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41. 发明授权

US08591525B2 Hemorrhoid ligation apparatus, ligation kit containing the apparatus and method for ligating hemorrhoid 失效
标题翻译：痔疮结扎装置，包含痔疮结扎装置及方法的连接试剂盒
公开(公告)号：US08591525B2
公开(公告)日：2013-11-26
申请号：US12071057
申请日：2008-02-14
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： A61B17/12
CPC分类号： A61B17/12013 , A61B50/20 , A61B50/30 , A61B2017/12018 , Y10T29/53657
摘要： The hemorrhoid ligation apparatus (10) includes a main cylinder (12) to which an O-ring (50) for ligating the hemorrhoid is to be attached on an outer circumferential surface of a front end portion, a sub cylinder (14) air-tightly and slidably provided inside the main cylinder (12), so as to suck the hemorrhoid into the front end portion of the main cylinder (12) upon being drawn toward a rear end portion of the main cylinder (12), an operating fluid loaded inside the sub cylinder (14), and a plunger (16) air-tightly and slidably provided inside the sub cylinder (14), so as to pressurize the operating fluid upon being squeezed toward a front end portion of the sub cylinder (14), to thereby squeeze the O-ring (50) toward the front end portion of the main cylinder (12) with the pressurized operating fluid, thus detaching the O-ring (50) from the main cylinder (12).
摘要翻译：痔疮结扎装置（10）包括主缸（12），用于将痔疮结扎的O形环（50）安装在前端部的外周面上，副气缸（14）紧密且可滑动地设置在主气缸（12）内部，以便在朝向主气缸（12）的后端部分抽吸时将痔疮吸入主气缸（12）的前端部分，在副气缸14内部气密地可滑动地设置的柱塞16，以便在朝向副气缸14的前端侧挤压工作液时，由此，利用加压工作流体将O形环（50）朝向主缸（12）的前端部挤压，从而将O形环（50）从主缸（12）拆下。

42. 发明授权

US08111723B2 Method of driving a laser diode 失效
标题翻译：驱动激光二极管的方法
公开(公告)号：US08111723B2
公开(公告)日：2012-02-07
申请号：US12506713
申请日：2009-07-21
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/13
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供具有简单结构和配置的超短脉冲/超大功率激光二极管。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

43. 发明申请

US20120002695A1 METHOD OF DRIVING A LASER DIODE 有权
标题翻译：驱动激光二极管的方法
公开(公告)号：US20120002695A1
公开(公告)日：2012-01-05
申请号：US13212249
申请日：2011-08-18
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S5/02
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供具有简单结构和配置的超短脉冲/超大功率激光二极管。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

44. 发明申请

US20110216788A1 MODE-LOCKED SEMICONDUCTOR LASER DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：模式锁定半导体激光器件及其驱动方法
公开(公告)号：US20110216788A1
公开(公告)日：2011-09-08
申请号：US13035540
申请日：2011-02-25
申请人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人： Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号： H01S3/098
摘要： Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译：提供了一种锁模半导体激光器件的驱动方法，其包括层叠结构，其中第一化合物半导体层，具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压，第二电极和第一电极。层叠结构形成在具有极性的化合物半导体基板上，第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。阱层的深度为1nm以上且10nm以下。势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。通过将电流从第二电极通过层压结构传递到第一电极，在发射区域中产生光脉冲。

45. 发明授权

US07786488B2 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US07786488B2
公开(公告)日：2010-08-31
申请号：US12394477
申请日：2009-02-27
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： H01L31/0312
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。

46. 发明申请

US20100027573A1 METHOD OF DRIVING A LASER DIODE 失效
标题翻译：驱动激光二极管的方法
公开(公告)号：US20100027573A1
公开(公告)日：2010-02-04
申请号：US12506713
申请日：2009-07-21
申请人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人： Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号： H01S3/00
CPC分类号： H01S5/06216 , H01S5/0428
摘要： An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译：提供具有简单结构和配置的超短脉冲/超大功率激光二极管。在驱动激光二极管的方法中，激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。脉冲电流的宽度优选为10纳秒以下，脉冲电流的值为0.4安培以上。

