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    • 41. 发明授权
    • Memory device and method for operating the same
    • 存储器件及其操作方法
    • US07542346B2
    • 2009-06-02
    • US11704204
    • 2007-02-09
    • Sang-Jin ParkYoung-Soo ParkSang-Min ShinYoung-Kwan Cha
    • Sang-Jin ParkYoung-Soo ParkSang-Min ShinYoung-Kwan Cha
    • G11C16/04
    • G11C16/0416B82Y10/00G11C2216/06H01L29/42332H01L29/7881
    • A memory device and method for operating the same are provided. The example method may be directed to a method of performing a memory operation on a memory device, and may include applying a negative voltage bias to the memory device during a programming operation of the memory device and applying a positive voltage bias to the memory device during an erasing operation of the memory device. The example memory device may include a substrate and a gate structure formed on the substrate, the gate structure exhibiting a faster flat band voltage shift under a negative voltage bias than under a positive voltage bias, the gate structure receiving a negative voltage bias during a programming of the memory device and receiving a positive voltage bias during an erasing operation of the memory device.
    • 提供了一种用于操作该存储器件的存储器件和方法。 示例性方法可以针对在存储器件上执行存储器操作的方法,并且可以包括在存储器件的编程操作期间向存储器件施加负电压偏压,并且在存储器件期间向存储器件施加正电压偏压 存储器件的擦除操作。 示例性存储器件可以包括衬底和形成在衬底上的栅极结构,栅极结构在负电压偏压下比在正电压偏压下表现出更快的平带电压偏移,栅极结构在编程期间接收负电压偏置 并且在存储器件的擦除操作期间接收正电压偏置。
    • 45. 发明授权
    • Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same
    • 离轴投影光学系统和使用其的极紫外光刻设备
    • US07301694B2
    • 2007-11-27
    • US11453775
    • 2006-06-16
    • Seung-Hyuk ChangI-Hun SongYoung-Soo ParkSuk-Pil KimHoon Kim
    • Seung-Hyuk ChangI-Hun SongYoung-Soo ParkSuk-Pil KimHoon Kim
    • G02B5/08
    • G03F7/70241G03F7/70941
    • Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.
    • 示例性实施例涉及一种离轴投影光学系统,其包括非轴向布置的第一和第二反射镜。 第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。 第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。 从物点到第一反射镜10的光束的入射角度可以为1&lt; 1&gt;,从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1,R 1,R 2,R 2,R 2,R 1,R 2, SUB>和i <2>可以满足以下等式<?in-line-formula description =“In-line Formulas”end =“lead”?> R 1t cos α-in-line-formula description =“In-line Formulas”end =“tail”?> R&lt; 1s&lt; 1&lt; 1&lt; 1&lt; i <?in-line-formula description =“In-line Formulas”end =“tail”?> <?in-line-formula description =“In-line Formulas”end =“lead “?”R 2s 2 = R 2t 2&lt; 2&lt; 2&lt; 2&lt;&lt;行内公式描述= “直线公式”end =“tail”?>
    • 46. 发明申请
    • Apparatus and method for character entry in a portable terminal
    • 便携式终端中字符输入的装置和方法
    • US20070229316A1
    • 2007-10-04
    • US11605357
    • 2006-11-29
    • Young-Soo ParkJae-Gwa Lee
    • Young-Soo ParkJae-Gwa Lee
    • H03M11/00
    • G06F3/0237
    • A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and a character among the displayed characters is marked with a selection indication. When a move key is pressed, the selection indication is moved according to the direction of the move key. When an OK key is pressed, the character marked with the selection indication is entered.
    • 提供了一种终端中的字符输入方法和装置,其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中,当按下表示代表性字符的键时,显示属于由代表字符表示的字符集的字符,并且显示字符中的字符用选择指示标记。 当按下移动键时,根据移动键的方向移动选择指示。 按OK键后,输入标有选择指示的字符。
    • 47. 发明申请
    • Apparatus and method for character entry in a portable terminal
    • 便携式终端中字符输入的装置和方法
    • US20070229314A1
    • 2007-10-04
    • US11598028
    • 2006-11-13
    • Young-Soo ParkJae-Gwa Lee
    • Young-Soo ParkJae-Gwa Lee
    • H03M11/00
    • G06F3/0236
    • A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and any one of the displayed characters is marked with a selection indication. When a move key is pressed, the duration of the key press of the move key is measured and the selection indication is sequentially moved. When input of the move key is released, a character marked with the selection indication is entered.
