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41. 发明公开

EP1391252A1 Method and apparatus for improving silicon processing efficiency 有权
标题翻译： Verfahren zur Verbesserung der Effizienz der Behandlung von Silicium
公开(公告)号：EP1391252A1
公开(公告)日：2004-02-25
申请号：EP03255135.0
申请日：2003-08-19
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Graham, Todd Stanley , Messner, Kathryn Elizabeth , Schmidt, Chris Tim , Horstman, Terence Lee
IPC分类号： B07B13/02 , B07B13/04 , C30B15/02 , C30B29/06
CPC分类号： G01N15/0272 , B07B13/02 , B07B13/04 , C30B15/02 , G01N2015/0288
摘要： A method for processing polycrystalline silicon workpieces to form size distributions of polycrystalline silicon pieces suitable for use in a Czochralski-type process includes: (1) preparing a polycrystalline silicon workpiece by a chemical vapor deposition process; (2) fracturing the polycrystalline silicon workpiece into a mixture of polycrystalline silicon pieces, where the polycrystalline silicon pieces have varying sizes; and (3) sorting the mixture of polycrystalline silicon pieces into at least two size distributions. Step (2) may be carried out by a thermal shock process. Step (3) may be carried out using a rotary indent classifier. A rotary indent classifier for performing the method includes: (i) a rotating cylinder having a circumferential edge with indents arrayed in increasing size from a first end of the cylinder to a second end of the cylinder, and (ii) a conveyor running longitudinally adjacent the cylinder, for conveying silicon pieces from the first end of the cylinder to the second end of the cylinder.
摘要翻译：一种用于处理多晶硅工件以形成适用于切克劳斯基型工艺的多晶硅片的尺寸分布的方法包括：（1）通过化学气相沉积工艺制备多晶硅工件; （2）将多晶硅工件压裂成多晶硅片的混合物，其中多晶硅片具有不同的尺寸; 和（3）将多晶硅片的混合物分选成至少两个尺寸分布。步骤（2）可以通过热冲击过程进行。步骤（3）可以使用旋转凹口分类器进行。一种用于执行该方法的旋转凹口分选机包括：（i）旋转圆筒，其具有沿圆柱体的第一端至第二端的尺寸排列的凹口的圆周边缘，以及（ii）纵向相邻的输送机气缸，用于将硅片从气缸的第一端输送到气缸的第二端。

42. 发明公开

EP0533438A3 Cleaning of cvd reactor used in the production of polycrystalline silicon 失效
标题翻译：用于生产多晶硅的CVD反应器的清洗
公开(公告)号：EP0533438A3
公开(公告)日：1993-12-08
申请号：EP92308391.9
申请日：1992-09-15
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Goffnett, David Michael , Richardson, Mark Douglas , Bielby, Eugene Francis
IPC分类号： C23C16/44 , C23C16/24 , B08B9/08 , B24C1/00
CPC分类号： B24C3/325 , B24C1/003 , C01B33/035
摘要： The present invention is a process for the cleaning of the inner surfaces of a chemical vapor deposition reactor used in the production of polycrystalline silicon. The process comprises impacting the surfaces to be cleaned with solid carbon dioxide pellets. The carbon dioxide pellets dislodge silicon deposits from the surface of the reactor without damaging the surface of the reactor and without providing a source for contamination of polycrystalline silicon produced in the cleaned reactor. The present process is particularly useful for the cleaning of the inner surfaces of chemical vapor deposition reactors used in the production of semi-conductor grade silicon.

43. 发明公开

EP2799396A1 Quantitative measurement of gase phase process intermediates using raman spectroscopy 审中-公开
标题翻译：量子信号气相色谱法测定拉曼光谱
公开(公告)号：EP2799396A1
公开(公告)日：2014-11-05
申请号：EP14170474.2
申请日：2010-05-11
申请人： Dow Corning Corporation , Hemlock Semiconductor Corporation
发明人： Harms, Greg , Kreszowski, Douglas , Licht, David , Lipp, Elmer , Molnar, Mike , Pinet, Marc
IPC分类号： C01B33/027 , G01N21/27 , G01N21/65
CPC分类号： G01N21/65 , C01B33/027 , G01N21/274 , Y10T436/12
摘要： A method for quantitatively monitoring gas phase materials in a chemical process is provided and includes, providing a gaseous feed stream containing one or more reactant gases of interest; exposing the gaseous feed stream to coherent radiation from a Raman spectroscopic device; acquiring a Raman spectroscopic signal from each of the gaseous components in the feed stream; analysing the spectroscopic signal to determine the presence and concentration of each of the gaseous components; and displaying the results of the analysis. In one embodiment, the method is useful for quantitatively monitoring gas phase materials in a process for making high purity silicon.
摘要翻译：提供了一种在化学过程中定量监测气相材料的方法，包括提供含有一种或多种感兴趣的反应物气体的气态进料流; 将气态进料流暴露于来自拉曼光谱装置的相干辐射; 从进料流中的每个气体组分获取拉曼光谱信号; 分析光谱信号以确定每种气态组分的存在和浓度; 并显示分析结果。在一个实施方案中，该方法可用于在制备高纯度硅的方法中定量监测气相材料。

