专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明专利

JP2006027936A Method for processing glass substrate to be flat 审中-公开
标题翻译：将玻璃基板加工成平面的方法
公开(公告)号：JP2006027936A
公开(公告)日：2006-02-02
申请号：JP2004207086
申请日：2004-07-14
申请人： Yuzo Mori , Tosoh Corp , 東ソー株式会社 , 森勇蔵
发明人： MORI YUZO , OKAMURA TOSHIHIKO , ASANO MUTSUMI
IPC分类号： C03C15/00 , G03F1/24 , G03F1/60
摘要： PROBLEM TO BE SOLVED: To provide a method for processing the whole surface of a glass substrate to be highly flat. SOLUTION: The method for processing the glass substrate to be flat is performed by reacting the glass substrate with a radical generated on the substrate with plasma and controlling the volatilized amount of a reaction product. Straight scanning is performed to a direction on X-Y axes and to the reverse direction after the step scanning is performed with the width wider than a plasma processing area. After the repeat of the straight/step scanning exceeds the size of the glass substrate, plasma is moved from the position where initial straight scanning is started to a step direction at a specified interval. The straight scanning and the step scanning with a width wider than a plasma processing area are repeated again in the method. Glass for stabilizing the plasma having the width wider than the plasma processing area with static plasma is placed at the periphery of the glass substrate for processing. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种将玻璃基板的整个表面加工成高度平坦的方法。解决方案：通过使玻璃基板与基板上产生的自由基与等离子体反应并控制反应产物的挥发量来进行平坦化处理的方法。在宽度大于等离子体处理区域的宽度进行步进扫描之后，对X-Y轴方向和反方向进行直线扫描。在直/扫描扫描的重复超过玻璃基板的尺寸之后，等离子体以指定的间隔从初始直扫扫的位置移动到台阶方向。在该方法中再次重复直径扫描和宽度比等离子体处理区域宽的步长扫描。用于将等离子体的宽度比等离子体处理区域的宽度等于静态等离子体稳定的玻璃放置在玻璃基板的外围进行处理。版权所有（C）2006，JPO＆NCIPI

52. 发明专利

JP2006021295A Method and device for processing ultraprecise mirror surface 有权
标题翻译：用于处理超声镜面的方法和装置
公开(公告)号：JP2006021295A
公开(公告)日：2006-01-26
申请号：JP2004203423
申请日：2004-07-09
申请人： Yuzo Mori , 森勇蔵
发明人： MORI YUZO
IPC分类号： B24B31/10 , B24B1/04 , B24B31/14 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for processing an ultraprecise mirror surface capable of mirror-surface processing a surface to be processed of a workpiece such as a semiconductor wafer and a substrate for a thin film without generating distortion, cracks, and thermal deterioration, etc., and suitable for mass-production. SOLUTION: The surface to be processed of the workpiece K is horizontally held in a processing container W. Superfine powder adsorbing water molecules is housed in the processing container and positioned on the surface to be processed. The superfine powder is made to contact in a fluidized state with the surface to be processed of the workpiece by two-dimensionally oscillating the processing container in a horizontal surface. The mirror surface processing is made to proceed by mutual action on an interface between the superfine powder and the surface to be processed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于处理超精密镜面的方法和装置，其能够对诸如半导体晶片的工件（例如半导体晶片）和薄膜的基板进行加工的表面进行镜面处理而不产生变形，裂纹和热劣化等，适合批量生产。解决方案：将工件K的待加工表面水平地保持在加工容器W中。吸附水分子的超细粉末容纳在处理容器中并且位于待处理的表面上。通过使处理容器在水平面上二维摆动，使超细粉末以流化状态与待加工的表面接触。通过在超细粉末和待处理表面之间的界面上的相互作用来进行镜面处理。版权所有（C）2006，JPO＆NCIPI

