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51. 发明授权

US07435644B2 Method of manufacturing capacitor of semiconductor device 有权
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US07435644B2
公开(公告)日：2008-10-14
申请号：US11329577
申请日：2006-01-11
申请人： Woo-Gwan Shim , Jung-Min Oh , Chang-Ki Hong , Sang-Jun Choi , Sang-Yong Kim
发明人： Woo-Gwan Shim , Jung-Min Oh , Chang-Ki Hong , Sang-Jun Choi , Sang-Yong Kim
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852
摘要： Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.
摘要翻译：提供一种制造半导体器件的电容器的方法，其可以防止下电极的倾斜或电短路。在该方法中，在模具氧化物层上的接触插塞上方形成网状桥接绝缘层。蚀刻模具氧化物层和桥接绝缘层以限定电极区域。使用相对于桥接绝缘层的模具氧化物层的蚀刻选择性为500以上的蚀刻气体去除模具氧化物层。

52. 发明授权

US07384825B2 Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact 有权
标题翻译：在凹陷触点上制造具有相变材料的限定部分的相变存储元件的方法
公开(公告)号：US07384825B2
公开(公告)日：2008-06-10
申请号：US11100759
申请日：2005-04-07
申请人： Joon-sang Park , Chang-ki Hong , Sang-yong Kim
发明人： Joon-sang Park , Chang-ki Hong , Sang-yong Kim
IPC分类号： H01I21/332
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1683
摘要： Methods of fabricating phase change memory elements include forming an insulating layer on a semiconductor substrate, forming a through hole penetrating the insulating layer, forming a lower electrode in the through hole and forming a recess having a sidewall comprising a portion of the insulating layer by selectively etching a surface of the lower electrode relative to the insulating layer. A phase change memory layer is formed on the lower electrode. The phase change memory layer has a portion confined by the recess and surrounded by the insulating layer. An upper electrode is formed on the phase change memory layer. Phase change memory elements are also provided.
摘要翻译：制造相变存储元件的方法包括在半导体衬底上形成绝缘层，形成穿透绝缘层的通孔，在通孔中形成下电极，并通过选择性地形成具有侧壁的凹部，该侧壁包括绝缘层的一部分相对于绝缘层蚀刻下电极的表面。在下电极上形成相变存储层。相变存储层具有被凹部限制并被绝缘层包围的部分。上电极形成在相变存储层上。还提供相变存储元件。

53. 发明申请

US20070181150A1 Cleaning Solution and Cleaning Method of a Semiconductor Device 失效
标题翻译：半导体器件的清洁方案和清洁方法
公开(公告)号：US20070181150A1
公开(公告)日：2007-08-09
申请号：US11736260
申请日：2007-04-17
申请人： Sang-Yong KIM , Sang-Jun Choi , Chang-Ki Hong
发明人： Sang-Yong KIM , Sang-Jun Choi , Chang-Ki Hong
IPC分类号： C23G1/00 , B08B7/00 , B08B3/00
CPC分类号： C23F1/16 , C11D3/042 , C11D7/08 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/32134 , H01L21/76805 , H01L21/76814
摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.
摘要翻译：一种用于在制造半导体器件期间去除异物的清洁方法，包括用包括氧化剂的清洁溶液处理基底以形成化学氧化物层，然后除去化学氧化物层，从而从半导体衬底的表面去除异物。因此，异物可以基本上从基板的表面除去而不会腐蚀金属。

54. 发明申请

US20060284277A1 Semiconductor device including bit line formed using damascene technique and method of fabricating the same 审中-公开
标题翻译：包括使用镶嵌技术形成的位线的半导体器件及其制造方法
公开(公告)号：US20060284277A1
公开(公告)日：2006-12-21
申请号：US11510349
申请日：2006-08-25
申请人： Seung-pil Chung , Chang-jin Kang , Jeong-sic Jeon , Kyeong-koo Chi , Seung-young Son , Sang-yong Kim
发明人： Seung-pil Chung , Chang-jin Kang , Jeong-sic Jeon , Kyeong-koo Chi , Seung-young Son , Sang-yong Kim
IPC分类号： H01L29/00
CPC分类号： H01L27/10885 , H01L21/31116 , H01L21/76816 , H01L21/76831 , H01L27/10888 , H01L27/10891
摘要： A semiconductor device includes an insulating layer having a T-shaped groove formed by a wide opening overlapping a narrow opening, a bit line conductive layer that at least partially fills the narrow opening, and a bit line capping layer that fills the groove so that its top surface is as high as that of the insulating layer. Spacers are formed on the inner walls of the wide opening.
摘要翻译：半导体器件包括：绝缘层，其具有由窄开口重叠的宽开口形成的T形槽，至少部分填充窄开口的位线导电层和填充槽的位线封盖层，使得其顶表面与绝缘层一样高。隔板形成在宽开口的内壁上。

