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51. 发明授权

US08991673B2 Substrate cutting device and method 有权
标题翻译：基板切割装置及方法
公开(公告)号：US08991673B2
公开(公告)日：2015-03-31
申请号：US13293772
申请日：2011-11-10
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B26F3/00 , H01L21/762 , B28D5/00 , H01L21/20
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构使材料定位，使得切割机构沿着弱化区域从源基板分离出层。该切割装置还包括一个控制机构，用于在分离该层期间调节组件的至少两个不同部分，以便于更精确的拆卸。

52. 发明申请

US20080258265A1 METHODS FOR FORMING AN ASSEMBLY FOR TRANSFER OF A USEFUL LAYER 有权
标题翻译：用于形成组合以传递有用层的方法
公开(公告)号：US20080258265A1
公开(公告)日：2008-10-23
申请号：US12144282
申请日：2008-06-23
申请人： Fabrice Letertre , Olivier Rayssac
发明人： Fabrice Letertre , Olivier Rayssac
IPC分类号： B29C63/00 , H01L29/06
CPC分类号： H01L21/76254 , H01L21/76259 , Y10S156/922 , Y10S438/977 , Y10T156/1064 , Y10T156/108 , Y10T156/11 , Y10T156/1168 , Y10T156/1189 , Y10T156/1989 , Y10T156/1994
摘要： Methods for transferring of a useful layer from a support are described. In an embodiment, the method includes for facilitating transfer of a useful layer from a support by providing an interface in a first support to define a useful layer; and forming a peripheral recess on the first support below the interface so that the periphery of the interface is exposed to facilitate removal and transfer of the useful layer. An epitaxial layer can be formed on the useful layer after forming the recess, with the width and depth of the recess being sufficient to accommodate the volume of residual material resulting from formation of the epitaxial layer without covering the periphery of the interface. Alternatively, an epitaxial layer can be formed on the useful layer after forming the recess, wherein the peripheral recess is configured for receiving sufficient residual material from the epitaxial layer to prevent bonding between the residual material and the useful layer.
摘要翻译：描述了用于从载体转移有用层的方法。在一个实施例中，该方法包括：通过在第一支撑件中提供界面以便限定有用层，从而便于从支撑体传递有用层; 以及在所述界面下方的所述第一支撑件上形成周边凹部，使得所述界面的外围被暴露以便于所述有用层的移除和转移。在形成凹槽之后，可以在有用层上形成外延层，其中凹槽的宽度和深度足以适应由形成外延层而不覆盖界面的周边而产生的剩余材料的体积。或者，可以在形成凹部之后在有用层上形成外延层，其中周边凹槽被配置为从外延层接收足够的残余材料，以防止残留材料和有用层之间的结合。

53. 发明申请

US20060270187A1 Transfer method with a treatment of a surface to be bonded 有权
公开(公告)号：US20060270187A1
公开(公告)日：2006-11-30
申请号：US11138926
申请日：2005-05-25
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.

54. 发明申请

US20050009297A1 Device and method for cutting an assembly 有权
标题翻译：用于切割装配体的装置和方法
公开(公告)号：US20050009297A1
公开(公告)日：2005-01-13
申请号：US10886436
申请日：2004-07-06
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B28D5/04 , B28D5/00 , H01L21/20 , H01L21/762 , G01N13/00 , H01L21/30 , H01L21/46
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , H01L21/76254 , Y10T83/364 , Y10T156/1126 , Y10T156/1184 , Y10T156/1928 , Y10T156/1967 , Y10T156/1972
摘要： A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.
摘要翻译：提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区第一表面和第二表面之一。该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

55. 发明申请

US20050000649A1 Substrate cutting device and method 有权
标题翻译：基板切割装置及方法
公开(公告)号：US20050000649A1
公开(公告)日：2005-01-06
申请号：US10883435
申请日：2004-07-01
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B28D1/22 , B28D5/00 , H01L21/20 , H01L21/762 , B32B35/00
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。切割装置还包括一个控制机构，用于在分离该层期间调节该组件的至少两个不同部分，以便于更精确的拆卸。

56. 发明授权

US07741678B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07741678B2
公开(公告)日：2010-06-22
申请号：US12139599
申请日：2008-06-16
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/01 , H01L21/44
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

57. 发明授权

US07601611B2 Method of fabricating a semiconductor hetero-structure 有权
标题翻译：制造半导体异质结构的方法
公开(公告)号：US07601611B2
公开(公告)日：2009-10-13
申请号：US11147575
申请日：2005-06-07
申请人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
发明人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a predetermined heat treatment carrying out at least one strengthening step on a bonding interface between the thin layer and the support. The thickness of the thin layer is selected as a function of the difference between the coefficients of thermal expansion of the first and second materials and as a function of parameters of predetermined heat treatment, such that the stresses exerted by the heat treatment on the assembly of the support and the transferred thin layer leaves the assembly intact. The method further includes depositing an additional thickness of the second material in the monocrystalline state on the thin layer to thicken it. The method is useful for fabrication of hetero-substrates with a relatively thick useful layer.
摘要翻译：一种制造包括用于微电子学，光电子学或光学学中的至少一种半导体材料的结构的方法。该方法包括将由第一材料制成的支撑体转移到与第一材料不同的第二材料制成的薄单晶层上，并且进行至少一个加强步骤的预定热处理，该加强步骤在薄的层和支持。选择薄层的厚度作为第一和第二材料的热膨胀系数之间的差异的函数，并且作为预定热处理的参数的函数，使得通过热处理施加在组件上的应力支撑和转移的薄层离开组件完好无损。该方法还包括在薄层上沉积单晶状态的第二材料的附加厚度以使其变稠。该方法可用于制造具有相对厚的有用层的异质衬底。

58. 发明申请

US20080248251A1 SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20080248251A1
公开(公告)日：2008-10-09
申请号：US12139599
申请日：2008-06-16
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： B32B3/00
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

59. 发明申请

US20060189095A1 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20060189095A1
公开(公告)日：2006-08-24
申请号：US11402052
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30 , H01L21/425
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

60. 发明授权

US06964914B2 Method of manufacturing a free-standing substrate made of monocrystalline semi-conductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US06964914B2
公开(公告)日：2005-11-15
申请号：US10349295
申请日：2003-01-22
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： C30B29/38 , C23C16/01 , C23C16/34 , C30B25/02 , C30B29/04 , H01L21/20 , H01L21/762 , H01L21/30 , H01L21/46 , H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

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