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41. 发明授权

US5463243A Dielectric isolated high voltage semiconductor device 失效
标题翻译：绝缘隔离高压半导体器件
公开(公告)号：US5463243A
公开(公告)日：1995-10-31
申请号：US147314
申请日：1993-11-05
申请人： Naoki Sakurai , Yoshitaka Sugawara
发明人： Naoki Sakurai , Yoshitaka Sugawara
IPC分类号： H01L21/762 , H01L27/06 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/78 , H01L29/861 , H02P6/08 , H01L27/12
CPC分类号： H01L29/402 , H01L21/76297 , H01L27/0623 , H01L29/0611 , H01L29/1083 , H01L29/7813 , H01L29/7824 , H01L29/8611 , H02P6/085 , H01L2924/0002
摘要： A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor supporter by applying the same reverse biasing voltage to the supporter and the islands. That is, in the structure, an electrode is provided at the back surface of the supporter and connected to a main electrode of the selected island. The above-mentioned main junction is the pn junction to which the reverse biasing voltage for securing the withstand voltage of the semiconductor device is applied.
摘要翻译：一种电介质隔离型高电压半导体器件，其具有通过向支撑体和岛施加相同的反向偏置电压而将主结的耗尽层延伸超过包含岛的绝缘层至半导体支撑体的布置。也就是说，在该结构中，电极设置在支撑体的后表面并连接到所选择的岛的主电极。上述主结是施加用于确保半导体器件的耐受电压的反向偏置电压的pn结。

42. 发明授权

US4212024A Solid-state switching circuit employing photon coupling suitable for construction in form of integrated circuit 失效
标题翻译：采用光耦合的固态开关电路适用于集成电路形式的结构
公开(公告)号：US4212024A
公开(公告)日：1980-07-08
申请号：US902498
申请日：1978-05-03
申请人： Yoshitaka Sugawara , Tatsuya Kamei
发明人： Yoshitaka Sugawara , Tatsuya Kamei
IPC分类号： H02H7/12 , H01L31/167 , H02M1/08 , H02M1/32 , H01L29/74
CPC分类号： H01L31/167
摘要： A solid-state switching circuit employing photon coupling, which is controlled by a control signal, comprises a control portion which includes at least one light-emitting diode and a load current carrying portion which is formed on a di-electric isolated substrate. The load current carrying portion has a light-activated silicon controlled rectifier, the switching operation of which is controlled by photons emitted from the light-emitting diode. A transistor and a resistor are connected between the gate terminal and the cathode terminal of the light-activated silicon controlled rectifier in parallel to each other. Between the base and the emitter electrodes of the transistor, a photodiode is connected, and between the electrode connected to the n-base layer and the gate electrode of the light-activated silicon controlled rectifier, a diode is connected. And the photodiode is also activated by the photons emitted from the light-emitting diode.
摘要翻译：使用由控制信号控制的光子耦合的固态开关电路包括控制部分，该控制部分包括形成在二电隔离基板上的至少一个发光二极管和负载电流承载部分。负载电流承载部分具有光激活的可控硅整流器，其开关操作由从发光二极管发射的光子控制。晶体管和电阻器彼此平行地连接在光激活的可控硅整流器的栅极端子和阴极端子之间。在晶体管的基极和发射极之间连接有光电二极管，并且连接到n基极的电极和光激活的可控硅整流器的栅电极之间连接二极管。并且光电二极管也被从发光二极管发射的光子激活。

43. 发明授权

US4122479A Optoelectronic device having control circuit for light emitting element and circuit for light receiving element integrated in a semiconductor body 失效
标题翻译：具有用于发光元件的控制电路和集成在半导体本体中的用于光接收元件的电路的光电子器件
公开(公告)号：US4122479A
公开(公告)日：1978-10-24
申请号：US737267
申请日：1976-11-01
申请人： Yoshitaka Sugawara , Tatsuya Kamei
发明人： Yoshitaka Sugawara , Tatsuya Kamei
IPC分类号： H01L31/167 , H01L31/12
CPC分类号： H01L31/167 , H01L2224/16145 , H01L2224/16225 , H01L2224/48091 , H01L2224/48137 , H01L2224/73265
摘要： An optoelectronic device comprises a light emitting element having a source from which a light signal is emitted, a semiconductor body having a light receiving element, a control circuit for the emitting element, and a circuit for the receiving element which are integrated in the semiconductor body. The light emitting element is electrically connected to the control circuit and optically coupled to the receiving element through a transparent medium for the light signal. The optoelectronic device has an increased integration density and photocoupling efficiency.
摘要翻译：光电子器件包括发光元件，发光元件的源极，具有光接收元件的半导体本体，用于发光元件的控制电路和集成在半导体本体中的接收元件电路。发光元件电连接到控制电路，并通过用于光信号的透明介质光耦合到接收元件。光电子器件具有增加的集成密度和光耦合效率。

