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41. 发明授权

US09178095B2 High-efficiency solar-cell arrays with integrated devices and methods for forming them 有权
标题翻译：具有集成器件的高效率太阳能电池阵列及其形成方法
公开(公告)号：US09178095B2
公开(公告)日：2015-11-03
申请号：US14096513
申请日：2013-12-04
申请人： John J. Hennessy , Andrew C. Malonis , Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
发明人： John J. Hennessy , Andrew C. Malonis , Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
IPC分类号： H01L31/05 , H01L31/02 , H01L27/142 , H01L31/0687
CPC分类号： H01L31/05 , H01L27/1421 , H01L31/02021 , H01L31/06875 , Y02E10/544 , Y02P70/521
摘要： In various embodiments, an array of discrete solar cells with associated devices such as bypass diodes is formed over a single substrate.
摘要翻译：在各种实施例中，在单个衬底上形成具有诸如旁路二极管的相关器件的分立太阳能电池阵列。

42. 发明授权

US08748292B2 Methods of forming strained-semiconductor-on-insulator device structures 有权
标题翻译：形成应变绝缘体上半导体器件结构的方法
公开(公告)号：US08748292B2
公开(公告)日：2014-06-10
申请号：US11073780
申请日：2005-03-07
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L21/30 , H01L29/06 , H01L21/762 , H01L29/786 , H01L29/66 , H01L27/12 , H01L29/78 , H01L21/84 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/66916 , H01L29/7842 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

43. 发明申请

US20120125203A1 Water purification and enhancement systems 有权
标题翻译：水净化和增强系统
公开(公告)号：US20120125203A1
公开(公告)日：2012-05-24
申请号：US13137507
申请日：2011-08-22
申请人： Eugene A. Fitzgerald , Ya-Hong Xie , Thomas Langdo , Richard Renjilian , Carl V. Thompson
发明人： Eugene A. Fitzgerald , Ya-Hong Xie , Thomas Langdo , Richard Renjilian , Carl V. Thompson
IPC分类号： A47J31/44 , B01D35/28 , B01D63/00 , C02F9/04 , B01D24/10 , C02F1/28 , C02F101/20 , C02F101/12
CPC分类号： B01D35/143 , B01D27/146 , B01D29/56 , B01D63/00 , C02F1/001 , C02F1/003 , C02F1/004 , C02F1/008 , C02F1/281 , C02F1/283 , C02F1/44 , C02F1/444 , C02F1/50 , C02F1/68 , C02F1/688 , C02F1/76 , C02F9/00 , C02F9/005 , C02F2101/103 , C02F2101/12 , C02F2303/04 , C02F2303/185 , C02F2305/14 , C02F2307/10
摘要： Water purification system comprising filtration media sized with respect to each other to allow a first contaminant in the water to saturate the first medium with a delay prior to saturation of the second medium with a second contaminant.
摘要翻译：水净化系统包括相对于彼此大小的过滤介质，以允许水中的第一污染物在具有第二污染物的第二介质饱和之前延迟饱和第一介质。

44. 发明授权

US08063397B2 Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission 有权
标题翻译：半导体发光结构和提供黄绿色发光的渐变组成基板
公开(公告)号：US08063397B2
公开(公告)日：2011-11-22
申请号：US11823860
申请日：2007-06-28
申请人： Michael J. Mori , Eugene A. Fitzgerald
发明人： Michael J. Mori , Eugene A. Fitzgerald
IPC分类号： H01L29/06
CPC分类号： H01L33/30 , H01L33/12
摘要： Semiconductor light-emitting structures are shown on engineered substrates having a graded composition. The composition of the substrate may be graded to achieve a lattice constant on which a yellow-green light-emitting semiconductor material may be disposed. In some embodiments, the structure may be substantially free of aluminum.
摘要翻译：半导体发光结构显示在具有渐变组成的工程衬底上。可以对衬底的组成进行分级，以达到可以设置黄绿色发光半导体材料的晶格常数。在一些实施方案中，该结构可以基本上不含铝。

45. 发明授权

US08026534B2 III-V semiconductor device structures 有权
标题翻译： III-V半导体器件结构
公开(公告)号：US08026534B2
公开(公告)日：2011-09-27
申请号：US12907787
申请日：2010-10-19
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L31/102
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

46. 发明授权

US08012592B2 Monolithically integrated semiconductor materials and devices 有权
标题翻译：单片集成半导体材料和器件
公开(公告)号：US08012592B2
公开(公告)日：2011-09-06
申请号：US11591333
申请日：2006-11-01
申请人： Eugene A. Fitzgerald
发明人： Eugene A. Fitzgerald
IPC分类号： B32B9/04 , B32B13/04 , B32B9/00 , B32B19/00 , H01L29/66 , H01L21/02
CPC分类号： H01L27/14601 , H01L21/0245 , H01L21/0251 , H01L21/76254 , H01L21/8258 , H01L27/0605 , H01L27/144 , H01L27/1446 , H01L27/14683 , H01L27/15 , H01L27/156 , H01L31/0328 , H01L31/143 , H01L31/162 , H01L2924/0002 , Y10S438/933 , H01L2924/00
摘要： Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a semiconductor structure includes a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The semiconductor structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region, a monocrystalline silicon layer disposed over the insulating layer in the first region, and a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region. The second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon.
摘要翻译：提供了单晶硅和单晶非硅材料和器件单片集成的方法和结构。在一种结构中，半导体结构包括硅衬底和设置在硅衬底上的第一单晶半导体层，其中第一单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。半导体结构还包括设置在第一区域中的第一单晶半导体层上的绝缘层，设置在第一区域中的绝缘层上的单晶硅层和设置在第一单晶的至少一部分上的第二单晶半导体层半导体层在第二区域中并且不存在于第一区域中。第二单晶半导体层具有与松弛硅的晶格常数不同的晶格常数。

