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51. 发明申请

US20180133843A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180133843A1
公开(公告)日：2018-05-17
申请号：US15851554
申请日：2017-12-21
申请人： NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Takashi YAMADA , Daizo ODA , Teruo HAIBARA , Ryo OISHI , Kazuyuki SAITO , Tomohiro UNO
IPC分类号： B23K35/02 , H01L23/00 , C22C9/04 , C22C9/06 , B23K35/30
摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof. Containing an element that provides bonding reliability in a high-temperature environment improves the bonding reliability of the ball bonded part in high temperature. Furthermore, making an orientation proportion of a crystal orientation angled at 15 degrees or less to a wire longitudinal direction among crystal orientations in the wire longitudinal direction 30% or more when measuring crystal orientations on a cross-section of the core material in a direction perpendicular to a wire axis of the bonding wire, and making an average crystal grain size in the cross-section of the core material in the direction perpendicular to the wire axis of the bonding wire 0.9 to 1.5 μm provides a strength ratio of 1.6 or less.

52. 发明申请

US20180096965A1 METHOD FOR FORMING BALL IN BONDING WIRE 审中-公开
公开(公告)号：US20180096965A1
公开(公告)日：2018-04-05
申请号：US15569603
申请日：2016-04-14
申请人： NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Noritoshi ARAKI , Takashi YAMADA , Teruo HAIBARA , Ryo OISHI , Tomohiro UNO
IPC分类号： H01L23/00 , B23K20/00
CPC分类号： H01L24/85 , B23K20/007 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/745 , H01L24/78 , H01L2224/43125 , H01L2224/45144 , H01L2224/45147 , H01L2224/4556 , H01L2224/45565 , H01L2224/45572 , H01L2224/45644 , H01L2224/45664 , H01L2224/48463 , H01L2224/745 , H01L2224/781 , H01L2224/78268 , H01L2224/78301 , H01L2224/85045 , H01L2224/85054 , H01L2224/85065 , H01L2224/85075 , H01L2924/00011 , H01L2924/00014 , H01L2924/00015 , H01L2924/01004 , H01L2924/01201 , H01L2224/05599
摘要： The present invention provides a ball forming method for forming a ball portion at a tip of a bonding wire which includes a core material mainly composed of Cu, and a coating layer mainly composed of Pd and formed over a surface of the core material, wherein the ball portion is formed in non-oxidizing atmosphere gas including hydrocarbon which is gas at room temperature and atmospheric pressure, the method being capable of improving Pd coverage on a ball surface in forming a ball at a tip of the Pd-coated Cu bonding wire.

53. 发明授权

US09905817B2 Resin-metal composite seal container and method for producing same 有权
公开(公告)号：US09905817B2
公开(公告)日：2018-02-27
申请号：US14382897
申请日：2013-02-21
申请人： NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. , HONDA MOTOR CO., LTD.
发明人： Koichi Nose , Jun Nakatsuka , Yutaka Matsuzawa , Yu Murai
IPC分类号： H01M2/02 , H01M2/06 , H01G11/80 , H01G11/84 , H01G9/10 , H01G9/145 , H01G13/00
CPC分类号： H01M2/0285 , H01G9/10 , H01G9/145 , H01G11/80 , H01G11/84 , H01G13/00 , H01G13/003 , H01M2/0207 , H01M2/026 , H01M2/0267 , H01M2/0272 , H01M2/0287 , H01M2/06 , H01M2220/30 , Y02E60/13 , Y10T29/4911
摘要： A resin-metal composite sealed container having a heat seal part using a heat-sealing resin, between an end part of a first metal foil and an end part of a second metal foil, and a metallically sealed part with a weld bead, on the end face outside the heat sealed part of the first metal foil and the second metal foil. The resin-metal composite sealed container, wherein the melting point of the metal constituting the metal foil is higher by 300° C. or more than the thermal decomposition temperature of the heat-sealing resin, the specific gravity of the metal constituting the metal foil is 5 or more, and the weld bead is formed by a laser welding. A method for producing a metal-resin composite sealed container, comprising forming a container by heat sealing end parts of metal foils having laminated on at least one surface thereof a heat-sealing resin, and forming a metallically sealed part with a weld bead on the end faces of the metal foils by heating/welding an outer side of the heat sealed part of the container from a side of the end faces of the metal foils.

