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51. 发明申请

US20050254118A1 Nonlinear optical crystal 审中-公开
标题翻译：非线性光学晶体
公开(公告)号：US20050254118A1
公开(公告)日：2005-11-17
申请号：US11169668
申请日：2005-06-30
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Zhang-Gui Hu
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Zhang-Gui Hu
IPC分类号： G02F1/355 , G02F1/35 , H01S3/10
CPC分类号： G02F1/3551
摘要： There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.
摘要翻译：提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。

52. 发明申请

US20050241568A1 Process for producing crystalline nucleus and method of screening crystallization conditions 失效
标题翻译：生产晶核的方法和筛选结晶条件的方法
公开(公告)号：US20050241568A1
公开(公告)日：2005-11-03
申请号：US10525809
申请日：2003-08-25
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Hiroaki Adachi , Hiroshi Masuhara , Youichiroh Hosokawa , Kazufumi Takano
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Hiroaki Adachi , Hiroshi Masuhara , Youichiroh Hosokawa , Kazufumi Takano
IPC分类号： C30B7/00 , C30B9/00
CPC分类号： C30B7/00 , C30B29/58 , Y10S117/904
摘要： The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.
摘要翻译：本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。用飞秒激光10照射该过饱和溶液。在激光的焦点发生局部爆炸现象，从而产生晶核。当晶体长时间在晶核上生长时，获得高质量的晶体。本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

53. 发明申请

US20050164865A1 Silicon nitride-based composite sintered body and producing method thereof 失效
标题翻译：氮化硅基复合烧结体及其制造方法
公开(公告)号：US20050164865A1
公开(公告)日：2005-07-28
申请号：US11031994
申请日：2005-01-11
申请人： Masashi Yoshimura
发明人： Masashi Yoshimura
IPC分类号： C04B35/583 , C04B35/584 , C04B35/591 , C04B35/593 , C04B35/594 , C04B35/596
CPC分类号： C04B35/58071 , B82Y30/00 , C04B35/58014 , C04B35/58064 , C04B35/583 , C04B35/584 , C04B35/587 , C04B35/591 , C04B35/593 , C04B35/62615 , C04B35/62842 , C04B35/6303 , C04B35/64 , C04B2235/3217 , C04B2235/3225 , C04B2235/3804 , C04B2235/3813 , C04B2235/3826 , C04B2235/3843 , C04B2235/3856 , C04B2235/386 , C04B2235/3873 , C04B2235/3886 , C04B2235/404 , C04B2235/422 , C04B2235/425 , C04B2235/46 , C04B2235/5436 , C04B2235/5445 , C04B2235/5454 , C04B2235/549 , C04B2235/666 , C04B2235/781 , C04B2235/80 , C04B2235/85 , C04B2235/96
摘要： The present invention provides a silicon nitride-based sintered body having excellent mechanical properties from room temperature to a medium-low temperature range, a low friction coefficient and excellent wear resistance; a raw material powder for the sintered body; a method of producing the raw material powder; and a method of producing the sintered body. The sintered body of the present invention comprises silicon nitride, titanium compounds and boron nitride, or else silicon nitride, a titanium-based nitride and/or carbide, silicon carbide and graphite and/or carbon; and it has a mean particle diameter of 100 nm or less, and a friction coefficient under lubricant-free conditions of 0.3 or less, or else 0.2 or less. The silicon nitride-based composite powder, which is the raw material of the sintered body comprises primary particles of each of silicon nitride and titanium compounds, containing boron or carbon, each having a mean particle diameter of 20 nm or less, or 30 nm or less, and a phase containing an amorphous phase that surrounds the surfaces of the primary particles. Moreover, the method of producing the sintered body comprises pulverizing and mixing a silicon nitride powder, a sintering aid powder, a metallic titanium powder and a boron nitride powder, or else a silicon nitride powder, a sintering aid powder, a metallic titanium powder and a graphite and/or carbon powder, until the mean particle diameters become 20 nm or less, or else 30 nm or less, thus forming secondary
摘要翻译：本发明提供一种氮化硅类烧结体，其具有从室温至中低温范围的优异的机械性能，低摩擦系数和优异的耐磨性; 用于烧结体的原料粉末; 一种生产原料粉末的方法; 和烧结体的制造方法。本发明的烧结体包括氮化硅，钛化合物和氮化硼，或氮化硅，钛基氮化物和/或碳化物，碳化硅和石墨和/或碳; 平均粒径为100nm以下，无润滑条件下的摩擦系数为0.3以下，或0.2以下。作为烧结体的原料的氮化硅系复合粉末包含平均粒径为20nm以下或30nm以下的硼或碳的氮化硅和钛化合物的一次粒子，以及包含包围一次颗粒表面的非晶相的相。此外，制造烧结体的方法包括将氮化硅粉末，烧结助剂粉末，金属钛粉末和氮化硼粉末，或氮化硅粉末，烧结助剂粉末，金属钛粉末和石墨和/或碳粉末，直到平均粒径变为20nm以下，或者30nm以下，从而形成二次