44. 发明公开

EP2567939A3 Method of determining an amount of impurities that a contaminating material contributes to high purity silicon and furnace for treating high purity silicon 审中-公开
标题翻译：为高纯度硅的治疗测定的杂质，这是与一个污染材料对高纯硅一起加入的方法，和炉
公开(公告)号：EP2567939A3
公开(公告)日：2014-07-09
申请号：EP12195527.2
申请日：2009-09-24
申请人： Hemlock Semiconductor Corporation
发明人： Depesa, Dennis , Host, Jon , Houthoofd, Troy , Rytlewski, Alan
IPC分类号： C01B33/037 , C01B33/021 , C30B29/06 , C30B35/00 , F27D1/00 , F27B11/00 , F27B17/00 , F27D3/12 , C30B33/02 , F27D19/00
CPC分类号： F27B17/0033 , C01B33/021 , C01B33/037 , C30B29/06 , C30B33/02 , C30B35/00 , F27D19/00 , F27D2019/0006
摘要： A method of determining an amount of impurities that a contaminating material contributes to high purity silicon comprises the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating. A furnace for heat treating high purity silicon comprises a housing that defines a heating chamber. The housing is at least partially formed from low contaminant material that contributes less than 400 parts per trillion of impurities to the high purity silicon during heating at annealing temperatures for a sufficient period time to anneal the high purity silicon, and the furnace contributes an average of less than 400 parts per trillion of impurities to the high purity silicon under the same heating conditions.

45. 发明公开

EP2567939A2 Method of determining an amount of impurities that a contaminating material contributes to high purity silicon and furnace for treating high purity silicon 审中-公开
标题翻译：为高纯度硅的治疗测定的杂质，这是与一个污染材料对高纯硅一起加入的方法，和炉
公开(公告)号：EP2567939A2
公开(公告)日：2013-03-13
申请号：EP12195527.2
申请日：2009-09-24
申请人： Hemlock Semiconductor Corporation
发明人： Depesa, Dennis , Host, Jon , Houthoofd, Troy , Rytlewski, Alan
IPC分类号： C01B33/021 , C01B33/037 , C30B29/06 , F25D15/00
CPC分类号： F27B17/0033 , C01B33/021 , C01B33/037 , C30B29/06 , C30B33/02 , C30B35/00 , F27D19/00 , F27D2019/0006
摘要： A method of determining an amount of impurities that a contaminating material contributes to high purity silicon comprises the step of partially encasing a sample of high purity silicon in the contaminating material. The sample encased in the contaminating material is heated within a furnace. A change in impurity content of the high purity silicon is determined after the step of heating, compared to an impurity content of the high purity silicon prior to the step of heating. A furnace for heat treating high purity silicon comprises a housing that defines a heating chamber. The housing is at least partially formed from low contaminant material that contributes less than 400 parts per trillion of impurities to the high purity silicon during heating at annealing temperatures for a sufficient period time to anneal the high purity silicon, and the furnace contributes an average of less than 400 parts per trillion of impurities to the high purity silicon under the same heating conditions.
摘要翻译：确定性采矿对杂质的量的方法，做了污染材料有助于高纯度硅包括在污染材料部分包围高纯度硅的样品的步骤。在污染材料包住所述样品在炉内加热。在高纯硅的杂质含量的变化被确定开采加热的步骤之后，相对于加热前的工序中的高纯度硅的杂质含量的。一种用于热处理高纯硅的炉子包括一个壳体做定义的加热室。该壳体至少部分地由低污染物材料形成做在退火温度足够长的时间时进行退火高纯硅加热期间投稿小于400份每杂质的高纯度硅的三次方，和炉协助以平均的小于400份相同的加热条件下每杂质的高纯度硅的三次方。

