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51. 发明专利

DE19837490A1 Method to measure two-dimensional potential distribution in CMOS semiconductor element and determine two-dimensional doping distribution, uses electron holography to measure phase of electron wave in transmission electron microscope 未知
公开(公告)号：DE19837490A1
公开(公告)日：2000-02-17
申请号：DE19837490
申请日：1998-08-12
申请人： INST HALBLEITERPHYSIK GMBH
发明人： RAU WOLF-DIETER
IPC分类号： G01N23/04 , G01R31/265 , G01R31/307 , H01L21/66 , H01L21/8238 , H01L27/092 , H01L29/00 , G01R29/12
摘要： The method involves using electron holography to measure the phase of an electron wave in a transmission electron microscope. The minimum lateral resolution lies in the surrounding region. A level electron wave (1) is modulated by passing it through a thinned cross-section sample of the semiconductor element to be tested. The modulated image wave (3) is enlarged using an objective lens. The enlarged image wave and an even reference wave (6) are superimposed by electron biprisms (4) to produce electron holograms (7), which are recorded. The phase of the image wave is extracted using Fourier analysis, and the two-dimensional potential distribution is measured from the phase image.

52. 发明专利

DE19652423A1 Silicon-germanium hetero bipolar transistor 未知
公开(公告)号：DE19652423A1
公开(公告)日：1998-06-10
申请号：DE19652423
申请日：1996-12-09
申请人： INST HALBLEITERPHYSIK GMBH
发明人： LIPPERT GUNTHER DR , OSTEN HANS-JOERG PROF DR , HEINEMANN BERND
IPC分类号： H01L21/20 , H01L21/331 , H01L29/161 , H01L29/165 , H01L29/737 , H01L21/205 , H01L21/223
摘要： In a silicon-germanium hetero bipolar transistor (HBT) having a silicon collector layer, a doped silicon-germanium base layer and a silicon emitter layer, the novelty is that an additional electrically inactive material, preferably a group Va element (especially carbon), is incorporated at 10 -10 cm concentration in at least one of the above layers, causing a lattice change of less than 5\*10 . Also claimed is a process for producing the individual epitaxial layers for the above HBT, in which the additional electrically inactive material is supplied during production of the individual layers and in which the base layer is simultaneously doped with impurity (preferably boron) atoms. Preferably, epitaxial layer formation is carried out by CVD or MBE.

53. 发明专利

DE19615291A1 Selective epitaxial growth on structured silicon wafer 未知
公开(公告)号：DE19615291A1
公开(公告)日：1997-10-23
申请号：DE19615291
申请日：1996-04-18
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MUESSIG HANS-JOACHIM , DABROWSKI JAROSLAW
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , C30B29/06 , C30B29/08
摘要： A process for selective epitaxial growth of Si or Si1-xGex on Si wafers, structured with SiO2, involves substituting the Si(113) orientation for the usually used Si(001) substrate orientation so that, during the selective epitaxy, the (113) surfaces are enlarged at the expense of the (001) facet faces and so that the formation of gaps between the epitaxial layers and the SiO2 sidewalls can be avoided.

54. 发明专利

DE19522054C1 Development of germanium quantum wires on silicon@ substrates 未知
公开(公告)号：DE19522054C1
公开(公告)日：1996-11-28
申请号：DE19522054
申请日：1995-06-17
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MUESSIG HANS-JOACHIM , DABROWSKI JAROSLAW
IPC分类号： C30B23/02 , H01L21/20 , H01L21/203 , C30B25/02
摘要： To produce Ge quantum wires on Si substrates for semiconductor components, through a spontaneous organised epitactic growth of Ge nanostructures, an atomically clean Si surface is prepared in ultra-high vacuum, at a pressure of about 10-10 mbar. This is followed by an in-situ deposition of a Si buffer layer. Anisotropic Ge islands are formed on the buffer layer, by vapour deposition, with a substrate temp. of 400-500 deg C. The remaining Si surfaces, free of Ge, are nitrated by NH3 adsorption at 600 deg C. Further Ge vapour deposition gives a selective epitactic growth of the Ge islands until the Ge quantum wires are formed. The Ge quantum wire structures are covered by a further vapour deposition of a Si layer.

55. 发明专利

DE4316754C2 未知
公开(公告)号：DE4316754C2
公开(公告)日：1995-03-16
申请号：DE4316754
申请日：1993-05-19
申请人： INST HALBLEITERPHYSIK GMBH
发明人： GAWORZEWSKI PETER
IPC分类号： B24B7/16 , B24B37/04 , B24B41/06 , G01N1/28 , G01N1/32 , B24B27/00 , H01L21/304 , H01L21/66

