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41. 发明授权

US07943984B2 Nonvolatile semiconductor memory apparatus 有权
标题翻译：非易失性半导体存储装置
公开(公告)号：US07943984B2
公开(公告)日：2011-05-17
申请号：US12233023
申请日：2008-09-18
申请人： Masahiro Koike , Yuuichiro Mitani , Yasushi Nakasaki , Masato Koyama
发明人： Masahiro Koike , Yuuichiro Mitani , Yasushi Nakasaki , Masato Koyama
IPC分类号： H01L29/792
CPC分类号： H01L27/11521 , H01L27/11568
摘要： A nonvolatile semiconductor memory apparatus includes: a memory element including: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate located between the source region and the drain region, having sites that perform electron trapping and releasing and are formed by adding an element different from a base material, and including insulating layers having different dielectric constants, the sites having a higher level than a Fermi level of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：一种非易失性半导体存储装置，包括：存储元件，包括：半导体衬底; 在半导体衬底中形成为彼此间隔一定距离的源极区域和漏极区域; 形成在位于源极区域和漏极区域之间的半导体衬底的一部分上的第一绝缘膜，具有进行电子俘获和释放的位置，并且通过添加不同于基底材料的元件形成，并且包括具有不同电介质的绝缘层常数，具有比形成半导体衬底的材料的费米能级高的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

42. 发明授权

US07911206B2 Method and apparatus for evaluating length of defect in eddy current testing 有权
标题翻译：用于评估涡流测试中缺陷长度的方法和装置
公开(公告)号：US07911206B2
公开(公告)日：2011-03-22
申请号：US11771436
申请日：2007-06-29
申请人： Akira Nishimizu , Yoshio Nonaka , Isao Yoshida , Motoyuki Nakamura , Akihiro Taki , Masahiro Koike
发明人： Akira Nishimizu , Yoshio Nonaka , Isao Yoshida , Motoyuki Nakamura , Akihiro Taki , Masahiro Koike
IPC分类号： G01N27/82 , G01N27/72
CPC分类号： G01N27/9046
摘要： The surface length of a metal subject to be inspected is evaluated by detecting an eddy current without using a combination of a scale and visual or liquid penetrant inspection. An exciting coil and a detecting coil are scanned above the subject in a length direction. An eddy current detector measures an output voltage corresponding to scanning positions based on an output from the detecting coil. Based on an output voltage distribution curve indicating a distribution of output voltages corresponding to the scanning positions, position information is extracted corresponding to values which are within a differential voltage range and lower by 12 dB than a maximum value of the output voltages on the left and right sides of the distribution. A distance between the positions included in the extracted information is calculated to evaluate the length of a slit which is a defect present on the subject surface.
摘要翻译：要检查的金属的表面长度通过检测涡流来评估，而不使用水垢和视觉或液体渗透剂检查的组合。激光线圈和检测线圈在长度方向上扫描被检体的上方。涡电流检测器基于来自检测线圈的输出来测量对应于扫描位置的输出电压。基于表示与扫描位置对应的输出电压分布的输出电压分布曲线，对应于在差分电压范围内并且比左侧的输出电压的最大值低12dB的值提取位置信息，右侧分配。计算提取的信息中包含的位置之间的距离，以评估作为被摄体表面上存在的缺陷的狭缝的长度。

43. 发明申请

US20080135922A1 Nonvolatile semiconductor memory device and method for manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20080135922A1
公开(公告)日：2008-06-12
申请号：US11898603
申请日：2007-09-13
申请人： Yuichiro Mitani , Masahiro Koike , Yasushi Nakasaki , Daisuke Matsushita
发明人： Yuichiro Mitani , Masahiro Koike , Yasushi Nakasaki , Daisuke Matsushita
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L29/7881 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/513 , H01L29/792
摘要： A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.
摘要翻译：非易失性半导体存储器件包括：存储元件，所述存储元件包括：半导体衬底; 第一绝缘膜，形成在位于源区和漏区之间的半导体衬底的区域上，并且具有依次形成有第一绝缘层，第二绝缘层和第三绝缘层的堆叠结构，第一绝缘膜包含电子俘获位置的绝缘层，不包含电子俘获位置的第二绝缘层和包含电子捕获位点的第三绝缘层，并且电子捕获位点位于低于第一至第三区域的导带最小值的位置绝缘层位于高于形成半导体衬底的材料的导带最小值的位置; 形成在所述第一绝缘膜上的电荷存储膜; 形成在电荷存储膜上的第二绝缘膜; 以及形成在所述第二绝缘膜上的控制栅电极。