55. 发明申请

US20060189148A1 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US20060189148A1
公开(公告)日：2006-08-24
申请号：US11358082
申请日：2006-02-22
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/302 , C09K13/00 , H01L29/94
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

56. 发明授权

US06175777B1 Method for transferring wafer cassettes after checking whether process equipment is in a suitable mode 失效
标题翻译：在检查过程设备是否处于合适模式之后转移晶片盒的方法
公开(公告)号：US06175777B1
公开(公告)日：2001-01-16
申请号：US09008083
申请日：1998-01-16
申请人： Sang-yong Kim
发明人： Sang-yong Kim
IPC分类号： G06F1900
CPC分类号： H01L21/67276 , H01L21/67763
摘要： A method and system for transferring a wafer cassette between an Automated Guide Vehicle (AGV) and process equipment in a semiconductor fabrication facility involves transmitting a first signal from the AGV to the process equipment indicative of a cassette transfer request, checking whether the process equipment is in a suitable mode, setting the process equipment to the suitable mode after the checking step if the process equipment was not already in the suitable mode, and transferring the cassette between the AGV and the process equipment. A second transmitting step may be included, which sends a signal from the process equipment to the AGV authorizing the transfer of the cassette. The transmissions may be accomplished by wireless communications links such as a photo-coupled Parallel Input/Output link. A plurality of sensors may be used to detect whether a cassette is anywhere on a cassette stage during the checking step.
摘要翻译：用于在半导体制造设备中的自动引导车辆（AGV）和处理设备之间传送晶片盒的方法和系统包括将来自AGV的第一信号发送到指示盒传送请求的处理设备，检查处理设备是否是在合适的模式下，如果过程设备尚未处于适当的模式，并且在AGV和处理设备之间传送盒子，则在检查步骤之后将处理设备设置为适当的模式。可以包括第二发送步骤，其将来自处理设备的信号发送到授权传送盒式磁带的AGV。传输可以通过诸如光耦合并行输入/输出链路的无线通信链路来实现。可以使用多个传感器来检测在检测步骤期间盒式磁带是否在盒式磁带的任何位置。

57. 发明授权

US6090715A Masking process for forming self-aligned dual wells or self-aligned field-doping regions 有权
标题翻译：用于形成自对准双阱或自对准场掺杂区的掩模工艺
公开(公告)号：US6090715A
公开(公告)日：2000-07-18
申请号：US223458
申请日：1998-12-30
申请人： Sang-Yong Kim
发明人： Sang-Yong Kim
IPC分类号： H01L21/027 , H01L21/266 , H01L21/00
CPC分类号： H01L21/266
摘要： A masking process for forming first and second ion-doped regions on a substrate of a semiconductor device. An oxide layer and a first nitride layer are formed on the substrate in order. The first nitride layer is etched using a photolithography process to form a first predetermined pattern which exposes portions of the oxide layer. The exposed portions of the oxide layer are then etched using the first predetermined pattern as an etching mask, until portions of the substrate corresponding to the first ion-doped regions are exposed. Next, first ions are doped into the exposed portions of the substrate using the first predetermined pattern as a doping mask. The first predetermined pattern is removed. A second nitride layer is then formed over the substrate and the patterned oxide layer. Portions of the second nitride layer are removed to reveal the top of the patterned oxide layer, forming a second predetermined pattern on the substrate. The patterned oxide layer is etched, using the second predetermined pattern as an etching mask, until portions of the substrate corresponding to the second ion-doped regions are exposed. Next, second ions are doped into the exposed portions of the substrate using the second predetermined pattern as a doping mask.
摘要翻译：一种用于在半导体器件的衬底上形成第一和第二离子掺杂区域的掩模工艺。依次在基板上形成氧化物层和第一氮化物层。使用光刻工艺蚀刻第一氮化物层，以形成暴露部分氧化物层的第一预定图案。然后使用第一预定图案作为蚀刻掩模蚀刻氧化物层的暴露部分，直到暴露与第一离子掺杂区域对应的基板的部分。接下来，使用第一预定图案作为掺杂掩模，将第一离子掺杂到衬底的暴露部分中。第一预定图案被去除。然后在衬底和图案化氧化物层上形成第二氮化物层。去除第二氮化物层的部分以露出图案化氧化物层的顶部，在衬底上形成第二预定图案。使用第二预定图案作为蚀刻掩模蚀刻图案化氧化物层，直到暴露与第二离子掺杂区域相对应的衬底的部分。接下来，使用第二预定图案作为掺杂掩模，将第二离子掺杂到衬底的暴露部分中。

