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51. 发明申请

WO2021003005A1 ISOLATOR APPARATUS AND METHOD FOR SUBSTRATE PROCESSING CHAMBERS 审中-公开
公开(公告)号：WO2021003005A1
公开(公告)日：2021-01-07
申请号：PCT/US2020/036801
申请日：2020-06-09
申请人： APPLIED MATERIALS, INC.
发明人： PATHAK, Nitin , BANSAL, Amit Kumar , NGUYEN, Tuan Anh , RUBIO, Thomas , RAMAMURTHI, Badri N. , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： C23C16/458 , C23C16/455 , C23C16/44 , C23C16/52
摘要： Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

52. 发明申请

WO2018057369A1 HEATER PEDESTAL ASSEMBLY FOR WIDE RANGE TEMPERATURE CONTROL 审中-公开
标题翻译：用于宽范围温度控制的加热器底座组件
公开(公告)号：WO2018057369A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/051373
申请日：2017-09-13
申请人： APPLIED MATERIALS, INC.
发明人： ALAYAVALLI, Kaushik , BALAKRISHNA, Ajit , BALUJA, Sanjeev , BANSAL, Amit Kumar , BUSCHE, Matthew James , ROCHA-ALVAREZ, Juan Carlos , SRINIVASAN, Swaminathan T. , ULAVI, Tejas , ZHOU, Jianhua
IPC分类号： H01L21/67 , H01L21/683
摘要： Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a resistive heater encapsulated within the substrate support, a hollow shaft coupled to a support member of the substrate support at a first end of the shaft, and a thermally conductive material disposed at an interface between the support member and the first end of the shaft.
摘要翻译：本公开的实施方式一般涉及半导体处理室，并且更具体地涉及用于半导体处理室的加热的支撑基座。在一个实施方式中，公开了一种基座组件，其包括基板支撑件，该基板支撑件包括介电材料并且具有用于接收基板的支撑表面，封装在基板支撑件内的电阻加热器，耦合到基板支撑件的支撑构件的中空轴，轴的第一端以及设置在支撑构件和轴的第一端之间的界面处的导热材料。

53. 发明申请

WO2017139011A2 UNIFORM WAFER TEMPERATURE ACHIEVEMENT IN UNSYMMETRIC CHAMBER ENVIRONMENT 审中-公开
标题翻译：非对称房间环境中均匀晶片温度的实现
公开(公告)号：WO2017139011A2
公开(公告)日：2017-08-17
申请号：PCT/US2016/065158
申请日：2016-12-06
申请人： APPLIED MATERIALS, INC.
发明人： HA, Sungwon , CONNORS, Paul , ZHOU, Jianhua , ROCHA-ALVAREZ, Juan Carlos , LEE, Kwangduk Douglas , DUAN, Ziqing , BRIGHT, Nicolas J. , BI, Feng
CPC分类号： C23C16/448 , C23C16/50 , H01J37/32724 , H01L21/67115 , H01L21/6719
摘要： The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.
摘要翻译：本公开总体上涉及一种用于处理室的辐射屏蔽，其改善了衬底温度的均匀性。辐射护罩可以布置在处理室的狭缝阀门和布置在处理室内的基板支撑件之间。在一些实施例中，辐射护罩可以设置在处理室的加热器下方。此外，辐射护罩可阻挡从处理室供应的辐射和/或热量，并且在一些实施例中，辐射护罩可吸收和/或反射辐射，从而提供改善的温度均匀性以及改善基板的平面轮廓。

54. 发明申请

WO2015119787A1 METHODS OF DIRECTING MAGNETIC FIELDS IN A PLASMA SOURCE, AND ASSOCIATED SYSTEMS 审中-公开
标题翻译：在等离子体源中引导磁场的方法和相关系统
公开(公告)号：WO2015119787A1
公开(公告)日：2015-08-13
申请号：PCT/US2015/012607
申请日：2015-01-23
申请人： APPLIED MATERIALS, INC.
发明人： YE, Zheng John , PINSON, Jay D., II , HANAWA, Hiroji , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： H01J37/3211 , H01J37/32458 , H01J37/32522 , H01J37/32669
摘要： A plasma source includes a plasma vessel that includes a dielectric material that encloses a cavity of a toroidal shape. The toroidal shape defines a toroidal axis therethrough. The vessel forms input and output connections, each of the input and output connections being in fluid communication with the cavity. One or more metal plates are disposed adjacent to the plasma vessel for cooling the plasma vessel. A magnetic core is disposed along the toroidal axis such that respective first and second ends of the magnetic core extend beyond axially opposed sides of the plasma vessel. First and second induction coils are wound about the respective first and second ends of the magnetic core. A plasma is generated in the cavity when an input gas is supplied through the input connection and an oscillating electrical current is supplied to the first and second induction coils.
摘要翻译：等离子体源包括等离子体容器，其包括围绕环形形状的空腔的电介质材料。环形形状限定了穿过其中的环形轴线。容器形成输入和输出连接，每个输入和输出连接与空腔流体连通。一个或多个金属板与等离子体容器相邻设置以冷却等离子体容器。磁芯沿着环形轴线设置，使得磁芯的相应的第一和第二端延伸超过等离子体容器的轴向相对的两侧。第一和第二感应线圈缠绕在磁芯的相应的第一和第二端。当通过输入连接提供输入气体并且向第一和第二感应线圈提供振荡电流时，在空腔中产生等离子体。

