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51. 发明专利

DE19636496C2 未知
公开(公告)号：DE19636496C2
公开(公告)日：2000-11-30
申请号：DE19636496
申请日：1996-09-09
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , HERMANNS INGO , KOERTJE FRANK , WESTENDORF THOMAS , ZIMMERMANN HOLGER , REPPER WILFRIED
IPC分类号： F16F15/04 , F16F15/00 , G11B33/08 , H05K5/00 , F16F15/02
摘要： Spring arrangement for mounting a vibration- or shock-sensitive device attached to a supporting member in a housing, with the supporting member being fastened to the housing by helical spring elements. The supporting member is suspended in the housing by helical spring elements so that each elastic force component of one spring applied to the supporting member in a specific direction is counteracted by at least one elastic force component of another spring applied in the opposite direction so that the supporting member remains approximately in the center of the vibration clearance provided regardless of the position in which the housing is mounted in a motor vehicle. Due to the opposing elastic forces of the springs, the spring constant and therefore the natural frequency of the overall system can be advantageously increased, thus avoiding undesired points of resonance at low frequencies.

52. 发明专利

GB2343147B A regulation process for etching with hydrogen fluoride 未知
公开(公告)号：GB2343147B
公开(公告)日：2000-09-27
申请号：GB9925625
申请日：1999-10-29
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , LAERMER FRANZ , SCHILP ANDREA
IPC分类号： H01L21/311 , H01L21/306

53. 发明专利

DE19910983A1 未知
公开(公告)号：DE19910983A1
公开(公告)日：2000-09-21
申请号：DE19910983
申请日：1999-03-12
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , LAERMER FRANZ , SCHILP ANDREA
IPC分类号： B81C99/00 , H01L21/02 , H01L21/66 , H01L21/306
摘要： The invention relates to a device and a method for determining the extent of an at least partial lateral undercut of a structured surface layer (23) on a sacrificial coating (21). To this end, a part of said structured surface layer (23) comprises at least one passive electronic component (31) with which a measurable physical variable can be determined that is proportional to the extent of the lateral undercut. According to the inventive method for producing said device, at least a part of the surface layer (21) on the structured surface layer (23) is provided in a first etching step with a structure comprising trenches (15'). In a second etching step, a lateral undercut on at least a part of the structured surface layer (23) is carried out starting from said trenches (15'). In the first etching step, at least one passive electronic component (31) is additionally produced by structuring a part of the surface layer (23). During the following undercutting of the surface layer (23) said electronic component is also undercut. The measurable physical variable is determined in a contactless manner, preferably by irradiating the passive component (31) with electromagnetic radiation.

54. 发明专利

GB2327909B Process and device for the anisotropic etching of substrates 未知
公开(公告)号：GB2327909B
公开(公告)日：2000-03-08
申请号：GB9817077
申请日：1998-08-05
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , LAERMER FRANZ , SCHILP ANDREA
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065

55. 发明专利

DE19900179C1 Installation for etching substrates by high-density plasmas comprises a phase delay line causing the supply voltages at both ends of the inductively coupled plasma coil to be in counter-phase with one another 未知
公开(公告)号：DE19900179C1
公开(公告)日：2000-02-24
申请号：DE19900179
申请日：1999-01-07
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , LAERMER FRANZ , SCHILP ANDREA , BECK THOMAS
IPC分类号： H05H1/46 , B01J19/08 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F4/00 , H01J37/248
摘要： The invention relates to a plasma processing installation for etching a substrate (9) using a high-density plasma (8) in a reactor (2), whereby an ICP coil (6) comprising a first coil end (20, 20') and a second coil end (21, 21') generates a high frequency electromagnetic alternating field in the reactor (2). Said electromagnetic alternating field acts upon a reactive gas and, as an inductively coupled plasma source (18), produces the high-density plasma (8) out of reactive particles and ions. Both coil ends (20, 20', 21, 21') are each connected via a supply voltage point (31, 32) to a high frequency power supply (23) which applies a high frequency alternating voltage of the frequency to the first coil end (20, 20') and to the second coil end (21, 21'). Both high frequency alternating voltages that are applied to both coil ends (20, 20', 21, 21') are connected to a symmetric, capacitive network in a manner which is at least nearly in antiphase to one another via a lambda /2 delay line (30) which connects the first supply voltage point (32) and the second supply voltage point (31). In addition, said high frequency alternating voltages comprise amplitudes that are at least almost equal.

56. 发明专利

FR2778265A1 未知
公开(公告)号：FR2778265A1
公开(公告)日：1999-11-05
申请号：FR9903363
申请日：1999-03-18
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , ZIMMERMANN HOLGER
IPC分类号： G11B17/26 , G11B17/22 , G11B33/04
摘要： An apparatus for holding in readiness and selecting at least one storage disk is provided. The apparatus includes threaded rods, each having external threads. The at least one storage disk can be guided in the external threads of the threaded rods. Flights of the external threads coact with individual edge regions of at least one inserted storage disk. The at least one storage disk is displaceable along the threaded rods by rotation of the threaded rods.

57. 发明专利

DE19704454A1 Surface micro-mechanical structure production 未知
公开(公告)号：DE19704454A1
公开(公告)日：1998-08-20
申请号：DE19704454
申请日：1997-02-06
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , LAERMER FRANZ DR , OFFENBERG MICHAEL DR , SCHILP ANDREA
IPC分类号： B81C1/00 , H01L21/306 , C23F4/00 , H01L49/00 , H01L21/311 , H01L21/308
摘要： In the production of surface micro-mechanical structures by depositing and structuring a sacrificial layer on a heatable silicon substrate, depositing and structuring a second layer on the sacrificial layer and then removing the sacrificial layer by vapour phase etching, the partial pressure composition of the etching medium vapour is used to adjust the temperature difference between the substrate and the etching medium vapour. Preferably, the etching medium is formed by evaporation of an azeotropic hydrofluoric acid/water mixture and its partial pressure composition is adjusted by means of its temperature and/or component composition. The temperature difference is preferably 10-30 (especially 20) deg K and the substrate temperature is preferably 333-373 (especially 353) deg K.

58. 发明专利

DE50015718D1 未知
公开(公告)号：DE50015718D1
公开(公告)日：2009-10-01
申请号：DE50015718
申请日：2000-03-13
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , LAERMER FRANZ , SCHILP ANDREA
IPC分类号： H01L21/66 , B81C99/00 , H01L21/02
摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.

59. 发明专利

DE102007016135A1 Method for structuring substrate material, involves arranging mask structure on main surface of substrate material in two substrate areas, and mask structure is removed above substrate area during short time interval 未知
公开(公告)号：DE102007016135A1
公开(公告)日：2008-10-09
申请号：DE102007016135
申请日：2007-03-29
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER
IPC分类号： B81C1/00 , B81B1/00 , H01L21/02 , H01L21/301 , H01L21/308
摘要： The method involves arranging a mask structure (2) on a main surface of the substrate material in two substrate areas (8,9). The mask structure is removed above the substrate area (8) during a short time interval and the mask structure is removed above another substrate area (9) during another large time interval. The substrate material (1) is removed partially in connection to the former time interval in the substrate area and the substrate material is removed partially in connection to the later time interval in another substrate area. An independent claim is also included for a micromechanical component.

60. 发明专利

DE102005003418A1 未知
公开(公告)号：DE102005003418A1
公开(公告)日：2006-06-14
申请号：DE102005003418
申请日：2005-01-25
申请人： BOSCH GMBH ROBERT
发明人： BECKER VOLKER , VOGT LOTHAR
IPC分类号： G11B33/02

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