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    • 42. 发明申请
    • 露光方法及びリソグラフィシステム
    • 曝光方法和光刻系统
    • WO2006126569A1
    • 2006-11-30
    • PCT/JP2006/310314
    • 2006-05-24
    • 株式会社ニコン川久保 昌治
    • 川久保 昌治
    • H01L21/027
    • G03F7/70458G03F7/70425
    • Highly accurate overlay exposure is performed at the time of hierarchically performing overlay exposure by using a plurality of projection exposure apparatuses. Reference layers for obtaining information relating to overlay exposure are separately specified in an X axis direction and a Y axis direction, respectively, and X axis direction component of the information is extracted from the reference layer in the X axis direction and a Y axis direction component of the information is extracted from the reference layer in the Y axis direction. Based on the extracted information, exposure statuses of the projection exposure apparatus to be used for overlay exposure of a subsequent layer are adjusted by axis, and overlay exposure is performed. As the information relating to the overlay exposure, a projection image distortion component and a nonlinear component of a positional shift quantity of a plurality of demarcated regions formed on a photosensitive substance are used.
    • 通过使用多个投影曝光装置在分层执行重叠曝光时执行高精度重叠曝光。 在X轴方向和Y轴方向分别指定用于获得与重叠曝光有关的信息的参考层,并且从参考层在X轴方向和Y轴方向分量中提取信息的X轴方向分量 在Y轴方向上从参考层提取信息。 基于所提取的信息,通过轴来调整用于后续层的重叠曝光的投影曝光装置的曝光状态,并进行叠加曝光。 作为与覆盖曝光有关的信息,使用形成在感光性物质上的多个分界区域的投影图像失真分量和位置偏移量的非线性分量。
    • 43. 发明申请
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • 半导体器件的制造
    • WO1997034319A1
    • 1997-09-18
    • PCT/JP1996000542
    • 1996-03-06
    • HITACHI, LTD.SATOH, HidetoshiNAKAYAMA, YoshinoriOKUMURA, MasahideOOTA, HiroyaSAITOU, Norio
    • HITACHI, LTD.
    • H01L21/30
    • G03F7/70616G03F7/70433G03F7/70458G03F7/70633H01J37/3045H01J2237/3175Y10S430/143
    • A semiconductor device manufacturing process in which a reduction projection aligner and an electron beam aligner are both used. The pattern registration accuracy is improved by measuring the misregistration of the pattern of each aligner and correcting the misregistration before drawing the pattern by the electron beam aligner. First, misregistration measuring patterns are exposed by means of a stepper and the electron beam aligner. Then the misregistrations are measured by the same coordinate measuring instrument. The measurement data are averaged arithmetically using data on the surroundings and smoothed. The signs of the data on the misregistration are inverted and stored as correcting data. Date are transferred to the electron beam aligner with reference to the pattern used for exposure by the stepper. The correcting data of the two apparatuses are transferred to the electron beam aligner, and two sets of correcting data are added to the detected mark position. The pattern misregistration in the wafer plane in the position after the addition is determined. Exposure in the position designated by the subtraction of the correcting data from the determined misregistration is effected.
    • 使用还原投影对准器和电子束对准器的半导体器件制造工艺。 通过测量每个对准器的图案的对准,并通过电子束对准器在绘制图案之前校正不对准,从而改善了图案配准精度。 首先,通过步进器和电子束对准器曝光不对准测量图案。 然后通过相同的坐标测量仪器测量误排列。 测量数据使用围绕周围环境的数据进行平均平均化。 反映配准数据的标志,并作为校正数据存储。 参考用于步进曝光的图案将日期传送到电子束对准器。 将两个装置的校正数据传送到电子束对准器,并将两组校正数据添加到检测到的标记位置。 确定添加后的晶片平面上的图案重合。 实现从确定的重合失调中减去校正数据指定的位置的曝​​光。
    • 48. 发明申请
    • METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE
    • 用于通过匹配程序确定应用于IC制造过程的剂量校正的方法
    • WO2017060273A1
    • 2017-04-13
    • PCT/EP2016/073744
    • 2016-10-05
    • ASELTA NANOGRAPHICS
    • SAIB, MohamedSCHIAVONE, PatrickFIGUEIRO, ThiagoBAYLE, Sébastien
    • G03F7/20
    • G03F7/705G03F7/70458G03F7/70516
    • The invention discloses a method to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.
    • 本发明公开了一种从第一过程的参数容易地确定第二制造工艺的参数的方法。 代表两个过程之间的差异的度量是根据参数的数值计算的,这些参数值可以在校准布局上测量两个过程,或者可以根据布局的预先存在的值或者为 通过插值/外推程序进行两个处理。 选择度量的数量,使得它们的组合给出了在设计的所有区域中的两个过程之间的差异的精确表示。 有利地,度量被计算为目标设计的卷积与核函数和变形函数的化合物的乘积。 确定参考过程的参考物理模型。 计算应用于由参考过程产生的设计边缘的尺寸校正。 然后将其全部或部分转化为剂量校正。