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41. 发明授权

US09293575B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09293575B2
公开(公告)日：2016-03-22
申请号：US13364416
申请日：2012-02-02
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/16 , H01L29/45 , H01L29/78 , H01L29/66 , H01L29/06 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/45 , H01L29/66068 , H01L29/7803 , H01L29/7805 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity region, while the contact wire has a polysilicon layer in the portion in contact with the impurity region, and has a metal layer on the polysilicon layer.
摘要翻译：根据本发明的半导体器件包括：由SiC制成的半导体层; 通过用杂质掺杂半导体层而形成的杂质区域; 以及形成在与杂质区接触的半导体层上的接触线，而接触导线在与杂质区接触的部分中具有多晶硅层，并且在多晶硅层上具有金属层。

42. 发明授权

US09136322B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09136322B2
公开(公告)日：2015-09-15
申请号：US13983051
申请日：2012-02-01
申请人： Yuki Nakano , Ryota Nakamura
发明人： Yuki Nakano , Ryota Nakamura
IPC分类号： H01L29/66 , H01L29/06 , H01L29/10 , H01L29/78 , H01L27/088 , H01L29/08 , H01L29/417 , H01L29/16
CPC分类号： H01L29/063 , H01L21/046 , H01L27/088 , H01L29/045 , H01L29/0607 , H01L29/0623 , H01L29/0696 , H01L29/0878 , H01L29/1037 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66666 , H01L29/7811 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device includes a semiconductor layer made of a wide bandgap semiconductor and including a gate trench; a gate insulating film formed on the gate trench; and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film. The semiconductor layer includes a first conductivity type source region; a second conductivity type body region; a first conductivity type drift region; a second conductivity type first breakdown voltage holding region; a source trench passing through the first conductivity type source region and the second conductivity type body region from the front surface and reaching a drain region; and a second conductivity type second breakdown voltage region selectively formed on an edge portion of the source trench where the sidewall and the bottom wall thereof intersect with each other in a parallel region of the source trench.
摘要翻译：半导体器件包括由宽带隙半导体制成并包括栅极沟槽的半导体层; 栅极绝缘膜形成在栅极沟槽上; 以及嵌入栅极沟槽中以通过栅极绝缘膜与半导体层相对的栅电极。半导体层包括第一导电型源区; 第二导电类型体区; 第一导电型漂移区; 第二导电类型的第一击穿电压保持区域; 源极沟槽，其从前表面穿过第一导电类型源极区域和第二导电类型体区域并到达漏极区域; 以及选择性地形成在源沟槽的边缘部分上的第二导电类型的第二击穿电压区域，其中侧壁和底壁在源沟槽的平行区域中彼此相交。

43. 发明授权

US08872163B2 Fused ring compounds useful in organic thin-film transistors 有权
公开(公告)号：US08872163B2
公开(公告)日：2014-10-28
申请号：US13060779
申请日：2009-08-20
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura , Hirofumi Kondo
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura , Hirofumi Kondo
IPC分类号： H01L51/52 , C07F7/08 , C07C255/52 , C07C22/08 , C07C25/22 , C07C211/61 , C07C321/28 , C07C43/20 , C07D495/04 , C07D471/04 , H01L51/10 , H01L51/00 , C07C15/56 , C07C15/28 , C07C13/62 , H01L51/05
摘要： A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein R1 and R2, and R3 and R4 are respectively combined with each other to form an aromatic hydrocarbon ring having 6 to 60 carbon atoms or an aromatic heterocyclic ring having 3 to 60 carbon atoms; the ring being fused to the ring to which the groups are bonded, whereby the structure of the formula (1) has 5 or more aromatic rings that are fused; and the fused rings formed by R1 and R2, and R3 and R4 each may have a substituent.

44. 发明授权

US08802713B2 3-alkoxy-1-phenylpyrazole derivatives and pesticides 有权
标题翻译： 3-烷氧基-1-苯基吡唑衍生物和农药
公开(公告)号：US08802713B2
公开(公告)日：2014-08-12
申请号：US12682059
申请日：2008-10-17
申请人： Satoru Ohata , Katsuya Kato , Keiji Toriyabe , Yoshihiro Ito , Ryuji Hamaguchi , Yuki Nakano
发明人： Satoru Ohata , Katsuya Kato , Keiji Toriyabe , Yoshihiro Ito , Ryuji Hamaguchi , Yuki Nakano
IPC分类号： A61K31/415 , C07D231/10 , C07D231/22 , A01N43/56 , C07D231/52
CPC分类号： A01N43/56 , C07D231/22 , C07D231/52
摘要： To provide pesticides such as insecticides, miticides and nematicides, which are excellent in the safety, pesticidal effects, residual effectiveness, etc., which further have infiltration, and which can be applied by soil treatment.A pesticide comprising a 3-alkoxy-1-phenyl-pyrazole derivative represented by the formula [I] or an agriculturally acceptable salt thereof as an active ingredient: wherein, for example, R1 is a C1-C10 alkyl group or the like, R2 is a hydrogen atom or the like, R3 is a hydrogen atom or the like, and each of R4, R5, R6 and R8 which are independent of one another, is a hydrogen atom or the like, and R7 is a C2-C4 haloalkylthio group or the like.
摘要翻译：提供进一步具有渗透性且可通过土壤处理施用的安全性，杀虫效果，残留效果等优异的杀虫剂，杀螨剂，杀线虫剂等杀虫剂。一种农药，其包含式[I]表示的3-烷氧基-1-苯基 - 吡唑衍生物或其农业上可接受的盐作为活性成分：其中，例如，R1为C1-C10烷基等，R2 是氢原子等，R 3为氢原子等，R 4，R 5，R 6和R 8各自独立地为氢原子等，R 7为C 2〜C 4卤代烷硫基组等。

