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51. 发明授权

US08252639B2 Thin film transistor array panel and method for manufacturing the same 失效
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08252639B2
公开(公告)日：2012-08-28
申请号：US12951981
申请日：2010-11-22
申请人： Je-Hun Lee , Beom-Seok Cho , Chang-Oh Jeong , Joo-Han Kim
发明人： Je-Hun Lee , Beom-Seok Cho , Chang-Oh Jeong , Joo-Han Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , H01L27/1288 , H01L29/12 , H01L29/458
摘要： The present invention provides a thin film transistor array panel comprising: an insulating substrate; a gate line formed on the insulating substrate and having a gate electrode; a gate insulating layer formed on the gate line; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; diffusion barriers formed on the semiconductor and containing nitrogen; a data line crossing the gate line and having a source electrode partially contacting the diffusion barriers; a drain electrode partially contacting the diffusion barriers and facing the source electrode on the gate electrode; and a pixel electrode electrically connected to the drain electrode.
摘要翻译：本发明提供一种薄膜晶体管阵列板，包括：绝缘基板; 形成在所述绝缘基板上并具有栅电极的栅极线; 栅极绝缘层，形成在栅极线上; 形成在所述栅极绝缘层上且与所述栅电极重叠的半导体; 在半导体上形成并含有氮的扩散阻挡层; 跨越栅极线并且具有部分地接触扩散阻挡层的源电极的数据线; 漏电极部分地接触扩散阻挡层并面对栅电极上的源电极; 以及电连接到漏电极的像素电极。

52. 发明申请

US20120112346A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20120112346A1
公开(公告)日：2012-05-10
申请号：US13193413
申请日：2011-07-28
申请人： Hong Long NING , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
发明人： Hong Long NING , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
IPC分类号： H01L23/532 , B82Y40/00 , B82Y20/00 , H01L21/768
CPC分类号： H01L29/458 , B82Y10/00 , B82Y30/00 , H01L21/76877 , H01L27/124 , H01L29/41733 , H01L29/78684 , H01L51/0048 , H01L2221/1094
摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.
摘要翻译：提供一种薄膜晶体管（TFT）基板及其制造方法。该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

53. 发明申请

US20120052638A1 METHOD OF FABRICATING THIN-FILM TRANSISTOR SUBSTRATE 有权
标题翻译：薄膜晶体管基板的制作方法
公开(公告)号：US20120052638A1
公开(公告)日：2012-03-01
申请号：US13191833
申请日：2011-07-27
申请人： Hyung-Jun KIM , Chang-Oh JEONG , Il-Yong YOON
发明人： Hyung-Jun KIM , Chang-Oh JEONG , Il-Yong YOON
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L21/02675 , H01L21/02678 , H01L27/1229 , H01L27/1274 , H01L29/66765 , H01L29/78696
摘要： A method of fabricating a thin-film transistor (TFT) substrate includes forming a gate electrode on a substrate; forming an insulating film on the gate electrode; forming an amorphous semiconductor pattern on the insulating film; and forming a source electrode separated from a drain electrode on the amorphous semiconductor pattern; forming a light-concentrating layer, which includes a protrusion, on the amorphous semiconductor pattern, the source electrode, and the drain electrode; and crystallizing at least part of the amorphous semiconductor pattern by irradiating light to the protrusion of the light-concentrating layer.
摘要翻译：制造薄膜晶体管（TFT）基板的方法包括在基板上形成栅电极; 在栅电极上形成绝缘膜; 在所述绝缘膜上形成非晶半导体图案; 以及形成与所述非晶半导体图案上的漏电极分离的源电极; 在所述非晶半导体图案，所述源电极和所述漏电极上形成包括突起的聚光层; 以及通过向所述聚光层的所述突起照射光而使所述非晶半导体图案的至少一部分结晶。

54. 发明授权

US08077268B2 Thin film transistor substrate and method of manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08077268B2
公开(公告)日：2011-12-13
申请号：US12140655
申请日：2008-06-17
申请人： Eun-Guk Lee , Chang-Oh Jeong , Je-Hun Lee , Do-Hyun Kim , Soon-Kwon Lim
发明人： Eun-Guk Lee , Chang-Oh Jeong , Je-Hun Lee , Do-Hyun Kim , Soon-Kwon Lim
IPC分类号： G02F1/13
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A thin film transistor array substrate comprising a base substrate, a first wire on the base substrate, a first insulating layer on the base substrate to cover the first wire, a semiconductor layer on the first insulating layer, a second insulating layer on the first insulating layer on which the semiconductor layer is formed, and a second wire on the second insulating layer on the second insulating layer is provided, and a portion of the second wire makes contact with the semiconductor layer through the contact hole.
摘要翻译：一种薄膜晶体管阵列基板，包括基底基板，在基底基板上的第一布线，在基底基板上覆盖第一布线的第一绝缘层，第一绝缘层上的半导体层，第一绝缘层上的第二绝缘层设置有半导体层的层，第二绝缘层上的第二绝缘层上的第二布线，第二布线的一部分通过接触孔与半导体层接触。

