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41. 发明授权

US06632517B1 Low field magnetoresistance of intergranular tunneling in field-aligned chromium dioxide powders 失效
标题翻译：场对齐二氧化铬粉末晶间隧道的低场磁阻
公开(公告)号：US06632517B1
公开(公告)日：2003-10-14
申请号：US09934458
申请日：2001-08-21
申请人： Jinke Tang , Jianbiao Dai
发明人： Jinke Tang , Jianbiao Dai
IPC分类号： G11B539
CPC分类号： G01R33/09 , H01F1/408 , H01F10/1936 , H01F41/14 , Y10T428/1121 , Y10T428/1136 , Y10T428/256 , Y10T428/265
摘要： The magnetic and magnetotransport properties of field-aligned single domain half-metallic CrO2 powders have been studied. Needle-shaped nanoparticles of CrO2 have been aligned in a strong magnetic field. The aligned powder sample shows a strong anisotropy along the alignment direction. The conduction mechanism of the aligned CrO2 powder sample has been examined and is consistent with the intergranular spin dependent tunneling. Negative tunneling magnetoresistance (TMR) of about 41% is achieved in a small field in the vicinity of the coercive field at 5 K. The magnetoresistance (MR) versus field curve shows two well-separated narrow peaks at the coercive fields and resembles that of a magnetic tunnel junction. This junction-like MR results from the narrow switching field distribution of the aligned powders. The results suggest that the aligned magnetic CrO2 particles may find novel applications in spin transport structures and devices.
摘要翻译：已经研究了场对齐单畴半金属CrO 2 粉末的磁性和磁性传输特性。已经在强磁场中对准了CrO 2 的针状纳米颗粒。对准的粉末样品沿着取向方向显示出强烈的各向异性。已经检查了对准的CrO 2 粉末样品的传导机理，并且与晶间自旋相关隧道一致。在5K的矫顽磁场附近的小场中实现了大约41％的负隧穿磁阻（TMR）。磁阻（MR）对场曲线显示出在矫顽场上两个分离得很好的窄峰，类似于磁隧道结。这种结状MR由对准的粉末的窄的开关场分布产生。结果表明，对准磁性CrO 2 颗粒可能会在自旋传输结构和器件中发现新的应用。

42. 发明授权

US06299990B1 Ferromagnetic material and magnetic apparatus employing the ferromagnetic material 失效
标题翻译：使用铁磁材料的铁磁材料和磁性装置
公开(公告)号：US06299990B1
公开(公告)日：2001-10-09
申请号：US09375439
申请日：1999-08-17
申请人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
发明人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
IPC分类号： G11B566
CPC分类号： B82Y30/00 , B82B1/00 , B82B3/00 , B82Y15/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3945 , G11B5/3961 , G11B5/3967 , G11B5/49 , G11B5/4984 , G11B2005/0005 , H01F1/0036 , H01F1/0302 , Y10S428/90 , Y10T428/1136 , Y10T428/1193 , Y10T428/32
摘要： A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.
摘要翻译：铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和相同种类的第一原子（或原子团）作为第一原子（11）或与第一原子（11）不同的一种。在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或分子与第三原子或分子之间形成化学键（14），在第一原子或分子与第三原子或分子之间形成化学键（14），在第一和第二原子或分子之间形成第二原子或分子和第三原子或分子，以及不通过第三原子的化学键或电子通路（15），其中所述第三原子或分子由As原子。

43. 发明专利

JP5441005B2 Domain wall motion element and a magnetic random access memory 有权
公开(公告)号：JP5441005B2
公开(公告)日：2014-03-12
申请号：JP2009553377
申请日：2009-01-13
申请人：日本電気株式会社
发明人：延行石綿 , 哲広鈴木 , 則和大嶋 , 聖万永原 , 俊輔深見
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C19/0841 , B82Y25/00 , G11B5/64 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C27/00 , G11C2211/5615 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/11 , Y10T428/1136 , Y10T428/1143

44. 发明专利

JP4623670B2 Memory device 有权
公开(公告)号：JP4623670B2
公开(公告)日：2011-02-02
申请号：JP2006536974
申请日：2004-10-22
申请人：パナソニック株式会社
发明人：浩一小佐野 , 俊作村岡 , 博榊間
IPC分类号： H01L27/10 , G11C11/34 , G11C13/00 , G11C16/02 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , Y10T428/1136 , Y10T428/115
摘要： A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.