45. 发明授权

US08785915B2 Compound for organic thin film transistor and organic thin film transistor using the same 有权
标题翻译：用于有机薄膜晶体管的化合物和使用其的有机薄膜晶体管
公开(公告)号：US08785915B2
公开(公告)日：2014-07-22
申请号：US13060780
申请日：2009-08-28
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura , Hirofumi Kondo
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura , Hirofumi Kondo
IPC分类号： H01L51/52 , H01L51/10 , C07C43/20 , C07D495/04 , C07C13/66 , C07C25/22 , C07F7/08 , C07C255/52 , C07D207/06 , C07C211/61 , C07C317/14 , C07C22/08 , C07C15/20 , C07C321/28 , H01L51/05 , H01L51/00
CPC分类号： H01L51/0074 , C07C15/20 , C07C22/08 , C07C25/22 , C07C43/20 , C07C211/61 , C07C255/52 , C07C317/14 , C07C321/28 , C07C2603/24 , C07C2603/54 , C07D207/06 , C07D495/04 , C07F7/0805 , C07F7/0807 , C07F7/0812 , C07F7/0814 , H01L51/0056 , H01L51/0072 , H01L51/0076 , H01L51/0541 , H01L51/0545
摘要： A compound for an organic thin film transistor represented by the following formula (1): wherein at least one pair of adjacent two groups of R1, R3, R5 and R7 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded; and at least one pair of adjacent two groups of R2, R4, R6 and R8 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded.
摘要翻译：一种由下式（1）表示的有机薄膜晶体管的化合物：其中R 1，R 3，R 5和R 7的至少一对相邻的两个基团彼此键合以形成具有6个至60个碳原子或取代或未取代的碳原子数为3〜60的芳族杂环，该环与基团键合的环稠合; 并且R 2，R 4，R 6和R 8中的至少一对相邻的两个基团彼此键合以形成具有6至60个碳原子的取代或未取代的芳族烃环或具有3至60个碳的取代或未取代的芳族杂环所述环与所述基团键合的环稠合。

46. 发明申请

US20140183486A1 NOVEL COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE, AND ORGANIC ELECTROLUMINESCENCE DEVICE 有权
标题翻译：新型化合物，有机电致发光器件的材料和有机电致发光器件
公开(公告)号：US20140183486A1
公开(公告)日：2014-07-03
申请号：US14116896
申请日：2012-05-09
申请人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
发明人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
IPC分类号： H01L51/00 , H01L51/50
CPC分类号： H01L51/50 , C07D209/86 , C07D307/91 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C09K11/06 , C09K2211/1007 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/5016 , H01L51/5056 , H01L51/5088 , H01L51/5096 , H05B33/14
摘要： A specific material for organic electroluminescence device having m-phenylene skeleton in its molecule realizes a highly heat-resistant and long lifetime organic electroluminescence device capable of driving at low voltage with high efficiency.
摘要翻译：在其分子中具有间亚苯基骨架的有机电致发光元件的具体材料实现了能够以低效率高效率驱动的高耐热且长寿命的有机电致发光器件。

47. 发明申请

US20140175419A1 FUSED HETEROCYCLIC AROMATIC DERIVATIVE, ORGANIC ELECTROLUMINESCENCE ELEMENT MATERIAL, AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME 有权
标题翻译：熔融杂环芳族衍生物，有机电致发光元素材料和有机电致发光元件
公开(公告)号：US20140175419A1
公开(公告)日：2014-06-26
申请号：US14234533
申请日：2012-09-11
申请人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
发明人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
IPC分类号： H01L51/00
CPC分类号： H01L51/0067 , C07D307/91 , C07D333/76 , C07D519/00 , C09B57/00 , C09B69/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0073 , H01L51/0074 , H01L51/0085 , H01L51/5016 , H05B33/10
摘要： A compound represented by the following formula (1). In the formula, A1 is O, S, Si(Ar1)(Ar2), P(═O)(Ar3)(Ar4), a substituted or unsubstituted arylene group including 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group including 5 to 30 ring atoms.
摘要翻译：由下式（1）表示的化合物。式中，A 1为O，S，Si（Ar 1）（Ar 2），P（= O）（Ar 3）（Ar 4），取代或未取代的碳原子数为6〜30的亚芳基或取代或未取代的亚杂芳基包括5至30个环原子。