44. 发明申请

US20080125019A1 Polishing Pad and a Chemical-Mechanical Polishing Method 审中-公开
标题翻译：抛光垫和化学机械抛光方法
公开(公告)号：US20080125019A1
公开(公告)日：2008-05-29
申请号：US11941603
申请日：2007-11-16
申请人： Li Jiang , Wei Zang , Hua Ji , Masahiro Koike
发明人： Li Jiang , Wei Zang , Hua Ji , Masahiro Koike
IPC分类号： B24B1/00
CPC分类号： B24B37/26
摘要： The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 μm, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily separated from the polishing pad surface.
摘要翻译：本发明提供一种抛光垫，其抛光面上具有平坦度区域和压花区域，其中平坦度区域是粗糙度小于20μm的平坦表面，用于抛光晶片; 压花区域具有凹槽，孔或其组合，用于在抛光之后从抛光表面拉起晶片。通过使用根据本发明的抛光垫，化学机械抛光（CMP）后，晶片可具有更高的表面平整度; 并且在抛光之后，将晶片移动到抛光垫的压花区域，使得晶片可以容易地与抛光垫表面分离。

45. 发明申请

US20080079426A1 EDDY CURRENT TESTING APPARATUS AND EDDY CURRENT TESTING METHOD 审中-公开
标题翻译： EDDY电流测试装置和EDDY电流测试方法
公开(公告)号：US20080079426A1
公开(公告)日：2008-04-03
申请号：US11862897
申请日：2007-09-27
申请人： Yutaka Suzuki , Masahiro Koike , Tetsuya Matsui , Kojirou Kodaira , Katsumi Isaka , Mitsuru Odakura , Kenji Tayama , Kazuhiro Suzuki , Kenji Kumasaka , Yuuji Adachi
发明人： Yutaka Suzuki , Masahiro Koike , Tetsuya Matsui , Kojirou Kodaira , Katsumi Isaka , Mitsuru Odakura , Kenji Tayama , Kazuhiro Suzuki , Kenji Kumasaka , Yuuji Adachi
IPC分类号： G01N27/90
CPC分类号： G01N27/902
摘要： The eddy current testing apparatus includes a probe having an eddy current testing sensor including a pair of eddy current testing coils. The apparatus also includes an eddy current testing flaw detector inputting detection signals from the eddy current testing sensor. The diameter of a magnetic core used in each of the pair of eddy current testing coils is within the range of 0.1 mm to 0.5 mm.
摘要翻译：涡流检测装置包括具有包括一对涡流检测线圈的涡流检测传感器的探头。该设备还包括涡流测试探伤仪输入来自涡流测试传感器的检测信号。在一对涡流测试线圈中使用的磁芯的直径在0.1mm至0.5mm的范围内。

46. 发明授权

US07348644B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07348644B2
公开(公告)日：2008-03-25
申请号：US11407077
申请日：2006-04-20
申请人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
发明人： Masahiro Koike , Masato Koyama , Tsunehiro Ino , Yuuichi Kamimuta , Akira Takashima , Masamichi Suzuki , Akira Nishiyama
IPC分类号： H01L29/94
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/517 , H01L29/518
摘要： Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.
摘要翻译：公开了一种半导体器件，其包括基板，形成在基板上方并且包含金属Si，N和O的绝缘膜，所述绝缘膜含有大于金属 - 金属键和金属-Si键的总和的金属-N键，以及形成在绝缘膜上方的电极。

