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41. 发明授权

US5848572A Skip stitch prevention apparatus for sewing machine 失效
标题翻译：缝纫机跳针防止装置
公开(公告)号：US5848572A
公开(公告)日：1998-12-15
申请号：US442126
申请日：1995-05-16
申请人： Hitoshi Ito
发明人： Hitoshi Ito
IPC分类号： D05B63/00 , D05B73/12
CPC分类号： D05B63/00 , D05B73/12
摘要： A mechanism for a sewing machine for use in forming stitches by use of a looper thread which is controlled by a looper. This mechanism is adapted so that the looper thread which is run from a thread-thru hole to a stitch forming station is prevented from skipping over a needle penetrating point when a looper is moved upon descending of a needle, whereby stitches are formed without any skip stitch.
摘要翻译：一种用于通过由弯针器控制的弯针线形成针迹的缝纫机的机构。该机构适于使得当打针器在针下降时移动时，防止从穿通孔到线圈形成站的弯针线跳过针穿刺点，从而形成缝合而不跳过缝。

42. 发明授权

US5641581A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5641581A
公开(公告)日：1997-06-24
申请号：US411994
申请日：1995-03-28
申请人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
发明人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
IPC分类号： C23C16/40 , H01L21/31 , H01L21/311 , H01L21/316 , H01L21/768 , H01L23/532 , B32B9/00
CPC分类号： H01L21/02274 , H01L21/02131 , H01L21/0214 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31111 , H01L21/31625 , H01L21/31629 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.E(B)
摘要翻译：公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 4，P <= 10-1×10-E / 45（A），离子能E（eV）与等离子体密度D（/ cm 3）之间的关系满足以下公式B：D> / = 2x1011×10-E / 45,10（E）（B）

43. 发明授权

US5429995A Method of manufacturing silicon oxide film containing fluorine 失效
标题翻译：制造含氟的氧化硅膜的方法
公开(公告)号：US5429995A
公开(公告)日：1995-07-04
申请号：US94423
申请日：1993-07-16
申请人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
发明人： Yukio Nishiyama , Rempei Nakata , Nobuo Hayasaka , Haruo Okano , Riichirou Aoki , Takahito Nagamatsu , Akemi Satoh , Masao Toyosaki , Hitoshi Ito
IPC分类号： C23C16/40 , H01L21/31 , H01L21/311 , H01L21/316 , H01L21/768 , H01L23/532 , H01L21/02
CPC分类号： H01L21/02274 , H01L21/02131 , H01L21/0214 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31111 , H01L21/31625 , H01L21/31629 , H01L21/76801 , H01L21/76829 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002
摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)
摘要翻译：公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）

44. 发明授权

US5225502A Method of producing polyolefin 失效
标题翻译：生产聚烯烃的方法
公开(公告)号：US5225502A
公开(公告)日：1993-07-06
申请号：US630861
申请日：1990-12-20
申请人： Morihiko Sato , Hitoshi Ito , Mitsuhiro Mori , Yozo Kondo
发明人： Morihiko Sato , Hitoshi Ito , Mitsuhiro Mori , Yozo Kondo
IPC分类号： C08F4/60 , C08F4/658 , C08F10/00
CPC分类号： C08F10/00 , Y10S526/903 , Y10S526/904
摘要： A method of producing a polyolefin, which comprises polymerizing at least one olefin in the presence of a catalyst system comprising(A) a catalyst component prepared by bringing ethylene and/or an .alpha.-olefin in contact with a solid composite obtained by reacting a reaction product, which has been produced by reacting a uniform solution containing(i) at least one member selected from the group consisting of metal magnesium and hydroxylated organic compound, and oxygen-containing organic compounds of magnesium and(ii) at least one oxygen-containing organic compound of titanium with(iii) at least one organoaluminum compound and/or(iv) at least one silicon compound, with(v) at least one aluminum halide compound, thereby allowing the ethylene and/or the .alpha.-olefin to be absorbed into the solid composite, and(B) at least one catalyst component selected from the group consisting of organometallic compounds of metals of Groups Ia, IIa, IIb, IIIb and IVb of the Periodic Table.
摘要翻译：一种制备聚烯烃的方法，其包括在催化剂体系存在下使至少一种烯烃聚合，所述催化剂体系包含（A）通过使乙烯和/或α-烯烃与通过使反应产物，其通过使含有（i）至少一种选自金属镁和羟基化有机化合物的组分和镁的有机有机化合物的均匀溶液反应而制备，和（ii）至少一种含氧的钛的有机化合物与（iii）至少一种有机铝化合物和/或（iv）至少一种硅化合物，和（v）至少一种卤化铝化合物，从而使乙烯和/或α-烯烃被吸收和（B）选自元素周期表第Ia，IIa，IIb，IIIb和IVb族金属的有机金属化合物的至少一种催化剂组分。

