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    • 44. 发明授权
    • Solid-state image pickup device
    • 固态图像拾取装置
    • US06657664B2
    • 2003-12-02
    • US08595173
    • 1996-02-01
    • Isamu Ueno
    • Isamu Ueno
    • H04N314
    • H04N5/3742H04N5/3692H04N5/374
    • A solid-state image pickup device is provided with plural blocks, each comprising at least two pixels, allowing reading of signals of pixel blocks at high speed without signal loss. The output signals of the blocks are connected in common, respectively through block buffers, thereby providing the maximum or minimum value of the pixels. Each block buffer has an input at the base of a self-biased transistor and an output in an emitter follower circuit. There also are provided first photoelectric conversion elements for reading out the photoelectric conversion charges of respective pixels and second photoelectric conversion elements for reading out the photoelectric conversion charges respectively in blocks, each composed of plural pixels, and the outputs of the second photoelectric conversion elements are connected in common to a common line through maximum output circuits.
    • 固态图像拾取装置设置有多个块,每个块包括至少两个像素,允许高速读取像素块的信号而没有信号丢失。 块的输出信号分别通过块缓冲器共同连接,从而提供像素的最大值或最小值。 每个块缓冲器具有在自偏置晶体管的基极处的输入和在射极跟随器电路中的输出。 还提供了用于读出各像素的光电转换电荷的第一光电转换元件和用于分别读出由多个像素组成的块的光电转换电荷的第二光电转换元件,并且第二光电转换元件的输出为 通过最大输出电路将共同连接到公共线路。
    • 45. 发明授权
    • Photoelectric conversion device
    • 光电转换装置
    • US06342920B2
    • 2002-01-29
    • US09407298
    • 1999-09-29
    • Isamu Ueno
    • Isamu Ueno
    • H04N5335
    • H04N5/37452H04N5/359H04N5/3592H04N5/374
    • This invention provides an element having a skimming charge transfer function in an X-Y address type photoelectric conversion device using, e.g., a CMOS sensor, and a photoelectric conversion device, which accumulates photoelectric signal charges produced by a photoelectric conversion element in a control electrode (gate) of a MOS transistor so as to obtain a signal with a high S/N ratio by removing signal components produced by background radiation without using any CCD as an accumulation means of skimming charges, has a skimming electrode for transferring skimming charges of those produced by the photoelectric conversion element, an n+-type region for accumulating the transferred skimming charges, a MOS transistor for reading out potential changes caused by the skimming charges, and a circuit for automatically controlling the amount of skimming charges to be transferred.
    • 本发明提供了一种在例如CMOS传感器的XY地址型光电转换装置中具有撇取电荷转移功能的元件和在控制电极(栅极)中积聚由光电转换元件产生的光电信号电荷的光电转换装置 ),以便通过除去由背景辐射产生的信号分量而不使用任何CCD作为撇取电荷的累积装置来获得具有高S / N比的信号,具有用于传送由撇号电极产生的撇去电荷的撇渣电极 光电转换元件,用于累积转移的撇号电荷的n +型区域,用于读出由撇取电荷引起的电位变化的MOS晶体管,以及用于自动控制要转移的撇取电荷量的电路。
    • 49. 发明授权
    • Dual buffer peak detecting apparatus
    • 双缓冲峰检测装置
    • US5942920A
    • 1999-08-24
    • US789871
    • 1997-01-28
    • Isamu Ueno
    • Isamu Ueno
    • G01R19/04H03K17/62H04B17/00
    • G01R19/04
    • To solve a problem that, as the number of signal sources for outputting peak values decreases, a peak output voltage decreases, and to improve detecting precision, there are provided a plurality of first buffer units �Q.sub.11 .multidot.Q.sub.21 .multidot.M.sub.31 to Q.sub.13 .multidot.Q.sub.23 .multidot.M.sub.33 !, which are emitter-follower circuits, to each of which a signal is input, a plurality of second buffer units �Q.sub.31 to Q.sub.33 ! which are respectively connected to the first buffer units and an output unit for outputting the detected peak signal.
    • 为了解决由于输出峰值的信号源的数量减少,峰值输出电压降低,并且为了提高检测精度,提供了多个第一缓冲单元[Q11xQ21xM31至Q13xQ23xM33],它们是射极跟随器 电路,输入信号中的每一个,分别连接到第一缓冲单元的多个第二缓冲单元[Q31至Q33]和用于输出检测到的峰值信号的输出单元。