    • 提供了一种终端中的字符输入方法和装置,其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。 在字符输入方法中,当按下表示代表性字符的键时,显示属于由代表字符表示的字符集的字符,并且显示字符中的任何一个用选择指示标记。 当按下移动键时,测量移动键的按键持续时间,顺序移动选择指示。 当释放移动键的输入时,输入标有选择指示的字符。
    • 48. 发明申请
    • Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same
    • 制造取向控制单晶线的方法及其制造具有该晶体管的晶体管的方法
    • US20070017439A1
    • 2007-01-25
    • US11483586
    • 2006-07-11
    • Wenxu XianyuYoung-Soo ParkTakashi NoguchiHans ChoXiaoxin ZhangHuaxiang Yin
    • Wenxu XianyuYoung-Soo ParkTakashi NoguchiHans ChoXiaoxin ZhangHuaxiang Yin
    • C30B23/00C30B25/00C30B28/12C30B28/14
    • C30B29/06C30B25/005C30B29/08C30B29/60
    • Provided may be a method of fabricating nanowires and a method of fabricating a transistor having the same. The method may include: forming a template layer on a substrate, the template layer having a first lateral surface and a second lateral surface facing the first surface; forming pores in the template layer, the pores disposed between the first lateral surface and the second lateral surface in the template layer and having first apertures in the first lateral surface; forming a single-crystalline material layer contacting the first apertures disposed in the first lateral surface of the template layer; forming second apertures connecting pores disposed in the second lateral surface; supplying gaseous crystal growth materials through the second apertures; and forming crystalline nanowires in the pores by crystal growth from the single-crystalline material layer. The nanowires may be made of crystalline materials, e.g., Si or SiGe, and may be formed parallel to the substrate. Higher quality nanowires, whose orientation may be controlled, may be formed. A higher quality transistor may be formed on the substrate by applying a method of fabricating the nanowires.
    • 可以提供制造纳米线的方法和制造具有该纳米线的晶体管的方法。 该方法可以包括:在衬底上形成模板层,模板层具有第一侧表面和面向第一表面的第二侧表面; 在模板层中形成孔,孔设置在模板层中的第一侧表面和第二侧表面之间,并且在第一侧表面中具有第一孔; 形成与设置在模板层的第一侧表面中的第一孔接触的单晶材料层; 形成连接设置在所述第二侧表面中的孔的第二孔; 通过所述第二孔提供气态晶体生长材料; 以及通过从单晶材料层的晶体生长在孔中形成结晶纳米线。 纳米线可以由例如Si或SiGe的结晶材料制成,并且可以与基底平行地形成。 可以形成其取向可以被控制的更高质量的纳米线。 可以通过应用制造纳米线的方法在衬底上形成更高质量的晶体管。
    • 50. 发明申请
    • Reflection mask for EUV photolithography and method of fabricating the reflection mask
    • 用于EUV光刻的反射掩模和制造反射掩模的方法
    • US20060281017A1
    • 2006-12-14
    • US11441835
    • 2006-05-26
    • Suk-pil KimI-hun SongYoung-Soo ParkSeung-hyuk ChangHoon Kim
    • Suk-pil KimI-hun SongYoung-Soo ParkSeung-hyuk ChangHoon Kim
    • G21K5/00G03F1/00
    • G21K1/062B82Y10/00B82Y40/00G03F1/24
    • A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
    • 一种用于极紫外(EUV)光刻的反射掩模及其制造方法,其中反射掩模包括基板,在基板上形成为多层结构的下反射层,并且包括反射EUV光的材料, 在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层,并且产生来自上层的反射光之间的相消干涉 反射层和来自下反射层的反射光。 可以减少阴影效应的入射,并且可以消除不必要的EUV光,使得反射掩模上的图案可以精确地投影在硅晶片上。 由于相位反转层包括与反射层和吸收层相同的材料,因此可以容易地处理掩模制造工艺。