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41. 发明授权

US07368416B2 Methods of removing metal-containing materials 失效
标题翻译：去除含金属材料的方法
公开(公告)号：US07368416B2
公开(公告)日：2008-05-06
申请号：US11486525
申请日：2006-07-13
申请人： Kevin R. Shea , Niraj B. Rana
发明人： Kevin R. Shea , Niraj B. Rana
IPC分类号： H01L21/461
CPC分类号： H01L21/32134 , H01L28/90
摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.
摘要翻译：在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法比例结构具有高蚀刻速率。蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

42. 发明授权

US07115527B2 Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor 有权
标题翻译：蚀刻含有氧化铝的基板的方法，以及形成电容器的方法
公开(公告)号：US07115527B2
公开(公告)日：2006-10-03
申请号：US10894782
申请日：2004-07-19
申请人： Kevin R. Shea
发明人： Kevin R. Shea
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/31111 , H01L28/92
摘要： This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate includes flowing water and ozone to aluminum oxide on the substrate, with at least one of the water and the ozone being at a temperature of at least 65° C. at the aluminum oxide effective to etch aluminum oxide from the substrate. In one implementation, aspects of the method are utilized in forming a capacitor.
摘要翻译：本发明的蚀刻包含基底的氧化铝的方法，以及形成电容器的方法。在一个实施方案中，蚀刻包含基底的氧化铝的方法包括将水和臭氧流入基底上的氧化铝，至少一种水和臭氧在氧化铝处于至少65℃的温度有效地从基底上蚀刻氧化铝。在一个实施方案中，该方法的方面用于形成电容器。

43. 发明授权

US09076680B2 Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array 有权
标题翻译：集成电路，形成电容器的方法，以及形成集成电路的方法，该集成电路包括阵列阵列的电容器和电路
公开(公告)号：US09076680B2
公开(公告)日：2015-07-07
申请号：US13276125
申请日：2011-10-18
申请人： Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
发明人： Brett W. Busch , Mingtao Li , Jennifer Lequn Liu , Kevin R. Shea , Belford T. Coursey , Jonathan T. Doebler
IPC分类号： H01L27/10 , H01L27/108 , H01L49/02
CPC分类号： H01L28/40 , H01L23/5252 , H01L27/10852 , H01L27/10894 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： A method of forming capacitors includes providing a support material over a substrate. The support material is at least one of semiconductive or conductive. Openings are formed into the support material. The openings include at least one of semiconductive or conductive sidewalls. An insulator is deposited along the semiconductive and/or conductive opening sidewalls. A pair of capacitor electrodes having capacitor dielectric there-between is formed within the respective openings laterally inward of the deposited insulator. One of the pair of capacitor electrodes within the respective openings is laterally adjacent the deposited insulator. Other aspects are disclosed, including integrated circuitry independent of method of manufacture.
摘要翻译：形成电容器的方法包括在衬底上提供支撑材料。支撑材料是半导体或导电中的至少一种。开口形成支撑材料。开口包括半导体或导电侧壁中的至少一个。沿着半导体和/或导电开口侧壁沉积绝缘体。一对电容器电极之间具有电容器电介质形成在相应的开口内横向向内沉积的绝缘体。各个开口内的一对电容器电极之一横向邻近沉积的绝缘体。公开了其它方面，包括独立于制造方法的集成电路。

