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41. 发明授权

US06403466B1 Post-CMP-Cu deposition and CMP to eliminate surface voids 有权
标题翻译：后CMP-Cu沉积和CMP以消除表面空隙
公开(公告)号：US06403466B1
公开(公告)日：2002-06-11
申请号：US09805651
申请日：2001-03-13
申请人： Sergey D. Lopatin
发明人： Sergey D. Lopatin
IPC分类号： H01L214763
CPC分类号： H01L21/7684 , H01L21/76877
摘要： A manufacturing method for an integrated circuit is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer is formed on the semiconductor substrate. A channel dielectric layer on the device dielectric layer has an opening formed therein. A barrier layer lines the channel opening. A seed layer is deposited over the barrier layer and a conductor core is deposited over the seed layer, filling the opening of in the channel dielectric layer. The seed and barrier layers are then removed above the dielectric layer. A conductive layer is then deposited, filling any voids or depressions in the conductor core, and is subsequently removed above the dielectric layer resulting in a conductive channel of uniform thickness.
摘要翻译：提供了一种具有半导体器件的半导体衬底的集成电路的制造方法。在半导体衬底上形成器件电介质层。器件电介质层上的沟道电介质层具有形成在其中的开口。屏障层对通道开口进行排列。种子层沉积在阻挡层上，并且导体芯沉积在种子层上，填充沟道介电层的开口。然后在电介质层上方去除种子和阻挡层。然后沉积导电层，填充导体芯中的任何空隙或凹陷，并且随后在电介质层上方移除，导致均匀厚度的导电沟道。

42. 发明授权

US06368961B1 Graded compound seed layers for semiconductors 有权
标题翻译：半导体分级复合种子层
公开(公告)号：US06368961B1
公开(公告)日：2002-04-09
申请号：US09723812
申请日：2000-11-28
申请人： Sergey D. Lopatin , Takeshi Nogami
发明人： Sergey D. Lopatin , Takeshi Nogami
IPC分类号： H01L2124
CPC分类号： H01L21/76871 , H01L21/76843 , H01L21/76873 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for forming semiconductor copper seed layers with the copper alloyed with one of the metals from the group comprising tin, magnesium, and aluminum. The alloy further has a graded nitrogen content with the highest concentration of nitrogen proximate a tungsten nitride barrier layer. The high concentration of nitrogen in the copper alloy provides good adhesion of the seed layer to the barrier layer while the lack of nitrogen away from the barrier layer allows the copper conductive to have good adhesion with the pure copper conductive material.
摘要翻译：提供了一种形成半导体铜种子层的方法，其中铜与由锡，镁和铝组成的组中的一种合金化。该合金还具有氮化氮阻挡层附近氮浓度最高的氮。铜合金中的高浓度氮提供了种子层与阻挡层的良好粘附性，而阻挡层的氮缺乏使得铜导电体与纯铜导电材料具有良好的粘合性。

43. 发明授权

US06348732B1 Amorphized barrier layer for integrated circuit interconnects 有权
标题翻译：用于集成电路互连的非晶化阻挡层
公开(公告)号：US06348732B1
公开(公告)日：2002-02-19
申请号：US09715702
申请日：2000-11-18
申请人： Sergey D. Lopatin , Minh Van Ngo , Minh Quoc Tran
发明人： Sergey D. Lopatin , Minh Van Ngo , Minh Quoc Tran
IPC分类号： H01L2348
CPC分类号： H01L21/76843 , H01L21/76862 , H01L21/76873 , H01L23/53209 , H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A dielectric layer is on the semiconductor substrate and has an opening provided therein. An amorphized barrier layer lines the opening and a seed layer is deposited to line the amorphized barrier layer. A conductor core fills the opening over the barrier layer to form a conductor channel. The seed layer is securely bonded to the amorphized barrier layer and prevents electromigration along the surface between the seed and barrier layers.
摘要翻译：提供了具有半导体器件的半导体衬底的集成电路及其制造方法。电介质层位于半导体衬底上，其中设有开口。非晶化的阻挡层对开口进行排列，并且沉积种子层以使非晶化的阻挡层排列。导体芯填充阻挡层上的开口以形成导体通道。种子层牢固地结合到非晶化阻挡层并防止沿种子和阻挡层之间的表面的电迁移。

