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51. 发明授权

EP1145296B1 SEMICONDUCTOR WAFER MANUFACTURING METHOD 有权
标题翻译：半导体晶片的方法
公开(公告)号：EP1145296B1
公开(公告)日：2008-10-29
申请号：EP99970208.7
申请日：1999-09-29
申请人： SUMCO CORPORATION
发明人： Hashii, Tomohiro , Onizaki, Kazunori , Masuda, Sumihisa
IPC分类号： H01L21/304
CPC分类号： H01L21/02008 , B24B1/00 , B24B7/17 , B24B9/065 , B24B37/08 , Y10S438/928
摘要： The present invention is a novel high-precision semiconductor wafer manufacturing method, which attempts to achieve a high-precision wafer by incorporating a low-deformation grinding process. It enables total materials costs to be reduced, and realizes the high degree of flatness and low process deformation required, by large-diameter wafers in particular. Thus making it possible to improve yields in the device process. The present invention makes it possible to achieve a high degree of flatness, and low process deformation. It helps to improve yields in the device process by performing a surface grinding process, of a variety of processes on a sliced semiconductor wafer. Thereafter applying an edge-rounding portion mirror finishing process, of a variety of processes for mirror finishing with low deformation. Finally, it implements a process, which mirror finish polishes a required main side of an edge-rounded wafer.

52. 发明公开

EP1968102A2 Method of evaluation of bonded wafer 有权
标题翻译： Verfahren zur Bewertung eines gebondeten晶圆
公开(公告)号：EP1968102A2
公开(公告)日：2008-09-10
申请号：EP08003037.2
申请日：2008-02-19
申请人： SUMCO CORPORATION
发明人： Murakami, Satoshi , Morimoto, Nobuyuki , Motoyama, Tamio
IPC分类号： H01L21/18
CPC分类号： H01L21/187 , H01L22/24
摘要： A bonded wafer formed by directly bonding a wafer for active layer and a wafer for support substrate without an insulating film and thinning the wafer for active layer is evaluated by a method comprising steps of removing native oxide from a surface of an active layer in the bonded wafer, subjecting the bonded wafer to an etching with an etching liquid having an etching rate to a material constituting the wafer faster than that to an oxide of the material to remove at least a whole of the active layer, and detecting island-shaped oxides exposed by the etching, in which the etching is carried out so as to satisfy a relation of T≤X≤ T+500 nm wherein T is a thickness of the active layer (nm) and X is an etching depth (nm) to detect the number and size of the island-shaped oxides.
摘要翻译：通过包括以下步骤的方法来评估通过直接粘合用于有源层的晶片和用于支撑衬底的晶片而不具有绝缘膜并且使活性层薄化的晶片形成的键合晶片，其方法包括以下步骤：从键合的有源层的表面去除天然氧化物晶片，对具有对构成晶片的材料具有蚀刻速率的蚀刻液的蚀刻液进行蚀刻，比对该材料的氧化物更快地除去至少整个有源层，并且检测暴露的岛状氧化物通过蚀刻进行蚀刻，以满足T‰¤X‰T + 500nm的关系，其中T是有源层的厚度（nm），X是蚀刻深度（nm）至检测岛状氧化物的数量和大小。

53. 发明授权

EP1456871B1 SUSCEPTOR FOR EPITAXIAL GROWTH 有权
标题翻译：基座外延生长
公开(公告)号：EP1456871B1
公开(公告)日：2008-07-09
申请号：EP02795973.3
申请日：2002-12-23
申请人： SUMCO CORPORATION , Ishibashi, Masayuki , Krueger, John F. , Dohi, Takayuki , Horie, Daizo , Fujikawa, Takashi
发明人： ISHIBASHI, Masayuki , KRUEGER, John F. Sumco USA Corporation , DOHI, Takayuki Sumitomo Mitsubishi Silicon Corp. , HORIE, Daizo Sumitomo Mitsubishi Silicon Corp. , FUJIKAWA, Takashi Sumitomo Mitsubishi Silicon Corp
IPC分类号： H01L21/687 , C23C16/455 , C23C16/458 , C30B25/12 , C30B29/06
CPC分类号： C23C16/45589 , C23C16/4584 , C30B25/12 , C30B29/06 , H01L21/68735 , H01L21/68742
摘要： A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about 1/2 the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2mm2 and the density of the through-holes is 0.25 to 25 per cm2. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

54. 发明公开

EP1755156A3 Process for producing silicon wafers 有权
标题翻译：一种用于制造硅晶片的过程
公开(公告)号：EP1755156A3
公开(公告)日：2008-05-07
申请号：EP06016964.6
申请日：2006-08-14
申请人： SUMCO CORPORATION
发明人： Koyata, Sakae , Hashii, Tomohiro , Murayama, Katsuhiko , Takaishi, Kazushige , Katoh, Takeo
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/6708 , H01L21/02019 , H01L21/30604
摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid : nitric acid : phosphoric acid is 0.5 to 40% : 5 to 50% : 5 to 70%, respectively.

