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51. 发明授权

US08158911B2 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和延伸部件
公开(公告)号：US08158911B2
公开(公告)日：2012-04-17
申请号：US12213825
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67109 , F27B17/0025 , H05B3/62
摘要： A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.
摘要翻译：一种加热装置，包括以片状形式设置的加热元件，并且具有设置在其中的凹口或通孔，由导电材料制成并被设置为围绕和限定加热空间的侧壁构件，以及设置在加热空间侧的保持构件侧壁构件用于在一端保持加热元件。另外，还设置有延伸部件，每个部件包括一个延伸部分，该延伸部分布置成从侧壁部件的加热空间侧突出，并且延伸穿过加热元件中的凹口或两端之间的通孔，以及突出部分所述加热元件的两个前后两侧沿着与所述延伸部分的延伸方向正交的方向从所述延伸部分延伸，从而抑制所述加热元件沿所述延伸方向的位移。

52. 发明申请

US20090029486A1 Substrate Processing Apparatus and Substrate Processing Method 有权
标题翻译：基板加工装置及基板加工方法
公开(公告)号：US20090029486A1
公开(公告)日：2009-01-29
申请号：US12087479
申请日：2007-02-21
申请人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
发明人： Masaaki Ueno , Masakazu Shimada , Takeo Hanashima , Haruo Morikawa , Akira Hayashida
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/46 , H01L21/67248
摘要： A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion.
摘要翻译：基板处理装置具有：处理基板的处理室; 加热装置，其从基板的外周侧光学加热容纳在处理室中的基板; 冷却装置，其通过使由加热装置光学加热的基板的外周附近的流体流动来冷却基板的外周侧; 温度检测部，其检测处理室内的温度; 以及加热控制部，其以这样的方式控制加热装置和冷却装置，以在基板的中心部分和基板的端部之间提供温度差，同时将中心部分处的温度保持在预先根据由温度检测部分检测的温度确定温度。

53. 发明申请

US20090014428A1 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member 有权
标题翻译：加热装置，采用该加热装置的基板处理装置，制造半导体装置的方法和延伸部件
公开(公告)号：US20090014428A1
公开(公告)日：2009-01-15
申请号：US12213825
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F27B5/14 , H05B3/00
CPC分类号： H01L21/67109 , F27B17/0025 , H05B3/62
摘要： A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction.
摘要翻译：一种加热装置，包括以片状形式设置的加热元件，并且具有设置在其中的凹口或通孔，由导电材料制成并被设置为围绕和限定加热空间的侧壁构件，以及设置在加热空间侧的保持构件侧壁构件用于在一端保持加热元件。另外，还设置有延伸部件，每个部件包括一个延伸部分，该延伸部分布置成从侧壁部件的加热空间侧突出，并且延伸穿过加热元件中的凹口或两端之间的通孔，以及突出部分所述加热元件的两个前后两侧沿着与所述延伸部分的延伸方向正交的方向从所述延伸部分延伸，从而抑制所述加热元件沿所述延伸方向的位移。

54. 发明申请

US20080182345A1 Substrate processing method and semiconductor manufacturing apparatus 有权
标题翻译：基板加工方法和半导体制造装置
公开(公告)号：US20080182345A1
公开(公告)日：2008-07-31
申请号：US12010274
申请日：2008-01-23
申请人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
发明人： Masashi Sugishita , Masaaki Ueno , Akira Hayashida
IPC分类号： H01L21/66 , B05C11/02
CPC分类号： H01L22/20 , H01L2924/0002 , Y10S438/905 , H01L2924/00
摘要： A semiconductor manufacturing apparatus and substrate processing method is provided with which the film formed on a substrate can be controlled in thickness and quality. The substrate processing method includes a step of acquiring a measurement value based on a first detecting section for detecting a state of a peripheral edge of a substrate and a measurement value based on a second detecting section for detecting a state of a center of the substrate and determining a first difference between the measurement value based on the first detecting section and the measurement value based on the second detecting section, comparing between a previously stored second difference between a measurement value concerning the first detecting section and a measurement value concerning the second detecting section with the first difference between the measurement value based on the first detecting section and the measurement value based on the second detecting section, calculating a correction value for a pressure in a cooling-gas passage provided between a process chamber for processing the substrate and a heating device depending upon the first difference when the first difference is different from the second difference, and correcting the pressure value based on the pressure correction value, anda step of processing the substrate by flowing a cooling gas through the cooling-gas passage by means of a cooling device while heating the process chamber by the heating device, and placing the heating device and the cooling device under control of a control section depending upon a pressure value corrected.
摘要翻译：提供了一种半导体制造装置和基板处理方法，其可以控制在基板上形成的膜的厚度和质量。基板处理方法包括基于用于检测基板的周缘的状态的第一检测部和基于用于检测基板的中心的状态的第二检测部的测量值来获取测量值的步骤，以及基于第二检测部分确定基于第一检测部分的测量值和测量值之间的第一差异，将先前存储的关于第一检测部分的测量值和与第二检测部分相关的测量值之间的第二差值进行比较基于第一检测部分的测量值和基于第二检测部分的测量值之间的第一差异，计算在处理基板的处理室和加热之间设置的冷却气体通道中的压力的校正值设备取决于fi的第一个差异第一差异与第二差异不同，并且基于压力校正值校正压力值，以及通过借助于冷却装置使冷却气体流过冷却气体通道而加热基板的步骤，同时加热处理室通过加热装置，并且根据校正的压力值将加热装置和冷却装置放置在控制部分的控制下。