54. 发明授权

US06911162B2 Conductive silicon nitride composite sintered body and a process for the production thereof 失效
标题翻译：导电氮化硅复合烧结体及其制造方法
公开(公告)号：US06911162B2
公开(公告)日：2005-06-28
申请号：US10172013
申请日：2002-06-17
申请人： Masashi Yoshimura
发明人： Masashi Yoshimura
IPC分类号： C04B35/58 , C04B35/584 , C04B35/591 , C04B35/626 , B29C67/00 , H05B6/00
CPC分类号： C04B35/591
摘要： A conductive silicon nitride composite sintered body having an average grain size of 200 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.6 μm or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 to 60 nm, and subsequently by molding and sintering. With the contexture that is characteristic of the present invention, it is possible to obtain a conductive silicon nitride composite sintered body having electric conductive particles of 5 to 60 volume percent that is capable of electric discharge machining.
摘要翻译：通过将氮化硅粉末和金属粉末一起研磨/混合，可以获得平均粒径为200nm以下，并且其放电加工后的相对粗糙度（Ra）为0.6μm以下的导电性氮化硅复合烧结体，直到氮化硅粉末的平均粒径为30〜60nm，随后通过模压和烧结。通过本发明的特征，可以获得具有能够进行放电加工的5〜60体积％的导电性粒子的导电性氮化硅复合烧结体。

55. 发明申请

US20050070387A1 Drive belt pulley and belt drive system 有权
标题翻译：驱动皮带轮和皮带传动系统
公开(公告)号：US20050070387A1
公开(公告)日：2005-03-31
申请号：US10944709
申请日：2004-09-21
申请人： Hirofumi Miyata , Shinichiro Nishikawa , Masashi Yoshimura
发明人： Hirofumi Miyata , Shinichiro Nishikawa , Masashi Yoshimura
IPC分类号： F16H55/54 , F16H7/08 , F16H7/12 , F16H7/18 , F16H55/36 , F16H7/14 , F16H7/20
CPC分类号： F16H7/12 , F16H7/18 , F16H55/36 , F16H2007/0865 , Y10S474/902
摘要： A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11. A support rod 8 is inserted in the shaft member 11, and the shaft member 11 is elastically supported to the support rod 8 through an elastic body 10. The elastic body 10 is provided within a quarter of the periphery of the support rod 8 that is located, when viewed along the axis of the shaft member 11, forward of the line of action of a radial shaft load on the shaft member 11 with respect to the direction of rotation of the pulley body 5. With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of the radial shaft load and is positioned obliquely relative to the drive belt 3. In this manner, a force of compensating for the deviation of the drive belt 3 is produced to avoid its wobbling.
摘要翻译：中空的圆筒形滑轮主体5由中空圆柱形轴构件11可旋转地承载。支撑杆8插入轴构件11中，并且轴构件11通过弹性体10弹性地支撑到支撑杆8.弹性主体10设置在支撑杆8的周边的四分之一区域内，当沿着轴构件11的轴线观察时，支撑杆8的周边中的径向轴负载的作用线在轴构件11上相对于通过这种构造，当驱动带3偏离到一侧时，滑轮体5立即成角度地移动，使得其相对于径向轴负载的方向倾斜水平差并且相对于驱动带3倾斜地定位。以这种方式，产生补偿传动带3的偏差的力，以避免其摆动。