55. 发明申请

WO2015106190A1 DIFFUSION BONDED PLASMA RESISTED CHEMICAL VAPOR DEPOSITION (CVD) CHAMBER HEATER 审中-公开
标题翻译：扩散粘结等离子体电化学蒸气沉积（CVD）室加热器
公开(公告)号：WO2015106190A1
公开(公告)日：2015-07-16
申请号：PCT/US2015/011002
申请日：2015-01-12
申请人： APPLIED MATERIALS, INC.
发明人： DUAN, Ren-Guan , ROCHA-ALVAREZ, Juan Carlos , ZHOU, Jianhua
IPC分类号： C23C14/22 , C23C14/28 , C23C14/54
CPC分类号： B32B37/24 , B32B38/0008 , B32B2037/246 , B32B2038/0016 , B32B2264/107 , B32B2315/02 , H01L21/67103 , H01L21/68757 , H05B3/143 , H05B3/42
摘要： Embodiments of the present invention generally relate to heated substrate supports having a protective coating thereon. The protective coating is formed from pure yttria or alloys predominantly of yttria. The protective coating is diffusion bonded to the heater plate of the substrate support. Two distinct silicon containing layers are formed between the heater plate and the protective coating as the result of the diffusion bonding.
摘要翻译：本发明的实施方案一般涉及其上具有保护涂层的加热的衬底支撑件。保护涂层由纯氧化钇或主要由氧化钇合金形成。保护涂层扩散接合到基板支架的加热板上。作为扩散接合的结果，在加热器板和保护涂层之间形成两个不同的含硅层。

56. 发明申请

WO2014158370A2 TEMPERATURE MEASUREMENT IN MULTI-ZONE HEATER 审中-公开
标题翻译：多区加热器温度测量
公开(公告)号：WO2014158370A2
公开(公告)日：2014-10-02
申请号：PCT/US2014/015344
申请日：2014-02-07
申请人： APPLIED MATERIALS, INC.
发明人： DU BOIS, Dale R. , YANG, Bozhi , ZHOU, Jianhua , BALUJA, Sanjeev , BANSAL, Amit Kumar , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/66 , H01L21/683
CPC分类号： H01L21/67248 , G01K1/08 , G01K1/14 , G01K7/02 , G01K7/16 , G01K13/00 , H01L21/68742 , H01L21/68792
摘要： Embodiments of the present disclosure generally provide apparatus and methods for monitoring one or more process parameters, such as temperature of substrate support, at various locations. One embodiment of the present disclosure provides a sensor column for measuring one or more parameters in a processing chamber. The sensor column includes a tip for contacting a chamber component being measured, a protective tube having an inner volume extending from a first end and second end, wherein the tip is attached to the first end of the protective tube and seals the protective tube at the first end, and a sensor disposed near the tip. The inner volume of the protective tube houses connectors of the sensor, and the tip is positioned in the processing chamber through an opening of the processing chamber during operation.
摘要翻译：本公开的实施例通常提供用于在各个位置监视一个或多个工艺参数（例如衬底支撑件的温度）的装置和方法。本公开的一个实施例提供了用于测量处理室中的一个或多个参数的传感器列。传感器柱包括用于接触正被测量的腔室部件的尖端，具有从第一端和第二端延伸的内部容积的保护管，其中尖端附接到保护管的第一端并将保护管密封在第一端和设置在尖端附近的传感器。保护管的内部容积容纳传感器的连接器，并且尖端在操作期间通过处理室的开口位于处理室中。

57. 发明申请

WO2014116304A3 METHOD AND HARDWARE FOR CLEANING UV CHAMBERS 审中-公开
公开(公告)号：WO2014116304A3
公开(公告)日：2014-07-31
申请号：PCT/US2013/055594
申请日：2013-08-19
申请人： APPLIED MATERIALS, INC.
发明人： BALUJA, Sanjeev , DEMOS, Alexandros T. , CHAN, Kelvin , ROCHA-ALVAREZ, Juan Carlos , HENDRICKSON, Scott A. , KANGUDE, Abhijit , TUREVSKY, Inna , CHHABRA, Mahendra , NOWAK, Thomas , YAO, Daping , XIE, Bo , RAJ, Daemian
IPC分类号： H01L21/302 , H01L21/02
摘要： A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF 3 and O 2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