55. 发明授权

US5837801A Method for preparing crosslinked polycarbodiimides 失效
标题翻译：交联聚碳化二亚胺的制备方法
公开(公告)号：US5837801A
公开(公告)日：1998-11-17
申请号：US759381
申请日：1996-12-04
申请人： Ken Yahata , Hiroshi Miyoshi , Yasuyuki Takiguchi , Yasuyoshi Komoto , Akira Hayashida
发明人： Ken Yahata , Hiroshi Miyoshi , Yasuyuki Takiguchi , Yasuyoshi Komoto , Akira Hayashida
IPC分类号： C04B35/524 , C08G18/02 , C08G73/10 , C08G95/04
CPC分类号： C08G18/025 , C04B35/524
摘要： The method for preparing a crosslinked polycarbodiimide according to the present invention comprises reacting a polydicarbodiimide compound with a compound, which has in a molecule thereof two or more hydroxy or mercapto groups, in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The crosslinked polycarbodiimide obtained according to the method is excellent in heat resistance and mechanical properties.
摘要翻译：根据本发明的制备交联聚碳化二亚胺的方法包括在碱金属或碱土金属的醇盐存在下使聚二碳酰亚胺化合物与分子中具有两个或多个羟基或巯基的化合物金属。根据该方法得到的交联聚碳化二亚胺具有优异的耐热性和机械性能。

56. 发明授权

US5804257A Polysilane compositions 失效
标题翻译：聚硅烷组合物
公开(公告)号：US5804257A
公开(公告)日：1998-09-08
申请号：US466278
申请日：1995-06-06
申请人： Akira Hayashida , Shigeru Mori , Eiichi Tabei
发明人： Akira Hayashida , Shigeru Mori , Eiichi Tabei
IPC分类号： C08K5/10 , C09D183/16 , D06P3/00 , D06P5/20 , G02B5/22 , G03F7/075 , C08K5/101 , B05D3/06
CPC分类号： G03F7/0754 , C08K5/10 , C09D183/16 , D06P3/002 , D06P5/2005 , G02B5/22
摘要： A polysilane composition including a polysilane and a plasticizer can be coated as a thin film having improved mechanical strength and a high photo decomposition rate. A polysilane composition including a polysilane and an ester can be coated as a thin film which is exposed to UV and readily dyed to form a dyed polysilane film.
摘要翻译：可以将包含聚硅烷和增塑剂的聚硅烷组合物涂布为具有改善的机械强度和高分解率的薄膜。可以将包含聚硅烷和酯的聚硅烷组合物作为薄膜进行涂布，所述薄膜暴露于紫外线并易于染色以形成染色的聚硅烷膜。

57. 发明授权

US5750636A Process for the preparation of a high-molecular-weight polycarbodiimide solution 失效
标题翻译：制备高分子量聚碳二亚胺溶液的方法
公开(公告)号：US5750636A
公开(公告)日：1998-05-12
申请号：US658165
申请日：1996-06-04
申请人： Yasuyoshi Komoto , Yasuyuki Takiguchi , Ken Yahata , Akira Hayashida , Minoru Takamizawa
发明人： Yasuyoshi Komoto , Yasuyuki Takiguchi , Ken Yahata , Akira Hayashida , Minoru Takamizawa
IPC分类号： C08G18/00 , C08G18/02 , C08G73/00 , C08G73/10
CPC分类号： C08G73/00 , C08G18/025
摘要： This invention provides a process wherein a stable solution of polycarbodiimide with a number-average molecular-weight of 5,000 to 60,000 can be very easily prepared by using an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) as starting material, a cyclic phosphine oxide as catalyst and a chlorinated aromatic compound as solvent and by controlling certain reaction conditions within the reaction temperature range of 110.degree. to 150.degree. C.
摘要翻译：本发明提供一种方法，其中通过使用有机二异氰酸酯（例如，2,4-甲苯二异氰酸酯或2,6-甲苯二异氰酸酯）可以非常容易地制备数均分子量为5,000至60,000的聚碳化二亚胺的稳定溶液，作为起始原料，作为催化剂的环状氧化膦和氯化芳族化合物作为溶剂，并通过在110℃至150℃的反应温度范围内控制某些反应条件。