55. 发明申请

US20110285951A1 CNT COMPOSITION, CNT LAYER STRUCTURE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD OF PREPARING CNT LAYER STRUCTURE, AND METHOD OF PREPARING LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译： CNT组合物，CNT层结构，液晶显示装置，制备CNT层结构的方法和制备液晶显示装置的方法
公开(公告)号：US20110285951A1
公开(公告)日：2011-11-24
申请号：US12897198
申请日：2010-10-04
申请人： Seon-mi YOON , Honglong NING , Chang-oh JEONG , Jae-young CHOI , Won-mook CHOI , Hyeon-jin SHIN
发明人： Seon-mi YOON , Honglong NING , Chang-oh JEONG , Jae-young CHOI , Won-mook CHOI , Hyeon-jin SHIN
IPC分类号： G02F1/1343 , B05D5/06 , H01B1/04 , B82Y20/00
CPC分类号： G02F1/13439 , B82Y10/00 , B82Y30/00 , C08L33/02 , Y10T428/1064
摘要： A carbon nanotube (“CNT”) composition includes CNTs, a dispersing agent containing a reactive functional group, and at least one kind of dispersion medium. A CNT layer structure includes a substrate and a CNT layer disposed on the substrate, the CNT layer including the CNT composition including the CNTs arranged in a network-shape, and an organic material adsorbed to the CNTs and chemically bonded to the substrate. A liquid crystal display device includes the CNT layer structure. A method of manufacturing the CNT layer structure uses the CNT composition. A method of manufacturing the liquid crystal display device includes forming a pixel electrode on a passivation layer, by using the method of manufacturing the CNT layer structure.
摘要翻译：碳纳米管（“CNT”）组合物包括CNT，含有反应性官能团的分散剂和至少一种分散介质。 CNT层结构包括基板和设置在基板上的CNT层，CNT层包括CNT网络形状的碳纳米管组合物，以及吸附在CNT上的化学键合到基板上的有机材料。液晶显示装置包括CNT层结构。制造CNT层结构的方法使用CNT组合物。制造液晶显示装置的方法包括：通过使用CNT层结构的制造方法，在钝化层上形成像素电极。

56. 发明授权

US08058114B2 Method of manufacturing the array substrate capable of decreasing a line resistance 有权
标题翻译：能够降低线电阻的阵列基板的制造方法
公开(公告)号：US08058114B2
公开(公告)日：2011-11-15
申请号：US12797527
申请日：2010-06-09
申请人： Jang-Soo Kim , Hong-Long Ning , Bong-Kyun Kim , Hong-Sick Park , Shi-Yul Kim , Chang-Oh Jeong , Sang-Gab Kim , Jae-Hyoung Youn , Woo-Geun Lee , Yang-Ho Bae , Pil-Sang Yun , Jong-Hyun Choung , Sun-Young Hong , Ki-Won Kim , Byeong-Jin Lee , Young-Wook Lee , Jong-In Kim , Byeong-Beom Kim , Nam-Seok Suh
发明人： Jang-Soo Kim , Hong-Long Ning , Bong-Kyun Kim , Hong-Sick Park , Shi-Yul Kim , Chang-Oh Jeong , Sang-Gab Kim , Jae-Hyoung Youn , Woo-Geun Lee , Yang-Ho Bae , Pil-Sang Yun , Jong-Hyun Choung , Sun-Young Hong , Ki-Won Kim , Byeong-Jin Lee , Young-Wook Lee , Jong-In Kim , Byeong-Beom Kim , Nam-Seok Suh
IPC分类号： H01L21/84 , H01L21/336
CPC分类号： G02F1/13458 , G02F1/136286 , G02F2001/136295 , H01L27/1218 , H01L27/124 , H01L27/1288
摘要： A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
摘要翻译：栅极线包括形成在基底基板上的第一籽晶层和形成在第一籽晶层上的第一金属层。在基底基板上形成第一绝缘层。在基底基板上形成第二绝缘层。这里，在与栅极线交叉的方向上通过第二绝缘层形成线沟槽。数据线包括形成在线沟槽下方的第二晶种层和形成在线沟槽中的第二金属层。像素电极形成在基底基板的像素区域中。因此，使用绝缘层形成预定深度的沟槽，并且通过电镀方法形成金属层，从而可以形成具有足够厚度的金属线。

57. 发明授权

US07998786B2 Method of manufacturing a TFT array panel 有权
标题翻译：制造TFT阵列面板的方法
公开(公告)号：US07998786B2
公开(公告)日：2011-08-16
申请号：US12369839
申请日：2009-02-12
申请人： Je-Hun Lee , Jae-Kyeong Lee , Chang-Oh Jeong , Beom-Seok Cho
发明人： Je-Hun Lee , Jae-Kyeong Lee , Chang-Oh Jeong , Beom-Seok Cho
IPC分类号： H01L21/00
CPC分类号： H01L29/66765 , H01L27/12 , H01L29/458 , H01L29/4908
摘要： Multi-layered wiring for a larger flat panel display is formed by depositing molybdenum on a substrate in presence of a precursor gas containing at least one oxygen, nitrogen and carbon to form a molybdenum layer. An aluminum layer is deposited on the molybdenum layer. Another metal layer may be formed on the aluminum layer. The molybdenum layer has a face-centered cubic (FCC) lattice structure with a preferred orientation of (111).
摘要翻译：在含有至少一个氧，氮和碳的前体气体的存在下，在基板上沉积钼以形成钼层，形成用于较大平板显示器的多层布线。铝层沉积在钼层上。可以在铝层上形成另一金属层。钼层具有面心立方（FCC）晶格结构，其优选取向为（111）。

