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51. 发明申请

US20070138815A1 PEDESTRIAN PROTECTION APPARATUS FOR VEHICLE 审中-公开
标题翻译： PEDESTRIAN保护装置
公开(公告)号：US20070138815A1
公开(公告)日：2007-06-21
申请号：US11564377
申请日：2006-11-29
申请人： Masanobu FUKUKAWA , Yoshihiro Ogura , Kaoru Ito , Kuniaki Hasegawa , Hiroki Kurokawa , Yoshiyuki Yamamoto , Naoki Goda
发明人： Masanobu FUKUKAWA , Yoshihiro Ogura , Kaoru Ito , Kuniaki Hasegawa , Hiroki Kurokawa , Yoshiyuki Yamamoto , Naoki Goda
IPC分类号： B60R19/00
CPC分类号： B60R19/18 , B60R19/12 , B60R21/34 , B60R2019/184 , B60R2021/0053
摘要： A pedestrian protection apparatus for a vehicle, including a plate member which is disposed at a front face of the vehicle, which includes front and rear portions, and which is fixed at the rear portion to the vehicle with at least a leading end part of the front portion protruded from the front face of the vehicle, the apparatus being arranged to sweep a leg portion of a pedestrian, thereby protecting the leg portion, wherein the leading end part includes at least one horizontally extending portion and a plurality of vertically extending portions each having an anterior surface substantially orthogonal to a horizontal plane, the horizontally extending portion and the vertically extending portions being formed integrally with the leading end part so as to be alternately disposed in the frontward and backward direction of the vehicle and extend in a staircase-like form.
摘要翻译：一种用于车辆的行人保护装置，包括设置在车辆前表面的板构件，其包括前部和后部，并且其后部至少固定在车辆的前端部分前部从车辆的前表面突出，该装置被布置为扫掠行人的腿部部分，从而保护腿部，其中前端部分包括至少一个水平延伸部分和多个垂直延伸部分具有与水平面大致正交的前表面，水平延伸部分和垂直延伸部分与前端部一体地形成，以便交替地设置在车辆的前后方向上并且以阶梯状延伸形成。

52. 发明授权

US07018866B2 Circuit component built-in module with embedded semiconductor chip and method of manufacturing 失效
标题翻译：具有嵌入式半导体芯片的电路元件内置模块及其制造方法
公开(公告)号：US07018866B2
公开(公告)日：2006-03-28
申请号：US10753933
申请日：2004-01-07
申请人： Yasuhiro Sugaya , Toshiyuki Asahi , Shingo Komatsu , Yoshiyuki Yamamoto , Seiichi Nakatani , Satoru Yuhaku , Kazuo Ohtani
发明人： Yasuhiro Sugaya , Toshiyuki Asahi , Shingo Komatsu , Yoshiyuki Yamamoto , Seiichi Nakatani , Satoru Yuhaku , Kazuo Ohtani
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H05K1/187 , H01L21/56 , H01L21/563 , H01L21/568 , H01L23/49822 , H01L23/49833 , H01L23/5385 , H01L23/5389 , H01L24/29 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2224/04105 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/73204 , H01L2224/73267 , H01L2224/81001 , H01L2224/81801 , H01L2224/83101 , H01L2224/83856 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06582 , H01L2225/06589 , H01L2225/06596 , H01L2225/1035 , H01L2225/1058 , H01L2225/107 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/1517 , H01L2924/15787 , H01L2924/1627 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2924/01083 , H01L2924/3512 , H01L2924/00014
摘要： A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 μm and not more than 100 μm, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 μm and not more than 200 μm. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.
摘要翻译：电路部件内置模块包括：由含有无机填料和热固性树脂的混合物制成的第一电绝缘基板; 至少形成在所述第一电绝缘基板的主表面上的多个布线图案; 结合在第一电绝缘基板中并与布线图形电连接的半导体芯片; 以及将所述多个布线图案彼此电连接的内部通孔，所述内部通孔穿过所述第一电绝缘基板。在电路部件内置模块中，半导体芯片的厚度为30μm以上且100μm以下，具有非接线表面接地，电路部件内置模块的厚度为范围不小于80μm，不大于200μm。利用这种配置，提供了以高密度安装电路部件的高性能和紧凑型电路部件内置模块，以便适用于各种类型的电子信息装置。

