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51. 发明授权

US07141765B2 Heat treating device 有权
标题翻译：热处理装置
公开(公告)号：US07141765B2
公开(公告)日：2006-11-28
申请号：US10473248
申请日：2002-03-20
申请人： Toshiyuki Makiya , Takanori Saito , Karuki Eickmann , Sanjeev Kaushal , Anthony Dip , David L. O'meara
发明人： Toshiyuki Makiya , Takanori Saito , Karuki Eickmann , Sanjeev Kaushal , Anthony Dip , David L. O'meara
IPC分类号： H05B1/02 , A21B1/00
CPC分类号： G01K7/04 , G01K1/20
摘要： A antireflective film 50 is formed on a thermocouple 42 arranged in a processing vessel 1 of a heat treatment apparatus in order to improve the transient response characteristics of the thermocouple 42. In a typical embodiment, the thermocouple 42 is made by connecting a platinum wire 43A and a platinum-rhodium alloy wire 43B, and the antireflective film 50 is composed by stacking a silicon nitride layer 50C, silicon layer 50B and a silicon nitride layer 50A in that order.
摘要翻译：为了改善热电偶42的瞬态响应特性，在设置在热处理装置的处理容器1中的热电偶42上形成防反射膜50。在一个典型的实施例中，热电偶42是通过连接铂线43A和铂 - 铑合金线43B制成的，并且抗反射膜50由叠氮化硅层50C，硅层50B和硅氮化物层50A。

52. 发明申请

US20050056219A1 Formation of a metal-containing film by sequential gas exposure in a batch type processing system 审中-公开
标题翻译：在间歇式处理系统中通过连续气体暴露形成含金属膜
公开(公告)号：US20050056219A1
公开(公告)日：2005-03-17
申请号：US10662522
申请日：2003-09-16
申请人： Anthony Dip , Michael Toeller , Kimberly Reid
发明人： Anthony Dip , Michael Toeller , Kimberly Reid
IPC分类号： C23C16/00 , C23C16/30 , C23C16/40 , H01L20060101
CPC分类号： C23C16/45531 , C23C16/308 , C23C16/401 , C23C16/405 , C23C16/45546
摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.
摘要翻译：提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜，例如HfxSiyOzNw和ZrxSiyOzNw。提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

53. 发明授权

US06799940B2 Removable semiconductor wafer susceptor 失效
标题翻译：可移动半导体晶圆基座
公开(公告)号：US06799940B2
公开(公告)日：2004-10-05
申请号：US10310141
申请日：2002-12-05
申请人： Raymond Joe , Anthony Dip
发明人： Raymond Joe , Anthony Dip
IPC分类号： B65G4907
CPC分类号： H01L21/68735 , H01L21/67109 , H01L21/67309 , H01L21/67346 , Y10S414/135 , Y10S414/137
摘要： A removable semiconductor wafer susceptor used for supporting a substrate during batch processing. The susceptor includes a flat circular central plane with a predetermined outer diameter. The susceptor is sized to fit within an inner diameter formed from wafer support ledges of a wafer transport container. The susceptor includes edges that are chamfered and rounded to lessen stress concentration at the edges. The susceptor is transported through processing by a sieving action of transport automation.
摘要翻译：用于在批量处理期间支撑基板的可移除的半导体晶片基座。基座包括具有预定外径的平圆形中心平面。基座的尺寸设计成适合于由晶片运输容器的晶片支撑壁架形成的内径。基座包括倒角和倒圆的边缘，以减少边缘处的应力集中。感受器通过运输自动化的筛选动作运输。

54. 发明授权

US08673725B2 Multilayer sidewall spacer for seam protection of a patterned structure 有权
标题翻译：用于图案结构的接缝保护的多层侧壁间隔件
公开(公告)号：US08673725B2
公开(公告)日：2014-03-18
申请号：US12751926
申请日：2010-03-31
申请人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A Conti
发明人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A Conti
IPC分类号： H01L29/78
CPC分类号： H01L21/28247 , H01L29/6656
摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.
摘要翻译：描述了具有多层侧壁间隔件和形成方法的半导体器件。在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。

55. 发明授权

US07816278B2 In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition 有权
标题翻译：使用原子层沉积和化学气相沉积的高介电常数膜的原位杂化沉积
公开(公告)号：US07816278B2
公开(公告)日：2010-10-19
申请号：US12058470
申请日：2008-03-28
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/33
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , C23C16/44 , C23C16/45546 , C23C16/56 , H01L21/02181 , H01L21/02271 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3144 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.
摘要翻译：一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

56. 发明授权

US07659214B2 Method for growing an oxynitride film on a substrate 失效
标题翻译：在基板上生长氮氧化物膜的方法
公开(公告)号：US07659214B2
公开(公告)日：2010-02-09
申请号：US11865060
申请日：2007-09-30
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316
CPC分类号： H01L21/3145 , C23C8/34 , H01L21/28202 , H01L29/518
摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first wet process gas to grow an oxide film on the substrate. The method further includes flowing a second wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber, and reacting the oxide film and the substrate with the second wet process gas to grow an oxynitride film. In another embodiment, the method further comprises annealing the substrate containing the oxynitride film in an annealing gas. According to one embodiment of the method where the substrate is silicon, a silicon oxynitride film can be formed that exhibits a nitrogen peak concentration of approximately 3 atomic % or greater.
摘要翻译：在衬底上生长氮氧化物膜的方法包括将衬底定位在处理室中，加热处理室，将包含水蒸气的第一湿法工艺气体流入处理室，以及使衬底与第一湿法工艺气体反应生长在基板上的氧化物膜。所述方法还包括将包含水蒸气的第二湿法工艺气体和包含一氧化氮的氮化气体流入所述处理室，以及使所述氧化物膜和所述衬底与所述第二湿法工艺气体反应以生长氧氮化物膜。在另一个实施方案中，该方法还包括在退火气体中退火含有氧氮化物膜的基材。根据基板是硅的方法的一个实施例，可以形成显示大约3原子％以上的氮峰浓度的氮氧化硅膜。

