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    • 41. 发明申请
    • METHOD FOR MANUFACTURING ELECTROCHEMICAL ELEMENT ELECTRODE
    • 电化学元件电极的制造方法
    • US20100330420A1
    • 2010-12-30
    • US12865076
    • 2008-12-16
    • Yuko OgawaKazuyoshi Honda
    • Yuko OgawaKazuyoshi Honda
    • H01M4/13H01M4/04B05D5/12
    • H01M4/70H01M4/0421H01M4/133H01M4/1391H01M4/1393H01M10/0525
    • Includes the steps of preparing a sheet-like current collector 4 having a plurality of bumps 4A on a surface thereof, the plurality of bumps having a height of 3 μm or greater and 10 μm or less; and forming an active material body having a stacked structure on each of the bumps 4A of the current collector 4. The step of forming the active material body includes a first layer vapor deposition step of causing a vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined with respect to the normal H to the current collector 4 to form a first layer 101a of the active material body on each bump 4A, the first layer 101a being located closest to the current collector; and a second layer vapor deposition step of causing the vaporized vapor deposition material to be incident on the surface of the current collector 4 in a direction inclined, with respect to the normal H to the current collector 4, opposite to the incidence direction of the vapor deposition material in the first layer vapor deposition step to form a second layer 102a on at least a part of the first layer 101a. In the first layer vapor deposition step, vapor deposition is performed while moving the current collector 4 in a direction in which the incidence angle ω of the vapor deposition material with respect to the normal H to the current collector 4 is decreased.
    • 包括在其表面上制备具有多个凸起4A的片状集电体4的步骤,多个凸起的高度为3μm以上且10μm以下; 并且在集电体4的每个凸起4A上形成具有层叠结构的活性物质体。形成活性物质体的步骤包括使蒸发的气相沉积材料入射到表面上的第一层气相沉积步骤 在相对于集电体4相对于法线H倾斜的方向上形成集电体4,以在每个凸块4A上形成活性物质体的第一层101a,第一层101a位于最靠近集电体的位置; 以及第二层气相沉积步骤,使蒸发的气相沉积材料以相对于集电体4的法线H倾斜的方向入射在集电体4的表面上,该方向与蒸气的入射方向相反 沉积材料在第一层气相沉积步骤中以在第一层101a的至少一部分上形成第二层102a。 在第一层气相沉积步骤中,在使集电体4沿蒸镀材料相对于正常H的入射角ω向集电体4减小的方向移动的同时进行蒸镀。