58. 发明申请

US20110114940A1 THIN FILM DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜显示面板及其制造方法
公开(公告)号：US20110114940A1
公开(公告)日：2011-05-19
申请号：US12818047
申请日：2010-06-17
申请人： Do-Hyun Kim , Kyoung-Jae Chung , Seung-Ha Choi , Dong-Hoon Lee , Chang-Oh Jeong , Suk-Won Jung
发明人： Do-Hyun Kim , Kyoung-Jae Chung , Seung-Ha Choi , Dong-Hoon Lee , Chang-Oh Jeong , Suk-Won Jung
IPC分类号： H01L29/786 , H01L21/36
CPC分类号： H01L27/1225 , H01L21/02554 , H01L21/02565 , H01L21/02664 , H01L27/1214 , H01L27/124 , H01L27/1288 , H01L27/3262
摘要： A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer disposed on the gate line; an semiconductive oxide layer disposed on the gate insulating layer; a data line disposed on the semiconductive oxide layer and including a source electrode; a drain electrode facing the source electrode on the semiconductive oxide layer; and a passivation layer disposed on the data line. The semiconductive oxide layer is patterned with chlorine (Cl) containing gas which alters relative atomic concentrations of primary semiconductive characteristic-providing elements of the semiconductive oxide layer at least at a portion where a transistor channel region is defined.
摘要翻译：薄膜晶体管阵列面板包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 设置在栅极线上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体氧化物层; 数据线，设置在所述半导体氧化物层上并包括源电极; 在半导体氧化物层上面对源电极的漏电极; 以及设置在数据线上的钝化层。至少在限定了晶体管沟道区域的部分，半导体氧化物层用含氯（Cl）的气体构图，该气体改变半导体氧化物层的初级半导体特性提供元件的相对原子浓度。

59. 发明申请

US20110068340A1 Thin Film Transistor Array Panel and Method for Manufacturing the Same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20110068340A1
公开(公告)日：2011-03-24
申请号：US12652379
申请日：2010-01-05
申请人： Dong-Hoon Lee , Do-Hyun Kim , Chang-Oh Jeong , O-Sung Seo , Xin-Xing Li
发明人： Dong-Hoon Lee , Do-Hyun Kim , Chang-Oh Jeong , O-Sung Seo , Xin-Xing Li
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L27/124 , H01L29/78618
摘要： A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode.
摘要翻译：薄膜晶体管阵列面板包括绝缘基板。在绝缘基板上形成栅极线，并具有栅电极。在栅极线上形成栅极绝缘层。半导体层形成在栅极绝缘层上并与栅电极重叠。在半导体层上形成扩散阻挡层并含有氮。数据线与栅极线交叉，并且具有部分地接触扩散阻挡层的源电极和部分地接触扩散阻挡层并面向源电极的漏电极。漏电极在栅电极上。像素电极电连接到漏电极。

60. 发明授权

US07863607B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07863607B2
公开(公告)日：2011-01-04
申请号：US11980871
申请日：2007-10-30
申请人： Je-Hun Lee , Do-Hyun Kim , Chang-Oh Jeong
发明人： Je-Hun Lee , Do-Hyun Kim , Chang-Oh Jeong
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225
摘要： The disclosed thin film transistor array panel includes an insulating substrate, a channel layer including an oxide formed on the insulating substrate. A gate insulating is layer formed on the channel layer and a gate electrode is formed on the gate insulating layer. An interlayer insulating layer is formed on the gate electrode and a data line formed on the interlayer insulating layer and includes a source electrode, wherein the data line is made of a first conductive layer and a second conductive layer. A drain electrode formed on the interlayer insulating layer, and includes the first conductive layer and the second conductive layer. A pixel electrode extends from the first conductive layer of the drain electrode and a passivation layer formed on the data line and the drain electrode. A spacer formed on the passivation layer.
摘要翻译：所公开的薄膜晶体管阵列面板包括绝缘基板，包括形成在绝缘基板上的氧化物的沟道层。栅极绝缘层是在沟道层上形成的层，栅电极形成在栅极绝缘层上。在栅电极上形成层间绝缘层，形成在层间绝缘层上的数据线，包括源电极，其中数据线由第一导电层和第二导电层构成。一种形成在层间绝缘层上的漏极，包括第一导电层和第二导电层。像素电极从漏电极的第一导电层和形成在数据线和漏电极上的钝化层延伸。形成在钝化层上的间隔物。

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