44. 发明授权

US06297146B1 Low resistivity semiconductor barrier layer manufacturing method 有权
标题翻译：低电阻率半导体阻挡层制造方法
公开(公告)号：US06297146B1
公开(公告)日：2001-10-02
申请号：US09655108
申请日：2000-09-05
申请人： Sergey D. Lopatin
发明人： Sergey D. Lopatin
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L23/53242 , H01L23/53247 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum, or tungsten to increase barrier effectiveness and lower resistivity.
摘要翻译：半导体及其制造方法为具有铜，银或金的导电材料的半导体的具有钴，镍或钯的隔离/粘附层提供。阻挡层/粘合层可以与约0.2％至4％的钽，钼或钨合金化，以增加屏障效能和降低电阻率。

45. 发明授权

US06144099A Semiconductor metalization barrier 有权
标题翻译：半导体金属化屏障
公开(公告)号：US06144099A
公开(公告)日：2000-11-07
申请号：US282079
申请日：1999-03-30
申请人： Sergey D. Lopatin , Shekhar Pramanick , Dirk Brown
发明人： Sergey D. Lopatin , Shekhar Pramanick , Dirk Brown
IPC分类号： H01L21/288 , H01L21/768 , H01L23/485 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76846 , H01L21/288 , H01L21/76849 , H01L23/485 , H01L23/53238 , H01L2924/0002
摘要： A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.
摘要翻译：提供了一种半导体金属化屏障及其制造方法，其是沉积在铜焊盘上的钴层和钴钨层的堆叠。

46. 发明授权

US09070944B2 Particle synthesis apparatus and methods 有权
标题翻译：粒子合成装置及方法
公开(公告)号：US09070944B2
公开(公告)日：2015-06-30
申请号：US13572047
申请日：2012-08-10
申请人： Lu Yang , Josef T. Hoog , Miaojun Wang , Dongli Zeng , Robert Z. Bachrach , Hooman Bolandi , Sergey D. Lopatin
发明人： Lu Yang , Josef T. Hoog , Miaojun Wang , Dongli Zeng , Robert Z. Bachrach , Hooman Bolandi , Sergey D. Lopatin
IPC分类号： B01J8/00 , B01J19/24 , B22F9/16 , B22F9/30 , H01M4/525 , B01J19/00 , C01G45/12 , C01G51/00 , H01M4/505 , C01G53/00 , B01J8/06 , B01J8/08 , B01J4/00 , H01M4/36
CPC分类号： H01M4/525 , B01J4/002 , B01J8/001 , B01J8/004 , B01J8/067 , B01J8/087 , B01J19/0006 , B01J19/0013 , B01J19/2415 , B01J19/242 , B01J2208/00044 , B01J2208/0007 , B01J2208/00212 , B01J2208/00415 , B01J2208/0053 , B01J2219/00094 , B01J2219/00135 , B01J2219/00159 , B01J2219/00186 , B01J2219/00198 , B01J2219/002 , B01J2219/00202 , B01J2219/00211 , B01J2219/00238 , B22F9/16 , B22F9/30 , C01G45/1235 , C01G51/42 , C01G53/42 , C01G53/50 , C01P2002/72 , H01M4/366 , H01M4/505 , Y02E60/122
摘要： Apparatus and methods of forming a battery-active material are described. An apparatus includes a first processing section that raises the temperature of a precursor material to a reaction threshold temperature, a second processing section that converts the precursor material to a battery-active material, and a third processing section that cools the resulting battery-active material. Each of the processing sections may be a continuous flow tubular component. The first and third processing sections may be metal, and the second processing section may be a refractory material for high temperature service. The battery-active material is collected using a solids collector.
摘要翻译：描述形成电池活性材料的装置和方法。一种装置包括将前体材料的温度升高到反应阈值温度的第一处理部分，将前体材料转化为电池活性材料的第二处理部分和冷却所得电池活性材料的第三处理部分。每个处理部分可以是连续流动的管状部件。第一加工部和第三加工部可以是金属，第二加工部可以是高温维护用耐火材料。使用固体收集器收集电池活性材料。