47. 发明授权

US07265444B2 Resin molded semiconductor device 有权
标题翻译：树脂模制半导体器件
公开(公告)号：US07265444B2
公开(公告)日：2007-09-04
申请号：US10870023
申请日：2004-06-18
申请人： Masahiro Koike , Hirochika Narita
发明人： Masahiro Koike , Hirochika Narita
IPC分类号： H01L23/10 , H01L23/34
CPC分类号： H01L27/14825 , H01L23/047 , H01L23/10 , H01L27/14806 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/15747 , H01L2924/16195 , H01L2924/00014 , H01L2924/00
摘要： To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature.A resin molded semiconductor device including a heat sink having a support face with a semiconductor chip mounted thereon electrically connected to a lead frame, a resin molded case forms a space for accommodating the semiconductor chip therein, and has an opening on an upper face thereof defined by side walls including a plurality of linearly arrayed resin projections above a top surface portion of the side walls, and molds the lead frame and heat sink, and a glass cap closing the opening and secured to the resin molded case by a bonding agent layer. The case has a thermal coefficient of expansion matched with that of the heat sink, and mechanical stress between the case and the cap is absorbed by the bonding agent layer having a thickness greater that the height of the linearly arrayed resin projections above the top surface portion of the side walls.
摘要翻译：为了通过降低由于温度变化而安装在其上的具有一维CCD元件的CCD器件的屈曲来提供优异的图像。一种树脂模制半导体器件，包括散热器，该散热器具有安装在其上的半导体芯片的支撑面，电连接到引线框架，树脂模制壳体形成用于容纳半导体芯片的空间，并且在其上表面上具有限定的开口通过侧壁包括在侧壁的顶表面部分上方的多个线性排列的树脂突起，并且模制引线框架和散热器，以及玻璃盖，其封闭开口并通过粘合剂层固定到树脂模制壳体。壳体具有与散热器的热膨胀系数相匹配的热膨胀系数，壳体和盖子之间的机械应力被粘合剂层吸收，该粘合剂层的厚度大于顶表面部分上方的线性排列的树脂突起的高度的侧壁。

48. 发明授权

US07093490B2 Ultrasonic flaw detecting method and ultrasonic flaw detector 有权
标题翻译：超声波探伤法和超声波探伤仪
公开(公告)号：US07093490B2
公开(公告)日：2006-08-22
申请号：US11049949
申请日：2005-02-04
申请人： Naoyuki Kono , Tetsuya Matsui , Masahiro Koike , Masahiro Tooma , Yoshinori Musha , Masahiro Miki
发明人： Naoyuki Kono , Tetsuya Matsui , Masahiro Koike , Masahiro Tooma , Yoshinori Musha , Masahiro Miki
IPC分类号： G01N9/24
CPC分类号： G01N29/262 , G01N29/07 , G01N2291/0232 , G01N2291/0421 , G01N2291/0422 , G01N2291/106
摘要： In order to make it possible in ultrasonic flaw detection to generate ultrasonic waves containing a main beam only by use of an array probe and clearly identify a defect in a specimen by use of images, an element pitch P (the distance between centers of adjacent ultrasonic transducer elements in the array probe) is set longer than ¼ of the wavelength of longitudinal waves generated by the ultrasonic transducer elements and shorter than ½ of the wavelength and reception signals up to time corresponding to the sum of wall thickness round-trip propagation time for longitudinal waves and wall thickness round-trip propagation time for shear waves in the specimen are displayed.
摘要翻译：为了在超声波探伤中可以通过使用阵列探针产生包含主光束的超声波，并通过使用图像清楚地识别样本中的缺陷，元素间距P（相邻超声波中心之间的距离阵列探头中的换能器元件）被设置为比由超声换能器元件产生的纵波的波长的1/4，并且短于对应于壁厚往返传播时间之和的波长和接收信号的1/2的一半显示样品中剪切波的纵波和壁厚往返传播时间。

