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51. 发明授权

US08283237B2 Fabrication of through-silicon vias on silicon wafers 有权
标题翻译：在硅晶片上制造通硅通孔
公开(公告)号：US08283237B2
公开(公告)日：2012-10-09
申请号：US12978129
申请日：2010-12-23
申请人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
发明人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
IPC分类号： H01L21/30 , H01L21/4763 , H01L21/44 , H01L21/31
CPC分类号： H01L24/13 , H01L21/02074 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/3065 , H01L21/31116 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/6835 , H01L21/68792 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76898 , H01L24/11 , H01L24/742 , H01L2221/68372 , H01L2221/68381 , H01L2224/11002 , H01L2224/11452 , H01L2224/1182 , H01L2224/13562 , H01L2224/1357 , H01L2224/13687 , H01L2224/742 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/351 , H01L2924/05042 , H01L2924/00
摘要： A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.
摘要翻译：通过硅通孔的制造方法包括通过使用其间的粘合剂层将硅板的前表面粘合到载体上来形成基板，以暴露硅板的背面。氮化硅钝化层沉积在衬底的硅板的暴露的背面上。在硅板中蚀刻多个通孔，通孔包括侧壁和底壁。金属导体沉积在通孔中以形成多个通硅通孔。

52. 发明申请

US20120208373A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20120208373A1
公开(公告)日：2012-08-16
申请号：US13455984
申请日：2012-04-25
申请人： DEENESH PADHI , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： DEENESH PADHI , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

53. 发明授权

US08227352B2 Amorphous carbon deposition method for improved stack defectivity 有权
标题翻译：无定形碳沉积方法，提高了堆叠缺陷率
公开(公告)号：US08227352B2
公开(公告)日：2012-07-24
申请号：US13093679
申请日：2011-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/308 , H01L21/32
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体碳层。

54. 发明申请

US20110136327A1 HIGH MOBILITY MONOLITHIC P-I-N DIODES 失效
标题翻译：高移动单晶P-I-N二极体
公开(公告)号：US20110136327A1
公开(公告)日：2011-06-09
申请号：US12824032
申请日：2010-06-25
申请人： Xinhai Han , Nagarajan Rajagopalan , Ji Ae Park , Bencherki Mebarki , Heung Lak Park , Bok Hoen Kim
发明人： Xinhai Han , Nagarajan Rajagopalan , Ji Ae Park , Bencherki Mebarki , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/329 , H01L21/203
CPC分类号： H01L21/0262 , H01L21/02532 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L29/66136 , H01L29/868
摘要： Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
摘要翻译：描述了在衬底上形成高电流密度垂直p-i-n二极管的方法。这些方法包括以下步骤：以含有IV族元素的前体和依次暴露于n型掺杂剂前体和p型掺杂剂前体的任一顺序同时组合。通过在流过含IV族元素的前体的同时减少或消除掺杂剂前体的流动，在n型和p型层之间沉积本征层。在沉积n型层，本征层和p型层期间，衬底可以驻留在相同的处理室中，并且衬底在相邻层的沉积之间不暴露于大气中。

55. 发明申请

US20110111604A1 PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY 审中-公开
标题翻译：等离子体表面处理，以防止浸渍图中的图案褶皱
公开(公告)号：US20110111604A1
公开(公告)日：2011-05-12
申请号：US13007963
申请日：2011-01-17
申请人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
发明人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
IPC分类号： H01L21/31
CPC分类号： G03F7/091 , G03F7/11
摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.
摘要翻译：本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

56. 发明申请

US20080178797A1 PROCESSING CHAMBER WITH HEATED CHAMBER LINER 有权
标题翻译：加热室加热室内衬
公开(公告)号：US20080178797A1
公开(公告)日：2008-07-31
申请号：US11668947
申请日：2007-01-30
申请人： MARK A. FODOR , Sophia M. Velastegui , Bok Hoen Kim , Dale R. DuBois
发明人： MARK A. FODOR , Sophia M. Velastegui , Bok Hoen Kim , Dale R. DuBois
IPC分类号： B05C11/00
CPC分类号： C23C16/46
摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.
摘要翻译：提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