47. 发明申请

US20140011088A1 MANUFACTURING OF HIGH CAPACITY PRISMATIC LITHIUM-ION ALLOY ANODES 有权
标题翻译：制备高容量亲和性锂离子合金阳极
公开(公告)号：US20140011088A1
公开(公告)日：2014-01-09
申请号：US14001826
申请日：2012-02-28
申请人： Sergey D. Lopatin , Dmitri A. Brevnov , Eric H. Liu , Robert Z. Bachrach , Connie P. Wang
发明人： Sergey D. Lopatin , Dmitri A. Brevnov , Eric H. Liu , Robert Z. Bachrach , Connie P. Wang
IPC分类号： H01M4/04 , H01M4/64
CPC分类号： H01M4/626 , H01M4/02 , H01M4/0404 , H01M4/0419 , H01M4/0452 , H01M4/134 , H01M4/1395 , H01M4/364 , H01M4/366 , H01M4/38 , H01M4/386 , H01M4/587 , H01M4/625 , H01M4/64 , H01M4/661 , H01M10/0525 , H01M2004/021 , H01M2004/027 , Y02E60/122 , Y02P70/54
摘要： High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodiment, an anode structure for use in a high capacity energy storage device, comprising a conductive collector substrate, a three-dimensional copper-tin-iron porous conductive matrix formed on one or more surfaces of the conductive collector substrate, comprising a plurality of meso-porous structures formed over the conductive current collector, and an anodically active material deposited over the three-dimensional copper-tin-iron porous conductive matrix is provided. In certain embodiments, the three-dimensional copper-tin-iron porous conductive matrix further comprises a plurality of columnar projections formed on the conductive current collector with the plurality of meso-porous structure formed on the plurality of columnar projections.
摘要翻译：更具体地，涉及一种使用形成三维多孔结构的工艺来制造这种高容量能量存储装置和存储装置部件的系统和方法。在一个实施例中，一种用于高容量能量存储装置的阳极结构，包括导电收集器基板，形成在导电集电基板的一个或多个表面上的三维铜 - 锡 - 铁多孔导电基体，包括多个提供了形成在导电集电器上的中孔多孔结构，以及沉积在三维铜 - 锡 - 铁多孔导电基体上的阳极活性材料。在某些实施例中，三维铜 - 锡 - 铁多孔导电基体还包括形成在导电集电器上的多个柱状突起，其中多个中孔多孔结构形成在多个柱状突起上。

48. 发明授权

US08546020B2 Nucleation and growth of tin particles into three dimensional composite active anode for lithium high capacity energy storage device 有权
标题翻译：锡颗粒成核和生长为三维复合活性阳极锂高容量储能装置
公开(公告)号：US08546020B2
公开(公告)日：2013-10-01
申请号：US12909436
申请日：2010-10-21
申请人： Sergey D. Lopatin , Dmitri A. Brevnov , Connie P. Wang , Robert Z. Bachrach
发明人： Sergey D. Lopatin , Dmitri A. Brevnov , Connie P. Wang , Robert Z. Bachrach
IPC分类号： H01M4/76 , H01M4/72 , H01M4/58
CPC分类号： H01M4/80 , C25D3/32 , C25D5/10 , C25D7/0614 , C25D17/28 , H01M4/13 , H01M4/139 , H01M4/364 , H01M4/661 , H01M4/666 , H01M4/667 , H01M4/70 , H01M10/0525 , H01M10/0566
摘要： Embodiments of the present invention generally relate to lithium-ion batteries, and more specifically, to a system and method for fabricating such batteries using thin-film processes that form three-dimensional structures. In one embodiment, an anodic structure used to form an energy storage device is provided. The anodic structure comprises a flexible conductive substrate, a plurality of conductive microstructures formed on the conductive substrate, comprising a plurality of columnar projections and dendritic structures formed over the plurality of columnar projections and a plurality of tin particles formed on the plurality of conductive microstructures. In another embodiment, the anodic structure further comprises a tin nucleation layer comprising tin particles formed on the flexible conductive substrate between the flexible conductive substrate and the plurality of conductive microstructures.
摘要翻译：本发明的实施方案一般涉及锂离子电池，更具体地，涉及使用形成三维结构的薄膜工艺制造这种电池的系统和方法。在一个实施例中，提供了用于形成能量存储装置的阳极结构。阳极结构包括柔性导电基板，形成在导电基板上的多个导电微结构，包括形成在多个柱状突起上的多个柱状突起和树突状结构以及形成在多个导电微结构上的多个锡颗粒。在另一个实施方案中，阳极结构还包括锡成核层，其包含形成在柔性导电基底上的锡颗粒在柔性导电基底和多个导电微结构之间。