54. 发明授权

US09887172B2 Bonding wire for semiconductor device 有权
公开(公告)号：US09887172B2
公开(公告)日：2018-02-06
申请号：US15305584
申请日：2015-09-17
申请人： NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Daizo Oda , Motoki Eto , Kazuyuki Saito , Teruo Haibara , Ryo Oishi , Takashi Yamada , Tomohiro Uno
IPC分类号： H01L23/00 , C22C9/00
CPC分类号： H01L24/45 , B32B15/00 , C22C5/04 , C22C9/00 , C22C9/06 , H01L24/43 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45015 , H01L2224/45105 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/01031 , H01L2924/01032 , H01L2924/01028 , H01L2924/01077 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01012 , H01L2924/01029 , H01L2924/00012 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/013 , H01L2924/01007 , H01L2924/01001 , H01L2924/00013 , H01L2924/01004 , H01L2924/01046 , H01L2924/01033
摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

55. 发明授权

US09718688B2 Carbon plate and composite carbon plate 有权
公开(公告)号：US09718688B2
公开(公告)日：2017-08-01
申请号：US14779129
申请日：2014-03-20
申请人： Nippon Steel & Sumikin Materials Co., Ltd. , Nippon Steel & Sumitomo Metal Corporation
发明人： Eiki Tsushima , Shinkichi Murakami , Jun Nakatsuka , Kenichi Uemura , Takashi Iijima
IPC分类号： C01B31/00 , H01M8/02 , C01B31/04 , H01M8/0213 , H01M8/1018
CPC分类号： C01B31/00 , C01B32/00 , C01B32/20 , C01P2006/40 , H01M8/0213 , H01M2008/1095
摘要： A thin-plate-like flexible carbon plate having flexibility, excellent compressive strength, and even electrical conductivity is provided. A carbon plate 1 is a carbon plate having a thickness of 0.05 to 2.0 mm obtained by compression molding of a mixture of (a) 97 to 80 wt % carbon powder composed of 95 to 30 wt % expanded graphite powder and 5 to 70 wt % graphite powder, and (b) 3 to 20 wt % phenolic resin that do not contain ammonia, wherein a compressive strength is 3 MPa or more, a bending strain is 0.6% or more without a crack, and a contact resistance is 6 mΩ·cm2 or less.

56. 发明申请

US20170194280A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20170194280A1
公开(公告)日：2017-07-06
申请号：US15305584
申请日：2015-09-17
申请人： NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Daizo ODA , Motoki ETO , Kazuyuki SAITO , Teruo HAIBARA , Ryo OISHI , Takashi YAMADA , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , B32B15/00 , C22C5/04 , C22C9/00 , C22C9/06 , H01L24/43 , H01L2224/05624 , H01L2224/4312 , H01L2224/43125 , H01L2224/4321 , H01L2224/43825 , H01L2224/43826 , H01L2224/43827 , H01L2224/43848 , H01L2224/43986 , H01L2224/45 , H01L2224/45015 , H01L2224/45105 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/45669 , H01L2224/45671 , H01L2224/48465 , H01L2224/48507 , H01L2224/48824 , H01L2224/85045 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/00011 , H01L2924/00014 , H01L2924/01014 , H01L2924/10253 , H01L2924/1576 , H01L2924/181 , H01L2924/01031 , H01L2924/01032 , H01L2924/01028 , H01L2924/01077 , H01L2924/01078 , H01L2924/01005 , H01L2924/01015 , H01L2924/01012 , H01L2924/01029 , H01L2924/00012 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204 , H01L2924/20106 , H01L2924/20107 , H01L2924/20108 , H01L2924/20109 , H01L2924/2011 , H01L2924/20111 , H01L2924/20752 , H01L2924/013 , H01L2924/01007 , H01L2924/01001 , H01L2924/00013 , H01L2924/01004 , H01L2924/01046 , H01L2924/01033
摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer on a surface of the Cu alloy core material, and contains Ga and Ge of 0.011 to 1.2% by mass in total, which is able to increase bonding longevity of the ball bonded part in the high-temperature, high-humidity environment, and thus to improve the bonding reliability. The thickness of the Pd coating layer is preferably 0.015 to 0.150 μm. When the bonding wire further contains one or more elements of Ni, Ir, and Pt in an amount, for each element, of 0.011 to 1.2% by mass, it is able to improve the reliability of the ball bonded part in a high-temperature environment at 175° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

57. 发明申请

US20170117244A1 BONDING WIRE FOR SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20170117244A1
公开(公告)日：2017-04-27
申请号：US15107423
申请日：2015-09-18
申请人： NIPPON MICROMETAL CORPORATION , NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Takashi YAMADA , Daizo ODA , Teruo HAIBARA , Tomohiro UNO
IPC分类号： H01L23/00
CPC分类号： H01L24/45 , H01L2224/05624 , H01L2224/45015 , H01L2224/45147 , H01L2224/45565 , H01L2224/45572 , H01L2224/45609 , H01L2224/45618 , H01L2224/45644 , H01L2224/45647 , H01L2224/45655 , H01L2224/45664 , H01L2224/45669 , H01L2224/45673 , H01L2224/45678 , H01L2224/48011 , H01L2224/48247 , H01L2224/48507 , H01L2224/85065 , H01L2224/85075 , H01L2224/85439 , H01L2924/10253 , H01L2924/1576 , H01L2924/20752 , H01L2924/013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01007 , H01L2924/01001 , H01L2924/01028 , H01L2924/00013 , H01L2924/20656 , H01L2924/01046 , H01L2924/01078 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/0102 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01034 , H01L2924/01045 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01052 , H01L2924/01057 , H01L2924/01077 , H01L2924/01083 , H01L2924/01202 , H01L2924/01203 , H01L2924/01204
摘要： A bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface thereof, and the boding wire contains one or more elements of As, Te, Sn, Sb, Bi and Se in a total amount of 0.1 to 100 ppm by mass. The bonding longevity of a ball bonded part can increase in a high-temperature and high-humidity environment, improving the bonding reliability. When the Cu alloy core material further contains one or more of Ni, Zn, Rh, In, Ir, Pt, Ga and Ge in an amount, for each, of 0.011 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 170° C. or more. When an alloy skin layer containing Au and Pd is further formed on a surface of the Pd coating layer, wedge bondability improves.