47. 发明申请

US20110124146A1 METHODS OF FORMING HIGH-EFFICIENCY MULTI-JUNCTION SOLAR CELL STRUCTURES 审中-公开
标题翻译：形成高效多结晶太阳能电池结构的方法
公开(公告)号：US20110124146A1
公开(公告)日：2011-05-26
申请号：US12790078
申请日：2010-05-28
申请人： Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
发明人： Arthur J. Pitera , Eugene A. Fitzgerald , Steven A. Ringel
IPC分类号： H01L31/18
CPC分类号： H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , H01L31/0745 , H01L31/076 , H01L31/1804 , H01L31/1812 , H01L31/1852 , Y02E10/544 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： In various embodiments, solar cells include a junction including SiGe, a junction including at least one III-V material, and may be formed on silicon substrates and/or with silicon-based capping layers thereover.
摘要翻译：在各种实施例中，太阳能电池包括包括SiGe的结，包括至少一种III-V材料的结，并且可以形成在硅衬底和/或其上的硅基覆盖层上。

48. 发明授权

US07791107B2 Strained tri-channel layer for semiconductor-based electronic devices 有权
标题翻译：用于基于半导体的电子器件的应变三沟道层
公开(公告)号：US07791107B2
公开(公告)日：2010-09-07
申请号：US10869463
申请日：2004-06-16
申请人： Saurabh Gupta , Minjoo Larry Lee , Eugene A. Fitzgerald
发明人： Saurabh Gupta , Minjoo Larry Lee , Eugene A. Fitzgerald
IPC分类号： H01L21/3205
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/4916 , H01L29/4925 , H01L29/495 , H01L29/4966
摘要： A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconductor layer. A method for making an electronic device includes providing, on a strain-inducing substrate, a first tensilely strained layer, forming a compressively strained layer on the first tensilely strained layer, and forming a second tensilely strained layer on the compressively strained layer. The first and second tensilely strained layers can be formed of silicon, and the compressively strained layer can be formed of silicon and germanium.
摘要翻译：基于半导体的结构包括衬底层，与衬底层相邻的压缩应变半导体层以提供用于部件的沟道，以及布置在衬底层和压缩应变半导体层之间的拉伸应变半导体层。一种制造电子器件的方法包括在应变诱导基片上提供第一拉伸应变层，在第一拉伸应变层上形成压缩应变层，以及在压缩应变层上形成第二拉伸应变层。第一和第二拉伸应变层可以由硅形成，并且压缩应变层可以由硅和锗形成。

49. 发明授权

US07465619B2 Methods of fabricating dual layer semiconductor devices 有权
标题翻译：制造双层半导体器件的方法
公开(公告)号：US07465619B2
公开(公告)日：2008-12-16
申请号：US11130575
申请日：2005-05-17
申请人： Eugene A. Fitzgerald
发明人： Eugene A. Fitzgerald
IPC分类号： H01L21/8238
CPC分类号： H01L29/7842 , H01L21/823807 , H01L29/1054 , Y10S438/933
摘要： A semiconductor-based device includes a channel layer, which includes a distal layer and a proximal layer in contact with the distal layer. The distal layer supports at least a portion of hole conduction for at least one p-channel component, and the proximal layer supports at least a portion of electron conduction for at least one n-channel component. The proximal layer has a thickness that permits a hole wave function to effectively extend from the proximal layer into the distal layer to facilitate hole conduction by the distal layer. A method for fabricating a semiconductor-based device includes providing a distal portion of a channel layer and providing a proximal portion of the channel layer.
摘要翻译：基于半导体的器件包括沟道层，其包括远端层和与远端层接触的近端层。远端层支撑至少一个p沟道分量的至少一部分空穴传导，并且近端支撑至少一个n沟道分量的至少一部分电子传导。近端层具有允许空穴波函数从近端层有效地延伸到远侧层中的厚度，以便于远端层的空穴传导。一种用于制造基于半导体的器件的方法包括提供沟道层的远端部分并提供沟道层的近端部分。

50. 发明申请

US20080128751A1 METHODS FOR FORMING III-V SEMICONDUCTOR DEVICE STRUCTURES 有权
标题翻译：用于形成III-V半导体器件结构的方法
公开(公告)号：US20080128751A1
公开(公告)日：2008-06-05
申请号：US11943188
申请日：2007-11-20
申请人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
发明人： Thomas A. Langdo , Matthew T. Currie , Richard Hammond , Anthony J. Lochtefeld , Eugene A. Fitzgerald
IPC分类号： H01L29/20 , H01L21/30
CPC分类号： H01L29/7847 , H01L21/28518 , H01L21/76254 , H01L21/76256 , H01L21/76259 , H01L21/76264 , H01L21/76275 , H01L21/84 , H01L27/1203 , H01L29/0649 , H01L29/1033 , H01L29/165 , H01L29/41783 , H01L29/66242 , H01L29/66628 , H01L29/66772 , H01L29/66787 , H01L29/66916 , H01L29/7842 , H01L29/7843 , H01L29/7849 , H01L29/785 , H01L29/78603 , H01L29/78684 , H01L29/78687
摘要： The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
摘要翻译：应变半导体的优点与基板和器件制造上的绝缘体绝缘体方法相结合。

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