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    • 43. 发明授权
    • Method for assaying elements in a substrate for optics, electronics, or optoelectronics
    • 用于光学,电子学或光电子学的衬底中的元件的测定方法
    • US07163897B2
    • 2007-01-16
    • US10637073
    • 2003-08-06
    • Laurent Viravaux
    • Laurent Viravaux
    • H01L21/461
    • G01N1/32C01B7/193C01B33/10705G01N1/40G01N1/4044G01N2001/4027G01N2033/0095
    • The invention provides a method of assaying at least one element in a material including silicon. The method includes the steps of decomposing a portion of the material with an etching agent to form a solution containing hexafluorosilicic acid and at least one element to be assayed, heating the solution to a temperature sufficient to transform a substantial portion of the hexafluorosilicic acid into silicon tetrafluoride and to cause at least some of the silicon tetrafluoride to evaporate, such that a solution for assaying is obtained in which the silicon content is reduced while and the elements to be assayed are conserved; and assaying at least one element contained in the solution. The invention is applicable to the field of manufacturing substrates or components for optics, electronics, or optoelectronics, and in particular to the field of quality control.
    • 本发明提供一种测定包括硅的材料中的至少一种元素的方法。 该方法包括以下步骤:用蚀刻剂分解材料的一部分以形成含有六氟硅酸的溶液和至少一种要测定的元素,将该溶液加热至足以将大部分六氟硅酸转化为硅的温度 并使至少一些四氟化硅蒸发,从而得到其中硅含量降低同时待分析元素保守的用于测定的溶液; 并测定溶液中包含的至少一种元素。 本发明可应用于制造用于光学,电子学或光电子学的衬底或组件的领域,特别是涉及质量控制领域。
    • 45. 发明授权
    • Process for preparing finely-divided silicon dioxide in good yield
    • 以高产率制备细碎二氧化硅的方法
    • US4572827A
    • 1986-02-25
    • US594150
    • 1984-10-18
    • Gosta Flemmert
    • Gosta Flemmert
    • C01B33/16B01J12/00C01B7/19C01B33/18
    • C01B33/184B01J12/005C01B33/183C01B7/193C01P2006/12C01P2006/22C01P2006/80
    • Process and apparatus are provided for preparing finely-divided silicon dioxide in good yield by reaction of silicon fluoride in the vapor phase with water vapor, combustible gas and free oxygen-containing gas in a flame reaction zone to form hydrogen fluoride and silicon dioxide entrained in a gaseous reaction mixture; withdrawing the gaseous reaction mixture from the flame reaction zone; and then immediately and rapidly cooling the gaseous reaction mixture and entrained silicon dioxide to a temperature below 700.degree. C. by passing the gaseous reaction mixture in a turbulent flow at a Reynolds number above 300 under constraint through a straight narrow passage in alignment with the gas flow, the passage having a diameter within the range from about 20 to about 150 mm and smooth walls constituting a cooling surface.
    • 提供了工艺和装置,用于通过在气相中的氟化硅与水蒸气,可燃气体和游离含氧气体在火焰反应区中反应来以良好的收率制备细分二氧化硅,以形成氟化氢和二氧化碳 气态反应混合物; 从火焰反应区取出气态反应混合物; 然后立即并快速地将气态反应混合物和夹带的二氧化硅冷却至低于700℃的温度,通过使气态反应混合物在雷诺数高于300的湍流中在约束条件下通过与气体对准的直的窄通道 流动,通道具有在约20至约150mm的范围内的直径和构成冷却表面的平滑壁。
    • 46. 发明授权
    • Method of preparing fumed SiO.sub.2
    • 制备热解法SiO(HD 2)的方法
    • US4059680A
    • 1977-11-22
    • US724683
    • 1976-09-20
    • Joel F. M. LeathersDonald W. Calvin
    • Joel F. M. LeathersDonald W. Calvin
    • C01B7/19C01B33/10C01B33/18C01B33/12C01B7/22
    • C01B33/183C01B33/103C01B33/184C01B7/193C01P2004/62
    • Fluorosilicic acid solutions, which normally undergo decomposition when distilled, thereby creating unwanted forms of SiO.sub.2, are rendered stable during distillation by providing in the fluorosilicic acid solution an amount of HF which is at least about 10 parts of HF per 36 parts of H.sub.2 SiF.sub.6 and an amount of H.sub.2 O which is at least about 54 parts of H.sub.2 O per 36 parts of H.sub.2 SiF.sub.6. The mixture is distilled to remove any excess H.sub.2 O and excess HF that is present, without encountering formation of SiO.sub.2, until an azeotropic solution containing about 36% H.sub.2 SiF.sub.6, about 10% HF and about 54% H.sub.2 O is reached. The ternary azeotrope, being of constant quality and concentration, is more suitable for use in various processes, such as processes for making fumed SiO.sub.2, than H.sub.2 SiF.sub.6 solutions which are not of constant quality or concentration.
    • 通常在蒸馏过程中经历分解,从而产生不想要的形式的SiO 2的氟硅酸溶液在蒸馏期间通过在氟硅酸溶液中提供一定量的HF,每36个H 2 SiF 6和至少约10份HF, 每36份H 2 SiF 6至少约54份H 2 O的量。 将混合物蒸馏以除去存在的任何过量的H 2 O和过量的HF,而不会形成SiO 2,直到达到含有约36%H 2 SiF 6,约10%HF和约54%H 2 O的共沸溶液。 具有恒定质量和浓度的三元共沸物比不具有恒定质量或浓度的H 2 SiF 6溶液更适合用于各种工艺中,例如制造热解法SiO 2的方法。