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1. 发明授权

US08294348B2 Field emission electrode, method of manufacturing the same, and field emission device comprising the same 有权
标题翻译：场发射电极及其制造方法以及包括该场致发射电极的场发射装置
公开(公告)号：US08294348B2
公开(公告)日：2012-10-23
申请号：US12003134
申请日：2007-12-20
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： H01J1/00 , H01J19/06
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.
摘要翻译：提供场致发射电极，制造场发射电极的方法和包括场发射电极的场发射装置。场发射电极可以包括基板，形成在基板上的碳纳米管，以及形成在基板表面的至少一部分上的导电层。导电纳米颗粒可以附着在碳纳米管的外壁上。

2. 发明申请

US20080191280A1 N-TYPE CARBON NANOTUBE FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译： N型碳纳米管场效应晶体管及其制造方法
公开(公告)号：US20080191280A1
公开(公告)日：2008-08-14
申请号：US12107318
申请日：2008-04-22
申请人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
发明人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/002 , B82Y10/00 , H01L51/0048 , H01L51/0525 , H01L51/0541 , Y10S977/938
摘要： Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT formed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.
摘要翻译：提供了n型碳纳米管场效应晶体管（CNT FET）和制造n型CNT FET的方法。 n型CNT FET可以包括基板; 形成在基板上并彼此分离的电极; 形成在所述基板上并电连接到所述电极的CNT; 形成在CNT上的栅极氧化层; 以及形成在所述栅极氧化物层上的栅极，其中所述栅极氧化物层包含向所述CNT提供电子的电子给体原子，使得所述CNT可以被所述电子给体原子n掺杂。

3. 发明授权

US07381983B2 N-type carbon nanotube field effect transistor and method of fabricating the same 有权
标题翻译： N型碳纳米管场效应晶体管及其制造方法
公开(公告)号：US07381983B2
公开(公告)日：2008-06-03
申请号：US11192107
申请日：2005-07-29
申请人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
发明人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00
CPC分类号： H01L51/002 , B82Y10/00 , H01L51/0048 , H01L51/0525 , H01L51/0541 , Y10S977/938
摘要： Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.
摘要翻译：提供了n型碳纳米管场效应晶体管（CNT FET）和制造n型CNT FET的方法。 n型CNT FET可以包括基板; 形成在基板上并彼此分离的电极; CNT被施加在基板上并电连接到电极; 形成在CNT上的栅极氧化层; 以及形成在所述栅极氧化物层上的栅极，其中所述栅极氧化物层包含向所述CNT提供电子的电子给体原子，使得所述CNT可以被所述电子给体原子n掺杂。

4. 发明申请

US20070012961A1 N-type carbon nanotube field effect transistor and method of fabricating the same 有权
标题翻译： N型碳纳米管场效应晶体管及其制造方法
公开(公告)号：US20070012961A1
公开(公告)日：2007-01-18
申请号：US11192107
申请日：2005-07-29
申请人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
发明人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L51/002 , B82Y10/00 , H01L51/0048 , H01L51/0525 , H01L51/0541 , Y10S977/938
摘要： Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.
摘要翻译：提供了n型碳纳米管场效应晶体管（CNT FET）和制造n型CNT FET的方法。 n型CNT FET可以包括基板; 形成在基板上并彼此分离的电极; CNT被施加在基板上并电连接到电极; 形成在CNT上的栅极氧化层; 以及形成在所述栅极氧化物层上的栅极，其中所述栅极氧化物层包含向所述CNT提供电子的电子给体原子，使得所述CNT可以被所述电子给体原子n掺杂。

