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41. 发明公开

EP2009498A1 Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：EP2009498A1
公开(公告)日：2008-12-31
申请号：EP08011701.3
申请日：2008-06-27
申请人： FUJIFILM Corporation
发明人： Tarutani, Shinji , Tsubaki, Hideaki , Wada, Kenji
IPC分类号： G03F7/039 , G03F7/004 , G03F7/075 , G03F7/20
CPC分类号： G03F7/0046 , G03F7/0048 , G03F7/0397 , G03F7/0758 , G03F7/203 , G03F7/2041 , G03F7/70458 , G03F7/70466
摘要： A pattern forming method performs a multiple exposure process, the multiple exposure process comprising: exposing a resist film with actinic rays or radiation a plurality of times, wherein a contact angle of the resist film for water is 75° or more.
摘要翻译：一种图案形成方法进行多重曝光处理，所述多重曝光处理包括：用光化射线或辐射多次曝光抗蚀膜，其中水抗蚀膜的接触角为75°或更大。

42. 发明公开

EP1901339A1 EXPOSURE APPARATUS, EXPOSURE METHOD, DEVICE MANUFACTURING METHOD, AND SYSTEM 审中-公开
标题翻译： BELICHTUNGSVORRICHTUNG，BELICHTUNGSVERFAHREN，BAUELEMENTEHERSTELLUNGSVERFAHREN UND SYSTEM
公开(公告)号：EP1901339A1
公开(公告)日：2008-03-19
申请号：EP06767712.0
申请日：2006-06-30
申请人： NIKON CORPORATION
发明人： ARAI, Masayoshi, NIKON CORPORATION
IPC分类号： H01L21/027 , G03F7/20 , H01S3/00
CPC分类号： G03F7/70458 , G03F7/7005 , G03F7/70525 , G03F7/70558 , G03F7/70575 , G03F7/70625 , H01S3/10069 , H01S3/1055 , H01S3/1394 , H01S3/225 , H01S2301/08
摘要： An exposure apparatus (10) is equipped with a laser unit (16) that emits a laser beam, a memory (51) that stores a first information which shows a relation between a linewidth error of a pattern formed on a wafer and a spectral characteristic of the laser beam emitted from the laser unit, and a main controller (50) that controls the spectral width of the laser beam via a laser controller (16e), based on the first information and on information related to a reticle that is to be used. Main controller (50) performs spectral width control of the laser beam so as to suppress linewidth error, based on the first information and on the information related to the reticle that is to be used.
摘要翻译：曝光装置（10）配备有发射激光束的激光单元（16），存储有表示晶片上形成的图案的线宽误差与光谱特性之间的关系的第一信息的存储器（51）的激光单元发射的激光束的主控制器，以及通过激光控制器（16e）控制激光束的光谱宽度的主控制器（50），基于第一信息和与将要被加工的掩模版有关的信息用过的。主控制器（50）根据第一信息和与要使用的标线相关的信息，进行激光束的光谱宽度控制，以抑制线宽误差。

43. 发明公开

EP1205807A1 Exposure apparatus and exposure method 失效
标题翻译： Belichtungsapparat und Belichtungsverfahren
公开(公告)号：EP1205807A1
公开(公告)日：2002-05-15
申请号：EP02075268.9
申请日：1995-09-05
申请人： CANON KABUSHIKI KAISHA
发明人： Sakai, Fumio
IPC分类号： G03F9/00 , G03F7/22
CPC分类号： G03F9/7003 , G03F7/70425 , G03F7/70433 , G03F7/70458
摘要： An alignment method and apparatus is disclosed wherein, in one exposure process, alignment of a semiconductor substrate (1) may be performed and, while moving the semiconductor substrate in a step-and-repeat manner in relation to shot positions on the semiconductor substrate, a pattern of an original may be printed on the semiconductor substrate at the respective shot position, wherein the one exposure process may be performed while using a plurality of placement data each specifying positions with respect to which the semiconductor substrate is to be positioned during the step-and repeat motion.
摘要翻译：公开了一种排列方法和装置，其中在一个曝光过程中，可以执行半导体衬底（1）的对准，并且在半导体衬底相对于半导体衬底上的镜头位置以重复同步的方式移动半导体衬底时，原稿的图案可以在相应的拍摄位置被印刷在半导体衬底上，其中可以在使用多个放置数据的同时进行一次曝光处理，该多个放置数据在步骤期间指定半导体衬底要被定位的位置并重复运动。

