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    • 51. 发明授权
    • Bidirectional optical transmitting and receiving device
    • 双向光发射和接收设备
    • US09122024B2
    • 2015-09-01
    • US13552015
    • 2012-07-18
    • Jong Jin LeeKwon-Seob Lim
    • Jong Jin LeeKwon-Seob Lim
    • H04B10/00G02B6/42
    • G02B6/4201
    • Disclosed is a bidirectional light transmitting and receiving device which includes a first conductive plate; a second conductive plate; at least one first lead pin which penetrates the first conductive plate and includes a first conductor and a first dielectric surrounding the first conductor; at least one second lead pin which penetrates the second conductive plate and includes a second conductor and a second dielectric surrounding the second conductor; a light receiving unit which is connected with the at least one first lead pin; and a light transmitting unit which is connected with the at least one second lead pin, wherein the first conductive plate is electrically isolated from the second conductive plate.
    • 公开了一种双向光发射和接收装置,其包括第一导电板; 第二导电板; 至少一个第一引脚,其穿过所述第一导电板并且包括第一导体和围绕所述第一导体的第一电介质; 至少一个第二引脚,其穿过所述第二导电板并且包括第二导体和围绕所述第二导体的第二电介质; 光接收单元,与所述至少一个第一引脚连接; 以及光传输单元,其与所述至少一个第二引脚连接,其中所述第一导电板与所述第二导电板电隔离。
    • 52. 发明授权
    • Ultra high speed and high sensitivity DNA sequencing system and method for same
    • 超高速和高灵敏度的DNA测序系统及方法相同
    • US09097719B2
    • 2015-08-04
    • US13063268
    • 2009-10-08
    • Jung Bum ChoiJong Jin Lee
    • Jung Bum ChoiJong Jin Lee
    • G01N27/00G01N33/58B82Y15/00C12Q1/68G01N33/487B82Y5/00B01L3/00G01N27/414
    • G01N33/588B01L3/502761B82Y5/00B82Y15/00C12Q1/6869G01N27/00G01N27/414G01N33/48721Y10S436/806C12Q2565/631C12Q2565/629C12Q2565/607
    • The present system relates to a system architecture that uses a single electron transistor (SET) to analyze base sequences of deoxyribonucleic acid (DNA) at ultra high speed in real time. DNA represents the entire body of genetic information and consists of nucleotide units. There are a total of four types of nucleotides, and each nucleotide consists of an identical pentose (deoxyribose), phosphate group, and one of four types of bases (Adenine: A, Guanine: G, Cytosine: C, Thymine: T). A and G are purines having a bicyclic structure while C and T are pyrimidines having a monocyclic structure. Each has a different atomic arrangement, which signifies a different charge distribution from one another. Therefore, a system comprising a single electron transistor that is very sensitive to charges, a probe of a very small size that reacts to one nucleotide very effectively, and an extended gate that connects the SET with the probe, can be used to analyze DNA base sequences at ultra high speed in real time.
    • 本系统涉及使用单电子晶体管(SET)实时分析超高速脱氧核糖核酸(DNA)的碱基序列的系统架构。 DNA代表整个遗传信息,由核苷酸单位组成。 总共有四种类型的核苷酸,每个核苷酸由相同的戊糖(脱氧核糖),磷酸基和四种碱基之一(腺嘌呤:A,鸟嘌呤:G,胞嘧啶:C,胸腺嘧啶)组成。 A和G是具有双环结构的嘌呤,而C和T是具有单环结构的嘧啶。 每个都具有不同的原子排列,这表示彼此不同的电荷分布。 因此,可以使用包括对电荷非常敏感的单电子晶体管的系统,非常有效地对一个核苷酸反应的非常小的尺寸的探针和将SET连接到探针的扩展的门来分析DNA碱基 实时超高速序列。
    • 53. 发明授权
    • Multiple quantum dot device and a production method for the device
    • 多量子点装置及其制造方法
    • US08829492B2
    • 2014-09-09
    • US13883321
    • 2010-11-25
    • Jung Bum ChoiJong Jin Lee
    • Jung Bum ChoiJong Jin Lee
    • H01L29/66H01L29/76B82Y10/00
    • H01L29/66977B82Y10/00H01L29/66439H01L29/7613
    • The present invention relates to a multi-quantum dot device and a method of manufacturing the multi-quantum dot device. Further specifically, present invention relates to a multi-quantum dot device including a channel configured by patterning the top silicon layer of an SOI wafer to have a P-type silicon region formed by connecting a transversal region and a longitudinal region and a plurality of N-type silicon regions; gates including a plurality of tunneling barrier gates, an end of each tunneling barrier gate is positioned on the top of a transversal side of an intersection of the transversal region and the longitudinal region of the P-type silicon region to locally control a potential in the channel; a plurality of coupling gates, an end of each coupling gate is positioned on the top of a point between the intersection and another intersection adjacent to the intersection to locally control the potential in the channel; and a plurality of sensor gates, an end of each sensor gate is positioned on the top of a center of the intersection to sense a state of a quantum dot formed at the intersection; and an inversion layer gate formed on the top of the P-type silicon region to control free electron density.
    • 本发明涉及一种多量子点装置及多量子点装置的制造方法。 更具体地说,本发明涉及一种多量子点器件,其包括通过对SOI晶片的顶部硅层进行构图而形成的沟道,以形成通过连接横向区域和纵向区域形成的P型硅区域和多个N 型硅区; 包括多个隧道势垒栅极的栅极,每个隧道势垒栅极的端部位于横向区域和P型硅区域的纵向区域的交叉的横向的顶部上,以局部地控制P型硅区域的电位 渠道; 多个耦合栅极,每个耦合栅极的端部位于交叉点和邻接相交处的另一交叉点之间的点的顶部,以局部地控制信道中的电位; 和多个传感器门,每个传感器门的端部位于交叉点的中心的顶部,以感测形成在交叉点处的量子点的状态; 以及形成在P型硅区域的顶部上以控制自由电子密度的反型层栅极。