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41. 发明申请

US20070257297A1 Memory device having nanocrystals and methods of manufacturing the same 有权
标题翻译：具有纳米晶体的记忆装置及其制造方法
公开(公告)号：US20070257297A1
公开(公告)日：2007-11-08
申请号：US11711714
申请日：2007-02-28
申请人： Kwang-soo Seol , Seong-jae Choi , Jae-young Choi , Yo-sep Min , Eun-joo Jang , Dong-kee Yi
发明人： Kwang-soo Seol , Seong-jae Choi , Jae-young Choi , Yo-sep Min , Eun-joo Jang , Dong-kee Yi
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/51 , H01L29/513 , H01L29/7881 , Y10S977/721 , Y10S977/785 , Y10S977/943
摘要： The memory device includes a source region and a drain region in a substrate and spaced apart from each other; a memory cell formed on a surface of the substrate, wherein the memory cell connects the source region and the drain region and includes a plurality of nanocrystals; a control gate formed on the memory cell. The memory cell includes a first tunneling oxide layer formed on the substrate; a second tunneling oxide layer formed on the first tunneling oxide layer; and a control oxide layer formed on the second tunneling oxide layer. The control oxide layer includes the nanocrystals. The second tunneling oxide layer, having an aminosilane group the increases electrostatic attraction, may be hydrophilic, enabling the formation of a monolayer of the nanocrystals.
摘要翻译：该存储装置包括一基板中的一源极区和一漏极区，彼此间隔开; 形成在所述基板的表面上的存储单元，其中所述存储单元连接所述源极区域和所述漏极区域并且包括多个纳米晶体; 形成在存储单元上的控制栅极。存储单元包括形成在基板上的第一隧穿氧化层; 形成在第一隧道氧化物层上的第二隧穿氧化物层; 以及形成在第二隧道氧化物层上的控制氧化物层。控制氧化物层包括纳米晶体。具有增加静电吸引力的氨基硅烷基团的第二隧道氧化物层可以是亲水性的，能够形成纳米晶体的单层。

42. 发明申请

US20070154385A1 Method for manufacturing zinc oxide nanowires and device having the same 有权
标题翻译：氧化锌纳米线的制造方法及其制造方法
公开(公告)号：US20070154385A1
公开(公告)日：2007-07-05
申请号：US11485097
申请日：2006-07-12
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： C01G9/02
CPC分类号： C01G9/02 , B82Y30/00 , C01P2002/72 , C01P2004/03 , C01P2004/04 , C01P2004/16 , C01P2004/64 , Y10S977/762 , Y10S977/81 , Y10S977/811
摘要： A method for manufacturing ZnO nanowires with a small diameter and increased length and a device comprising the same. The manufacturing method includes: forming a ZnO seed layer containing a hydroxyl group on a substrate; and growing ZnO nanowires on the ZnO seed layer containing the hydroxyl group. Preferably, the ZnO seed layer is a thin ZnO seed layer containing more than 50% of the hydroxyl group.
摘要翻译：一种制造具有小直径和增加长度的ZnO纳米线的方法和包括该ZnO纳米线的装置。制造方法包括：在基板上形成含有羟基的ZnO种子层; 并在含有羟基的ZnO籽晶层上生长ZnO纳米线。优选地，ZnO籽晶层是含有超过50％羟基的薄ZnO晶种层。

43. 发明申请

US20120003895A1 Field emission electrode, method of manufacturing the same, and field emission device comprising the same 有权
公开(公告)号：US20120003895A1
公开(公告)日：2012-01-05
申请号：US13137743
申请日：2011-09-09
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： H01J9/12 , B82Y99/00
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

44. 发明授权

US07795159B2 Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same 有权
标题翻译：用于电荷陷阱半导体存储器件的电荷陷阱层及其制造方法
公开(公告)号：US07795159B2
公开(公告)日：2010-09-14
申请号：US11987425
申请日：2007-11-30
申请人： Kwang-soo Seol , Yo-sep Min , Sang-min Shin
发明人： Kwang-soo Seol , Yo-sep Min , Sang-min Shin
IPC分类号： H01L21/31
CPC分类号： H01L29/792 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/4234 , H01L29/7883 , Y10T428/31678
摘要： Provided are a charge trap semiconductor memory device including a charge trap layer on a semiconductor substrate, and a method of manufacturing the charge trap semiconductor memory device. The method includes: (a) coating a first precursor material on a surface of a semiconductor substrate to be deposited and oxidizing the first precursor material to form a first layer formed of an insulating material; (b) coating a second precursor material formed of metallicity on the first layer; (c) supplying the first precursor material on the surface coated with the second precursor material to substitute the second precursor material with the first precursor material; and (d) oxidizing the first and second precursor materials obtained in (c) to form a second layer formed of an insulating material and a metal impurity, and (a) through (d) are performed at least one time to form a charge trap layer having a structure in which the metal impurity is isolated in the insulating material.
摘要翻译：提供了一种在半导体衬底上包括电荷陷阱层的电荷陷阱半导体存储器件，以及制造电荷阱半导体存储器件的方法。该方法包括：（a）在待沉积的半导体衬底的表面上涂覆第一前体材料并氧化第一前体材料以形成由绝缘材料形成的第一层; （b）在第一层上涂覆由金属性形成的第二前体材料; （c）在涂覆有第二前体材料的表面上提供第一前体材料以用第一前体材料代替第二前体材料; 和（d）氧化由（c）中得到的第一和第二前体材料以形成由绝缘材料和金属杂质形成的第二层，并且（a）至（d）至少进行一次以形成电荷阱具有金属杂质在绝缘材料中隔离的结构的层。

45. 发明申请

US20080164801A1 Field emission electrode, method of manufacturing the same, and field emission device comprising the same 有权
标题翻译：场发射电极及其制造方法以及包括该场致发射电极的场发射装置
公开(公告)号：US20080164801A1
公开(公告)日：2008-07-10
申请号：US12003134
申请日：2007-12-20
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： H01J1/62 , H01J9/02
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.
摘要翻译：提供场致发射电极，制造场发射电极的方法和包括场发射电极的场发射装置。场发射电极可以包括基板，形成在基板上的碳纳米管，以及形成在基板表面的至少一部分上的导电层。导电纳米颗粒可以附着在碳纳米管的外壁上。

46. 发明申请

US20060216636A1 Catalytic resist including metal precursor compound and method of patterning catalyst particles using the same 审中-公开
标题翻译：包含金属前体化合物的催化抗蚀剂和使用其的图案化催化剂颗粒的方法
公开(公告)号：US20060216636A1
公开(公告)日：2006-09-28
申请号：US11280412
申请日：2005-11-17
申请人： Yo-sep Min , Eun-ju Bae , Wan-Jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-Jun Park
IPC分类号： G03C1/00
CPC分类号： G03F7/0047
摘要： A catalytic resist and a method of patterning catalyst particles using the same are provided. The catalytic resist includes a resist and a metal precursor compound uniformly dispersed in the resist.
摘要翻译：提供催化抗蚀剂和使用其的图案化催化剂颗粒的方法。催化抗蚀剂包括均匀分散在抗蚀剂中的抗蚀剂和金属前体化合物。

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