44. 发明授权

US08853050B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08853050B2
公开(公告)日：2014-10-07
申请号：US13615147
申请日：2012-09-13
申请人： Mark Kiehlbauch , Kevin R. Shea
发明人： Mark Kiehlbauch , Kevin R. Shea
IPC分类号： H01L21/20 , H01L27/108 , H01L49/02
CPC分类号： H01L28/90 , H01L27/10814 , H01L27/10852
摘要： Some embodiments include methods of making stud-type capacitors utilizing carbon-containing support material. Openings may be formed through the carbon-containing support material to electrical nodes, and subsequently conductive material may be grown within the openings. The carbon-containing support material may then be removed, and the conductive material utilized as stud-type storage nodes of stud-type capacitors. The stud-type capacitors may be incorporated into DRAM, and the DRAM may be utilized in electronic systems.
摘要翻译：一些实施例包括使用含碳支撑材料制造螺柱型电容器的方法。开口可以通过含碳支撑材料形成到电节点，并且随后可以在开口内生长导电材料。然后可以除去含碳支撑材料，并且将导电材料用作螺柱式电容器的螺柱式存储节点。螺柱式电容器可以并入到DRAM中，并且可以在电子系统中使用DRAM。

45. 发明授权

US08623725B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08623725B2
公开(公告)日：2014-01-07
申请号：US13555492
申请日：2012-07-23
申请人： Mark Kiehlbauch , Kevin R. Shea
发明人： Mark Kiehlbauch , Kevin R. Shea
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852 , H01L27/10894
摘要： A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received within the opening below the shield. The shield is etched through within the opening. After the etching, a first capacitor electrode is formed within the opening in electrical connection with the node location. A capacitor dielectric and a second capacitor electrode are formed operatively adjacent the first capacitor electrode.
摘要翻译：形成电容器的方法包括在衬底上的节点位置上提供其中具有开口的材料。在开口内和横过开口设置有屏蔽件，空隙被容纳在屏蔽件上方的开口内，并且在屏蔽件下面的开口内容纳有空隙。屏蔽层在开口内蚀刻。在蚀刻之后，在开口内形成与节点位置电连接的第一电容器电极。与第一电容器电极可操作地形成电容器电介质和第二电容器电极。

46. 发明授权

US08470716B2 Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material 有权
标题翻译：用于形成半导体结构的方法以及相对于导电材料选择性地蚀刻氮化硅的方法
公开(公告)号：US08470716B2
公开(公告)日：2013-06-25
申请号：US13288715
申请日：2011-11-03
申请人： Kevin R. Shea , Thomas M. Graettinger
发明人： Kevin R. Shea , Thomas M. Graettinger
IPC分类号： H01L21/302 , H01L21/311 , H01L21/318
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译：本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。在随后的处理中，容器可以并入电容器中。

47. 发明授权

US08076248B2 Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material 有权
标题翻译：用于形成半导体结构的方法以及相对于导电材料选择性地蚀刻氮化硅的方法
公开(公告)号：US08076248B2
公开(公告)日：2011-12-13
申请号：US12652955
申请日：2010-01-06
申请人： Kevin R. Shea , Thomas M. Graettinger
发明人： Kevin R. Shea , Thomas M. Graettinger
IPC分类号： H01L21/302 , H01L21/318 , H01L21/316
CPC分类号： H01L28/92 , H01L21/30625 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L27/105 , H01L27/1052 , H01L27/108
摘要： The invention includes methods for selectively etching insulative material supports relative to conductive material. The invention can include methods for selectively etching silicon nitride relative to metal nitride. The metal nitride can be in the form of containers over a semiconductor substrate, with such containers having upwardly-extending openings with lateral widths of less than or equal to about 4000 angstroms; and the silicon nitride can be in the form of a layer extending between the containers. The selective etching can comprise exposure of at least some of the silicon nitride and the containers to Cl2 to remove the exposed silicon nitride, while not removing at least the majority of the metal nitride from the containers. In subsequent processing, the containers can be incorporated into capacitors.
摘要翻译：本发明包括相对于导电材料选择性地蚀刻绝缘材料支撑件的方法。本发明可以包括相对于金属氮化物选择性地蚀刻氮化硅的方法。金属氮化物可以是在半导体衬底上的容器的形式，其中这种容器具有向上延伸的开口，横向宽度小于或等于约4000埃; 并且氮化硅可以是在容器之间延伸的层的形式。选择性蚀刻可以包括将至少一些氮化硅和容器暴露于Cl2以去除暴露的氮化硅，同时不从容器中去除至少大部分的金属氮化物。在随后的处理中，容器可以并入电容器中。