53. 发明授权

US06483040B2 Package and method of manufacturing the same 失效
标题翻译：包装和制造方法相同
公开(公告)号：US06483040B2
公开(公告)日：2002-11-19
申请号：US09789581
申请日：2001-02-22
申请人： Satoshi Ooe , Yoshiyuki Yamamoto
发明人： Satoshi Ooe , Yoshiyuki Yamamoto
IPC分类号： H05K103
CPC分类号： H01L23/36 , H01L23/3732 , H01L23/49861 , H01L2924/0002 , Y10T428/24917 , Y10T428/30 , H01L2924/00
摘要： The present invention provides a package whose heat dissipation performance by a semiconductor device has been improved, which synchronizes with the rapid development of high transmission density in multiplex communications. In place of the conventional package substrate, a substrate formed by a combination of two or more kinds of materials is used, whereby the temperature of a portion at which the temperature tends to rise to become extremely high within the package is selectively dissipated, whereby the heat dissipation performance of the package is efficiently improved. A diamond coated substrate or diamond substrate is used at a portion with an extremely high temperature for dissipating the heat.
摘要翻译：本发明提供了一种通过半导体器件的散热性能得到改善的封装，与多路通信中的高传输密度的快速发展同步。代替常规的封装基板，使用通过两种或更多种材料的组合形成的基板，由此在封装件内温度趋于上升至非常高的部分的温度被选择性地消散，由此，有效地提高了包装的散热性能。在极高温度的部分使用金刚石涂覆的基底或金刚石基底来散热。

54. 发明授权

US5878110A X-ray generation apparatus 失效
标题翻译： X射线发生装置
公开(公告)号：US5878110A
公开(公告)日：1999-03-02
申请号：US907883
申请日：1997-08-11
申请人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
发明人： Yoshiyuki Yamamoto , Keiichiro Tanabe , Naoji Fujimori , Nobuhiro Ota
IPC分类号： H01J35/08 , H05G1/00
CPC分类号： H01J35/08 , H01J2235/087 , H01J2235/122 , H01J2235/1262
摘要： An X-ray generation apparatus has an anticathode which includes a high thermal conductive substrate and a target for generating X-rays by irradiation with electrons. The target penetrates the high heat conductive substrate. Improved cooling efficiency and durability of the anticathode is obtained as well as miniaturization and simplification of the X-ray generation apparatus is achieved.
摘要翻译： X射线产生装置具有抗热阴极，其包括高导热性基板和通过照射电子而产生X射线的靶。目标穿透高导热基板。获得了改善的抗阴茎的冷却效率和耐久性，并且实现了X射线产生装置的小型化和简化。

55. 发明授权

US4751272A Process for producing oxymethylene copolymer and resinous composition 失效
标题翻译：生产甲醛共聚物和树脂组合物的方法
公开(公告)号：US4751272A
公开(公告)日：1988-06-14
申请号：US43144
申请日：1987-04-27
申请人： Sigeru Okita , Yoshiyuki Yamamoto , Toshihiro Hatsu
发明人： Sigeru Okita , Yoshiyuki Yamamoto , Toshihiro Hatsu
IPC分类号： C08G2/06 , C08G2/10 , C08G2/22 , C08G2/30 , C08L59/00 , C08L77/00 , C08G2/28
CPC分类号： C08G2/30 , C08G2/06 , C08G2/10 , C08G2/22 , C08L59/00 , C08L77/00
摘要： A process for producing an oxymethylene copolymer, comprising the steps of polymerizing trioxane and cyclic ether in the presence of a boron trifluoride catalyst, adding a hindered amine compound to the polymer obtained by said polymerization, and stabilizing instable chain ends of the polymer. The oxymethylene copolymer thus obtained provides excellent heat resistance and superior mechanical properties.
摘要翻译：一种甲醛共聚物的制造方法，其特征在于，在三氟化硼催化剂的存在下，使三恶烷和环状醚聚合，在由所述聚合得到的聚合物中加入受阻胺化合物，稳定所述聚合物的不稳定链端。由此获得的甲醛共聚物具有优异的耐热性和优异的机械性能。

56. 发明授权

US08363326B2 AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens 失效
标题翻译： Al x Ga（1-x）N单晶，Al x Ga（1-x）N单晶的制造方法，光学透镜
公开(公告)号：US08363326B2
公开(公告)日：2013-01-29
申请号：US13001723
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： G02B1/02
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B3/00 , G02B13/143 , Y10T428/21 , Y10T428/24355
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译：制造本发明的Al x Ga（1-x）N（0

57. 发明申请

US20120228613A1 METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD 有权
标题翻译：制造半导体波形的方法以及用于该方法的复合基底和复合基板
公开(公告)号：US20120228613A1
公开(公告)日：2012-09-13
申请号：US13107286
申请日：2011-05-13
申请人： Yuki SEKI , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
发明人： Yuki SEKI , Issei Satoh , Koji Uematsu , Yoshiyuki Yamamoto
IPC分类号： H01L29/04 , B32B3/00 , H01L27/12 , H01L29/02 , H01L21/762 , H01L29/22
CPC分类号： H01L29/0684 , B32B2264/102 , B32B2307/704 , B32B2457/14 , H01L21/76254
摘要： A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device.
摘要翻译：本发明的制造半导体晶片的方法包括以下步骤：通过在基底上形成表面RMS粗糙度不大于1.0nm的基面平坦化层来获得复合基底; 通过将半导体晶体层附着到所述复合基底的所述基面平坦化层所在的一侧来获得复合基板; 在复合衬底的半导体晶体层上生长至少一个半导体层; 以及通过湿法蚀刻去除基底表面平坦化层，从而将半导体晶体层与基底分离，从而获得包括半导体晶体层和半导体层的半导体晶片。因此，提供一种制造半导体晶片的方法，而不管基底的类型如何，以及适用于该制造方法的复合基底和复合基底都能有效地制造半导体晶片，以有效地制造半导体器件。