55. 发明公开

EP1906450A1 PROCESS FOR PRODUCING SIMOX SUBSTRATE, AND SIMOX SUBSTRATE PRODUCED BY SAID PROCESS 审中-公开
标题翻译：西班牙ZERO HERSTELLEN EINES SIMOX-SUBSTRATS UND DURCH DEN PROZESS HERGESTELLTES SIMOX-SUBSTRAT
公开(公告)号：EP1906450A1
公开(公告)日：2008-04-02
申请号：EP05765515.1
申请日：2005-07-11
申请人： SUMCO CORPORATION
发明人： ADACHI, Naoshi Sumitomo Mitsubishi Silicon Corp. , KOMATSU, Yukio Sumitomo Mitsubishi Silicon Corp.
IPC分类号： H01L27/12 , H01L21/322
CPC分类号： H01L21/26533 , H01L21/3226 , H01L21/76243
摘要： Heavy metal contamination in a device process can be efficiently trapped in a substrate.
The present invention comprises: a step of implanting oxygen ions into a wafer; a step of performing a first heat treatment to the wafer in a predetermined gas atmosphere at 1300 to 1390°C to form a buried oxide layer and also form an SOI layer on a wafer front surface, the wafer before the oxygen ion implantation having an oxygen concentration of 8x10 17 to 1.8x10 18 atoms/cm 3 (old ASTM), the buried oxide layer being formed over the entire wafer surface, the present invention being characterized by including: a step of performing a second heat treatment to the wafer subjected to the first heat treatment in a predetermined gas atmosphere at 400 to 900°C for 1 to 96 hours to form oxide precipitate nuclei in a bulk layer below a defect aggregate layer formed immediately below the buried oxide layer; and a step of performing a third heat treatment to the wafer subjected to the second heat treatment in a predetermined gas atmosphere at 900 to 1250°C higher than the second heat treatment temperature for 1 to 96 hours to grow the formed oxide precipitate nuclei into oxide precipitates.
摘要翻译：器件工艺中的重金属污染物可以有效地捕获在基片中。本发明包括：将氧离子注入晶片的步骤; 在1300〜1390℃的预定气体气氛中对晶片进行第一次热处理以形成掩埋氧化物层，并且在晶片前表面上形成SOI层的步骤，在氧离子注入之前具有氧气的晶片浓度为8×10 17至1.8×10 18原子/ cm 3（旧ASTM），掩埋氧化物层形成在整个晶片表面上，本发明的特征在于包括：对经过晶片的晶片进行第二热处理的步骤在400-900℃的预定气体气氛中进行1至96小时的第一次热处理，以在形成在掩埋氧化物层正下方的缺陷聚集体层下面的体层中形成氧化物沉淀核; 以及在比第二热处理温度高900至1250℃的预定气体气氛中对经受第二热处理的晶片进行第一次热处理1至96小时以将所形成的氧化物沉淀核生长成氧化物沉淀。

56. 发明公开

EP1897977A1 METHOD OF GROWING SILICON SINGLE CRYSTAL 有权
标题翻译： VERFAHREN ZUR HERSTELLUNG VON SILICIUMEINKRISTALL
公开(公告)号：EP1897977A1
公开(公告)日：2008-03-12
申请号：EP05811258.2
申请日：2005-12-01
申请人： SUMCO Corporation
发明人： INAMI, Shuichi c/o SUMCO CORPORATION , TAKASE, Nobumitsu c/o SUMCO CORPORATION , KOGURE, Yasuhiro c/o SUMCO CORPORATION , HAMADA, Ken c/o SUMCO CORPORATION , NAKAMURA, Tsuyoshi c/o SUMCO CORPORATION
IPC分类号： C30B29/06 , C30B15/00
CPC分类号： C30B29/06 , C30B15/04 , C30B15/14
摘要： The invention relates to a method for growing a silicon single crystal. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.
摘要翻译：本发明涉及一种生长硅单晶的方法。在晶体生长期间，将热应力施加到至少一部分硅单晶。使用惰性气体和含有氢原子的气态物质的混合气体作为用于生长晶体的气氛气体。

