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41. 发明申请

US20050206032A1 Preparation method of polymer solution 审中-公开
标题翻译：聚合物溶液的制备方法
公开(公告)号：US20050206032A1
公开(公告)日：2005-09-22
申请号：US11084096
申请日：2005-03-21
申请人： Seiichi Ono , Yuji Suzuki
发明人： Seiichi Ono , Yuji Suzuki
IPC分类号： B29C39/14 , C08J3/09 , C08J5/18 , C08L1/12
CPC分类号： C08J3/09 , C08J5/18 , C08J2301/12 , C08L1/12
摘要： A TAC, a solvent, and additives are supplied into a mixing tank to obtain a mixture liquid, which is fed to a heating device by a pump for heating to 90° C. Then the mixture liquid is fed through a first static mixer to obtain a lower concentration dope. Since being prepared by feeding through the first static mixer, the lower concentration dope is excellent in uniformity. Then the lower concentration dope is heated under a high pressure, and then discharged in to a flash tank. Thus the lower concentration dope is enriched to a higher concentration dope, which is fed out from the flash tank. After the control of the temperature, the higher concentration dope is fed through a second static mixer to be uniform.
摘要翻译：将TAC，溶剂和添加剂供给到混合槽中，得到混合液，将其通过加热至90℃的泵送入加热装置。然后将混合液通过第一静态混合器进料，得到浓度较低的浓度。由于通过通过第一静态混合器进料而制备，所以较低浓度的涂料具有优异的均匀性。然后将较低浓度的涂料在高压下加热，然后排放到闪蒸罐中。因此，较低浓度的掺杂物被富集成较高浓度的掺杂物，其从闪蒸罐送出。在温度控制之后，较高浓度的掺杂剂通过第二静态混合器进料至均匀。

42. 发明授权

US06752072B2 Rice polisher, pre-polished rice producing apparatus, leveling device and pre-polished rice producing facility 失效
标题翻译：水稻抛光机，预抛光米饭生产设备，整平装置和预抛光米饭生产设备
公开(公告)号：US06752072B2
公开(公告)日：2004-06-22
申请号：US10349245
申请日：2003-01-22
申请人： Soichi Yamamoto , Masashi Shibata , Yoichi Adachi , Haruo Mori , Yuji Suzuki
发明人： Soichi Yamamoto , Masashi Shibata , Yoichi Adachi , Haruo Mori , Yuji Suzuki
IPC分类号： A23L100
CPC分类号： B02B3/00 , B02B1/04 , B02B3/04 , B02B5/02 , B02B7/02
摘要： A rice polisher for polishing rice, which is a preprocess necessary for producing pre-white rice having a favorable taste by using a small amount of water, a pre-polished rice producing apparatus that uses the rice polisher, a leveling device capable of uniformly leveling grains, and a pre-polished rice producing facility. The rice polisher includes a grain-lifting spiral for transporting white rice above from below, a water-pouring port for pouring polishing water, the water-pouring port being disposed at a head portion, a discharge port for discharging the white rice, the discharge port being disposed at the head portion, and a rice-polishing roll for polishing rice by agitating together with the polishing water poured from the water-pouring port the white rice pressurized by transportation by the grain-lifting spiral, with the polisher discharging from the discharge port the white rice that has been polished.
摘要翻译：一种用于抛光米饭的抛光机，其是通过使用少量的水生产具有良好味道的白色米饭所需的预处理，使用米粒抛光机的预精制米饭生产设备，能够均匀调平的调平装置谷物和预先抛光的米饭生产设施。米粒抛光机包括用于从下方输送白米的起重螺旋，用于倾倒抛光水的注水口，设置在头部的注水口，用于排出白米的排出口，排出口和用于通过与从注水口浇注的抛光水一起搅拌与通过谷物提升螺旋运输而加压的白米的抛光剂一起抛光米粒抛光辊，抛光剂从排放口已经抛光的白米饭。

43. 发明授权

US06461623B2 Cosmetic composition 有权
标题翻译：化妆品组成
公开(公告)号：US06461623B2
公开(公告)日：2002-10-08
申请号：US09289634
申请日：1999-04-12
申请人： Kenzo Koike , Masaki Shimizu , Junichi Fukasawa , Hiroshi Ota , Tsutomu Fujimura , Kazue Tsukahara , Yuji Suzuki
发明人： Kenzo Koike , Masaki Shimizu , Junichi Fukasawa , Hiroshi Ota , Tsutomu Fujimura , Kazue Tsukahara , Yuji Suzuki
IPC分类号： A61K700
CPC分类号： A61K8/345 , A61K8/26 , A61K8/8152 , A61K8/86 , A61K8/97 , A61K8/9706 , A61K2800/51 , A61Q19/00
摘要： A non-aqueous cosmetic composition contains (A) activated zeolite, (B) a polyhydric alcohol having a molecular weight not higher than 1,000, and (C) a high molecular compound soluble in the ingredient (B). When shaken upon use, the cosmetic composition permits ready and even dispersion of the zeolite, exhibits good spreadability and compatibility on the skin and can be readily applied over a wide area. Moreover, the cosmetic composition also has excellent massaging effect.
摘要翻译：非水性化妆品组合物含有（A）活化沸石，（B）分子量不高于1000的多元醇，（C）可溶于成分（B）的高分子化合物。当使用时摇动，化妆品组合物允许沸石的准备和均匀分散，在皮肤上表现出良好的铺展性和相容性，并且可以容易地在广泛的区域上施用。此外，化妆品组合物也具有优异的按摩效果。

