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    • 56. 发明专利
    • WATER PURIFYING DEVICE
    • JP2002273451A
    • 2002-09-24
    • JP2001084435
    • 2001-03-23
    • TANAKA HIDEO
    • TANAKA HIDEO
    • A01K63/04B01D19/02B01F1/00B01F5/10C02F1/24C02F1/50C02F1/78
    • PROBLEM TO BE SOLVED: To greatly heighten the deodorizing and sterilizing effect of a sludge water by improving the ozone contact efficiency to the sludge water by greatly prolonging the retention time of gaseous ozone in the sludge water. SOLUTION: A water purifying device is provided with an aerating pumping device 3 which is arranged at a center of a tank main body 2 in order to pump up water in the tank main body 2, a plurality of air-liquid agitating mixers 4 which are arranged above the tank main body 2 in order to introduce ozone in the tank main body 2 and a defoamer 6 which is arranged at a center above the tank main body 2 in order to discharge the sludge water in the tank main body 2 from an exit part 7 to outside the tank main body 2 via a foam guiding plate 5. A water level adjusting tank 10 of vertically movable partitioning plate structure is disposed on the side wall of the tank main body 2 so as to control water level in the tank main body 2 to be always constant via a drain valve 9 corresponding to increase/decrease of quantity of the sludge water flowing in the tank main body 2. The aerating pumping device 3 is constituted of a blower 31, an aerating pumping tank 32 and a plurality of air diffusing pipes 33 (or an underwater agitator) for jetting out compressed air or compressed wind by the blower 31 from a lower open side of the aerating pumping tank 32 to an inside of the aerating pumping tank 32.
    • 59. 发明授权
    • Method for manufacturing liquid crystal display device
    • 制造液晶显示装置的方法
    • US07511781B2
    • 2009-03-31
    • US10559169
    • 2004-06-03
    • Tanaka Hideo
    • Tanaka Hideo
    • G02F1/136
    • G02F1/133553G02F1/136227G02F1/1368G02F2001/136231G02F2001/136236G02F2001/13685
    • A semiconductor film is formed in a gap between a source electrode and a drain electrode of a thin film transistor in an active-matrix type liquid crystal display device. A metal film for a gate electrode is formed on said semiconductor film via a gate insulating film. A photo-resist film, having a thick portion in region including the gap and having an opening portion in contact-hole forming region, is formed on the metal film. A contact-hole is formed in the gate insulating film by using the organic material film as a mask. The organic material film is left on the region including the gap. A gate electrode is formed on the region including the gap by etching the first metal film by using the remained organic material film as a mask. An organic material film, having projections and depressions, is formed on a reflective region except the contact-hole forming region. A reflective electrode is formed on the organic material film having projections and depressions
    • 半导体膜形成在有源矩阵型液晶显示装置中的薄膜晶体管的源电极和漏电极之间的间隙中。 用于栅电极的金属膜通过栅极绝缘膜形成在所述半导体膜上。 在金属膜上形成有具有间隙的区域的大部分且具有接触孔形成区域的开口部的光致抗蚀剂膜。 通过使用有机材料膜作为掩模在栅极绝缘膜中形成接触孔。 有机材料膜留在包括间隙的区域上。 通过使用剩余的有机材料膜作为掩模,通过蚀刻第一金属膜,在包括间隙的区域上形成栅电极。 在除了接触孔形成区域之外的反射区域上形成具有凹凸的有机材料膜。 在具有凹凸的有机材料膜上形成反射电极