48. 发明申请

US20140155176A1 GAME SYSTEM UTILIZING NETWORK 有权
标题翻译：游戏系统使用网络
公开(公告)号：US20140155176A1
公开(公告)日：2014-06-05
申请号：US14234894
申请日：2012-08-01
申请人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
发明人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
IPC分类号： A63F13/30
CPC分类号： A63F13/795 , A63F13/12 , A63F13/30 , A63F13/79 , A63F2300/5566 , A63F2300/6054 , A63F2300/8047
摘要： This game system (1) includes multiple game machines (2A, 2B) connected to a network (5), allows a player of a game machine to select one of selective items on a game prepared in advance, and allows the player to play a game having content reflecting the selected item. This game system is provided with a device (32) for storing relation data for determining whether or not a predetermined connection exists between players, a device (11) for determining the selection state pertaining to the items selected by the players on the game machines, a device (11, 12) for determining, based on the relation data, other players that have the predetermined connection with the player, and a device (21) which, when the player is making the selection from the selective items, presents the player making the selection with the selection state of other players having the predetermined connection with that player.
摘要翻译：该游戏系统（1）包括连接到网络（5）的多个游戏机（2A，2B），允许游戏机的玩家选择预先准备的游戏中的选择项之一，并且允许玩家播放具有反映所选项目的内容的游戏。本游戏系统具备：用于存储用于确定玩家之间是否存在预定连接的关系数据的装置（32），用于确定与玩家在游戏机上选择的项目有关的选择状态的装置（11）一种用于根据关系数据确定与玩家具有预定连接的其他玩家的装置（11,12），以及当玩家从选择项目进行选择时向玩家提供玩家的装置（21,12）以与该玩家具有预定连接的其他玩家的选择状态进行选择。

49. 发明授权

US08735906B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08735906B2
公开(公告)日：2014-05-27
申请号：US13259344
申请日：2010-04-05
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/15
CPC分类号： H01L29/7813 , H01L29/0623 , H01L29/0696 , H01L29/1608 , H01L29/42368 , H01L29/45 , H01L29/66068
摘要： The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer with a bottom surface formed on a portion of the semiconductor layer under the body region, source regions of the first conductivity type formed on a surface layer portion of the body region adjacently to side surfaces of the gate trench, a gate insulating film formed on the bottom surface and the side surfaces of the gate trench so that the thickness of a portion on the bottom surface is greater than the thickness of portions on the side surfaces, a gate electrode embedded in the gate trench through the gate insulating film, and an implantation layer formed on a portion of the semiconductor layer extending from the bottom surface of the gate trench to an intermediate portion of the semiconductor layer in the thickness direction by implantation of a second conductivity type impurity.
摘要翻译：根据本发明的半导体器件包括由SiC制成的第一导电类型的半导体层，形成在半导体层的表面层部分上的第二导电类型的体区，从半导体层，其具有形成在所述体区域的所述半导体层的一部分上的底面，所述第一导电型的源极区域形成在所述主体区域的与所述栅极沟槽的侧面相邻的表面层部分上，形成栅极绝缘膜在栅极沟槽的底表面和侧表面上，使得底表面上的部分的厚度大于侧表面上的部分的厚度，通过栅极绝缘膜嵌入栅极沟槽中的栅电极，以及所述注入层形成在所述半导体层的从所述栅极沟槽的底表面延伸到所述半导体的中间部分的部分上通过注入第二导电型杂质在厚度方向上的导体层。

50. 发明授权

US08575599B2 Compound for organic thin film transistor and organic thin film transistor using the same 有权
标题翻译：用于有机薄膜晶体管的化合物和使用其的有机薄膜晶体管
公开(公告)号：US08575599B2
公开(公告)日：2013-11-05
申请号：US13057820
申请日：2009-08-05
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
IPC分类号： H01L35/24
CPC分类号： C07C15/20 , C07C43/2055 , C07C2603/52 , H01L51/0055 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A compound for an organic thin film transistor having a structure of the following formula (1): wherein R1 to R6 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms (the alkyl groups may be combined with each other to form a ring structure containing the nitrogen atom), an alkylsulfonyl group having 1 to 30 carbon atoms, a haloalkylsulfonyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent, provided that the compound in which all of R1 to R6 are a hydrogen atom is excluded.
摘要翻译：一种具有下式（1）结构的有机薄膜晶体管的化合物：其中R 1至R 6独立地为氢原子，卤素原子，具有1至30个碳原子的烷基，具有1至30个碳原子的卤代烷基碳原子，碳原子数1〜30的烷氧基，碳原子数1〜30的卤代烷氧基，碳原子数1〜30的烷硫基，碳原子数1〜30的卤代烷硫基，碳原子数为1〜30的烷基氨基碳原子，碳原子数2〜60的二烷基氨基（烷基可以相互结合形成含有氮原子的环结构），碳原子数1〜30的烷基磺酰基，碳原子数1〜30的卤代烷基磺酰基碳原子数为6〜60的芳香族烃基，碳原子数3〜60的芳香族杂环基，碳原子数3〜20的烷基甲硅烷基，碳原子数5〜60的烷基甲硅烷基乙炔基或氰基，其各自可以具有取代基，条件是其中R1至R6全部为氢原子的化合物被排除。

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