57. 发明授权

US07399364B2 Hermetic cap layers formed on low-κ films by plasma enhanced chemical vapor deposition 有权
标题翻译：通过等离子体增强的化学气相沉积在低kappa膜上形成密封盖层
公开(公告)号：US07399364B2
公开(公告)日：2008-07-15
申请号：US11423586
申请日：2006-06-12
申请人： Vu Ngoc Tran Nguyen , Bok Hoen Kim , Kang Sub Yim
发明人： Vu Ngoc Tran Nguyen , Bok Hoen Kim , Kang Sub Yim
IPC分类号： C23C16/00 , C23C16/22 , C23C16/24 , C23C16/509 , C23C16/52 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76831 , H01L21/02164 , H01L21/02274 , H01L21/02315 , H01L21/0276 , H01L21/31612 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76829
摘要： A method of forming a cap layer over a dielecrtic layer on a substrate including forming a plasma from a process gas including oxygen and tetraethoxysilane, and depositing the cap layer on the dielectric layer, where the cap layer comprises a thickness of about 600 Å or less, and a compressive stress of about 200 MPa or more. Also, a method of forming a cap layer over a dielectric layer on a substrate including forming a process gas by flowing together about 200 mgm to about 8000 mgm of tetraethoxysilane, about 2000 to about 20000 sccm of oxygen (O2), and about 2000 sccm to about 20000 sccm of carrier gas, generating a plasma from the process gas, where one or more RF generators supply about 50 watts to about 100 watts of low frequency RF power to the plasma, and about 100 watts to about 600 watts of high frequency RF power to the plasma, and depositing the cap layer on the dielectric layer.
摘要翻译：一种在衬底上的薄层上形成覆盖层的方法，包括由包括氧和四乙氧基硅烷的工艺气体形成等离子体，以及将所述覆盖层沉积在所述电介质层上，其中所述覆盖层包含约600或更小的厚度，压缩应力为200MPa以上。另外，在衬底上的电介质层上形成覆盖层的方法，包括通过将约200mgm至约8000mgm的四乙氧基硅烷流动而形成工艺气体，约2000至约200sccm的氧（O 2） SUB>）和约2000sccm至约20000sccm的载气，从处理气体产生等离子体，其中一个或多个RF发生器为等离子体提供约50瓦到约100瓦的低频RF功率，并且约100 瓦特到等离子体的大约600瓦的高频RF功率，并且将覆盖层沉积在电介质层上。

58. 发明申请

US20080153311A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20080153311A1
公开(公告)日：2008-06-26
申请号：US12042829
申请日：2008-03-05
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

59. 发明授权

US07060638B2 Method of forming low dielectric constant porous films 有权
标题翻译：形成低介电常数多孔膜的方法
公开(公告)号：US07060638B2
公开(公告)日：2006-06-13
申请号：US10808231
申请日：2004-03-23
申请人： Son Van Nguyen , Hichem M'Saad , Bok Hoen Kim
发明人： Son Van Nguyen , Hichem M'Saad , Bok Hoen Kim
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02282 , H01L21/02343 , H01L21/31111 , H01L21/31695 , H01L21/7682
摘要： A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO2) and boron oxide (B2O3). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film.
摘要翻译：公开了一种用于电子器件的多孔绝缘膜，其通过去除可溶性纳米相致密剂而形成。通过化学气相沉积（CVD）或通过玻璃上的旋转（S.O.G.）制备其中分散有可溶性致孔剂的硅基电介质膜。优选的致孔剂的实例包括化合物，例如氧化锗（GeO 2 N 2）和氧化硼（B 2 O 3 O 3）。热水可用于湿法蚀刻膜的处理，从而除去致孔剂并提供多孔介电膜。为了进一步降低膜的介电常数，硅基电介质膜可以是碳掺杂的氧化硅。此外，可以通过电子束处理多孔电介质膜以增强膜的电气和机械性能。

60. 发明授权

US06413321B1 Method and apparatus for reducing particle contamination on wafer backside during CVD process 有权
标题翻译：用于在CVD工艺期间减少晶片背面上的颗粒污染的方法和装置
公开(公告)号：US06413321B1
公开(公告)日：2002-07-02
申请号：US09731601
申请日：2000-12-07
申请人： Bok Hoen Kim , Mario Dave Silvetti , Ameeta Madhava , Davood Khalili , Martin Seamons , Emanuele Cappello , Nam Le , Lloyd Berken
发明人： Bok Hoen Kim , Mario Dave Silvetti , Ameeta Madhava , Davood Khalili , Martin Seamons , Emanuele Cappello , Nam Le , Lloyd Berken
IPC分类号： C23C1600
CPC分类号： C23C16/4405 , C23C16/0209 , C23C16/4401 , C23C16/4404 , C23C16/4583
摘要： Backside particle contamination of semiconductor wafers subjected to chemical vapor deposition is significantly reduced by optimizing various process parameters, alone or in combination. A high quality oxide seasoning layer is deposited to improve adhesion and trapping of contaminants remaining after a prior chamber cleaning step. Second, wafer pre-heating reduces thermal stress on the wafer during physical contact between the wafer and heater. Third, the duration of the gas stabilization flow of thermally reactive process gas species prior to CVD reaction is reduced, thereby preventing side products produced during this stabilization flow from affecting the wafer backside. Fourth, the wafer heater is redesigned to minimize physical contact between the heater surface and the wafer backside. Redesign of the wafer heater may include providing only a few, small projections from the top wafer surface, and also may include providing a continuous circumferential rim supporting the edge of the wafer to interfere with the flow of process gases to the wafer backside during processing.
摘要翻译：经过化学气相沉积的半导体晶片的背面颗粒污染通过单独或组合优化各种工艺参数而显着降低。沉积高质量的氧化物调味剂层以改善在先前的室清洁步骤之后残留的污染物的粘附和捕获。其次，晶片预热在晶片和加热器之间的物理接触期间降低了晶片上的热应力。第三，CVD反应之前的热反应过程气体种类的气体稳定化流程的持续时间减少，从而防止在该稳定化流程期间产生的副产物影响晶片背面。第四，重新设计晶片加热器以最小化加热器表面和晶片背面之间的物理接触。晶片加热器的重新设计可以包括仅从顶部晶片表面提供几个小的突起，并且还可以包括提供支撑晶片边缘的连续圆周边缘，以干扰处理期间晶片背面的工艺气体流。

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