57. 发明公开

EP1840243A3 Susceptor for epitaxial growth and epitaxial growth method 有权
标题翻译：基座和方法，用于外延
公开(公告)号：EP1840243A3
公开(公告)日：2008-02-13
申请号：EP07013771.6
申请日：2002-12-23
申请人： SUMCO Corporation , Ishibashi, Masayuki , Krueger, John F. , Dohi, Takayuki , Horie, Daizo , Fujikawa, Takashi
发明人： Ishibashi, Masayuki, Sumitomo Mitsubishi Corp. , Krueger, John, F., , Dohi, Takayuki, Sumitomo Mitsubishi Silicon Corp. , Horie, Daizo, Sumitomo Mitsubishi Silicon Corp. , Fujikawa, Takashi, Sumitomo Mitsubishi Silicon
IPC分类号： C23C16/458 , H01L21/20
CPC分类号： C23C16/45589 , C23C16/4584 , C30B25/12 , C30B29/06 , H01L21/68735 , H01L21/68742
摘要： A susceptor (10) for use in an epitaxial growth apparatus and method where a plurality of circular through-holes (10b, 10c) are formed in the bottom wall of a pocket (10a) in an outer peripheral region a distance of up to about 1/2 the radius toward the center of Lhe circular bottom wall. The total opening surface area of these through-holes (10a, 10c) is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes (10b, 10c) provided at this outer peripheral region is 0.2 to 3.2 mm 2 and the density of the through-holes (10b, 10c) is 0.25 to 25 per cm 2 , After a semiconductor wafer is mounted in the pocket (10a), epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor (10) and carrier gas is made to flow on the lower surface side.

58. 发明公开

EP1870930A3 Method of producing bonded wafer 审中-公开
标题翻译：生产键合晶圆的方法
公开(公告)号：EP1870930A3
公开(公告)日：2008-01-23
申请号：EP07011061.4
申请日：2007-06-05
申请人： SUMCO Corporation
发明人： Nishihata, Hideki , Morimoto, Nobuyuki , Endo, Akihiko
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/26533
摘要： There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.
摘要翻译：提供了一种通过将用于有源层和支撑层的两个硅晶片彼此键合然后使用于有源层的晶片变薄来制造键合晶片的方法，其中氮离子从晶片表面注入以便形成有源层以形成在键合之前在用于有源层的晶片的内部中形成氮化物层。

59. 发明公开

EP1873823A1 Method of producing bonded wafer 审中-公开
标题翻译： Verfahren zur Herstellung eines gebundenen晶圆
公开(公告)号：EP1873823A1
公开(公告)日：2008-01-02
申请号：EP07012365.8
申请日：2007-06-25
申请人： SUMCO Corporation
发明人： Morimoto, Nobuyuki , Nishihata, Hideki
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254
摘要： A bonded wafer is produced by implanting ions of a light element into a wafer for active layer to a predetermined depth position to form an ion implanted layer, bonding the wafer for active layer to a wafer for support substrate directly or through an insulating film of not more than 50 nm, exfoliating the wafer for active layer at the ion implanted layer and thinning an active layer exposed through the exfoliation to form the active layer having a predetermined thickness, in which the thickness of the active layer before the thinning is not more than 750 nm and an elongation of slip dislocation in a strength test of the wafer for active layer before the bonding is not more than 100 µm at a predetermined thickness.
摘要翻译：通过将光元件的离子注入到用于有源层的晶片到预定深度位置来形成键合晶片，以形成离子注入层，将用于有源层的晶片直接接合到用于支撑衬底的晶片或通过非绝缘膜超过50nm，在离子注入层剥离有源层的晶片，并使通过剥离曝光的活性层变薄以形成具有预定厚度的活性层，其中变薄之前的活性层的厚度不大于 750nm以下，并且在接合前的有源层用晶片的强度试验中，滑动位错的伸长率为规定厚度以上100μm以下。

60. 发明公开

EP1870930A2 Method of producing bonded wafer 审中-公开
标题翻译： Verfahren zur Herstellung eines gebondeten晶圆
公开(公告)号：EP1870930A2
公开(公告)日：2007-12-26
申请号：EP07011061.4
申请日：2007-06-05
申请人： SUMCO Corporation
发明人： Nishihata, Hideki , Morimoto, Nobuyuki , Endo, Akihiko
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/26533
摘要： There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.
摘要翻译：提供了一种通过将用于有源层和支撑层的两个硅晶片彼此接合并然后使用于有源层的晶片的表面注入氮离子的有源层的晶片变薄来形成接合晶片的方法，以形成在接合之前用于有源层的晶片内部的氮化物层。

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