44. 发明公开

EP1195647A1 Surface position detecting method and scanning exposure method using the same 失效
标题翻译：一种用于使用相同的检测表面的位置和扫描曝光方法的方法
公开(公告)号：EP1195647A1
公开(公告)日：2002-04-10
申请号：EP01204135.6
申请日：1997-02-27
申请人： CANON KABUSHIKI KAISHA
发明人： Iwanaga, Takehiko , Yamada, Yuichi , Uzawa, Shigeyuki
IPC分类号： G03F9/00 , G03F7/20 , G01B11/06 , G01B11/00
CPC分类号： G03F9/7026 , G03F7/70358 , G03F7/70458 , G03F9/7034
摘要： A surface position detecting method for detecting a surface position of a surface to be examined, having surface height irregularity, while relatively scanning the surface, is disclosed. The method includes detecting characteristic data related to a surface state at plural measurement positions on the surface, while relatively scanning the surface, and processing the detected characteristic data related to the measurement positions to determine a measurement position for measurement of the surface position in a subsequent surface position detecting process.
摘要翻译：检测方法，用于检测表面的表面位置的表面位置被检查，具有表面高度不规则性，而相对地扫描的表面上，是游离缺失盘。该方法包括检测在所述表面上的多个测量位置有关的表面状态的特征数据，而相对地扫描的表面，并处理在随后的与测量相关的位置，以确定矿的面位置的测量的测量位置的检测到的特征数据表面位置检测处理。

45. 发明公开

EP0895279A1 MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件的制造
公开(公告)号：EP0895279A1
公开(公告)日：1999-02-03
申请号：EP96905009.5
申请日：1996-03-06
申请人： Hitachi, Ltd.
发明人： SATOH, Hidetoshi , NAKAYAMA, Yoshinori , OKUMURA, Masahide , OHTA, Hiroya , SAITOU, Norio
IPC分类号： H01L21/30
CPC分类号： G03F7/70616 , G03F7/70433 , G03F7/70458 , G03F7/70633 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： In a semiconductor circuit device fabricating process in which a reduction image projection exposure apparatus and an electron beam exposure apparatus are in a mixed use in its exposure process, pattern position shift errors for each exposure apparatus are measured and corrected at the time of drawing by means of an electron beam drawing apparatus, thereby enhancing the alignment accuracy.
First, a pattern for measuring position shifts is exposed using a stepper and the electron beam drawing apparatus. Then, the position shift errors are measured using an identical coordinate position measuring device. Accidental errors have been mixed in the measurement result at this time. On account of this, measurement data at a certain point are smoothed by taking a summation average with data on the periphery thereof, thus decreasing influences of the accidental errors. Moreover, by inverting positive or negative signs of the data on the position shift errors, the data are made into correction data. Then, the correction data are stored. When an exposure is performed by the electron beam drawing apparatus with the pattern exposed by the stepper as a reference, the correction data for the two apparatuses are transferred to the electron beam drawing apparatus, the two data are added to detected mark positions, and at positions after the addition, pattern position shifts within a wafer surface are determined. At the time of exposure, the exposure is performed at positions obtained by subtracting the correction data from the determined pattern position shifts. This method makes it possible to correct both position shift errors within the wafer surface due to the stepper and position shift errors due to the electron beam drawing apparatus, thus allowing the alignment accuracy to be enhanced. Also, this result makes it possible to enhance yield for products in the fabricating process.
摘要翻译：在其中曝光过程中混合使用缩小图像投影曝光设备和电子束曝光设备的半导体电路器件制造过程中，每个曝光设备的图案位置偏移误差在绘制时通过手段被测量和校正从而提高了对准精度。首先，使用步进器和电子束绘图装置来曝光用于测量位置偏移的图案。然后，使用相同的坐标位置测量装置来测量位置偏移误差。此时测量结果中的意外错误已经混合在一起。因此，通过对其周边的数据进行求和平均来平滑某个点的测量数据，从而减少偶然误差的影响。此外，通过反转位置偏移误差上的数据的正负符号，数据被制成校正数据。然后，存储校正数据。当通过电子束绘图设备以步进曝光的图案作为参考执行曝光时，两个设备的校正数据被传送到电子束绘图设备，两个数据被添加到检测到的标记位置，并且在在添加之后，确定晶片表面内的图案位置偏移。在曝光时，在通过从所确定的图案位置偏移中减去校正数据而获得的位置处执行曝光。该方法使得可以校正由于步进器引起的晶片表面内的位置偏移误差和由于电子束绘图装置引起的位置偏移误差，从而允许提高对准精度。而且，这个结果可以提高制造过程中产品的产量。

