专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

51. 发明授权

US08617938B2 Device and method for boron diffusion in semiconductors 有权
标题翻译：半导体中硼扩散的装置和方法
公开(公告)号：US08617938B2
公开(公告)日：2013-12-31
申请号：US13013357
申请日：2011-01-25
申请人： Joel P. De Souza , Marinus Hopstaken , Jeehwan Kim , Devendra K. Sadana
发明人： Joel P. De Souza , Marinus Hopstaken , Jeehwan Kim , Devendra K. Sadana
IPC分类号： H01L27/00
CPC分类号： H01L21/2256 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A device and method for semiconductor fabrication includes forming a buffer layer on a semiconductor substrate and depositing an amorphous elemental layer on the buffer layer. Elements of the elemental layer are diffused through the buffer layer and into the semiconductor layer.
摘要翻译：用于半导体制造的器件和方法包括在半导体衬底上形成缓冲层并在缓冲层上沉积非晶质元素层。元素层的元素通过缓冲层扩散到半导体层中。

52. 发明申请

US20130344644A1 PHOTORECEPTOR WITH IMPROVED BLOCKING LAYER 有权
公开(公告)号：US20130344644A1
公开(公告)日：2013-12-26
申请号：US13554886
申请日：2012-07-20
申请人： Bahman Hekmatshoartabari , Jeehwan Kim , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
发明人： Bahman Hekmatshoartabari , Jeehwan Kim , Devendra K. Sadana , Ghavam G. Shahidi , Davood Shahrjerdi
IPC分类号： H01L31/0264
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/1037
摘要： A photoreceptor includes a multilayer blocking structure to reduce dark discharge of the surface voltage of the photoreceptor resulting from electron injection from an electrically conductive substrate. The multilayer blocking structure includes wide band gap semiconductor layers in alternating sequence with one or more narrow band gap blocking layers. A fabrication method of the photoreceptor includes transfer-doping of the narrow band gap blocking layers, which are deposited in alternating sequence with wide band gap semiconductor layers to form a blocking structure. Suppression of hole or electron injection can be obtained using the method.

53. 发明授权

US08614116B2 Germanium photodetector 有权
标题翻译：锗光电探测器
公开(公告)号：US08614116B2
公开(公告)日：2013-12-24
申请号：US13556597
申请日：2012-07-24
申请人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
发明人： Solomon Assefa , Jeehwan Kim , Jin-Hong Park , Yurii A. Vlasov
IPC分类号： H01L21/00
CPC分类号： H01L31/1808 , H01L31/1085 , Y02E10/50
摘要： A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, patterning the Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline Ge layer, implanting n-type ions in the single crystalline Ge layer, heating the device to activate n-type ions in the single crystalline Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.
摘要翻译：一种形成光检测器件的方法包括：在基片上形成绝缘体层，在绝缘体层和一部分基底上形成锗（Ge）层，在Ge层上形成第二绝缘层，构图Ge层，形成在所述第二绝缘体层上的封盖绝缘体层和所述第一绝缘体层的一部分，加热所述器件以使所述Ge层结晶，得到单晶Ge层，在所述单晶Ge层中注入n型离子，将所述器件加热至在单晶Ge层中激活n型离子，以及形成电连接到单晶n型Ge层的电极。

54. 发明申请

US20130224900A1 SOLAR CELL MADE IN A SINGLE PROCESSING CHAMBER 有权
标题翻译：太阳能电池在单个加工室内制造
公开(公告)号：US20130224900A1
公开(公告)日：2013-08-29
申请号：US13406838
申请日：2012-02-28
申请人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/0352
CPC分类号： H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译：用于形成光伏器件的方法包括在衬底上沉积p型层并通过将p型层的表面暴露于等离子体处理以与污染物反应来清洁p型层。在p型层上形成本征层，在本征层上形成n型层。

55. 发明申请

US20130221373A1 SOLAR CELL MADE USING A BARRIER LAYER BETWEEN P-TYPE AND INTRINSIC LAYERS 有权
标题翻译：太阳能电池使用P型和内部层之间的障碍层
公开(公告)号：US20130221373A1
公开(公告)日：2013-08-29
申请号：US13406815
申请日：2012-02-28
申请人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译：一种用于形成光伏器件的方法包括在衬底上沉积p型层。通过将p型层暴露于氧化剂，在p型层上形成阻挡层。在势垒层上形成本征层，在本征层上形成n型层。

56. 发明申请

US20130049150A1 FORMATION OF METAL NANOSPHERES AND MICROSPHERES 有权
公开(公告)号：US20130049150A1
公开(公告)日：2013-02-28
申请号：US13606916
申请日：2012-09-07
申请人： Augustin J. Hong , Woo-Shik Jung , Jeehwan Kim , Jae-Woong Nah , Devendra K. Sadana
发明人： Augustin J. Hong , Woo-Shik Jung , Jeehwan Kim , Jae-Woong Nah , Devendra K. Sadana
IPC分类号： B32B3/30 , H01L31/0352
CPC分类号： H01L31/035227 , C03C15/00 , C03C17/06 , C03C2218/34 , H01L31/022433 , H01L31/02363 , H01L31/035281 , H01L31/0376 , H01L31/0392 , H01L31/03921 , H01L31/03923 , H01L31/03925 , H01L31/056 , H01L31/075 , Y02E10/52 , Y02E10/541 , Y02E10/548 , Y10S438/945 , Y10S977/773 , Y10S977/779 , Y10T428/12014 , Y10T428/12069 , Y10T428/12076 , Y10T428/24479 , Y10T428/24488 , Y10T428/2982
摘要： Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.