44. 发明授权

US06373101B1 Solid-state relay 失效
标题翻译：固态继电器
公开(公告)号：US06373101B1
公开(公告)日：2002-04-16
申请号：US09709528
申请日：2000-11-13
申请人： Masahiko Suzumura , Hitomichi Takano , Yuji Suzuki , Takashi Kishida , Yoshiki Hayasaki , Yoshifumi Shirai , Takeshi Yoshida , Yasunori Miyamoto
发明人： Masahiko Suzumura , Hitomichi Takano , Yuji Suzuki , Takashi Kishida , Yoshiki Hayasaki , Yoshifumi Shirai , Takeshi Yoshida , Yasunori Miyamoto
IPC分类号： H01L2976
CPC分类号： H01L29/7824 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/48 , H01L24/49 , H01L27/088 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48237 , H01L2224/48257 , H01L2224/49 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/12036 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2224/45099
摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.
摘要翻译：由串联连接的LDMOSFET组成的固态继电器具有最小的输出电容。每个LDMOSFET被配置为具有第一导电类型的硅层，第一导电类型的漏极区域扩散在硅层的顶表面中，第二导电类型的阱区域在硅层中以横向间隔开地扩散与漏区域的关系以及在阱区域内扩散的第一导电类型的源极区域，以限定沿着硅层的顶表面在源极区域和阱区域的相对边缘之间延伸的沟道。每个LDMOSFET是由放置在支撑板上的硅衬底，硅衬底上的掩埋氧化物层和掩埋氧化物层上的硅层组成的SOI（绝缘体上硅）结构。阱区域在硅层的整个深度上扩散以使其底部与掩埋氧化物层接触，使得阱区域仅在邻近通道的小区域处与硅层形成P-N界面。由于这种减小的PN接口，并且由于掩埋氧化物层具有比硅层更低的电感性电容，因此可以大大减小漏 - 源电容，以使在非导电条件下继电器的输出电容最小化。

45. 发明授权

US06211551B1 Solid-state relay 失效
标题翻译：固态继电器
公开(公告)号：US06211551B1
公开(公告)日：2001-04-03
申请号：US09105464
申请日：1998-06-26
申请人： Masahiko Suzumura , Hitomichi Takano , Yuji Suzuki , Takashi Kishida , Yoshiki Hayasaki , Yoshifumi Shirai , Takeshi Yoshida , Yasunori Miyamoto
发明人： Masahiko Suzumura , Hitomichi Takano , Yuji Suzuki , Takashi Kishida , Yoshiki Hayasaki , Yoshifumi Shirai , Takeshi Yoshida , Yasunori Miyamoto
IPC分类号： H01L2976
CPC分类号： H01L29/7824 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/48 , H01L24/49 , H01L27/088 , H01L27/1203 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L2224/05553 , H01L2224/05554 , H01L2224/05624 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48237 , H01L2224/48257 , H01L2224/49 , H01L2224/73265 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/12036 , H01L2924/12041 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2924/00 , H01L2224/45099
摘要： A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.
摘要翻译：由串联连接的LDMOSFET组成的固态继电器具有最小的输出电容。每个LDMOSFET被配置为具有第一导电类型的硅层，第一导电类型的漏极区域扩散在硅层的顶表面中，第二导电类型的阱区域在硅层中以横向间隔开地扩散与漏区域的关系以及在阱区域内扩散的第一导电类型的源极区域，以限定沿着硅层的顶表面在源极区域和阱区域的相对边缘之间延伸的沟道。每个LDMOSFET是由放置在支撑板上的硅衬底，硅衬底上的掩埋氧化物层和掩埋氧化物层上的硅层组成的SOI（绝缘体上硅）结构。阱区域在硅层的整个深度上扩散以使其底部与掩埋氧化物层接触，使得阱区域仅在邻近通道的小区域处与硅层形成P-N界面。由于这种减小的PN接口，并且由于掩埋氧化物层具有比硅层更低的电感性电容，因此可以大大减小漏 - 源电容，以使在非导电条件下继电器的输出电容最小化。