47. 发明授权

US07439546B2 Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method 有权
公开(公告)号：US07439546B2
公开(公告)日：2008-10-21
申请号：US11425595
申请日：2006-06-21
申请人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
发明人： Osamu Goto , Takeharu Asano , Yasuhiko Suzuki , Motonobu Takeya , Katsuyoshi Shibuya , Takashi Mizuno , Tsuyoshi Tojo , Shiro Uchida , Masao Ikeda
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L33/0075 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0425 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

48. 发明授权

US07372080B2 Gan semiconductor device 有权
标题翻译：甘半导体器件
公开(公告)号：US07372080B2
公开(公告)日：2008-05-13
申请号：US10517877
申请日：2003-06-19
申请人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
发明人： Osamu Goto , Osamu Matsumoto , Tomomi Sasaki , Masao Ikeda
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01S5/0207 , H01S5/0014 , H01S5/0422 , H01S5/2201 , H01S5/32341
摘要： Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak.A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device (50) is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate (52) is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate (52) without providing a GaN-ELO structure layer. The GaN single-crystal substrate (52) has continuous belt-shaped core portions (52a) each having a width of 10 μm. These core portions (52a) are spaced apart from each other by a distance of about 400 μm. A laser stripe (30), a pad metal (37) for the p-side electrode (36), and the n-side electrode (38) are provided on the multilayer structure in a region except the core portions (52a) of the GaN single-crystal substrate (52). The horizontal distance Sp between the pad metal (37) and the core portion (52a) adjacent thereto is 95 μm, and the horizontal distance Sn between the n-side electrode (38) and the core portion (52a) adjacent thereto is also 95 μm.
摘要翻译：提供了一种形成在GaN单晶衬底上并具有能够减少电流泄漏的构造的GaN基半导体发光器件。作为GaN系半导体发光元件的一例，公开了GaN系半导体激光元件（50），是具有p侧电极和n侧电极的结构的半导体激光元件在GaN基化合物半导体层的多层结构上。 GaN基半导体激光器件（50）的结构与形成在蓝宝石衬底上的常规GaN基半导体激光器器件相似，除了使用GaN单晶衬底（52）代替蓝宝石衬底，并且多层结构直接形成在GaN单晶衬底（52）上，而不提供GaN-ELO结构层。 GaN单晶衬底（52）具有宽度为10μm的连续的带状芯部（52a）。这些芯部分（52a）彼此隔开约400μm的距离。激光条纹（30），用于p侧电极（36）的焊盘金属（37）和n侧电极（38）设置在除了芯部（52a）的芯部 GaN单晶衬底（52）。焊垫金属（37）与与其相邻的芯部（52a）之间的水平距离Sp为95μm，n侧电极（38）与与其相邻的芯部（52a）之间的水平距离Sn为也是95妈妈。

49. 发明申请

US20060076566A1 Light emitting device and optical device using the same 失效
公开(公告)号：US20060076566A1
公开(公告)日：2006-04-13
申请号：US11242768
申请日：2005-10-04
申请人： Masao Ikeda
发明人： Masao Ikeda
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01L25/0753 , H01L25/0756 , H01L2924/0002 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/2214 , H01S5/2231 , H01S5/32341 , H01S5/34326 , H01S5/34333 , H01S5/347 , H01S5/4043 , H01S5/4087 , H04N9/315 , H01L2924/00
摘要： A light emitting device which can be easily manufactured and can control the positions of light emission precisely, and an optical device. A first and second light emitting elements are formed on one face of a supporting base. The first light emitting element has an active layer made of GaInN mixed crystal on a GaN-made first substrate on the side thereof on which the supporting base is disposed. The second light emitting element has lasing portions on a GaAs-made second substrate on the side thereof on which the supporting base is disposed. Since the first and second light emitting elements are not grown on the same substrate, a multiple-wavelength laser having the output wavelength of around 400 nm can be easily obtained. Since the first substrate is transparent in the visible region, the positions of light emitting regions in the first and second light emitting elements can be precisely controlled by lithography.

50. 发明申请

US20050145879A1 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US20050145879A1
公开(公告)日：2005-07-07
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： B24B37/00 , C30B29/38 , H01L21/20 , H01L21/304 , H01L21/306 , H01L33/00 , H01L21/00
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。制造和抛光直径大于45mm的圆形氮化物晶片。通过抬起上转盘来补偿变形，粗抛光在压力低于60g / cm 2的无压状态下抛光氮化物晶片。中心处的失真高度H降低到H <= 12 mum。分钟抛光是一种新设计的CMP，它们用含氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

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