45. 发明授权

US4812897A Semiconductor element sealing structure 失效
标题翻译：半导体元件密封结构
公开(公告)号：US4812897A
公开(公告)日：1989-03-14
申请号：US93159
申请日：1987-09-01
申请人： Ryoichi Narita , Toshio Sonobe , Hitoshi Ito , Junji Ishikawa , Osamu Takenaka , Junji Sugiura
发明人： Ryoichi Narita , Toshio Sonobe , Hitoshi Ito , Junji Ishikawa , Osamu Takenaka , Junji Sugiura
IPC分类号： H01L23/29 , C08L83/07 , H01L21/56 , H01L21/60 , H01L23/24 , H01L23/31 , H01L23/28 , B32B9/04 , B32B27/38 , C08F8/00 , C08F283/00 , C08G8/28 , H01L23/02
CPC分类号： H01L24/81 , H01L23/24 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01033 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/16195 , H01L2924/181 , H01L2924/351 , Y10T428/31511 , Y10T428/31663
摘要： A semiconductor element mounted on a substrate is sealed with a silicone gel which has a complex modulus of elasticity such that breakage of solder bumps due to thermal fatique occurs preferentially by shear stress thereto due to a difference between thermal expansion coefficients of the semiconductor element and the substrate, not by tension thereto due to thermal expansion of the silicone gel between the semiconductor element and the substrate.
摘要翻译：安装在基板上的半导体元件用具有复数弹性模量的硅凝胶密封，使得由于热负荷导致的焊料凸块的破裂优先地由于半导体元件的热膨胀系数与基板，而不是由于硅氧烷凝胶在半导体元件和基板之间的热膨胀而受到张力。

46. 发明授权

US4097287A Inorganic film forming composition for coating 失效
标题翻译：无机成膜组合物
公开(公告)号：US4097287A
公开(公告)日：1978-06-27
申请号：US719728
申请日：1976-09-02
申请人： Hitoshi Ito , Hideo Kogure
发明人： Hitoshi Ito , Hideo Kogure
IPC分类号： C09D1/00 , C09D5/10 , C09D5/08
CPC分类号： C09D1/00 , C09D5/103
摘要： An inorganic film forming composition used for forming noncombustible coating films which have good adhesiveness and various other excellent properties. The composition comprises: colloidal silica dispersion, water-soluble organic amines, powdery aluminium compounds and powdery glasses and further may comprise water-soluble amino acids, thiourea, urea and water soluble salts of transition metals such as Cr, Mo, W, Fe, Co, Mn, V, etc. for forming a vehicle.
摘要翻译：用于形成具有良好粘附性和各种其它优异性能的不燃涂膜的无机成膜组合物。该组合物包括：胶体二氧化硅分散体，水溶性有机胺，粉末铝化合物和粉末状玻璃，并且还可包含过渡金属例如Cr，Mo，W，Fe等的水溶性氨基酸，硫脲，尿素和水溶性盐， Co，Mn，V等。

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