53. 发明专利

JP2004241510A Plasma processor 有权
公开(公告)号：JP2004241510A
公开(公告)日：2004-08-26
申请号：JP2003027689
申请日：2003-02-04
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 森勇蔵
发明人： EHATA YUSUKE , MORI YUZO
IPC分类号： H05H1/24 , B01J19/08 , C23C16/50 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To effectively remove particulates, reaction products and the like, which are bonded to the surface of a rotary electrode, and to suppress contamination of the peripheral atmosphere of the rotary electrode and the surface of a substrate. SOLUTION: The rotary electrode 1 and the substrate 2 are mutually oppositely arranged by leaving a prescribed interval. Power is supplied to the rotary electrode 1, and the rotary electrode 1 is rotated while plasma P is generated in a gap between the rotary electrode 1 and the substrate 2. Reactant gas is supplied to a plasma generation region and reactant gas is made to cause chemical reaction. A prescribed plasma processing is performed on the substrate 2. A nozzle 4 jetting gas onto a surface of the rotary electrode 1 from a gas jet port and the suction port 3a of a suction means sucking gas are installed near the rotary electrode 1. The suction port 3a sucks and removes the particulates, the reaction products and the like, and sucks and removes the particulates and the reaction products, which are peeled from the rotary electrode 1 by gas jetted on the surface of the rotary electrode 1 from the nozzle 4. COPYRIGHT: (C)2004,JPO&NCIPI

54. 发明专利

JP2004107788A Method for producing silicon oxide thin film or titanium oxide thin film 有权
公开(公告)号：JP2004107788A
公开(公告)日：2004-04-08
申请号：JP2003005649
申请日：2003-01-14
申请人： Kobe Steel Ltd , Yuzo Mori , 株式会社神戸製鋼所 , 森勇蔵
发明人： KUGIMIYA TOSHIHIRO , GOTO YASUSHI , HAYASHI KAZUYUKI , MORI YUZO
IPC分类号： H05H1/24 , C03C17/02 , C03C17/245 , C23C16/40 , C23C16/42
摘要： PROBLEM TO BE SOLVED: To provide a method by which oxide thin films of high quality can inexpensively be produced with high productivity in the deposition of a silicon oxide thin film or a titanium oxide thin film by plasma generation. SOLUTION: A CVD system is employed in which plasma is generated in a narrow gap between a cylindrical rotary electrode or an endless belt electrode and a counter electrode provided so as to be confronted with part of the above electrode under a pressure close to the atmospheric pressure by glow discharge to decompose a silicon based reaction gas, so that a silicon oxide thin film is deposited on a base material mounted on the counter electrode. As the silicon based reaction gas, a reaction gas at least containing an inert gas, oxygen and silicon based alkoxide is used, and the partial pressure ratio of the silicon based alkoxide in the reaction gas is controlled to 0.1 to 3.0%. COPYRIGHT: (C)2004,JPO

55. 发明专利

JP2004056152A Formation method of thin film and manufacturing method of semiconductor device 有权
公开(公告)号：JP2004056152A
公开(公告)日：2004-02-19
申请号：JP2003277115
申请日：2003-07-18
申请人： Yuzo Mori , Sharp Corp , シャープ株式会社 , 森勇蔵
发明人： NAKAHAMA KOJI , MORI YUZO
IPC分类号： C23C16/34 , H01L21/318 , H01L21/336 , H01L21/768 , H01L23/522 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a formation method of such a thin film as a thin film formed by a reduced pressure plasma CVD method using a plasma CVD device under gas pressure greatly higher than the gas pressure used by the reduced pressure plasma CVD method.
SOLUTION: A SiNx thin film is formed by such a plasma CVD method that the pressure in a reaction vessel provided with a mixed gas of SiH
4 , NH
3 , H
2 , and rare gas is nearly adjusted to atmospheric pressure. A source gas is used, of which the ratio (NH
3 /SiH
4 ratio) of NH
3 to SiH
4 in the mixture is set to 2 or more to 20 or less, and of which the distribution ratio of H
2 in the mixture is set to 5% or more (preferably 10% or more).
COPYRIGHT: (C)2004,JPO