44. 发明授权

US08896084B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08896084B2
公开(公告)日：2014-11-25
申请号：US13578434
申请日：2011-02-23
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H01L29/47 , H01L29/06 , H01L29/872 , H01L29/861 , H01L29/20 , H01L29/16
CPC分类号： H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/8611 , H01L29/872
摘要： A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed on a surface of and forming a first junction with the first semiconductor region; a second layer selectively disposed on the first semiconductor region and forming a second junction with the first semiconductor region; a first diode formed by a region including the first junction; a second diode formed by a region including the second junction; and a fourth semiconductor region of a second conductivity type and disposed in the first semiconductor region, between and contacting the first and second junctions. A recess and elevated portion are disposed on the first semiconductor region. The first and the second junctions are formed at different depths. The second diode has a lower built-in potential than the first diode.
摘要翻译：半导体器件包括第一导电类型的第一半导体区域，并且由具有比硅的带隙宽的带隙的材料形成; 选择性地设置在与所述第一半导体区域形成第一结的表面上的第一层; 选择性地设置在所述第一半导体区域上并与所述第一半导体区域形成第二结的第二层; 由包括第一结的区域形成的第一二极管; 由包括所述第二结的区域形成的第二二极管; 以及第二导电类型的第四半导体区域，并且设置在第一半导体区域中，并且与第一和第二结点接触。凹部和升高部分设置在第一半导体区域上。第一和第二接头形成在不同的深度。第二个二极管的内置电位低于第一个二极管。

45. 发明申请

US20100258816A1 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US20100258816A1
公开(公告)日：2010-10-14
申请号：US12801679
申请日：2010-06-21
申请人： Joji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Joji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/24
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

46. 发明申请

US20100182813A1 PN DIODE, ELECTRIC CIRCUIT DEVICE AND POWER CONVERSION DEVICE 审中-公开
标题翻译： PN二极管，电路设备和电源转换器件
公开(公告)号：US20100182813A1
公开(公告)日：2010-07-22
申请号：US12665482
申请日：2008-06-17
申请人： Katsunori Asano , Yoshitaka Sugawara , Atsushi Tanaka
发明人： Katsunori Asano , Yoshitaka Sugawara , Atsushi Tanaka
IPC分类号： H02M7/06 , H01L29/20 , H01L29/24 , H01L29/16 , H01L21/26 , H02M7/12
CPC分类号： H01L27/0814 , H01L21/8213 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/32 , H01L29/861 , H02M1/34 , H02M7/003 , Y02B70/1483
摘要： In a SiC pn diode, the lifetime is controlled by electron beam irradiation of about 3×1013 cm−2 or more. As a result of the life time control, as shown by a current-voltage characteristic (K10) in FIG. 1, the current started to flow at about 32 V and the on-voltage at an applied current of 100 A was 50 V in the SiC pn diode. In this case, the SiC pn diode has a resistance of 0.5Ω when the SiC pn diode is turned on. The conducting region of the SiC pn diode is 0.4 cm2, and is reduced to 0.2 Ωcm2 by increasing the on-resistance by the lifetime control. Therefore, for instance, in an electric circuit device using a diode and a resistor connected in series in prior arts, the resistor can be eliminated.
摘要翻译：在SiC pn二极管中，寿命由大约3×1013 cm -2以上的电子束照射控制。作为寿命控制的结果，如图1中的电流 - 电压特性（K10）所示。如图1所示，电流在大约32V开始流动，并且在SiC pn二极管中在100A的施加电流下的导通电压为50V。在这种情况下，SiC pn二极管的电阻为0.5＆OHgr; 当SiC pn二极管导通时。 SiC pn二极管的导电区域为0.4平方厘米，通过寿命控制增加导通电阻，将其减小到0.2和OHgr。因此，例如，在现有技术中使用二极管和电阻串联连接的电路装置中，可以消除电阻。

47. 发明申请

US20090225573A1 STABLE POWER SUPPLYING APPARATUS 审中-公开
标题翻译：稳定的电源设备
公开(公告)号：US20090225573A1
公开(公告)日：2009-09-10
申请号：US12420567
申请日：2009-04-08
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H02H7/122
CPC分类号： H01M10/42 , H01M10/425 , H02J9/062 , Y10T307/615
摘要： A stable power supply apparatus in accordance with the present invention comprises a secondary battery, a bidirectional chopper circuit and a bidirectional converter, wherein the secondary battery, the chopper circuit and the converter are connected in this order in the direction from the secondary battery side to a system bus line side. The converter is formed of a wide-gap semiconductor device, more particularly, a wide-gap bipolar semiconductor device, and the instantaneous large-power operation capability of the wide-gap bipolar semiconductor device and the instantaneous large-power supplying capability of the secondary battery are utilized. For a short time during which the influence of an instantaneous drop is prevented, the converter is operated as a converter having capability exceeding the instantaneous large-power supplying capability of the secondary battery and having power capacity several times or more the rating of the converter.
摘要翻译：根据本发明的稳定的电源装置包括二次电池，双向斩波电路和双向转换器，其中二次电池，斩波电路和转换器按照从二次电池侧到系统总线一侧。转换器由宽间隙半导体器件，特别是宽间隙双极性半导体器件形成，并且宽间隙双极性半导体器件的瞬时大功率操作能力和次级的双极性半导体器件的瞬时大功率供应能力使用电池。在短时间内，防止瞬时下降的影响，转换器作为具有超过二次电池的瞬时大功率供应能力并具有转换器额定功率的几倍或更多倍的能力的转换器运行。

