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    • 51. 发明专利
    • SEMICONDUCTOR ARITHMETIC CIRCUIT
    • JPH10257352A
    • 1998-09-25
    • JP8187697
    • 1997-03-15
    • SHIBATA SUNAOOMI TADAHIRO
    • SHIBATA SUNAOOMI TADAHIRO
    • H04N5/14H04N5/208H04N5/21
    • PROBLEM TO BE SOLVED: To enable noise removal, edge enhancement processing and edge detection processing by means of the averaging processing of an image in a simple circuit by adding a first, a second and a third signal voltages to the input terminal of an amplifier circuit by means of a specified procedure. SOLUTION: An N-channel MOS transistor 101 and a P-channel MOS transistor 102 constitute a push-pull amplifier, that is, a CMOS-system source follower circuit 103. An array corresponding to nine pixels is taken out from a two-dimensional photosensor array. A switch 105 is closed, and the pixel value V of a center is inputted to the input terminal 104 of the source follower circuit 103 and peripheral pixel values V1 -V8 are inputted to input gate electrodes 106a-106c. After that, the switch 105 is opened. Then, all the same prescribed values are inputted to the electrode 106. The voltage appears in an output terminal 107 becomes larger, when the pixel value of the center is larger than the peripheral ones and becomes smaller, when it is smaller so as to enhance an edge.
    • 56. 发明专利
    • FEEDBACK CIRCUIT
    • JPH09245110A
    • 1997-09-19
    • JP5659096
    • 1996-03-13
    • OMI TADAHIROSHIBATA SUNAO
    • OMI TADAHIROKOTANI KOJISHIBATA SUNAOTERADA HIRONORI
    • G06G7/60H01L21/8234H01L27/088H03K3/356H03K19/08H03K19/20
    • PROBLEM TO BE SOLVED: To obtain a semiconductor integrated circuit with a hand shaking function with a smaller number of elements and a less chip area by connecting the output of threshold circuit to at least one input electrode in the threshold circuit provided with input electrodes through a floating electrode and a capacity element to decide an output by the potential of the floating electrode. SOLUTION: The circuit is provided with the three input electrodes 104 to 106 of which the capacities to connect to a floating gate 103 are equal and the output of a neuron MOS inverter being a threshold element is connected with the input electrode 104 of the neuron MOS inverter itself through an inverter 107. The potential of the floating gate 103 is a value obtained by averaging the potentials of the input electrodes 104 to 106. Then, as the potential of the input electrode 104 is 0 when the output of the inverter 107 is 0, the potential of the floating gate 103 does not exceed the inverted threshold value of the neuron MOS inverter so that a send-out signal is 0. When the electrodes 104 to 106 become the threshold value, the send-out signal becomes 1.
    • 58. 发明专利
    • ELECTROLYTICALLY IONIZED WATER PRODUCER AND PRODUCTION
    • JPH09150152A
    • 1997-06-10
    • JP31387295
    • 1995-12-01
    • FRONTEC INCOMI TADAHIRO
    • MIMORI KENICHIKASAMA YASUHIKOOMI TADAHIRO
    • C02F1/46
    • PROBLEM TO BE SOLVED: To produce ionized water having necessary quality at a necessary timing in a necessary quantity by measuring the quality of electrolytic ionized water, comparing it with a setting value of the water quality and controlling electric current density of direct current power and/or a voltage with the competed result. SOLUTION: When the quantity of the electrolytic ionized water and the desired value of the water quality are inputted into a system controller 112, signals are transmitted to a raw water introduction means 106, a flow rate control valve 107, and a pump is operated. Thus, a desires quantity of raw water is introduced into an electrolysis bath 101. An anode electrode 103 and a cathode electrode 104 are energized to start electrolysis. The quality of the water introduced from the electrolysis bath 101 is measured by water quality measuring means 109, and the measures valve is sent to the system controller 112. The water quality is compared with the inputted setting value of the water quality value, and the difference is obtained. Based on the difference, optimum electric current density and voltage value are calculated and transmitted to a direct current power feed means 105. Thus, the direct current power with desired electric current density and voltage value is impressed between the anode electrode 103 and the cathode electrode 104.
    • 60. 发明专利
    • SEMICONDUCTOR PRODUCTION SYSTEM AND CLEAN ROOM
    • JPH0964146A
    • 1997-03-07
    • JP22079395
    • 1995-08-29
    • OMI TADAHIRO
    • OMI TADAHIRO
    • F24F7/06H01L21/02H01L21/205H01L21/304H01L21/677H01L21/68
    • PROBLEM TO BE SOLVED: To arrange a room-temperature washer and a semiconductor production device adjacently, and to shorten a substrate transport distance most by reducing the usage and discharge of chemicals and ultrahigh pure water and establishing a washing method, in which the generation of chemical vapor is inhibited. SOLUTION: Washing by ultrahigh pure water containing ozone is conducted, and washing is performed while applying ultrasonic vibrations having frequency from 500kHz to 5MHz by using an HF/H2 O2 /H2 O/surface-active agent solution. Washing by ultrahigh pure water is carried out, chemicals containing a surface- active agent are removed from a substrate surface, a formed oxide film is removed, and the substrate surface is treated with diluted hydrofluoric acid, in which hydrogen is terminated. Rinsing is conducted by ultrahigh pure water. Consequently, the usage and discharge of chemicals and ultrahigh pure water can be reduced, and the generation of chemical vapor can be inhibited. Accordingly, a room-temperature washer 102 for a semiconductor substrate and a semiconductor production device 103 are arranged adjacently, and a substrate transport distance can be most shortened.