5. 发明授权

US07132714B2 Vertical carbon nanotube-field effect transistor and method of manufacturing the same 有权
标题翻译：垂直碳纳米管场效应晶体管及其制造方法
公开(公告)号：US07132714B2
公开(公告)日：2006-11-07
申请号：US11009145
申请日：2004-12-13
申请人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
发明人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
IPC分类号： H01L29/76
CPC分类号： H01L51/057 , B82Y10/00 , G11C2213/18 , H01L51/0048
摘要： Provided are a vertical carbon nanotube field effect transistor (CNTFET) and a method of manufacturing the same. The method includes: forming a first electrode on a substrate; forming a stack of multiple layers (“multi-layer stack”) on the first electrode, the multiple layers including first and second buried layers and a sacrificial layer interposed between the first and second buried layers; forming a vertical well into the multi-layer stack; growing a CNT within the well; forming a second electrode connected to the CNT on the multi-layer stack into which the well has been formed; forming a protective layer on the second electrode; removing the sacrificial layer and exposing the CNT between the first and second buried layers; forming a gate insulating layer on the exposed surface of the CNT; and forming a gate enclosing the CNT on the gate insulating layer. The CNTFET and manufacturing method maximize the effect of electric field produced by the gate due to the channel completely enclosed by the gate while improving a ratio Ion/Ioff of on-current to off-current by fully depleting a depletion layer formed in the channel.
摘要翻译：提供了一种垂直碳纳米管场效应晶体管（CNTFET）及其制造方法。该方法包括：在基板上形成第一电极; 在所述第一电极上形成多层叠层（“多层叠层”），所述多层包括第一和第二掩埋层以及介于所述第一和第二掩埋层之间的牺牲层; 在多层堆叠中形成垂直井; 在井内生长CNT; 在形成有所述阱的所述多层堆叠上形成连接到所述CNT的第二电极; 在所述第二电极上形成保护层; 去除牺牲层并将CNT暴露在第一和第二埋层之间; 在CNT的暴露表面上形成栅极绝缘层; 以及在所述栅极绝缘层上形成包围所述CNT的栅极。 CNTFET和制造方法由于由栅极完全封闭的通道产生的电场的影响最大化，同时通过完全耗尽在通道中形成的耗尽层来改善导通电流与截止电流的比值Ion / Ioff。

6. 发明申请

US20050156203A1 Vertical carbon nanotube-field effect transistor and method of manufacturing the same 有权
标题翻译：垂直碳纳米管场效应晶体管及其制造方法
公开(公告)号：US20050156203A1
公开(公告)日：2005-07-21
申请号：US11009145
申请日：2004-12-13
申请人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
发明人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
IPC分类号： H01L29/772 , H01L51/30 , H03K3/037 , H03K3/12 , H03K3/286
CPC分类号： H01L51/057 , B82Y10/00 , G11C2213/18 , H01L51/0048
摘要： Provided are a vertical carbon nanotube field effect transistor (CNTFET) and a method of manufacturing the same. The method includes: forming a first electrode on a substrate; forming a stack of multiple layers (“multi-layer stack”) on the first electrode, the multiple layers including first and second buried layers and a sacrificial layer interposed between the first and second buried layers; forming a vertical well into the multi-layer stack; growing a CNT within the well; forming a second electrode connected to the CNT on the multi-layer stack into which the well has been formed; forming a protective layer on the second electrode; removing the sacrificial layer and exposing the CNT between the first and second buried layers; forming a gate insulating layer on the exposed surface of the CNT; and forming a gate enclosing the CNT on the gate insulating layer. The CNTFET and manufacturing method maximize the effect of electric field produced by the gate due to the channel completely enclosed by the gate while improving a ratio Ion/Ioff of on-current to off-current by fully depleting a depletion layer formed in the channel.
摘要翻译：提供了一种垂直碳纳米管场效应晶体管（CNTFET）及其制造方法。该方法包括：在基板上形成第一电极; 在所述第一电极上形成多层叠层（“多层叠层”），所述多层包括第一和第二掩埋层以及介于所述第一和第二掩埋层之间的牺牲层; 在多层堆叠中形成垂直井; 在井内生长CNT; 在形成有所述阱的所述多层堆叠上形成连接到所述CNT的第二电极; 在所述第二电极上形成保护层; 去除牺牲层并将CNT暴露在第一和第二埋层之间; 在CNT的暴露表面上形成栅极绝缘层; 以及在所述栅极绝缘层上形成包围所述CNT的栅极。 CNTFET和制造方法由于由栅极完全封闭的通道产生的电场的影响最大化，同时通过完全耗尽在通道中形成的耗尽层来改善导通电流与截止电流的比值Ion / Ioff。