56. 发明授权

US06554593B2 Dry screw vaccum pump having nitrogen injection 失效
标题翻译：具有氮气注入的干式真空泵
公开(公告)号：US06554593B2
公开(公告)日：2003-04-29
申请号：US10001018
申请日：2001-11-02
申请人： Masaru Mito , Masashi Yoshimura , Masaaki Takahashi
发明人： Masaru Mito , Masashi Yoshimura , Masaaki Takahashi
IPC分类号： F04C1816
CPC分类号： F04C29/005 , F04C2/086 , F04C2/18 , F04C13/002 , F04C15/0038 , F04C15/0088 , F04C15/0096 , F04C18/084 , F04C18/16 , F04C2220/12 , F05C2201/0442 , F05C2201/0466 , F05C2203/0808
摘要： A dry vacuum pump assembly that includes a casting having an inner chamber, an inlet and an outlet communicating with the inner chamber, a pair of right and left handed screw rotors positioned in the casing, each screw rotor having a cross section formed by a Quimby curve, a circular arc, and a quasi-Archimedean spiral curve, the pair of screw rotors intermeshing with each other to pump a process gas pumped from the inlet to the outlet. The pump assembly further includes a nitrogen-supplying tube that communicates with the inner chamber at a position near the outlet in the casing, and an external pipe that connects the outlet to a scrubber or a trap which external pipe is straight and does not include a silencer.
摘要翻译：一种干式真空泵组件，其包括具有内室，与内室连通的入口和出口的铸件，位于壳体中的一对左右螺旋转子，每个螺杆转子具有由Quimby形成的横截面曲线，圆弧和准阿基米德螺旋曲线，这对螺杆转子彼此啮合，以将从入口泵出的工艺气体泵送到出口。泵组件还包括氮气供应管，其在靠近壳体出口的位置处与内室连通，以及将出口连接到洗涤器或陷阱的外部管道，该外部管道是直的，并且不包括消声器

57. 发明授权

US5369065A Silicon nitride sintered body and process for producing the same 失效
标题翻译：氮化硅烧结体及其制造方法
公开(公告)号：US5369065A
公开(公告)日：1994-11-29
申请号：US118023
申请日：1993-09-08
申请人： Masashi Yoshimura , Jin-Joo Matsui , Takehisa Yamamoto , Akira Yamakawa
发明人： Masashi Yoshimura , Jin-Joo Matsui , Takehisa Yamamoto , Akira Yamakawa
IPC分类号： C04B35/584 , C04B35/593 , C04B35/58
CPC分类号： C04B35/5935
摘要： A silicon sintered body comprising a matrix phase consisting of silicon nitride and a grain boundary phase in which the silicon nitride consists of 66 to 99% by volume of .beta.-Si.sub.3 N.sub.4 and/or .beta.'-sialon with the balance being .alpha.-Si.sub.3 N.sub.4 and/or .alpha.'-sialon, the .beta.-Si.sub.3 N.sub.4 and/or .beta.'-sialon consisting of hexagonal rod-like grains having a diameter of 500 nm or less in the minor axis and an aspect ratio 5 to 25, the .alpha.-Si.sub.3 N.sub.4 and/or .alpha.'-sialon consisting of equi-axed grains having an average diameter of 300 nm or less, and titanium compounds are contained within the grains of the matrix phase and in the grain boundary phase. The sintered body is produced by mixing (1) 100 parts by weight of .alpha.-Si.sub.3 N.sub.4 powder, (2) 0.1 to 10 parts by weight of titanium oxide having an average particle size of 100 nm or less and (3) 2 to 15 parts by weight, in total, of specified sintering aids; molding the resultant powder mixture into a green compact; subjecting the green compact to primary sintering and secondary sintering under the prescribed conditions.
摘要翻译：一种硅烧结体，包括由氮化硅和晶界相组成的基质相，其中氮化硅由66-99体积％的β-Si 3 N 4和/或β' - 赛隆组成，余量为α-Si 3 N 4和/ 或α' - 塞隆，β-Si 3 N 4和/或β'-Sialon由短轴具有500nm或更小直径的六角棒状晶粒和5至25的长宽比组成，α-Si 3 N 4和/ 或由平均直径为300nm以下的等轴晶粒组成的α'-Sialon，并且钛化合物包含在基质相的晶粒内和晶界相中。烧结体通过混合（1）100重量份的α-Si 3 N 4粉末，（2）0.1〜10重量份的平均粒径为100nm以下的氧化钛和（3）2〜15重量份总共为指定的烧结助剂; 将所得粉末混合物成型为生坯; 在规定的条件下对生坯进行一次烧结和二次烧结。