57. 发明申请

US20130001659A1 SELF-ALIGNED III-V MOSFET DIFFUSION REGIONS AND SILICIDE-LIKE ALLOY CONTACT 有权
标题翻译：自对准III-V MOSFET扩散区和类硅合金接触
公开(公告)号：US20130001659A1
公开(公告)日：2013-01-03
申请号：US13603739
申请日：2012-09-05
申请人： Cheng-Wei Cheng , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu
发明人： Cheng-Wei Cheng , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu
IPC分类号： H01L29/78
CPC分类号： H01L21/2258 , H01L21/246 , H01L21/28575 , H01L29/41775 , H01L29/452 , H01L29/517 , H01L29/66522
摘要： A metal oxide semiconductor field effect transistor and method for forming the same include exposing portions on a substrate adjacent to a gate stack, forming a dopant layer over the gate stack and in contact with the substrate in the portions exposed and annealing the dopant layer to drive dopants into the substrate to form self-aligned dopant regions in the substrate. The dopant layer is removed. A metal containing layer is deposited over the gate stack and in contact with the substrate in the exposed portions. The metal containing layer is annealed to drive metal into the substrate to form self-aligned contact regions in a metal alloy formed in the substrate within the dopant regions. The metal layer is then removed.
摘要翻译：金属氧化物半导体场效应晶体管及其形成方法包括在与栅极叠层相邻的衬底上的曝光部分，在栅极叠层上形成掺杂剂层，并在暴露并退火掺杂剂层驱动的部分中与衬底接触掺杂到衬底中以在衬底中形成自对准掺杂剂区域。去除掺杂剂层。在栅极叠层上沉积含金属层，并在暴露部分与衬底接触。对含金属层进行退火以将金属驱动到衬底中，以在掺杂区域内的衬底中形成的金属合金中形成自对准接触区域。然后去除金属层。

58. 发明申请

US20120285520A1 WAFER BONDED SOLAR CELLS AND FABRICATION METHODS 有权
标题翻译： WAFER BONDED太阳能电池和制造方法
公开(公告)号：US20120285520A1
公开(公告)日：2012-11-15
申请号：US13107371
申请日：2011-05-13
申请人： Stephen W. Bedell , Cheng-Wei Cheng , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu , Norma E. Sosa Cortes
发明人： Stephen W. Bedell , Cheng-Wei Cheng , Jeehwan Kim , Devendra K. Sadana , Kuen-Ting Shiu , Norma E. Sosa Cortes
IPC分类号： H01L31/06 , H01L31/18
CPC分类号： H01L31/0687 , H01L31/18 , Y02E10/544
摘要： A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.
摘要翻译：光伏器件和制造方法包括多结电池，每个电池具有彼此独立生长且包括不同带隙能量的材料。接口设置在单元之间并被配置为晶片结合单元，其中单元被配置为相邻而不考虑晶格失配。

59. 发明申请

US20120060905A1 NANOWIRES FORMED BY EMPLOYING SOLDER NANODOTS 有权
标题翻译：通过使用NANODOTS生产的纳米线
公开(公告)号：US20120060905A1
公开(公告)日：2012-03-15
申请号：US12879209
申请日：2010-09-10
申请人： KEITH E. FOGEL , Jeehwan Kim , Jae-Woong Nah , Devendra K. Sadana , Kuen-Ting Shiu
发明人： KEITH E. FOGEL , Jeehwan Kim , Jae-Woong Nah , Devendra K. Sadana , Kuen-Ting Shiu
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/035227 , H01L31/022425 , H01L31/02363 , H01L31/02366 , H01L31/0352 , H01L31/1804 , Y02E10/50
摘要： A photovoltaic device and method include depositing a metal film on a substrate layer. The metal film is annealed to form islands of the metal film on the substrate layer. The substrate layer is etched using the islands as an etch mask to form pillars in the substrate layer.
摘要翻译：光电器件和方法包括在衬底层上沉积金属膜。金属膜退火以在基底层上形成金属膜岛。使用岛作为蚀刻掩模蚀刻衬底层，以在衬底层中形成柱。

60. 发明申请

US20120031454A1 EFFICIENT NANOSCALE SOLAR CELL AND FABRICATION METHOD 有权
标题翻译：高效的纳米级太阳能电池和制造方法
公开(公告)号：US20120031454A1
公开(公告)日：2012-02-09
申请号：US12852991
申请日：2010-08-09
申请人： KEITH E. FOGEL , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
发明人： KEITH E. FOGEL , Jeehwan Kim , Harold J. Hovel , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L31/042 , H01L31/18 , H01L31/04
CPC分类号： H01L31/0527 , H01L31/02366 , H01L31/03529 , H01L31/056 , Y02E10/52
摘要： A photovoltaic device and method include a substrate layer having a plurality of structures including peaks and troughs formed therein. A continuous photovoltaic stack is conformally formed over the substrate layer and extends over the peaks and troughs. The photovoltaic stack has a thickness of less than one micron and is configured to transduce incident radiation into current flow.
摘要翻译：光电器件和方法包括具有多个结构的衬底层，包括形成在其中的峰和谷。连续的光伏堆叠保形地形成在衬底层上并且延伸超过峰和谷。光伏堆叠具有小于1微米的厚度，并且被配置为将入射辐射转换成电流。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式