48. 发明申请

US20090195296A1 Method for Recovering an On-State Forward Voltage and, Shrinking Stacking Faults in Bipolar Semiconductor Devices, and the Bipolar Semiconductor Devices 失效
标题翻译：用于恢复双极半导体器件中的导通状态正向电压和收缩堆叠故障的方法以及双极半导体器件
公开(公告)号：US20090195296A1
公开(公告)日：2009-08-06
申请号：US12376199
申请日：2006-08-04
申请人： Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Yoshitaka Sugawara , Koji Nakayama , Ryosuke Ishii
发明人： Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Yoshitaka Sugawara , Koji Nakayama , Ryosuke Ishii
IPC分类号： G11C5/14 , H01L23/00 , H01L29/70 , H01L21/322
CPC分类号： H01L29/045 , H01L23/345 , H01L29/0619 , H01L29/1608 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： In a bipolar semiconductor device such that electrons and holes are recombined in a silicon carbide epitaxial film grown from the surface of a silicon carbide single crystal substrate at the time of on-state forward bias operation; an on-state forward voltage increased in a silicon carbide bipolar semiconductor device is recovered by shrinking the stacking fault area enlarged by on-state forward bias operation. In a method of this invention, the bipolar semiconductor device in which the stacking fault area enlarged and the on-state forward voltage has been increased by on-state forward bias operation, is heated at a temperature of higher than 350° C.
摘要翻译：在双极型半导体器件中，在通态正向偏压工作时，从碳化硅单晶衬底的表面生长的碳化硅外延膜中电子和空穴复合; 在碳化硅双极半导体器件中增加的导通状态正向电压通过收缩通过接通状态正向偏置操作而扩大的堆垛层错的区域来恢复。在本发明的方法中，通过接通状态的正向偏压操作来增加堆垛层错扩大区域和导通状态正向电压的双极性半导体器件在高于350℃的温度下被加热。

49. 发明授权

US07554220B2 Stable power supplying apparatus 失效
标题翻译：稳定供电装置
公开(公告)号：US07554220B2
公开(公告)日：2009-06-30
申请号：US10894328
申请日：2004-07-19
申请人： Yoshitaka Sugawara
发明人： Yoshitaka Sugawara
IPC分类号： H02J9/00
CPC分类号： H01M10/42 , H01M10/425 , H02J9/062 , Y10T307/615
摘要： A stable power supply apparatus in accordance with the present invention comprises a secondary battery, a bidirectional chopper circuit and a bidirectional converter, wherein the secondary battery, the chopper circuit and the converter are connected in this order in the direction from the secondary battery side to a system bus line side. The converter is formed of a wide-gap semiconductor device, more particularly, a wide-gap bipolar semiconductor device, and the instantaneous large-power operation capability of the wide-gap bipolar semiconductor device and the instantaneous large-power supplying capability of the secondary battery are utilized. For a short time during which the influence of an instantaneous drop is prevented, the converter is operated as a converter having capability exceeding the instantaneous large-power supplying capability of the secondary battery and having power capacity several times or more the rating of the converter.
摘要翻译：根据本发明的稳定的电源装置包括二次电池，双向斩波电路和双向转换器，其中二次电池，斩波电路和转换器按照从二次电池侧到系统总线一侧。转换器由宽间隙半导体器件，特别是宽间隙双极性半导体器件形成，并且宽间隙双极性半导体器件的瞬时大功率操作能力和次级的双极性半导体器件的瞬时大功率供应能力使用电池。在短时间内，防止瞬时下降的影响，转换器作为具有超过二次电池的瞬时大功率供应能力并具有转换器额定功率的几倍或更多倍的能力的转换器运行。

50. 发明申请

US20090045413A1 Silicon Carbide Bipolar Semiconductor Device 失效
标题翻译：碳化硅双极半导体器件
公开(公告)号：US20090045413A1
公开(公告)日：2009-02-19
申请号：US12097019
申请日：2006-12-13
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
IPC分类号： H01L29/24
CPC分类号： H01L29/1604 , H01L21/0465 , H01L21/047 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
摘要翻译：在具有由SiC单晶衬底的表面生长的SiC外延层的具有第一导电类型的SiC漂移层和第二导电类型的SiC载流子注入层的台阶结构的SiC双极型半导体器件中，形成防止堆垛层错及其面积的膨胀，从而防止正向电压的增加。此外，提高了反向偏置中的耐受电压的特性。在台面壁或台面壁和台面周边上形成正向操作降解防止层，以在空间上分离台面壁的表面与pn结界面。在一个实施例中，正向操作降解防止层由在施加反向电压期间具有等电位的第二导电类型的碳化硅低电阻层构成。在另一个实施方案中，正向操作降解防止层由第二导电类型的碳化硅导电层构成，并且在施加反向电压期间具有等电位的金属层形成在碳化硅导电层的表面上。在另一个实施方案中，正向操作降解防止层由高电阻非晶层组成。

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