49. 发明授权

US08192605B2 Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures 失效
标题翻译：储能电极结构纳米材料表征的计量方法和装置
公开(公告)号：US08192605B2
公开(公告)日：2012-06-05
申请号：US12368105
申请日：2009-02-09
申请人： Sergey D. Lopatin , Dmitri A. Brevnov , Eric Casavant , Robert Z. Bachrach
发明人： Sergey D. Lopatin , Dmitri A. Brevnov , Eric Casavant , Robert Z. Bachrach
IPC分类号： H01M4/02
CPC分类号： C25D5/18 , H01G11/26 , H01G11/30 , H01G11/50 , H01G11/86 , H01M4/0438 , H01M4/0452 , H01M4/1395 , Y02E60/13
摘要： Embodiments described herein generally relate to methods and apparatus for forming an electrode structure used in an energy storage device. More particularly, embodiments described herein relate to methods and apparatus for characterizing nanomaterials used in forming high capacity electrode structures for energy storage devices. In one embodiment a process for forming an electrode structure for an energy storage device is provided. The process comprises depositing a columnar metal structure over a substrate at a first current density by a diffusion limited deposition process, measuring a capacitance of the columnar metal structure to determine a surface area of the columnar metal structure, and depositing three dimensional porous metal structures over the columnar metal structure at a second current density greater than the first current density.
摘要翻译：本文描述的实施例一般涉及用于形成在能量存储装置中使用的电极结构的方法和装置。更具体地，本文描述的实施例涉及用于形成用于形成用于能量存储装置的高容量电极结构的纳米材料的方法和装置。在一个实施例中，提供了一种用于形成用于能量存储装置的电极结构的方法。该方法包括通过扩散限制沉积工艺在第一电流密度的衬底上沉积柱状金属结构，测量柱状金属结构的电容以确定柱状金属结构的表面积，并将三维多孔金属结构沉积在所述柱状金属结构的第二电流密度大于所述第一电流密度。

50. 发明申请

US20110129732A1 COMPRESSED POWDER 3D BATTERY ELECTRODE MANUFACTURING 审中-公开
标题翻译：压缩粉末3D电池电极制造
公开(公告)号：US20110129732A1
公开(公告)日：2011-06-02
申请号：US12839051
申请日：2010-07-19
申请人： Robert Z. Bachrach , Sergey D. Lopatin , Connie P. Wang , Donald J.K. Olgado
发明人： Robert Z. Bachrach , Sergey D. Lopatin , Connie P. Wang , Donald J.K. Olgado
IPC分类号： H01M4/70 , H01M4/485 , H01M4/52 , H01M4/58 , H01M4/505 , H01M4/38 , H01M4/583 , B05C13/00 , B05C11/00 , B05B5/025 , B05B7/16 , B05B7/20 , B05C1/08 , B05C5/00
CPC分类号： H01M4/70 , H01M4/134 , H01M4/139 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/5825 , H01M4/587 , H01M4/661
摘要： Embodiments of the invention contemplate forming an electrochemical device and device components, such as a battery cell or supercapacitor, using thin-film or layer deposition processes and other related methods for forming the same. In one embodiment, a battery bi-layer cell is provided. The battery bi-layer cell comprises an anode structure comprising a conductive collector substrate, a plurality of pockets formed on the conductive collector substrate by conductive microstructures comprising a plurality of columnar projections, and an anodically active powder deposited in and over the plurality of pockets, an insulative separator layer formed over the plurality of pockets, and a cathode structure joined over the insulative separator.
摘要翻译：本发明的实施方案考虑使用薄膜或层沉积工艺和其它相关方法形成电化学装置和器件组件，例如电池单元或超级电容器。在一个实施例中，提供电池双层电池。电池双层电池包括阳极结构，其包括导电收集器基板，通过包括多个柱状突起的导电微结构形成在导电收集器基板上的多个凹穴以及沉积在多个凹穴中和之上的阳极活性粉末，形成在所述多个凹穴上的绝缘分离层，以及连接在所述绝缘分离器上的阴极结构。

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