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    • 42. 发明授权
    • Thin film transistor and display panel having the same
    • 薄膜晶体管和显示面板具有相同的功能
    • US07855405B2
    • 2010-12-21
    • US12157007
    • 2008-06-05
    • Sung-Hoon Kim
    • Sung-Hoon Kim
    • H01L29/76
    • H01L29/41733H01L27/124H01L29/42384H01L29/78633
    • A thin film transistor includes a gate part which includes a gate electrode and a light blocking electrode extending from the gate electrode. The light blocking electrode prevents a light provided from beneath the gate electrode from being guided to a semiconductor layer. The light blocking electrode is overlapped by two source electrodes and a drain electrode arranged between the two source electrodes, all of which have an I-shape. The width of the light blocking electrode is selected so that a parasitic capacitance between a source part and the gate part may be controlled. Thus, a photocurrent of the thin film transistor may be reduced, and a kickback voltage difference between pixels in the display panel may also be reduced.
    • 薄膜晶体管包括栅极部分,其包括栅电极和从栅电极延伸的遮光电极。 遮光电极防止从栅极下方提供的光被引导到半导体层。 遮光电极由布置在两个源电极之间的两个源电极和漏电极重叠,所有这些都具有I形。 选择遮光电极的宽度,使得可以控制源极部分和栅极部分之间的寄生电容。 因此,可以减小薄膜晶体管的光电流,并且还可以减小显示面板中的像素之间的反冲电压差。
    • 44. 发明授权
    • Semiconductor memory device and method of inputting/outputting data
    • 半导体存储器件及其输入/输出方法
    • US07643355B2
    • 2010-01-05
    • US11896722
    • 2007-09-05
    • Joung-Yeal KimJeong-Don LimSung-Hoon KimWoo-Jin Lee
    • Joung-Yeal KimJeong-Don LimSung-Hoon KimWoo-Jin Lee
    • G11C7/00
    • G11C7/1006G11C7/1051G11C7/106G11C7/1069G11C7/1078G11C7/1087G11C7/1096G11C2207/107
    • According to an example embodiment, a semiconductor memory device may include a memory core, input circuit, and/or an output circuit. The input circuit may be configured to generate second data from first data using latch circuits operating in response to input control signals enabled during different periods. The input circuit may be further configured to provide the second data to the memory core. The second data may have 2N times the number of bits of the first data, where N is a positive integer. The output circuit may be configured to generate fourth data from third data using latch circuits operating in response to output control signals enabled during different periods. The output circuit may be further configured to provide the fourth data to data output pins. The fourth data may have ½N times the number of bits of the third data. A method of inputting/outputting data is also provided.
    • 根据示例实施例,半导体存储器件可以包括存储器芯,输入电路和/或输出电路。 输入电路可以被配置为使用响应于在不同周期期间启用的输入控制信号而工作的锁存电路从第一数据产生第二数据。 输入电路还可以被配置为向存储器核提供第二数据。 第二数据可以具有2N次第一数据的比特数,其中N是正整数。 输出电路可以被配置为使用响应于在不同周期期间启用的输出控制信号而工作的锁存电路从第三数据生成第四数据。 输出电路还可以被配置为向数据输出引脚提供第四数据。 第四数据可以具有第三数据的比特数的1/2N倍。 还提供了一种输入/输出数据的方法。
    • 48. 发明申请
    • Thin film transistor and display panel having the same
    • 薄膜晶体管和显示面板具有相同的功能
    • US20080308803A1
    • 2008-12-18
    • US12157007
    • 2008-06-05
    • Sung-Hoon Kim
    • Sung-Hoon Kim
    • H01L29/04
    • H01L29/41733H01L27/124H01L29/42384H01L29/78633
    • A thin film transistor includes a gate part which includes a gate electrode and a light blocking electrode extending from the gate electrode. The light blocking electrode prevents a light provided from beneath the gate electrode from being guided to a semiconductor layer. The light blocking electrode is overlapped by two source electrodes and a drain electrode arranged between the two source electrodes, all of which have an I-shape. The width of the light blocking electrode is selected so that a parasitic capacitance between a source part and the gate part may be controlled. Thus, a photocurrent of the thin film transistor may be reduced, and a kickback voltage difference between pixels in the display panel may also be reduced.
    • 薄膜晶体管包括栅极部分,其包括栅电极和从栅电极延伸的遮光电极。 遮光电极防止从栅极下方提供的光被引导到半导体层。 遮光电极由布置在两个源电极之间的两个源电极和漏电极重叠,所有这些都具有I形。 选择遮光电极的宽度,使得可以控制源极部分和栅极部分之间的寄生电容。 因此,可以减小薄膜晶体管的光电流,并且还可以减小显示面板中的像素之间的反冲电压差。