45. 发明专利

JPWO2009101827A1 磁壁移動素子及び磁気ランダムアクセスメモリ有权
公开(公告)号：JPWO2009101827A1
公开(公告)日：2011-06-09
申请号：JP2009553377
申请日：2009-01-13
申请人：日本電気株式会社
发明人：石綿　延行 , 延行石綿 , 鈴木　哲広 , 哲広鈴木 , 則和大嶋 , 則和大嶋 , 聖万永原 , 聖万永原 , 俊輔深見 , 俊輔深見
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C19/0841 , B82Y25/00 , G11B5/64 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C27/00 , G11C2211/5615 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/11 , Y10T428/1136 , Y10T428/1143
摘要：磁壁移動素子は、強磁性体膜で形成され磁壁DWを有する磁化記録層10を備える。磁化記録層10は、磁化方向が固定された一組の端部領域11−1、11−2と、その一組の端部領域11−1、11−2の間に挟まれ磁壁DWが移動する中央領域12と、を含む。端部領域11−1、11−2と中央領域12との境界に、磁壁DWがトラップされる第1トラップサイトTS1が形成されている。更に、中央領域12内に、磁壁DWがトラップされる第2トラップサイトTS2が少なくとも1つ形成されている。

46. 发明专利

JP2007533118A A memory device having a variable resistor 有权
公开(公告)号：JP2007533118A
公开(公告)日：2007-11-15
申请号：JP2006536974
申请日：2004-10-22
申请人：松下電器産業株式会社
发明人：浩一小佐野 , 俊作村岡 , 博榊間
IPC分类号： H01L27/10 , G11C11/34 , G11C13/00 , G11C16/02 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , Y10T428/1136 , Y10T428/115
摘要： A thin film storage device includes a first electrode (3), a first variable resistance thin film (2), and a second electrode (1). The first electrode (3) is formed over a surface of a substrate (4). The first variable resistance thin film (2) is formed over a surface of the first electrode (3). The second electrode (1) is formed over a surface of the first variable resistance thin film (2). The first variable resistance thin film (2) comprises a material whose resistance in a bulk state changes in accordance with at least one of a lattice strain and a change of charge-order.

47. 发明授权

KR100270825B1 연자성막 및 이 연자성막을 사용한 MR/인덕티브 복합형 박막자기헤드 失效
标题翻译：软磁膜和MR /感应复合型薄膜磁头使用它
公开(公告)号：KR100270825B1
公开(公告)日：2000-11-01
申请号：KR1019980030305
申请日：1998-07-28
申请人： 알프스 덴키 가부시키가이샤
发明人： 하세가와나오야
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , G11B5/3109 , G11B5/3113 , H01F10/132 , Y10S428/90 , Y10T428/1136
摘要： 막구조의 대부분이 비정질상이며, 원소 M 과 C 가 화학결합을 하고 있는 Co-MTC 계 합금을 하부 코어층 (7) 으로 사용함으로써 고포화 자속밀도, 고비저항, 저자왜정수 및 적절한 이방성자계를 얻을 수 있게 되고, 상기 하부 코어층 (7) 의 코어기능 및 실드기능을 향상시킬 수 있다.

48. 发明授权

KR101046868B1 가변저항을 갖는 박막 메모리 장치 失效
标题翻译： 가변저항을갖는박막메모리장치
公开(公告)号：KR101046868B1
公开(公告)日：2011-07-06
申请号：KR1020067016238
申请日：2004-10-22
申请人： 파나소닉 주식회사
发明人： 오사노고이치 , 무라오카슌사쿠 , 사카키마히로시
IPC分类号： G11C11/14
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/78 , G11C2213/79 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , Y10T428/1136 , Y10T428/115
摘要： 박막 저장장치는 제 1 전극(3), 제 1 가변저항 박막(2), 및 제 2 전극(1)을 포함한다. 제 1 전극(3)은 기판(4)의 표면 위에 형성된다. 제 1 가변저항 박막(2)은 제 1 전극(3)의 표면 위에 형성된다. 제 2 전극(2)은 제 1 가변저항 박막(2)의 표면 위에 형성된다. 제 1 가변저항 박막(2)은 벌크 상태의 저항이 격자 변형 및 충전-배열의 변화 중 적어도 하나에 따라 변하는 물질을 포함한다.
박막, 얀-텔러, 벌크, 격자 변형, 메모리, 저항값
摘要翻译：薄膜存储装置包括第一电极（3），第一可变电阻薄膜（2）和第二电极（1）。第一电极（3）形成在基板（4）的表面上。第一可变电阻薄膜（2）形成在第一电极（3）的表面上。第二电极（1）形成在第一可变电阻薄膜（2）的表面上。第一可变电阻薄膜（2）包括材料，其在体态下的电阻根据晶格应变和电荷顺序的变化中的至少一个而变化。