7. 发明授权

US08272914B2 Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls 有权
标题翻译：制造具有附着到外壁的导电颗粒的碳纳米管的场致发射电极的方法
公开(公告)号：US08272914B2
公开(公告)日：2012-09-25
申请号：US13137743
申请日：2011-09-09
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： H01J1/62 , H01J63/02
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.
摘要翻译：提供场致发射电极，制造场发射电极的方法和包括场发射电极的场发射装置。场发射电极可以包括基板，形成在基板上的碳纳米管，以及形成在基板表面的至少一部分上的导电层。导电纳米颗粒可以附着在碳纳米管的外壁上。

8. 发明授权

US07705347B2 N-type carbon nanotube field effect transistor and method of fabricating the same 有权
标题翻译： N型碳纳米管场效应晶体管及其制造方法
公开(公告)号：US07705347B2
公开(公告)日：2010-04-27
申请号：US12107318
申请日：2008-04-22
申请人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
发明人： Eun-ju Bae , Yo-sep Min , Wan-jun Park
IPC分类号： H01L35/24
CPC分类号： H01L51/002 , B82Y10/00 , H01L51/0048 , H01L51/0525 , H01L51/0541 , Y10S977/938
摘要： Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT formed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.
摘要翻译：提供了n型碳纳米管场效应晶体管（CNT FET）和制造n型CNT FET的方法。 n型CNT FET可以包括基板; 形成在基板上并彼此分离的电极; 形成在所述基板上并电连接到所述电极的CNT; 形成在CNT上的栅极氧化层; 以及形成在所述栅极氧化物层上的栅极，其中所述栅极氧化物层包含向所述CNT提供电子的电子给体原子，使得所述CNT可以被所述电子给体原子n掺杂。

9. 发明申请

US20070154623A1 Method for manufacturing single-walled carbon nanotube on glass 审中-公开
标题翻译：在玻璃上制造单壁碳纳米管的方法
公开(公告)号：US20070154623A1
公开(公告)日：2007-07-05
申请号：US11471262
申请日：2006-06-20
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： B05D5/12 , C23C16/00 , H05H1/24
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , C01B2202/02
摘要： A method for manufacturing high-quality single-walled carbon nanotubes on a glass substrate at relatively low temperatures includes: depositing a buffer layer on a glass substrate; depositing a catalytic metal on the buffer layer; placing the glass substrate having the catalytic metal formed thereon in a vacuum chamber and generating H2O plasma inside the vacuum chamber; and supplying a source gas into the vacuum chamber and growing a carbon nanotube on the glass substrate.
摘要翻译：在较低温度下在玻璃基板上制造高品质单壁碳纳米管的方法包括：在玻璃基板上沉积缓冲层; 在缓冲层上沉积催化金属; 将其上形成有催化金属的玻璃基板放置在真空室中，并在真空室内产生H 2 O 2等离子体; 并将源气体供应到真空室中，并在玻璃基板上生长碳纳米管。

10. 发明申请

US20120003895A1 Field emission electrode, method of manufacturing the same, and field emission device comprising the same 有权
公开(公告)号：US20120003895A1
公开(公告)日：2012-01-05
申请号：US13137743
申请日：2011-09-09
申请人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
发明人： Yo-sep Min , Eun-ju Bae , Wan-jun Park
IPC分类号： H01J9/12 , B82Y99/00
CPC分类号： H01J31/127 , H01J9/025 , H01J29/04
摘要： Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

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