

EP2513997A1 DISPOSITIF D'ENCAPSULATION A ETANCHÉITÉ AMELIORÉE 有权
标题翻译：一种改善了密封封装的器件
公开(公告)号：EP2513997A1
公开(公告)日：2012-10-24
申请号：EP10790554.9
申请日：2010-12-09
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives , Université de Savoie
发明人： CROS, Stéphane , ALBEROLA, Nicole , GARANDET, Jean-Paul , MORLIER, Arnaud
IPC分类号： H01L51/52 , H01L51/44 , H01L31/048 , B65D81/05
CPC分类号： H01L51/5237 , H01L51/448 , H01L51/524 , Y02E10/549
摘要： The invention relates to an encapsulation device (2) comprising two casings (12) made of a flexible polymer material, each delimiting a sealed space, and at least one hydrophobic material (14) filling each of said casings, said casings (12) being stacked and sealingly interconnected at the peripheral edges thereof, a sealed space (6) then being defined between the two casings for receiving a device to be encapsulated (4).

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