58. 发明授权

US5998181A Fermentation process for preparing xylitol using Candida tropicalis 失效
标题翻译：用热带假丝酵母制备木糖醇的发酵工艺
公开(公告)号：US5998181A
公开(公告)日：1999-12-07
申请号：US42006
申请日：1998-03-13
申请人： Sang Yong Kim , Deok Kun Oh , Soo Ryun Jung
发明人： Sang Yong Kim , Deok Kun Oh , Soo Ryun Jung
IPC分类号： C12P7/18 , C12P19/02 , C12N1/20
CPC分类号： C12R1/74 , C12P19/02 , C12P7/18 , Y10S435/922
摘要： The present invention relates to a fermentation process for preparing xylitol with high productivity and high yield using a novel strain of Candida tropicalis, more specifically, for preparing xylitol under optimal fermentation conditions for maximum xylitol production by optimizing the composition of medium containing xylose and the environmental conditions of culture such as pH, temperature and DO concentration.
摘要翻译：本发明涉及使用热带假丝酵母的新型菌株高生产率和高产量制备木糖醇的发酵方法，更具体地说，在最佳发酵条件下通过优化含有木糖的培养基的组成和环境的木糖醇生产来最大化木糖醇生产培养条件如pH，温度和DO浓度。

59. 发明授权

US5686277A Fermentation process for preparing xylitol using mutant cells 失效
标题翻译：使用突变细胞制备木糖醇的发酵方法
公开(公告)号：US5686277A
公开(公告)日：1997-11-11
申请号：US736622
申请日：1996-10-24
申请人： Sang Yong Kim , Deok Kun Oh , Jin Hwan Choi , Soo Eun Kim
发明人： Sang Yong Kim , Deok Kun Oh , Jin Hwan Choi , Soo Eun Kim
IPC分类号： C12N1/20 , C12P7/18 , C12P19/04 , C12N1/16
CPC分类号： C12R1/72 , C12P7/18 , Y10S435/921
摘要： The present invention relates to a fermentation process for preparing xylitol with high productivity using novel mutant cells of Candida parapsilosis, more specifically, for preparing xylitol under optimal fermentation conditions for maximum xylitol production by optimizing the composition of medium containing xylose and the environmental conditions of culture such as pH, temperature and DO concentration, anal controlling the concentration of mutant cells.
摘要翻译：本发明涉及使用新型假丝酵母突变型细胞制备木糖醇的发酵方法，更具体地说，用于通过优化含有木糖的培养基的组成和培养环境条件来最佳木糖醇生产的最佳发酵条件下制备木糖醇如pH，温度和DO浓度，肛门控制突变细胞的浓度。

60. 发明申请

US20120220742A1 Furan-Based Curable Compound Derived from Biomass, Solvent-Free Curable Composition, and Method for Preparing Same 有权
标题翻译：来自生物质的呋喃类固化剂，无溶剂固化性组合物及其制备方法
公开(公告)号：US20120220742A1
公开(公告)日：2012-08-30
申请号：US13394910
申请日：2010-05-11
申请人： Jin Ku Cho , Sang Yong Kim , Do Hoon Lee , Bo Ra Kim , Baek Jin Kim , Jae Won Jung , Sang Hyeup Lee , Jae Soung Lee
发明人： Jin Ku Cho , Sang Yong Kim , Do Hoon Lee , Bo Ra Kim , Baek Jin Kim , Jae Won Jung , Sang Hyeup Lee , Jae Soung Lee
IPC分类号： C08G65/22 , C07D407/14
CPC分类号： C07D407/14 , C08F2/48 , C08G59/26
摘要： The present invention relates to a furan-based curable compound derived from carbohydrate-based biomass, to a solvent-free curable composition, and to a method for preparing thereof, wherein the furan-based curable compound derived from biomass according to the present invention includes two epoxide functional groups bonded to at least one furan-based compound. The present invention may provide an environmentally friendly next-generation curable compound comprising a novel furan-based compound derived from biomass, which may be substituted for curable materials derived from oil resources, as a basic backbone, as well as a composition containing the same. According to the present invention, a curable material, which has a low contraction ratio during curing as compared to conventional radical-type curing materials, may be obtained, and a compound applied to the novel curing material may be prepared with a combination of excellent efficiency and cost-effectiveness.
摘要翻译：本发明涉及一种衍生自碳水化合物的生物质的呋喃类固化性化合物，无溶剂的可固化组合物及其制备方法，其中衍生自本发明的生物质的呋喃类固化性化合物包括两个与至少一种呋喃基化合物键合的环氧官能团。本发明可以提供一种环保的下一代可固化化合物，其包含衍生自生物质的新型呋喃基化合物，其可以替代源自石油资源的可固化材料作为基本骨架，以及含有该衍生物的组合物。根据本发明，可以获得与常规自由基固化材料相比在固化期间具有低收缩率的可固化材料，并且可以以优异的效率组合来制备应用于新型固化材料的化合物和成本效益。

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