46. 发明公开

EP2514716A3 Quantitative measurement of gas phase process intermediates using Raman spectroscopy 审中-公开
标题翻译：通过拉曼光谱法的装置的气相法工艺的中间产物定量测量
公开(公告)号：EP2514716A3
公开(公告)日：2013-02-13
申请号：EP12176590.3
申请日：2010-05-11
申请人： Dow Corning Corporation , Hemlock Semiconductor Corporation
发明人： Harms, Greg , Kreszowski, Douglas , Licht, David , Lipp, Elmer , Molnar, Mike , Pinet, Marc
IPC分类号： C01B33/027 , G01N21/27 , G01N21/65
CPC分类号： G01N21/65 , C01B33/027 , G01N21/274 , Y10T436/12
摘要： A method for quantitatively monitoring gas phase materials in a chemical process is provided and includes, providing a gaseous feed stream containing one or more reactant gases of interest; exposing the gaseous feed stream to coherent radiation from a Raman spectroscopic device; acquiring a Raman spectroscopic signal from each of the gaseous components in the feed stream; analyzing the spectroscopic signal to determine the presence and concentration of each of the gaseous components; and displaying the results of the analysis. In one embodiment, the method is useful for quantitatively monitoring gas phase materials in a process for making high purity silicon.

47. 发明授权

EP1553214B1 Flowable chips and methods for using them 有权
标题翻译：流动性的芯片和使用iher方法
公开(公告)号：EP1553214B1
公开(公告)日：2011-11-23
申请号：EP05075441.5
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale, Jr.
IPC分类号： B07B13/04 , C30B15/02
CPC分类号： C30B15/02 , C30B29/06

48. 发明公开

EP2367832A1 PROCESS FOR PRODUCING TRICHLOROSILANE AND TETRACHLOROSILANE 审中-公开
标题翻译：用于生产三氯氢硅和四氯
公开(公告)号：EP2367832A1
公开(公告)日：2011-09-28
申请号：EP09752997.8
申请日：2009-11-17
申请人： Dow Corning Corporation , Hemlock Semiconductor Corporation
发明人： HARDER, Patrick, James , TSELEPIS, Arthur, James
IPC分类号： C07F7/12
CPC分类号： C01B33/1071
摘要： A process for reducing waste and increasing yield of chlorosilane monomers is performed by cracking polychlorosiloxane and polychlorosilane by-products generated during production of trichlorosilane useful for the manufacture of polycrystalline silicon.

49. 发明公开

EP2365939A1 METHOD OF ANALYZING A COMPOSITION CONTAINING IMPURITIES 审中-公开
标题翻译：程序污染物包括成分分析
公开(公告)号：EP2365939A1
公开(公告)日：2011-09-21
申请号：EP09756890.1
申请日：2009-11-16
申请人： Hemlock Semiconductor Corporation
发明人： HADD, John , HOLMES, Ron , PUEHL, Carl
IPC分类号： C01B33/107 , G01N1/22 , G01N33/00
CPC分类号： G01N30/88 , C01B33/10778 , G01N1/42 , G01N30/7206 , G01N2030/8872
摘要： A method of analyzing a composition and a method of processing the composition are provided. The composition contains impurities and has a boiling point less than ambient temperature and/or a vapor pressure greater than water at 14.5 °C. The method of analyzing the composition comprises a step of providing the composition in a liquid state within a vessel. The composition is chilled in the liquid state within the vessel at a temperature below the boiling point of the composition, thereby maintaining the composition in the liquid state. The chilled composition in the vessel is converted to produce at least one of a vaporized composition and a nebulized composition, which converted composition is introduced into an analytical device. A measurement of content of the impurities of the composition is obtained from the analytical device. The method of processing the composition includes the same steps as the method of analyzing the composition, and but further requires that at least a portion of the composition remains in the supply tank.

50. 发明公开

EP1553214A2 Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods 有权
标题翻译： FliessfähigeSpäneund Verfahren zu iher Verwendung
公开(公告)号：EP1553214A2
公开(公告)日：2005-07-13
申请号：EP05075441.5
申请日：2003-02-06
申请人： HEMLOCK SEMICONDUCTOR CORPORATION
发明人： Arvidson, Arvid Neil , Horstman, Terence Lee , Molnar, Michael John , Schmidt, Chris Tim , Spencer, Roger Dale, Jr.
IPC分类号： C30B15/02
CPC分类号： C30B15/02 , C30B29/06
摘要： A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.
摘要翻译：用多晶硅对坩埚再充电的方法包括将可流动的芯片添加到在切克劳斯基型工艺中使用的坩埚中。可流动的芯片是通过化学气相沉积工艺制备的由多晶硅制成的多晶硅颗粒，并且可流动的芯片具有受控的粒度分布，通常为非球形形态，低水平的主体杂质和低水平的表面杂质。可以使用常规的进料设备（例如振动给料机系统和罐式给料机）将可流动的切屑加入到坩埚中。

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