58. 发明授权

US5157096A Method and apparatus for preparing organic silazane polymer and method for preparing inorganic fibers 失效
标题翻译：用于制备有机硅烷聚合物的方法和装置及其制备无机纤维的方法
公开(公告)号：US5157096A
公开(公告)日：1992-10-20
申请号：US554129
申请日：1990-07-17
申请人： Yoshio Hasegawa , Minoru Takamizawa , Akira Hayashida , Yoshihumi Takeda
发明人： Yoshio Hasegawa , Minoru Takamizawa , Akira Hayashida , Yoshihumi Takeda
IPC分类号： C04B35/589 , C08G77/62
CPC分类号： C08G77/62 , C04B35/589
摘要： An organic silazane polymer is prepared by passing a silazane compound in por form through a hollow tube heated at 400.degree. to 700.degree. C. for activation and thermally polymerizing the silazane compound in a liquid phase. Inorganic fibers can be prepared from the organic silazane polymer by melt spinning, infusibilizing, and sintering. An apparatus for preparing an organic silazane polymer is also provided, comprising a heated reactor vessel for evaporating and thermally polymerizing a silazane compound, a heated hollow tube in flow communication with said reactor vessel for receiving the silazane compound vapor and heating it at 400.degree. to 700.degree. C. for activation, and a conduit, with a condenser for condensing the vapor, for feeding the condensed silazane compound back to the reactor.

59. 发明授权

US5145813A Process for manufacturing organic silazane polymers and ceramics therefrom 失效
标题翻译：从其制造有机硅氮烷聚合物和陶瓷的方法
公开(公告)号：US5145813A
公开(公告)日：1992-09-08
申请号：US527109
申请日：1990-05-22
申请人： Yoshifumi Takeda , Minoru Takamizawa , Tsutomu Takeno , Akira Hayashida
发明人： Yoshifumi Takeda , Minoru Takamizawa , Tsutomu Takeno , Akira Hayashida
IPC分类号： C04B35/571 , C04B35/589 , C08G77/62
CPC分类号： C08G77/62 , C04B35/571 , C04B35/589
摘要： A process for manufacturing an organic silazane polymer which comprises: reacting ammonia with a mixture of organosilicic compounds (I) and (II) wherein R is a methyl group, an ethyl group, or a phenyl group, and R.sub.1 is a hydrogen atom or a vinyl group, and X is a chlorine or a bromine atom; then polymerizing the thus obtained silazane compound in the presence of an alkali catalyst. A process for manufacturing a ceramic fiber which comprises melting, spinning, and rendering the organic silazane polymer infusible and then baking the same is also disclosed, as are improved silazane polymers and ceramic articles made therefrom ##STR1##
摘要翻译：一种制备有机硅氮烷聚合物的方法，其包括：使氨与有机硅化合物（I）和（II）的混合物反应，其中R是甲基，乙基或苯基，R 1是氢原子或乙烯基，X是氯或溴原子; 然后在碱催化剂的存在下使得到的硅氮烷化合物聚合。还公开了一种制造陶瓷纤维的方法，其包括熔融，纺丝和使无机的有机硅氮烷聚合物然后烘烤该陶瓷纤维，以及由其制备的改进的硅氮烷聚合物和陶瓷制品。（I））

60. 发明授权

US5128430A Preparation of polysilanes 失效
标题翻译：聚硅烷的制备
公开(公告)号：US5128430A
公开(公告)日：1992-07-07
申请号：US794979
申请日：1991-11-20
申请人： Eiichi Tabei , Motoo Fukushima , Yoshinori Hida , Akira Hayashida , Shigeru Mori
发明人： Eiichi Tabei , Motoo Fukushima , Yoshinori Hida , Akira Hayashida , Shigeru Mori
IPC分类号： C08G77/48 , C08G77/60
CPC分类号： C08G77/60
摘要： Polysilanes are produced by reacting dihalosilanes in the presence of alkali metals, By carrying out the dihalosilane reaction in the presence of copper halide catalysts at temperatures of at least 100.degree. C., higher molecular weight polysilanes are obtained in acceptable yields.
摘要翻译：聚硅烷通过在碱金属的存在下使二卤代硅烷反应来制备。通过在卤化铜催化剂存在下，在至少100℃的温度下进行二氯硅烷反应，得到较高分子量的聚硅烷以可接受的产率。

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