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41. 发明申请

US20120192126A1 SYSTEMS AND METHODS PROVIDING ELECTRON BEAM PROXIMITY EFFECT CORRECTION 有权
标题翻译：提供电子束近似效应校正的系统和方法
公开(公告)号：US20120192126A1
公开(公告)日：2012-07-26
申请号：US13011165
申请日：2011-01-21
申请人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Jeng-Horng Chen , Shy-Jay Lin , Chia-Ping Chiang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , B82Y10/00 , B82Y40/00 , G03F1/144 , G03F1/78 , G03F7/70283 , G03F7/70441 , H01J37/3026 , H01J37/3174 , H01J2237/31769 , H01J2237/31771 , H01L21/0274 , H01L21/0275
摘要： A method for writing a design to a material using an electron beam includes assigning a first dosage to a first polygonal shape. The first polygonal shape occupies a first virtual layer and includes a first set of pixels. The method also includes simulating a first write operation using the first polygonal shape to create the design, discerning an error in the simulated first write operation, and assigning a second dosage to a second polygonal shape to reduce the error. The second polygonal shape occupies a second virtual layer. The method further includes creating a data structure that includes the first and second polygonal shapes and saving the data structure to a non-transitory computer-readable medium.
摘要翻译：使用电子束将设计写入材料的方法包括将第一剂量分配给第一多边形形状。第一多边形形状占据第一虚拟层并且包括第一组像素。该方法还包括使用第一多边形形状来模拟第一写入操作以创建设计，识别模拟的第一写入操作中的错误，以及将第二剂量分配给第二多边形形状以减少误差。第二多边形形状占据第二虚拟层。该方法还包括创建包括第一和第二多边形形状并将数据结构保存到非暂时性计算机可读介质的数据结构。

42. 发明授权

US08178280B2 Self-contained proximity effect correction inspiration for advanced lithography (special) 有权
标题翻译：独立的接近效应校正灵感，用于高级光刻（特殊）
公开(公告)号：US08178280B2
公开(公告)日：2012-05-15
申请号：US12700880
申请日：2010-02-05
申请人： Shih-Ming Chang , Shy-Jay Lin
发明人： Shih-Ming Chang , Shy-Jay Lin
IPC分类号： G03C5/00
CPC分类号： G03F1/78 , H01J37/3174 , H01J2237/31771 , H01J2237/31772 , Y10S430/143
摘要： A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.
摘要翻译：公开了一种光刻方法。示例性的光刻方法包括在基底上提供能量敏感的抗蚀剂材料; 提供期望的图案; 在所述基板上执行光刻工艺，其中所述光刻工艺包括将所述能量敏感抗蚀剂材料暴露于带电粒子束，使得所需图案转移到所述能量敏感抗蚀剂材料; 并且将带电粒子束从断开状态引导到散焦状态，其中散焦状态补偿反向散射能量，从而减少邻近效应。

43. 发明申请

US20110195359A1 SELF-CONTAINED PROXIMITY EFFECT CORRECTION INSPIRATION FOR ADVANCED LITHOGRAPHY (SPECIAL) 有权
标题翻译：自动逼近（特殊）的自包含效应校正激励
公开(公告)号：US20110195359A1
公开(公告)日：2011-08-11
申请号：US12700880
申请日：2010-02-05
申请人： Shih-Ming Chang , Shy-Jay Lin
发明人： Shih-Ming Chang , Shy-Jay Lin
IPC分类号： G03F7/20
CPC分类号： G03F1/78 , H01J37/3174 , H01J2237/31771 , H01J2237/31772 , Y10S430/143
摘要： A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.
摘要翻译：公开了一种光刻方法。示例性的光刻方法包括在基底上提供能量敏感的抗蚀剂材料; 提供期望的图案; 在所述基板上执行光刻工艺，其中所述光刻工艺包括将所述能量敏感抗蚀剂材料暴露于带电粒子束，使得所需图案转移到所述能量敏感抗蚀剂材料上; 并且将带电粒子束从断开状态引导到散焦状态，其中散焦状态补偿反向散射能量，从而减少邻近效应。

44. 发明申请

US20080129969A1 System and Method For Improving Immersion Scanner Overlay Performance 有权
标题翻译：提高浸入式扫描仪覆盖性能的系统和方法
公开(公告)号：US20080129969A1
公开(公告)日：2008-06-05
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供一个水箱至少一个晶片台输入和晶片台输出; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

45. 发明授权

US06599665B1 Method of making a semiconductor wafer imaging mask having uniform pattern features 有权
标题翻译：制造具有均匀图案特征的半导体晶片成像掩模的方法
公开(公告)号：US06599665B1
公开(公告)日：2003-07-29
申请号：US09686099
申请日：2000-10-10
申请人： Shy-Jay Lin , Sheng-Chi Chin
发明人： Shy-Jay Lin , Sheng-Chi Chin
IPC分类号： G03F900
CPC分类号： G03F1/78 , G03F1/36 , G03F1/80 , G03F7/30
摘要： A mask used to image circuit patterns onto a semiconductor wafer exhibits improved uniformity of critical feature dimensions. A pattern of dummy features is formed around the outer periphery of the main pattern during manufacture of the mask. The presence of the dummy field eliminates loading of the etch rate at the marginal areas of the main pattern, thereby assuring that all of the features in the main pattern field are etched at substantially the same rate. By using differing radiation dosages to expose the photoresist employed to form the main pattern and dummy patterns, a thickness of the photoresist remains over the dummy field pattern after development of the photoresist. This remaining photoresist has a thickness sufficient to prevent subsequent etching of the underlying metal which would otherwise leave features in the metal layer that would be imaged onto the wafer.
摘要翻译：用于将电路图案成像到半导体晶片上的掩模表现出改进的关键特征尺寸的均匀性。在制造掩模期间，在主图案的外周围形成虚拟特征图案。虚拟场的存在消除了在主图案的边缘区域处的蚀刻速率的加载，从而确保主图案场中的所有特征以基本相同的速率被蚀刻。通过使用不同的辐射剂量来暴露用于形成主图案和虚设图案的光致抗蚀剂，在光致抗蚀剂显影之后，光致抗蚀剂的厚度保留在伪场图案上。该剩余的光致抗蚀剂具有足以防止随后蚀刻下面的金属的厚度，否则将会残留在将被成像到晶片上的金属层中的特征。

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