46. 发明公开

EP0702272A1 Exposure apparatus and exposure method 失效
标题翻译： Belichtungsapparat und Belichtungsverfahren
公开(公告)号：EP0702272A1
公开(公告)日：1996-03-20
申请号：EP95306182.7
申请日：1995-09-05
申请人： CANON KABUSHIKI KAISHA
发明人： Sakai, Fumio
IPC分类号： G03F9/00 , G03F7/22
CPC分类号： G03F9/7003 , G03F7/70425 , G03F7/70433 , G03F7/70458
摘要： An alignment method and apparatus is disclosed wherein, in one exposure process, alignment of a semiconductor substrate (1) may be performed and, while moving the semiconductor substrate in a step-and-repeat manner in relation to shot positions on the semiconductor substrate, a pattern of an original may be printed on the semiconductor substrate at the respective shot position, wherein the one exposure process may be performed while using a plurality of placement data each specifying positions with respect to which the semiconductor substrate is to be positioned during the step-and-repeat motion.
摘要翻译：公开了一种排列方法和装置，其中在一个曝光过程中，可以执行半导体衬底（1）的对准，并且在半导体衬底相对于半导体衬底上的镜头位置以重复同步的方式移动半导体衬底时，原稿的图案可以在相应的拍摄位置被印刷在半导体衬底上，其中可以在使用多个放置数据的同时进行一次曝光处理，该多个放置数据在步骤期间指定半导体衬底要被定位的位置并重复运动。

47. 发明申请

WO2015185598A1 METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS BY A DIFFERENTIAL PROCEDURE 审中-公开
标题翻译：通过差分程序确定IC制造工艺参数的方法
公开(公告)号：WO2015185598A1
公开(公告)日：2015-12-10
申请号：PCT/EP2015/062334
申请日：2015-06-03
申请人： ASELTA NANOGRAPHICS
发明人： SAIB, Mohamed , SCHIAVONE, Patrick , FIGUEIRO, Thiago
IPC分类号： G03F7/20
CPC分类号： G03F7/705 , G03F7/70458 , G03F7/70516 , G06F17/5072 , G06F2217/06 , G06F2217/12
摘要： The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.
摘要翻译：本发明公开了一种从第一过程的参数容易地确定第二制造工艺的参数的方法。代表两个过程之间的差异的度量是根据参数的数值计算的，这些参数值可以在校准布局上测量两个过程，或者可以根据布局的预先存在的值或者为通过插值/外推程序进行两个处理。选择度量的数量，使得它们的组合给出了在设计的所有区域中的两个过程之间的差异的精确表示。有利地，度量被计算为目标设计的卷积与核函数和变形函数的化合物的乘积。

48. 发明申请

WO2008025492A1 A METHOD AND A SYSTEM FOR REDUCING OVERLAY ERRORS WITHIN EXPOSURE FIELDS BY APC CONTROL STRATEGIES 审中-公开
标题翻译：用于减少APC控制策略在接触场中的覆盖误差的方法和系统
公开(公告)号：WO2008025492A1
公开(公告)日：2008-03-06
申请号：PCT/EP2007/007453
申请日：2007-08-24
申请人： ADVANCED MICRO DEVICES INC , SELTMANN, Rolf , SCHULZ, Bernd , HEMPEL, Fritjof , SCHULZE, Uwe
发明人： SELTMANN, Rolf , SCHULZ, Bernd , HEMPEL, Fritjof , SCHULZE, Uwe
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70458 , G03F7/70633 , G03F9/7011 , G03F9/7019 , G03F9/7046
摘要： By taking into consideration tool specific distortion signatures and reticle specific placement characteristics in an alignment control system the control quality of sophisticated APC strategies may significantly be enhanced. Respective correction data may be established on the basis of any combinations of tool/reticles and layers to be aligned to each other, which may modify the respective target values of alignment parameters used for controlling the alignment process on the basis of standard overlay measurement data obtained from dedicated overlay marks.
摘要翻译：通过考虑到对准控制系统中的工具特定失真特征和掩模版特定放置特性，可以显着提高复杂APC策略的控制质量。可以基于要彼此对准的工具/掩模版和层的任何组合来建立各自的校正数据，这可以基于获得的标准覆盖测量数据来修改用于控制对准过程的对准参数的各个目标值从专用的重叠标记。