56. 发明专利

JP2004039799A Plasma cvd apparatus 有权
公开(公告)号：JP2004039799A
公开(公告)日：2004-02-05
申请号：JP2002193488
申请日：2002-07-02
申请人： Kobe Steel Ltd , Yuzo Mori , 株式会社神戸製鋼所 , 森勇蔵
发明人： HOSOKAWA YOSHIYUKI , HAYASHI KAZUYUKI , KUGIMIYA TOSHIHIRO , GOTO YASUSHI , MORI YUZO
IPC分类号： H05H1/24 , C23C16/509 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for the high speed formation of a high quality film using rotating electrodes. SOLUTION: A pair of rotating electrodes RE are so located as to face each other while they also face a base material 14. Powers 20 for generating plasma are supplied to the rotating electrodes to form a first plasma region 24 in a place where the two electrodes RE face each other, and a second plasma region 26 continuous with the first plasma region 24 in a space between the two electrodes RE and the surface of the base material 14. By the rotation of the rotating electrodes RE or by the other feeding means, a reactive gas is passed through the plasma regions 24 and 26 in the order of the first plasma region 24 first, and then the second plasma region 26 to cause a chemical reaction to form a thin film on the surface of the base material 14. COPYRIGHT: (C)2004,JPO

57. 发明专利

JP2003013237A Plasma film-forming apparatus 有权
标题翻译：等离子体成膜装置
公开(公告)号：JP2003013237A
公开(公告)日：2003-01-15
申请号：JP2001196862
申请日：2001-06-28
申请人： Kobe Steel Ltd , Yuzo Mori , 株式会社神戸製鋼所 , 森勇蔵
发明人： HAYASHI KAZUYUKI , KOBAYASHI AKIRA , KUGIMIYA TOSHIHIRO , GOTO YASUSHI , ISHIBASHI KIYOTAKA , NAKAGAMI AKIMITSU , MORI YUZO
IPC分类号： C23C16/50 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a plasma film-forming apparatus, which enables rapid film formation even when using a liquid raw material with low vapor pressure, and rapidly can form a metal oxide thin-film such as titania and zircon, a metal nitride thin-film such as silicon nitride and titanium nitride, and a metal thin-film such as aluminum and titanium.
SOLUTION: This plasma film-forming apparatus comprises generating plasma under a high pressure such as atmospheric pressure by a drum-shaped rotating electrode 101, and coating a substrate 102 with the liquid raw material including elements constituting the thin film by a raw material coating means 105, before the substrate 102 arrives at a plasma region. Then, the apparatus can supply a large quantity of raw material gas to plasma, by coating the substrate 102 with the above liquid raw material and vaporizing it when employing the above liquid raw material even with the low vapor pressure.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了提供等离子体薄膜形成装置，即使在使用低蒸气压的液体原料的情况下也能够快速成膜，并且可以快速地形成诸如二氧化钛和锆石的金属氧化物薄膜，金属氮化物诸如氮化硅和氮化钛的薄膜和诸如铝和钛的金属薄膜。解决方案：该等离子体成膜装置包括通过鼓形旋转电极101在诸如大气压的高压下产生等离子体，并且通过原料涂覆装置将构成薄膜的液体原料包括在构成薄膜的元件的基板102上在衬底102到达等离子体区域之前。然后，即使在低蒸汽压下使用上述液体原料，该装置也可以通过用上述液体原料涂布基板102并使其蒸发而将大量的原料气体供应给等离子体。

58. 发明专利

JP2003003264A Film deposition system, and method for preventing contamination in film deposition system 有权
标题翻译：薄膜沉积系统及防止薄膜沉积系统污染的方法
公开(公告)号：JP2003003264A
公开(公告)日：2003-01-08
申请号：JP2001190776
申请日：2001-06-25
申请人： Kobe Steel Ltd , Yuzo Mori , 株式会社神戸製鋼所 , 森勇蔵
发明人： HAYASHI KAZUYUKI , KOBAYASHI AKIRA , GOTO YASUSHI , KUGIMIYA TOSHIHIRO , OKADA KAZUTO , ISHIBASHI KIYOTAKA , NAKAGAMI AKIMITSU , MORI YUZO
IPC分类号： C23C16/44 , H01L21/677 , H01L21/68 , H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To prevent, with certainty, contamination due to the mixing-in of dissimilar source gas while obviating the necessity of vacuuming in each film deposition chamber and shortening the cycle time.
SOLUTION: In a film deposition system where a plurality of kinds of thin film are deposited onto a substrate 14 by transferring this substrate 14 from a first deposition chamber 10P (10I) to a second deposition chamber 10I (10N) via a substrate transfer chamber 30A (30B), the inside of the substrate transfer chamber is scavenged by using scavenging gas composed of gas used in common to the respective deposition chambers or gas having no influence on film deposition in both of the deposition chambers. Thus, the occurrence of contamination due to the mixing-in of dissimilar source gas in the respective deposition chambers can be prevented.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止由于不同源气体的混合而导致的污染，同时避免了在每个成膜室中抽真空的需要并且缩短了循环时间。解决方案：在通过基板传送室30A将基板14从第一沉积室10P（10I）转移到第二沉积室10I（10N）的基板14上沉积多种薄膜的薄膜沉积系统中（30B）中，通过使用由各个沉积室共同使用的气体构成的清扫气体或在两个沉积室中对膜沉积没有影响的气体来清除衬底传送室的内部。因此，可以防止由于各个沉积室中的不同源气体的混入引起的污染的发生。