59. 发明申请

US20170002711A1 METAL SUBSTRATE FOR CATALYTIC CONVERTERS 审中-公开
标题翻译：用于催化转化器的金属基材
公开(公告)号：US20170002711A1
公开(公告)日：2017-01-05
申请号：US15113230
申请日：2014-12-24
申请人： NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.
发明人： Tooru INAGUMA , Shogo KONYA , Yasuhiro TSUMURA , Toshio IWASAKI
IPC分类号： F01N3/28
CPC分类号： F01N3/2821 , F01N3/281 , F01N2330/02 , F01N2330/32 , F01N2330/322 , F01N2330/60
摘要： A metal substrate for catalytic converter is characterized by: a flat foil and a corrugated metal foil arranged on a gas inlet side end section being joined to each other; the flat foil and the corrugated metal foil arranged in an outer circumferential joining section being joined to each other, said outer circumferential joining section being connected to an end section of the gas inlet side end section in the axial direction; an outer jacket and the honeycomb core being joined by interposing a bonding layer in the gas outlet side end section area P fulfilling formula (A), when P is the length of the bonding layer in the axial direction; a corrugated metal foil having an impact mitigating section; the impact mitigating section being formed in an area corresponding to at least the gas inlet side end section and the outer circumferential joining section. 2 mm≦P≦50 mm (A):
摘要翻译：本发明的目的在于提供一种用于催化转化器的金属基材中耐寒，耐热，耐冲击的耐久性。 [解决方案]一种催化转化器用金属基材，其特征在于，包括：具有平坦的金属箔和波纹状金属箔的蜂窝状芯体，其以轴为中心重叠地卷绕; 以及围绕蜂窝芯的外周面的金属外护套。催化转化器用金属基材的特征在于：平坦的金属箔和布置在气体入口侧端部的波纹状金属箔彼此接合; 布置在外周接合部分中的扁平金属箔和波纹状金属箔彼此接合，所述外周接合部分沿轴向连接到气体入口侧端部的端部; 外套和蜂窝芯通过在从蜂窝芯的气体出口侧端部沿轴向延伸的气体出口侧端部区域中插入接合层而接合，所述气体出口侧端部区域形成在外侧夹克和蜂窝芯; P满足公式（A），当P是键合层在轴向上的长度时; 具有不同波浪相位的冲击减轻部的波纹状金属箔在轴向的前后方向; 冲击缓解部形成在至少对应于气体入口侧端部和外周接合部的区域中。 2 mm‰¤P‰¤50 mm

60. 发明申请

US20160052787A1 CARBON PLATE AND COMPOSITE CARBON PLATE 有权
标题翻译：碳板和复合碳板
公开(公告)号：US20160052787A1
公开(公告)日：2016-02-25
申请号：US14779129
申请日：2014-03-20
申请人： NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. , COMPOSITE MATERIALS CO., LTD. , NIPPON STEEL & SUMITOMO METAL CORPORATION `
发明人： Eiki TSUSHIMA , Shinkichi MURAKAMI , Jun NAKATSUKA , Kenichi UEMURA , Takashi IIJIMA
IPC分类号： C01B31/00 , H01M8/02
CPC分类号： C01B31/00 , C01B32/00 , C01B32/20 , C01P2006/40 , H01M8/0213 , H01M2008/1095
摘要： A thin-plate-like flexible carbon plate having flexibility, excellent compressive strength, and even electrical conductivity is provided. A carbon plate 1 is a carbon plate having a thickness of 0.05 to 2.0 mm obtained by compression molding of a mixture of (a) 97 to 80 wt % carbon powder composed of 95 to 30 wt % expanded graphite powder and 5 to 70 wt % graphite powder, and (b) 3 to 20 wt % phenolic resin that do not contain ammonia, wherein a compressive strength is 3 MPa or more, a bending strain is 0.6% or more without a crack, and a contact resistance is 6 mΩ·cm2 or less.
摘要翻译：提供了具有柔软性，优异的抗压强度，甚至导电性的薄板状柔性碳板。碳板1是通过压缩成型（a）由95〜30重量％的膨胀石墨粉末组成的97〜80重量％的碳粉末和5〜70重量％的碳粉末的混合物而获得的厚度为0.05〜2.0mm的碳板，石墨粉末和（b）不含氨的3〜20重量％的酚醛树脂，其中抗压强度为3MPa以上，弯曲应变为0.6％以上，没有裂纹，接触电阻为6μm＆amp; ·cm2以下。

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