48. 发明授权

US07935602B2 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US07935602B2
公开(公告)日：2011-05-03
申请号：US11168861
申请日：2005-06-28
申请人： Hongmei Wang , Fred D. Fishburn , Janos Fucsko , T. Earl Allen , Richard H. Lane , Robert J. Hanson , Kevin R. Shea
发明人： Hongmei Wang , Fred D. Fishburn , Janos Fucsko , T. Earl Allen , Richard H. Lane , Robert J. Hanson , Kevin R. Shea
IPC分类号： H01L21/336 , H01L21/311 , H01L21/302
CPC分类号： H01L21/76232
摘要： The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.
摘要翻译：本发明包括形成隔离区域的方法。可以形成开口以延伸到半导体材料中，并且可以用衬垫保护开口的上周边，而下边缘是无衬里的。然后可以对无衬里部分进行蚀刻以形成开口的加宽区域。随后，开口可以用绝缘材料填充以形成隔离区域。晶体管器件然后可以形成在隔离区域的相对侧上，并且与隔离区域彼此电隔离。本发明还包括包含延伸到半导体材料中的电绝缘隔离结构的半导体结构，其结构具有球形底部区域和从底部区域向上延伸到半导体材料表面的杆区域。

49. 发明授权

US07824505B2 Method to address carbon incorporation in an interpoly oxide 有权
标题翻译：解决二氧化硅中碳掺入的方法
公开(公告)号：US07824505B2
公开(公告)日：2010-11-02
申请号：US11493053
申请日：2006-07-26
申请人： Niraj Rana , Kevin R. Shea
发明人： Niraj Rana , Kevin R. Shea
IPC分类号： B08B3/00 , B08B7/00
CPC分类号： H01L21/02063 , B08B3/08 , C23F1/32 , C23F4/00
摘要： A method of removing a mask and addressing interfacial carbon chemisorbed in a semiconductor wafer starts with placing the semiconductor wafer into a dry strip chamber. The dry stripping process is performed to remove the mask on the semiconductor wafer. The semiconductor wafer is then subjected to a cleaning solution to perform a cleaning process to remove particles on the surface of the semiconductor wafer and to address the interfacial carbon. The cleaning solution being either water containing ozone (O3) and ammonia (NH3), or a solution of hot phosphoric acid (H3PO4).
摘要翻译：在半导体晶片中化学吸附的掩模和去除界面碳的方法首先将半导体晶片放入干燥条形室中。执行干燥剥离处理以去除半导体晶片上的掩模。然后对半导体晶片进行清洁溶液以进行清洁处理以去除半导体晶片的表面上的颗粒并解决界面碳。清洁溶液是含臭氧（O3）和氨（NH3）的水，或热磷酸（H 3 PO 4）的溶液。

50. 发明申请

US20100221916A1 Methods of Etching Oxide, Reducing Roughness, and Forming Capacitor Constructions 失效
标题翻译：蚀刻氧化物的方法，减小粗糙度和形成电容器结构
公开(公告)号：US20100221916A1
公开(公告)日：2010-09-02
申请号：US12778043
申请日：2010-05-11
申请人： Niraj B. Rana , Kevin R. Shea , Janos Fucsko
发明人： Niraj B. Rana , Kevin R. Shea , Janos Fucsko
IPC分类号： H01L21/306 , C23G1/02
CPC分类号： H01L21/31111 , C11D7/265 , C11D11/0047 , H01L21/02063 , H01L21/31116 , H01L27/0629 , H01L28/40 , Y10S438/963
摘要： The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.
摘要翻译：本发明包括在氧化物（例如二氧化硅或掺杂的二氧化硅）的蚀刻期间利用具有至少1×10-6的酸性解离常数的羧酸的一种或多种组分的方法。可以使用两种或更多种羧酸。示例性的羧酸包括三氯乙酸，马来酸和柠檬酸。

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