59. 发明申请

US20100221986A1 Electron-Beam-Assisted EEM Method 有权
标题翻译：电子束辅助EEM方法
公开(公告)号：US20100221986A1
公开(公告)日：2010-09-02
申请号：US11989960
申请日：2006-08-03
申请人： Yuzo Mori
发明人： Yuzo Mori
IPC分类号： B24B1/00
CPC分类号： G21K1/06 , B23H5/04 , B23H7/38 , B23K15/00 , B24B31/10 , B24C1/08 , G21K2201/064 , G21K2201/067 , Y10S451/908
摘要： To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process. After the exposure of the workpiece in its working face to an electron beam to conduct modification so that the machining speed of the surface layer part in the working face is substantially even, ultraprecision smoothening is carried out by working process.
摘要翻译：提供一种能够实现包括玻璃陶瓷材料在内的工件的超精密加工的电子束辅助EEM方法，其中在加工过程中以加工速度彼此不同的至少两种组分材料以精细混合状态存在，并且表面状态不均匀，表面粗糙度为0.2〜0.05nm RMS。 EEM方法包括工作过程，其中允许工件和化学反应性微粒沿着工作面流动，以通过细颗粒与细颗粒之间的化学相互作用将微粒与化学键合的工作面上的原子除去工作面界面。工件包括以精加工的混合状态存在并且在加工过程中以加工速度彼此不同的至少两种组分材料。在将工件的工作面暴露于电子束进行变形，使得工作面中的表层部的加工速度基本均匀的情况下，通过加工工序进行超精密平滑化。

60. 发明授权

US06875335B2 Electrolytic machining method and apparatus 有权
标题翻译：电解加工方法及装置
公开(公告)号：US06875335B2
公开(公告)日：2005-04-05
申请号：US10449515
申请日：2003-06-02
申请人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
发明人： Yuzo Mori , Mitsuhiko Shirakashi , Takayuki Saito , Yasushi Toma , Akira Fukunaga , Itsuki Kobata
IPC分类号： B23H3/08 , C25D11/02 , C25F3/00 , B23H3/00 , C25B9/00 , C25B13/00 , C25B15/00 , C25D17/00
CPC分类号： C25F3/00 , B23H3/08
摘要： An anode as a workpiece, and a cathode opposed to the anode with a predetermined spacing are placed in ultrapure water. A catalytic material promoting dissociation of the ultrapure water and having water permeability is disposed between the workpiece and the cathode. A flow of the ultrapure water is formed inside the catalytic material, with a voltage being applied between the workpiece and the cathode, to decompose water molecules in the ultrapure water into hydrogen ions and hydroxide ions, and supply the resulting hydroxide ions to a surface of the workpiece, thereby performing removal processing of or oxide film formation on the workpiece through a chemical dissolution reaction or an oxidation reaction mediated by the hydroxide ions. Thus, clean processing can be performed by use of hydroxide ions in ultrapure water, with no impurities left behind on the processed surface of the workpiece.
摘要翻译：将作为工件的阳极和与阳极相对的具有预定间隔的阴极置于超纯水中。在工件和阴极之间设置促进超纯水的离解并具有透水性的催化材料。在催化材料内部形成超纯水流，在工件和阴极之间施加电压，将超纯水中的水分子分解为氢离子和氢氧根离子，并将得到的氢氧根离子供给到从而通过化学溶解反应或由氢氧根离子介导的氧化反应来进行工件的去除处理或氧化膜形成。因此，可以通过在超纯水中使用氢氧根离子进行清洁处理，在工件的加工表面上不会留下杂质。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式