58. 发明申请

WO2014052301A1 CONTROLLING TEMPERATURE IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：控制衬底加工系统的温度
公开(公告)号：WO2014052301A1
公开(公告)日：2014-04-03
申请号：PCT/US2013/061375
申请日：2013-09-24
申请人： APPLIED MATERIALS, INC.
发明人： ROCHA-ALVAREZ, Juan Carlos , BANSAL, Amit Kumar , BALASUBRAMANIAN, Ganesh , ZHOU, Jianhua , SANKARAKRISHNAN, Ramprakash
IPC分类号： H01L21/02
CPC分类号： C23C16/50 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01L21/6719
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor such as a face plate coupled to a power source, and a heater coupled to the conductive gas distributor. A zoned blocker plate is coupled to the conductive gas distributor and a cooled gas cap is coupled to the zoned blocker plate. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.
摘要翻译：提供了一种用于等离子体处理衬底的装置。该设备包括处理室，设置在处理室中的基板支撑件和耦合到处理室的盖组件。盖组件包括导电气体分配器，例如耦合到电源的面板和耦合到导电气体分配器的加热器。分区阻挡板联接到导电气体分配器，并且冷却的气帽联接到分区阻挡板。调谐电极可以设置在导电气体分配器和腔体之间，用于调节等离子体的接地路径。第二调谐电极可以耦合到衬底支撑件，并且偏置电极也可以耦合到衬底支撑件。

59. 发明申请

WO2014003995A1 ENHANCEMENT IN UV CURING EFFICIENCY USING OXYGEN-DOPED PURGE FOR ULTRA LOW-K DIELECTRIC FILM 审中-公开
标题翻译：在超低压电介质膜中使用氧化浸渍的UV固化效率的增强
公开(公告)号：WO2014003995A1
公开(公告)日：2014-01-03
申请号：PCT/US2013/044130
申请日：2013-06-04
申请人： APPLIED MATERIALS, INC. , CHHABRA, Mahendra , HENDRICKSON, Scott A. , BALUJA, Sanjeev , KIYOHARA, Tsutomu , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T.
发明人： CHHABRA, Mahendra , HENDRICKSON, Scott A. , BALUJA, Sanjeev , KIYOHARA, Tsutomu , ROCHA-ALVAREZ, Juan Carlos , DEMOS, Alexandros T.
IPC分类号： H01L21/3115 , H01L21/324
CPC分类号： C23C16/4405 , B05D3/066 , C23C14/00 , C23C16/56 , G02B1/00 , H01L21/02126 , H01L21/02203 , H01L21/02337 , H01L21/02348 , H01L21/67115 , H01L21/6719 , H01L21/76825
摘要： Embodiments of the invention provide methods for curing an ultra low-k dielectric film within a UV processing chamber. In one embodiment, the method includes depositing an ultra low-k dielectric layer on a substrate in a deposition chamber, and subjecting the deposited ultra low-k dielectric layer to a UV curing processes in a UV processing chamber. The method includes stabilizing the UV processing chamber by flowing an oxygen gas and a purge gas into the UV processing chamber at a flow ratio of about 1:50000 to about 1:100. While flowing the oxygen-doped purge gas, the substrate is exposed to UV radiation to cure the deposited ultra low-k dielectric layer. The inventive oxygen-doped purge curing process provides an alternate pathway to build silicon-oxygen network of the ultra low-k dielectric material, thereby accelerating cross-linking efficiency without significantly affecting the film properties of the deposited ultra low-k dielectric material.
摘要翻译：本发明的实施例提供了在UV处理室内固化超低k电介质膜的方法。在一个实施例中，该方法包括在沉积室中的衬底上沉积超低k电介质层，以及在UV处理室中对沉积的超低k电介质层进行UV固化过程。该方法包括通过以约1：50000至约1:100的流量比将氧气和净化气体流入UV处理室来稳定UV处理室。在流过氧掺杂的净化气体的同时，衬底暴露于UV辐射以固化沉积的超低k电介质层。本发明的氧掺杂清洗固化方法提供构建超低k电介质材料的硅 - 氧网络的替代途径，从而加速交联效率而不显着影响沉积的超低k电介质材料的膜性质。

60. 发明申请

WO2013162848A1 METHOD FOR UV BASED SILYLATION CHAMBER CLEAN 审中-公开
标题翻译：紫外线基硅烷清洗方法
公开(公告)号：WO2013162848A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/035297
申请日：2013-04-04
申请人： APPLIED MATERIALS, INC. , XIE, Bo , DEMOS, Alexandros T. , HENDRICKSON, Scott A. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos
发明人： XIE, Bo , DEMOS, Alexandros T. , HENDRICKSON, Scott A. , BALUJA, Sanjeev , ROCHA-ALVAREZ, Juan Carlos
IPC分类号： H01L21/302 , H01L21/02
CPC分类号： B08B7/0021 , B08B7/0035 , C23C16/4405 , H01J37/3244 , H01J37/32862
摘要： Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.
摘要翻译：本发明的实施例通常提供用于清洁UV处理室的方法。在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中，在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从存在于热处理室中的室组分的暴露表面去除不想要的残留物或沉积物使用活性氧自由基。

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