49. 发明申请

US20060071321A1 Resin molded semiconductor device and mold 有权
标题翻译：树脂模制半导体器件和模具
公开(公告)号：US20060071321A1
公开(公告)日：2006-04-06
申请号：US11235182
申请日：2005-09-27
申请人： Masahiro Koike , Hirochika Narita
发明人： Masahiro Koike , Hirochika Narita
IPC分类号： H01L23/52
CPC分类号： H01L27/14825 , H01L23/047 , H01L23/10 , H01L27/14806 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/15747 , H01L2924/16195 , H01L2924/00014 , H01L2924/00
摘要： To provide an excellent image by reducing buckling of a CCD device having one-dimensional CCD elements mounted thereon due to changes in temperature. Blackening treated iron or iron-based alloy is used as a material of a heat sink 11 having a one-dimensional CCD element 14 mounted thereon. The thermal coefficient of expansion of the heat sink 21 is matched with that of a hollow molded case 12 for integrally molding the heat sink 11 and a lead frame 20. A plurality of projections 21 formed on the side of the hollow molded case 12 are disposed at a bonding interface between the glass cap 13 which closes an upper opening of the hollow molded case 12 and side walls of hollow molded case 12.
摘要翻译：为了通过降低由于温度变化而安装在其上的具有一维CCD元件的CCD器件的屈曲来提供优异的图像。使用黑化处理的铁或铁基合金作为其上安装有一维CCD元件14的散热器11的材料。散热器21的热膨胀系数与用于一体地模制散热器11和引线框架20的中空模制壳体12的热膨胀系数相匹配。形成在中空成型壳体12一侧的多个突起21设置在封闭中空成型壳体12的上部开口的玻璃盖13和中空成型壳体12的侧壁之间的接合界面处。

50. 发明授权

US5663502A Method and apparatus for measuring thickness of layer using acoustic waves 失效
标题翻译：使用声波测量层厚度的方法和装置
公开(公告)号：US5663502A
公开(公告)日：1997-09-02
申请号：US544932
申请日：1995-10-18
申请人： Yoshiaki Nagashima , Kenichi Fujiwara , Masao Sato , Fuminobu Takahashi , Masahiro Koike , Hajime Umehara , Yoshihiro Michiguchi
发明人： Yoshiaki Nagashima , Kenichi Fujiwara , Masao Sato , Fuminobu Takahashi , Masahiro Koike , Hajime Umehara , Yoshihiro Michiguchi
IPC分类号： G01B17/02 , G01N29/11 , G01N29/46 , G01N29/08 , G01N29/10
CPC分类号： G01N29/46 , G01B17/025 , G01N29/11 , G01N2291/014 , G01N2291/015 , G01N2291/0231 , G01N2291/02854 , G01N2291/0421 , G01N2291/0422 , G01N2291/0428 , G01N2291/044 , G01N2291/048
摘要： Ultrasonic waves from a transmit device are transmitted to an object subject to measurement. A surface reflected wave propagated in a contact medium and reflected at the surface of a tube and bottom surface reflected waves passing through an oxidation layer on the tube and reflected at the inner surface of the tube are convened into electric signals. A feature extracting part 5, in consideration of a correlation relationship of energy with respect to the frequency of a received signal, based on the received signal of ultrasonic waves converted to electric signals, extracts a signal feature data determined beforehand which has a strong correlation relationship with the thickness of a measured part. Based on the extracted signal feature data, a thickness conversion part references a relationship storage part which has stored therein beforehand a function that shows a relationship between the signal feature data and the thickness of the oxidation layer, and obtains the thickness of the oxidation layer.
摘要翻译：来自发送装置的超声波被发送到被测物体。在接触介质中传播并在管表面反射的表面反射波和底面反射通过管上的氧化层并在管的内表面反射的反射波被转换为电信号。考虑到能量相对于接收信号的频率的相关关系的特征提取部分5，基于被转换为电信号的超声波的接收信号，提取预先确定的具有强相关关系的信号特征数据具有测量部分的厚度。基于所提取的信号特征数据，厚度转换部分参考预先存储在其中的信息特征数据与氧化层的厚度之间的关系的函数的关系存储部分，并获得氧化层的厚度。

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