58. 发明申请

US20110171462A1 Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal 失效
标题翻译：氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体
公开(公告)号：US20110171462A1
公开(公告)日：2011-07-14
申请号：US13060276
申请日：2010-01-20
申请人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C01B21/072 , C23C16/448 , C23C16/34 , C30B23/00 , B32B5/00
CPC分类号： C30B23/066 , C30B29/403
摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available.A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).
摘要翻译：使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用。氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。坩埚（101）内部设置有源材料（17）。加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112））沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

59. 发明授权

US07821795B2 Multilayer wiring board 有权
标题翻译：多层接线板
公开(公告)号：US07821795B2
公开(公告)日：2010-10-26
申请号：US11578039
申请日：2006-02-01
申请人： Yasuhiro Sugaya , Yoshiyuki Yamamoto , Toshiyuki Asahi , Katsumasa Miki , Masaaki Katsumata , Yoshiyuki Saitou , Takeshi Nakayama
发明人： Yasuhiro Sugaya , Yoshiyuki Yamamoto , Toshiyuki Asahi , Katsumasa Miki , Masaaki Katsumata , Yoshiyuki Saitou , Takeshi Nakayama
IPC分类号： H05K1/18
CPC分类号： H05K1/186 , H01L23/3128 , H01L23/49822 , H01L24/48 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H05K3/429 , H05K3/4623 , H05K2201/09536 , H05K2201/10015 , Y10T29/4913 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A multilayered substrate includes a plurality of circuit boards including a plurality of wiring layers including a grounding layer and a power layer, a solid electrolytic capacitor having an insulative oxide film layer, an electrolytic layer, and a conductor layer sequentially formed on one surface or both surfaces of a foil-like metal substrate, and a conductive substance passing through the circuit board across a thickness thereof. The solid electrolytic capacitor is disposed to be held between the plurality of circuit boards. The conductor layer is connected to a grounding electrode formed on the grounding layer, the foil-like metal substrate being connected to a power electrode formed on the power layer.
摘要翻译：多层基板包括多个电路板，包括具有接地层和功率层的多个布线层，具有绝缘氧化物膜层的固体电解电容器，电解质层和依次形成在一个表面上的导体层箔状金属基板的表面和穿过电路板的导电物质穿过其厚度。固体电解电容器设置成保持在多个电路板之间。导体层与形成在接地层上的接地电极连接，箔状金属基板与形成在电源层上的电力电极连接。

60. 发明申请

US20100143748A1 Method for Growing Aluminum Nitride Crystal, Process for Producing Aluminum Nitride Crystal, and Aluminum Nitride Crystal 有权
标题翻译：生产氮化铝晶体的方法，生产氮化铝晶体的方法和氮化铝晶体
公开(公告)号：US20100143748A1
公开(公告)日：2010-06-10
申请号：US12595957
申请日：2008-12-19
申请人： Keisuke Tanizaki , Naho Mizuhara , Michimasa Miyanaga , Hideaki Nakahata , Yoshiyuki Yamamoto
发明人： Keisuke Tanizaki , Naho Mizuhara , Michimasa Miyanaga , Hideaki Nakahata , Yoshiyuki Yamamoto
IPC分类号： B32B9/04 , C30B23/06
CPC分类号： C30B29/403 , C30B25/02 , H01L21/02378 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02658
摘要： Methods of growing and manufacturing aluminum nitride crystal, and aluminum nitride crystal produced by the methods. Preventing sublimation of the starting substrate allows aluminum nitride crystal of excellent crystallinity to be grown at improved growth rates. The aluminum nitride crystal growth method includes the following steps. Initially, a laminar baseplate is prepared, furnished with a starting substrate having a major surface and a back side, a first layer formed on the back side, and a second layer formed on the first layer. Aluminum nitride crystal is then grown onto the major surface of the starting substrate by vapor deposition. The first layer is made of a substance that at the temperatures at which the aluminum nitride crystal is grown is less liable to sublimate than the starting substrate. The second layer is made of a substance whose thermal conductivity is higher than that of the first layer.
摘要翻译：生产和制造氮化铝晶体的方法和通过这些方法生产的氮化铝晶体。防止起始衬底的升华允许以提高的生长速率生长具有优异结晶度的氮化铝晶体。氮化铝晶体生长方法包括以下步骤。首先，制备层状基板，配备有具有主表面和背面的起始衬底，在背面形成的第一层和形成在第一层上的第二层。然后通过气相沉积将氮化铝晶体生长到起始衬底的主表面上。第一层由在生长氮化铝晶体的温度下比起始衬底更不易升华的物质制成。第二层由导热率高于第一层的物质制成。

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