58. 发明授权

US08962365B2 Method of manufacturing GaN-based film and composite substrate used therefor 有权
标题翻译：制造用于其的GaN基膜和复合基板的方法
公开(公告)号：US08962365B2
公开(公告)日：2015-02-24
申请号：US13696873
申请日：2011-12-21
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/00 , H01L21/02 , C30B23/02 , C30B25/18 , C30B29/40
CPC分类号： H01L21/0254 , C03C10/0018 , C04B35/106 , C04B35/16 , C04B35/185 , C04B35/481 , C04B35/486 , C04B35/488 , C04B35/645 , C04B35/6455 , C04B2235/3225 , C04B2235/3244 , C04B2235/3246 , C04B2235/3463 , C04B2235/9607 , C30B23/025 , C30B25/183 , C30B29/406 , H01L21/02002 , H01L21/02422 , H01L21/02436 , H01L21/02458 , H01L21/02658 , H01L21/02664
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

59. 发明授权

US08697550B2 Method of manufacturing GaN-based film 有权
标题翻译：制造GaN基膜的方法
公开(公告)号：US08697550B2
公开(公告)日：2014-04-15
申请号：US13643206
申请日：2011-11-10
申请人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
发明人： Issei Satoh , Yuki Seki , Koji Uematsu , Yoshiyuki Yamamoto , Hideki Matsubara , Shinsuke Fujiwara , Masashi Yoshimura
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/76256 , H01L33/0079
摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.
摘要翻译：本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

60. 发明授权

US08673796B2 Spinel light-transmitting window material and method for producing the same 有权
标题翻译：尖晶石透光窗材料及其制造方法
公开(公告)号：US08673796B2
公开(公告)日：2014-03-18
申请号：US13262311
申请日：2010-03-31
申请人： Masashi Yoshimura , Masaki Fukuma , Yutaka Tsuji , Shigeru Nakayama
发明人： Masashi Yoshimura , Masaki Fukuma , Yutaka Tsuji , Shigeru Nakayama
IPC分类号： C04B35/00
CPC分类号： C04B35/443 , C04B35/62635 , C04B35/63416 , C04B35/63448 , C04B35/63488 , C04B2235/658 , C04B2235/6581 , C04B2235/661 , C04B2235/77 , C04B2235/96 , C04B2235/9653
摘要： To provide a light-transmitting window material made of a spinel sintered body, wherein the largest diameter of pores contained in the light-transmitting window material is not more than 100 μm, and the number of pores having a largest diameter of not less than 10 μm is not more than 2.0 per 1 cm3 of the light-transmitting window material, and wherein light scattering factors are further reduced, and a method for producing a spinel light-transmitting window material including the steps of preparing a spinel molded body; a primary sintering step of sintering the spinel molded body at normal pressure or less or in a vacuum at a temperature in the range of 1500 to 1900° C.; and a secondary sintering step of sintering the spinel molded body under pressure at a temperature in the range of 1500 to 2000° C., wherein the relative density of the spinel molded body after the primary sintering step is 95 to 96% and the relative density of the spinel molded body after the secondary sintering step is 99.8% or more.
摘要翻译：为了提供由尖晶石烧结体制成的透光窗材料，其中包含在透光窗材料中的最大直径的孔不大于100μm，并且具有最大直径不小于10的孔数每1cm 3的透光窗材料的母体不超过2.0，进一步减少光散射因子，以及包括制备尖晶石成型体的尖晶石透光窗材料的方法。在1500〜1900℃的温度下，在常压或以下或真空中烧结尖晶石成型体的一次烧结工序。以及二次烧结工序，在1500〜2000℃的温度范围内的压力下烧结尖晶石成形体，其中，一次烧结工序后的尖晶石成型体的相对密度为95〜96％，相对密度的二次烧结步骤后的尖晶石成型体为99.8％以上。

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