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    • 53. 发明申请
    • Patterned glass cylindrical lens arrays for concentrated photovoltaic systems, and/or methods of making the same
    • 用于集中光伏系统的图案化玻璃柱面透镜阵列和/或制造它们的方法
    • US20110259394A1
    • 2011-10-27
    • US12662624
    • 2010-04-26
    • Alexey KrasnovWillem den Boer
    • Alexey KrasnovWillem den Boer
    • H01L31/052
    • G02B3/0062C03B18/14F24S23/31G02B3/005G02B3/0056H01L31/0521H01L31/0543H01L31/0547Y02B10/20Y02E10/52
    • Certain example embodiments of this invention relate to patterned glass that can be used as a cylindrical lens array in a concentrated photovoltaic application, and/or methods of making the same. In certain example embodiments, the lens arrays may be used in combination with strip solar cells and/or single-axis tracking systems. That is, in certain example embodiments, lenses in the lens array may be arranged so as to concentrate incident light onto respective strip solar cells, and the entire assembly may be connected to a single-axis tracking system that is programmed to follow the East-West movement of the sun. A low-iron glass may be used in connection with certain example embodiments. Such techniques may advantageously help to reduce cost per watt related, in part, to the potentially reduced amount of semiconductor material to be used for such example embodiments.
    • 本发明的某些示例性实施例涉及可用作集中光伏应用中的柱面透镜阵列的图案化玻璃,和/或其制造方法。 在某些示例性实施例中,透镜阵列可以与带状太阳能电池和/或单轴跟踪系统组合使用。 也就是说,在某些示例性实施例中,透镜阵列中的透镜可以被布置成将入射光集中到相应的带状太阳能电池上,并且整个组件可以连接到单轴跟踪系统,该单轴跟踪系统被编程为跟随东 - 太阳的西运动。 结合某些示例性实施例可以使用低铁玻璃。 这样的技术可以有利地有助于降低成本/瓦特,部分地涉及用于这些示例性实施例的可能减少量的半导体材料。
    • 54. 发明授权
    • Method of making front electrode of photovoltaic device having etched surface and corresponding photovoltaic device
    • 制造具有蚀刻表面的光电器件的前电极和相应的光伏器件的方法
    • US08022291B2
    • 2011-09-20
    • US12285890
    • 2008-10-15
    • Scott V. ThomsenYiwei LuAlexey Krasnov
    • Scott V. ThomsenYiwei LuAlexey Krasnov
    • H01L31/00H01L21/00C23C14/00
    • H01L31/1884H01L31/022466H01L31/0236Y02E10/50
    • Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s). After the etching, most or all of the better quality ceramic-deposited TCO remains whereas much of the lesser quality metallic-deposited TCO of the film was removed during the etching process.
    • 本发明的某些示例性实施例涉及包括诸如前电极/触点的电极的光伏(PV)装置及其制造方法。 在某些示例性实施例中,前电极具有面向PV器件的光电半导体膜的有纹理(例如蚀刻)的表面。 前电极具有透明导电氧化物(TCO)膜,其具有相同材料(例如氧化锌,氧化锌铝,氧化铟锡或氧化锡)的第一和第二层(连续或不连续),其中第一 使用陶瓷溅射靶溅射沉积TCO层,并且使用金属或基本上金属的溅射靶溅射沉积相同材料的第二TCO层。 这允许通过使用陶瓷靶材形成的通过陶瓷靶材更缓慢地沉积的膜的更好的TCO,并且通过金属靶材(s)更快速且成本有效地沉积的膜的质量较差的TCO )。 在蚀刻之后,大部分或全部较好质量的陶瓷沉积的TCO保留,而在蚀刻过程中除去较薄质量的金属沉积的TCO。
    • 55. 发明申请
    • High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same
    • 包括用于太阳能电池的离子束处理层的高雾度透明接触和/或其制造方法
    • US20110100446A1
    • 2011-05-05
    • US12591061
    • 2009-11-05
    • Alexey Krasnov
    • Alexey Krasnov
    • H01L31/0232C23C14/34
    • H01L31/022466C23C14/086C23C14/5806C23C14/5853H01L31/022475H01L31/022483H01L31/02366H01L31/1884Y02E10/50
    • Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
    • 本发明的一些示例性实施例涉及用于太阳能电池器件(例如,非晶硅或a-Si太阳能电池器件)的前透明导电电极和/或其制造方法。 有利地,某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。 在某些示例性实施例中,包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。 提供了插入层,其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。 在某些示例性实施例中,ITO层可以进行离子束处理以使其表面变粗糙。 与不提供插入层的情况相比,离子束处理可以进行足以改变AZO层的结晶生长的电压。
    • 56. 发明申请
    • High haze transparent contact including insertion layer for solar cells, and/or method of making the same
    • 包括太阳能电池用插入层的高雾度透明接触和/或其制造方法
    • US20110100445A1
    • 2011-05-05
    • US12591060
    • 2009-11-05
    • Alexey Krasnov
    • Alexey Krasnov
    • H01L31/02H01L31/028C23C14/34
    • C23C14/5853C23C14/086C23C14/5806H01L31/022466H01L31/022475H01L31/022483H01L31/1884Y02E10/50
    • Certain example embodiments of this invention relate to a front transparent conductive electrode for solar cell devices (e.g., amorphous silicon or a-Si solar cell devices), and/or methods of making the same. Advantageously, certain example embodiments enable high haze to be realized in the top layer of the thin film stack. In certain example embodiments, an insertion layer comprising ITO or AZO is provided between a layer of AZO and a layer of ITO. The AZO may be deposited at room temperature. The insertion layer is provided with an oxygen content selected so that the insertion layer sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided. In certain example embodiments, the layer of ITO may be ion-beam treated so as to roughen a surface thereof. The ion beam treating may be performed a voltage sufficient to alter the crystalline growth of the layer of AZO compared to a situation where no insertion layer is provided.
    • 本发明的一些示例性实施例涉及用于太阳能电池器件(例如,非晶硅或a-Si太阳能电池器件)的前透明导电电极和/或其制造方法。 有利地,某些示例性实施例使得能够在薄膜堆叠的顶层中实现高雾度。 在某些示例性实施例中,包括ITO或AZO的插入层设置在AZO层和ITO层之间。 AZO可以在室温下沉积。 提供了插入层,其选择的氧含量使得插入层足以改变与没有设置插入层的情况相比AZO层的结晶生长。 在某些示例性实施例中,ITO层可以进行离子束处理以使其表面变粗糙。 与不提供插入层的情况相比,离子束处理可以进行足以改变AZO层的结晶生长的电压。