46. 发明授权

US6084749A Disk drive apparatus 失效
标题翻译：磁盘驱动装置
公开(公告)号：US6084749A
公开(公告)日：2000-07-04
申请号：US103677
申请日：1993-08-10
申请人： Yuji Suzuki , Kazumi Munekata
发明人： Yuji Suzuki , Kazumi Munekata
IPC分类号： G11B21/02 , G11B21/08 , G11B21/21 , G11B33/12 , G11B5/54
CPC分类号： G11B21/083
摘要： A disk drive apparatus comprises a flat stepping motor for moving a head assembly, which is disposed under a disk cartridge in the inserted state thereof.
摘要翻译：磁盘驱动装置包括用于移动头部组件的平面步进电机，该头部组件设置在插入状态下的盘盒下方。

47. 外观设计

USD424462S Security tag 失效
公开(公告)号：USD424462S
公开(公告)日：2000-05-09
申请号：US90151
申请日：1998-06-30
申请人： Yuji Suzuki , Katsumi Kato
设计人： Yuji Suzuki , Katsumi Kato

48. 外观设计

USD409108S Security tag 失效
公开(公告)号：USD409108S
公开(公告)日：1999-05-04
申请号：US90148
申请日：1998-06-30
申请人： Yuji Suzuki , Katsumi Kato
设计人： Yuji Suzuki , Katsumi Kato

49. 发明授权

US5676203A Heat exchanger 失效
标题翻译：热交换器
公开(公告)号：US5676203A
公开(公告)日：1997-10-14
申请号：US491806
申请日：1995-06-19
申请人： Syunji Kajikawa , Munenori Yuasa , Yasuaki Isobe , Hiroshi Ikeda , Yuji Suzuki
发明人： Syunji Kajikawa , Munenori Yuasa , Yasuaki Isobe , Hiroshi Ikeda , Yuji Suzuki
IPC分类号： F28F3/08 , F28D9/00 , F28F19/00 , F28F21/08
CPC分类号： F28F21/084 , F28D9/0012 , F28F19/00 , F28D2021/0049 , Y10S165/916
摘要： A water-cooled oil cooler includes a laminated body formed by alternately piling up formed plates having cooling water passage openings and oil passage openings in the direction of plate thickness, and fin plates having cooling water passage openings and oil passage openings in the direction of plate thickness. A protrusion is projected from a passage wall of the cooling water passage opening of the fin plate into a cooling water passage. By setting the protrusion baser than the other part of the fin plate, the protrusion is made to serve as a sacrificial corrosion section to prevent the contact section from being precedently corroded.
摘要翻译：水冷油冷却器包括：层叠体，其通过在板厚方向上交替地堆积具有冷却水通道开口和油通道开口的成形板，以及在板的方向上具有冷却水通道开口和油通道开口的翅片板厚度。突起从翅片板的冷却水通道开口的通道壁突出到冷却水通道中。通过将突起底座设置成比翅片的另一部分，突起被用作牺牲腐蚀部分，以防止接触部分被先前腐蚀。

50. 发明授权

US5589251A Resonant tag and method of manufacturing the same 失效
公开(公告)号：US5589251A
公开(公告)日：1996-12-31
申请号：US517690
申请日：1995-08-22
申请人： Hideaki Imaichi , Takeshi Matsumoto , Yuji Suzuki , Koichi Himura , Tadayoshi Haneda
发明人： Hideaki Imaichi , Takeshi Matsumoto , Yuji Suzuki , Koichi Himura , Tadayoshi Haneda
IPC分类号： G01S13/75 , G08B13/24 , H03H3/00 , H03H5/00 , H05K1/00 , H05K1/16 , H05K3/00 , B32B3/00
CPC分类号： G08B13/2414 , G01S13/753 , G08B13/242 , G08B13/2437 , G08B13/244 , G08B13/2442 , H03H3/00 , H03H5/003 , H05K1/162 , B32B2519/02 , H05K1/0393 , H05K1/165 , H05K2201/0191 , H05K2201/09036 , H05K2201/09672 , H05K2203/0108 , H05K3/0014 , Y10S428/901 , Y10T428/24917 , Y10T428/31678 , Y10T428/31692 , Y10T428/31909
摘要： A resonant tag is manufactured in the manner described below: a conductive thin film is formed to a predetermined thickness on two surfaces of an insulating thin film. Thereafter, a conductive pattern, composed of an inductor element and a capacitor element corresponding to a resonant frequency of a resonant circuit, is printed on a surface of one of the conductive thin films, and a conductive pattern, composed of a capacitor element corresponding to the resonant frequency of the resonant circuit, is printed on a surface of the other insulating thin film at a position which faces the capacitor element formed on one of the conductive thin films using an ink which resists etching. A non-printed portion of the conductive thin films is removed by etching to form a resonant circuit pattern. Thereafter, a portion of the insulating thin film, which corresponds to the capacitor element pattern, is thinned to a desired thickness by pressing a heating/pressing member heated to a predetermined temperature against that portion under a predetermined pressure for a predetermined period of time.

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