49. 发明公开

KR1020120134220A 강자성 그래핀 및 그를 구비한 스핀밸브 소자 审中-实审
标题翻译： FERROMAGNETIC GRAPHENE AND SPIN VALVE DEVICE PEROPTING THE SAME
公开(公告)号：KR1020120134220A
公开(公告)日：2012-12-12
申请号：KR1020110052998
申请日：2011-06-01
申请人： 삼성전자주식회사
发明人： 이성훈
IPC分类号： C01B31/02 , H01L43/08 , G01R33/09
CPC分类号： G01R33/093 , B82Y10/00 , B82Y30/00 , G11B5/3903 , G11B5/398 , G11C11/161 , G11C2213/35 , H01F10/005 , H01F10/3281 , H01F41/306 , H01L29/1606 , H01L43/10 , Y10T428/1107 , Y10T428/1136 , C01B32/182 , C01B2204/20
摘要： PURPOSE: Ferromagnetic graphene and a spin valve element including the same are provided to convert a graphene region into a ferromagnetic region and to adjust the ferromagnetism of the ferromagnetic region. CONSTITUTION: Ferromagnetic graphene includes at least one antidot. The antidot is triangular or hexagonal. The hexagonal antidot includes three first sides of pre-determined lengths and three second sides of lengths are shorter than the lengths of the first sides. The first sides and the second sides are alternately arranged. The first sides and the second sides respectively include at least one zigzag edge. The triangular antidot includes a zigzag edge and an arm chair edge at each side. The aperture of the antidot region in the graphene is approximately 20-80%. The graphene includes successively connected first region, second region, and third region, and at least one antidot is respectively formed at the first region and the third region. Ferromagnetism appears in the first region and the third region. The second region is non-ferromagnetic.
摘要翻译：目的：提供铁磁石墨烯和包括其的自旋阀元件以将石墨烯区域转换成铁磁区域并调节铁磁性区域的铁磁性。构成：铁磁石墨烯包括至少一种antidot。解毒剂是三角形或六角形。六角形棘爪包括预定长度的三个第一侧，长度的三个第二侧比第一侧的长度短。第一面和第二面交替排列。第一面和第二面分别包括至少一个之字形边。三角形的蚂蚁包括一个锯齿形边和两边的扶手椅边。石墨烯中的解毒剂区域的孔径约为20-80％。石墨烯包括连续连接的第一区域，第二区域和第三区域，并且在第一区域和第三区域分别形成至少一个解毒剂。铁磁体出现在第一个地区和第三个地区。第二区域是非铁磁性的。

50. 发明授权

KR100331733B1 연자성 막과 이 연자성 막을 이용한 박막자기헤드, 평면형 자기소자 및 필터 失效
标题翻译：软磁膜和薄膜磁头平面磁性元件和使用该软磁膜的过滤器
公开(公告)号：KR100331733B1
公开(公告)日：2002-04-09
申请号：KR1019990018869
申请日：1999-05-25
申请人： 알프스 덴키 가부시키가이샤
发明人： 사사끼요시또 , 나까자와마꼬또 , 하따나이다까시 , 마끼노아끼히로
IPC分类号： H01F10/00
CPC分类号： H01F10/131 , G11B5/3109 , Y10S428/90 , Y10T428/1136
摘要： Fe-M(Zr, Hf, Ta 등)-O 계합금에 Ti를첨가함으로써자왜정수를저감할수 있는연자성막을제공한다. 또한, Ti의첨가량을 0.1 at% 내지 2 at% 정도로하고, 구성원소인 Fe, Hf, O의조성비를적정하게조절함으로써, 자왜정수를저감할수 있음과동시에뛰어난연자기특성을얻을수 있는연자성막을제공한다.

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