56. 发明专利

DE4238749A1 Prodn. of semiconductor fine structure - used to mfr. MOSFETs and MESFETs 未知
公开(公告)号：DE4238749A1
公开(公告)日：1994-05-19
申请号：DE4238749
申请日：1992-11-17
申请人： INST HALBLEITERPHYSIK GMBH
发明人： TEMMLER DIETMAR DR ING , WINKLER WOLFGANG DR ING , ERZGRAEBER HEIDE DR ING , RITTER GEORG DR RER NAT , WOLFF ANDRE DIPL ING , BLUM KATRIN DIPL CHEM , SCHNEIDER HARTMUT , HEINEMANN BERND DIPL PHYS
IPC分类号： H01L21/336 , H01L21/8242 , H01L29/78 , H01L27/108 , H01L21/72 , H01L29/784 , H01L29/804
摘要： Prodn. of a semiconductor fine structure comprises (a) depositing a Si3N4 layer (2) on substrate (1), pref. single crystalline Si and then a layer (3) of material type A and B; (b) depositing on the uppermost layer of type A a sacrificial layer (4) and structuring; (c) depositing a nucleus layer (5) onto the substrate (1); (d) removing the layer (5); (e) removing small nucleii by isotropic etching; (f) anisotropically A-type etching, highly selective to nucleus (5) and B-type layer to convert the structure to uppermost A-type layer; (g) isotropically depositing 1st laterally reinforcing A-type layer with thickness of not more than etched A-type layer and anisotropically A-type etching; (h) further reinforcing the nucleus structures; (i) anisotropically etching the semiconductor substrate after exposing the substrate surface; (j) cleaning the relief made of columns (6) formed in the substrate and depositing a thin Si3N4 layer (7); (k) producing highly-doped regions (8a, 8b) in the horizontal semiconductor surface regions; (l) removing the columns (6); (m) oxidising the highly-doped regions (8) between the columns (6); (n) removing the vertical parts of the Si3N4 layer (7); and (o) forming an intermediate layer (9) corresponding to DE4235152. USE - To mfr. MOSFETs, JFETs and MESFETs, photodiodes, integrated capacitors and MODFETs.

57. 发明专利

DE4200560A1 CCD sensor matrix for ionising radiation - has conductive connection of flat doping zone, controlling first stage potential, formed by potential separating regions 未知
公开(公告)号：DE4200560A1
公开(公告)日：1993-07-15
申请号：DE4200560
申请日：1992-01-09
申请人： INST HALBLEITERPHYSIK GMBH , FORSCHUNGSZENTRUM JUELICH GMBH
发明人： PIERSCHEL MICHAEL DIPL ING , EHWALD KARL-ERNST DIPL PHYS , HEINEMANN BERND DIPL PHYS , SCHROEDER OLIVER DIPL PHYS , SCHMITZ THOMAS DIPL ING
IPC分类号： H01L27/148
摘要： In the sensor, no deep-reaching channel stopper regions exist in the sensitive region, and large surface portions of a matrix cell do not have conductive gate layers. The remaining cell surface is controlled by a very thin metal gate film. Thus the cover layer extension is minimised and the generation active region depth is limited. The drain channels for parasitically generated charges and the overflow regions for excessive charge carriers are integrated. Due to very thin cover films, the ionising particles can be detected using negligible energy. Degradation effects are reduced by trimming the depth of the generation active region. USE/ADVANTAGE - E.g. for videos applications and optical radiation measuring appts., without degradation tendency, crystal interference, and with relatively small chip surface.

58. 发明专利

DE4414323C2 未知
公开(公告)号：DE4414323C2
公开(公告)日：2003-04-17
申请号：DE4414323
申请日：1994-04-25
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MEHR WOLFGANG , WOLFF ANDRE
IPC分类号： H01J1/304

59. 发明专利

DE10021273A1 未知
公开(公告)号：DE10021273A1
公开(公告)日：2001-10-31
申请号：DE10021273
申请日：2000-04-26
申请人： INST HALBLEITERPHYSIK GMBH
发明人： HERZEL FRANK , WEGER PETER
IPC分类号： H03B1/00 , H03B5/12 , H03K3/354 , H03L7/099 , H03B5/14
摘要： A voltage-controlled oscillator device with an LC-resonant circuit, in particular for implementing integrated voltage-controlled oscillators for the lower GHz range, is disclosed. The device achieves continuous frequency tunability in a wide range in particular with a low level of phase noise and phase jitter. In the voltage-controlled oscillator, a second inductor can be periodically switched in parallel and/or in series with at least one first inductor of the LC-resonant circuit by way of a switching means actuated with the oscillator frequency. A control input of the switching means is connected to a variable dc voltage. In that respect the relationship of the duration of the conducting state and the duration of the non-conducting state of the switching means is variable within an oscillation period of the oscillator in dependence on the value of the control voltage. In accordance with the relationship of the duration of the conducting state and the duration of the non-conducting state of the switching means within an oscillation period of the oscillator the time-averaged effective inductance is variable in dependence on the value of the control voltage.

60. 发明专利

DE10005405A1 Layer stack used for a silicon-based pnp hetero bipolar transistor in integrated circuits comprises a p-conducting doped collector layer separated from a p-conducting emitter layer by a n-conducting base layer 未知
公开(公告)号：DE10005405A1
公开(公告)日：2001-08-09
申请号：DE10005405
申请日：2000-02-04
申请人： INST HALBLEITERPHYSIK GMBH
发明人： OSTEN HANS JOERG
IPC分类号： H01L29/165 , H01L29/24 , H01L29/737
摘要： Layer stack comprises a p-conducting doped collector layer (1) made of silicon separated from a p-conducting emitter layer (2) made of silicon by a n-conducting base layer (3) made of silicon modified by impurity atoms whose band gap is smaller than that of silicon. The band offset to silicon is in the conducting band. Preferred Features: The base layer is modified by inserting carbon atoms into the silicon lattice. The concentration of the carbon atoms is 0.1-5 at.%.

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