49. 发明申请

WO2006126569A1 露光方法及びリソグラフィシステム审中-公开
标题翻译：曝光方法和光刻系统
公开(公告)号：WO2006126569A1
公开(公告)日：2006-11-30
申请号：PCT/JP2006/310314
申请日：2006-05-24
申请人：株式会社ニコン , 川久保昌治
发明人：川久保昌治
IPC分类号： H01L21/027
CPC分类号： G03F7/70458 , G03F7/70425
摘要： Highly accurate overlay exposure is performed at the time of hierarchically performing overlay exposure by using a plurality of projection exposure apparatuses. Reference layers for obtaining information relating to overlay exposure are separately specified in an X axis direction and a Y axis direction, respectively, and X axis direction component of the information is extracted from the reference layer in the X axis direction and a Y axis direction component of the information is extracted from the reference layer in the Y axis direction. Based on the extracted information, exposure statuses of the projection exposure apparatus to be used for overlay exposure of a subsequent layer are adjusted by axis, and overlay exposure is performed. As the information relating to the overlay exposure, a projection image distortion component and a nonlinear component of a positional shift quantity of a plurality of demarcated regions formed on a photosensitive substance are used.
摘要翻译：通过使用多个投影曝光装置在分层执行重叠曝光时执行高精度重叠曝光。在X轴方向和Y轴方向分别指定用于获得与重叠曝光有关的信息的参考层，并且从参考层在X轴方向和Y轴方向分量中提取信息的X轴方向分量在Y轴方向上从参考层提取信息。基于所提取的信息，通过轴来调整用于后续层的重叠曝光的投影曝光装置的曝光状态，并进行叠加曝光。作为与覆盖曝光有关的信息，使用形成在感光性物质上的多个分界区域的投影图像失真分量和位置偏移量的非线性分量。

50. 发明申请

WO1997034319A1 MANUFACTURE OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件的制造
公开(公告)号：WO1997034319A1
公开(公告)日：1997-09-18
申请号：PCT/JP1996000542
申请日：1996-03-06
申请人： HITACHI, LTD. , SATOH, Hidetoshi , NAKAYAMA, Yoshinori , OKUMURA, Masahide , OOTA, Hiroya , SAITOU, Norio
发明人： HITACHI, LTD.
IPC分类号： H01L21/30
CPC分类号： G03F7/70616 , G03F7/70433 , G03F7/70458 , G03F7/70633 , H01J37/3045 , H01J2237/3175 , Y10S430/143
摘要： A semiconductor device manufacturing process in which a reduction projection aligner and an electron beam aligner are both used. The pattern registration accuracy is improved by measuring the misregistration of the pattern of each aligner and correcting the misregistration before drawing the pattern by the electron beam aligner. First, misregistration measuring patterns are exposed by means of a stepper and the electron beam aligner. Then the misregistrations are measured by the same coordinate measuring instrument. The measurement data are averaged arithmetically using data on the surroundings and smoothed. The signs of the data on the misregistration are inverted and stored as correcting data. Date are transferred to the electron beam aligner with reference to the pattern used for exposure by the stepper. The correcting data of the two apparatuses are transferred to the electron beam aligner, and two sets of correcting data are added to the detected mark position. The pattern misregistration in the wafer plane in the position after the addition is determined. Exposure in the position designated by the subtraction of the correcting data from the determined misregistration is effected.
摘要翻译：使用还原投影对准器和电子束对准器的半导体器件制造工艺。通过测量每个对准器的图案的对准，并通过电子束对准器在绘制图案之前校正不对准，从而改善了图案配准精度。首先，通过步进器和电子束对准器曝光不对准测量图案。然后通过相同的坐标测量仪器测量误排列。测量数据使用围绕周围环境的数据进行平均平均化。反映配准数据的标志，并作为校正数据存储。参考用于步进曝光的图案将日期传送到电子束对准器。将两个装置的校正数据传送到电子束对准器，并将两组校正数据添加到检测到的标记位置。确定添加后的晶片平面上的图案重合。实现从确定的重合失调中减去校正数据指定的位置的曝光。

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