57. 发明申请

US20090324828A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20090324828A1
公开(公告)日：2009-12-31
申请号：US12491313
申请日：2009-06-25
申请人： HITOSHI KATO , Manabu Honma , Anthony Dip
发明人： HITOSHI KATO , Manabu Honma , Anthony Dip
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/402 , C23C16/45521 , C23C16/45551
摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.
摘要翻译：公开的薄膜沉积设备包括：转盘，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

58. 发明授权

US07635655B2 Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing 失效
标题翻译：用氧化亚氮氧化法替代一氧化二氮的氧化工艺用于衬底加工的方法
公开(公告)号：US07635655B2
公开(公告)日：2009-12-22
申请号：US11278054
申请日：2006-03-30
申请人： Anthony Dip
发明人： Anthony Dip
IPC分类号： H01L21/31
CPC分类号： H01L21/3143 , H01L21/0223 , H01L21/02233 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31658 , H01L21/31662
摘要： A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N2O that thermally decomposes in a process chamber of the batch processing system to N2, O2, and NO byproducts, and generating a replacement NO-based oxidation process for the substrates including a second process gas containing N2, O2, and NO with molar concentrations that mimic that of the N2, O2, and NO byproducts in the N2O-based oxidation process. According to another embodiment of the invention, the NO-based oxidation process contains NO, O2, and an inert gas.
摘要翻译：一种在批处理系统中对多个基板进行氧化处理的方法。根据一个实施方案，该方法包括选择用于基材的基于N2O的氧化方法，其包括含有在分批处理系统的处理室中热分解为N 2，O 2和NO副产物的N 2 O的第一工艺气体，用于底物的基于NO的氧化方法，包括含有N 2，O 2和NO的第二工艺气体，其摩尔浓度模拟N 2 O基氧化过程中的N 2，O 2和NO副产物的摩尔浓度。根据本发明的另一个实施方案，NO基氧化法含有NO，O 2和惰性气体。

59. 发明授权

US07604841B2 Method for extending time between chamber cleaning processes 有权
标题翻译：在室清洁过程之间延长时间的方法
公开(公告)号：US07604841B2
公开(公告)日：2009-10-20
申请号：US10814713
申请日：2004-03-31
申请人： Raymond Joe , John Gumpher , Anthony Dip
发明人： Raymond Joe , John Gumpher , Anthony Dip
IPC分类号： C23C16/30
CPC分类号： C23C16/4404 , H01L21/3185
摘要： A method for extending time between chamber cleaning processes in a process chamber of a processing system. A particle-reducing film is formed on a chamber component in the process chamber to reduce particle formation in the process chamber during substrate processing, at least one substrate is introduced into the process chamber, a manufacturing process is performed in the process chamber, and the at least one substrate is removed from the process chamber. The particle-reducing film may be deposited on a clean chamber component or on a material deposit formed on a chamber component. Alternatively, the particle-reducing film may be formed by chemically modifying at least a portion of a material deposit on a chamber component. The particle-reducing film may be formed after each manufacturing process or at selected intervals after multiple manufacturing processes.
摘要翻译：一种用于在处理系统的处理室中延长室清洁过程之间的时间的方法。在处理室中的腔室部件上形成颗粒减少膜，以减少衬底处理期间处理室中的颗粒形成，至少一个衬底被引入到处理室中，在处理室中执行制造工艺，从处理室移除至少一个基板。颗粒减少膜可以沉积在清洁室部件上或者形成在室部件上的材料沉积物上。或者，可以通过化学改变室内部件上的材料沉积物的至少一部分来形成颗粒减少膜。减少颗粒的膜可以在每个制造过程之后形成，或者在多个制造过程之后以选定的间隔形成。

60. 发明申请

US20090246971A1 IN-SITU HYBRID DEPOSITION OF HIGH DIELECTRIC CONSTANT FILMS USING ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION 有权
标题翻译：使用原子层沉积和化学气相沉积的高介电常数膜的现场混合沉积
公开(公告)号：US20090246971A1
公开(公告)日：2009-10-01
申请号：US12058470
申请日：2008-03-28
申请人： Kimberly G. Reid , Anthony Dip
发明人： Kimberly G. Reid , Anthony Dip
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/02 , C23C16/405 , C23C16/44 , C23C16/45546 , C23C16/56 , H01L21/02181 , H01L21/02271 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3144 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645
摘要： An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.
摘要翻译：一种用于在批量处理系统中在多个基板上形成高k电介质膜的原位复合膜沉积方法。该方法包括将多个基板装载到批处理系统的处理室中，在沉积第一部分之后，通过原子层沉积（ALD）沉积高k电介质膜的第一部分，在沉积第一部分之后，并且不存在从所述处理室中移除所述多个基板，通过化学气相沉积（CVD）将所述高k电介质膜的第二部分沉积在所述第一部分上，以及从所述处理室中移除所述多个基板。该方法还可以包括交替重复第一和第二部分的沉积，直到高k电介质膜具有期望的厚度。该方法还可以进一步包括预处理基片并在去除之前对其原位进行后处理。

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