专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US07629629B2 Semiconductor nanowire and semiconductor device including the nanowire 失效
标题翻译：包括纳米线的半导体纳米线和半导体器件
公开(公告)号：US07629629B2
公开(公告)日：2009-12-08
申请号：US10588605
申请日：2005-12-21
申请人： Tohru Saitoh , Takahiro Kawashima
发明人： Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L29/76
CPC分类号： H01L29/775 , B82Y10/00 , H01L27/1214 , H01L29/0665 , H01L29/0673 , H01L29/78618 , H01L29/78681 , H01L29/78684 , H01L29/7869 , H01L29/78696 , Y10S977/762 , Y10S977/938
摘要： A nanowire (100) according to the present invention includes a plurality of contact regions (10a, 10b) and at least one channel region (12), which is connected to the contact regions (10a, 10b). The channel region (12) is made of a first semiconductor material and the surface of the channel region (12) is covered with an insulating layer that has been formed selectively on the channel region (12). The contact regions (10a, 10b) are made of a second semiconductor material, which is different from the first semiconductor material for the channel region (12), and at least the surface of the contact regions (10a, 10b) includes a conductive portion.
摘要翻译：根据本发明的纳米线（100）包括连接到接触区域（10a，10b）的多个接触区域（10a，10b）和至少一个沟道区域（12）。通道区域（12）由第一半导体材料制成，沟道区域（12）的表面被选择性地形成在沟道区域（12）上的绝缘层覆盖。接触区域（10a，10b）由与沟道区域（12）的第一半导体材料不同的第二半导体材料制成，并且至少接触区域（10a，10b）的表面包括导电部分。

42. 发明授权

US08106382B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US08106382B2
公开(公告)日：2012-01-31
申请号：US12305824
申请日：2007-06-18
申请人： Tohru Saitoh , Takahiro Kawashima
发明人： Tohru Saitoh , Takahiro Kawashima
IPC分类号： H01L29/66
CPC分类号： H01L29/78696 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L29/41733 , H01L29/66772 , H01L29/78621 , H01L29/78654
摘要： A source electrode 105 which is connected to a portion of at least one semiconductor nanostructure 103 among a plurality of semiconductor nanostructures, a drain electrode 106 connected to another portion of the semiconductor nanostructure 103, and a gate electrode 102 capable of controlling electrical conduction of the semiconductor nanostructure 103 are included. The semiconductor nanostructures 103 include a low concentration region 108 having a relatively low doping concentration and a pair of high concentration regions 107 having a higher doping concentration than that of the low concentration region 108 and being connected to both ends of the low concentration region 108. The doping concentration of the high concentration regions 107 is 1×1019 cm−3 or more; the length of the low concentration region 108 is shorter than a length of the gate electrode 102 along a direction from the source electrode 105 to the drain electrode 106; and the length of the gate electrode 102 is shorter than the interspace between the source electrode 105 and the drain electrode 106.
摘要翻译：连接到多个半导体纳米结构中的至少一个半导体纳米结构103的一部分的源电极105，连接到半导体纳米结构103的另一部分的漏电极106和能够控制半导体纳米结构103的导电的栅电极102 包括半导体纳米结构103。半导体纳米结构103包括具有相对低的掺杂浓度的低浓度区域108和具有比低浓度区域108的掺杂浓度更高的掺杂浓度的一对高浓度区域107并且连接到低浓度区域108的两端。高浓度区域107的掺杂浓度为1×1019cm-3以上; 低浓度区域108的长度比沿源极电极105至漏电极106的方向的栅电极102的长度短; 并且栅电极102的长度比源电极105和漏电极106之间的间隙短。

43. 发明申请

US20100224915A1 METHOD FOR PRODUCING SEMICONDUCTOR CHIP, AND FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：用于制造半导体芯片的方法和场效应晶体管及其制造方法
公开(公告)号：US20100224915A1
公开(公告)日：2010-09-09
申请号：US12159352
申请日：2007-01-12
申请人： Takahiro Kawashima , Tohru Saitoh , Tohru Nakagawa , Hideo Torii
发明人： Takahiro Kawashima , Tohru Saitoh , Tohru Nakagawa , Hideo Torii
IPC分类号： H01L29/78 , H01L21/20 , H01L21/336
CPC分类号： H01L27/1266 , H01L21/8221 , H01L27/0688 , H01L27/1203 , H01L27/1285 , H01L27/1292
摘要： According to a method of the present invention for manufacturing a semiconductor piece, at least two semiconductor layers (12) are first formed on a substrate (10) by stacking a sacrificial layer (11) and the semiconductor layer (12) on the substrate (10) in this order and repeating this stacking. Next, the semiconductor layers (12) are divided into pieces by etching part of the sacrificial layers (11) and part of the semiconductor layers (12). Then, the pieces are separated from the substrate by removing the sacrificial layers (11).
摘要翻译：根据本发明的用于制造半导体片的方法，首先通过在衬底（10）上层叠牺牲层（11）和半导体层（12）来形成至少两个半导体层（12） 10），并重复该堆叠。接下来，通过蚀刻部分牺牲层（11）和部分半导体层（12）将半导体层（12）分割成多个。然后，通过去除牺牲层（11）将片与衬底分离。

44. 发明申请

US20120156833A1 NANOWIRE TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：纳米晶体管及其制造方法
公开(公告)号：US20120156833A1
公开(公告)日：2012-06-21
申请号：US13399521
申请日：2012-02-17
申请人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada , Norishige Nanai , Takayuki Takeuchi
发明人： Takahiro Kawashima , Tohru Saitoh , Kenji Harada , Norishige Nanai , Takayuki Takeuchi
IPC分类号： H01L21/336
CPC分类号： H01L29/0673 , H01L29/66772 , H01L29/78696
摘要： A nanowire transistor according to the present invention includes: at least one nanowire 13 including a core portion 13a that functions as a channel region and an insulating shell portion 13b that covers the surface of the core portion 13a; source and drain electrodes 14 and 15, which are connected to the nanowire 13; and a gate electrode 21 for controlling conductivity in at least a part of the core portion 13a of the nanowire 13. The core portion 13a is made of semiconductor single crystals including Si and has a cross section with a curved profile on a plane that intersects with the longitudinal axis thereof. The insulating shell portion 13b is made of an insulator including Si and functions as at least a portion of a gate insulating film.
摘要翻译：根据本发明的纳米线晶体管包括：至少一个纳米线13，其包括用作沟道区的芯部13a和覆盖芯部13a的表面的绝缘壳部13b; 源极和漏极14和15，其连接到纳米线13; 以及用于控制纳米线13的芯部13a的至少一部分的导电性的栅电极21.芯部13a由包含Si的半导体单晶制成，并且在与其纵轴。绝缘外壳部分13b由包括Si的绝缘体制成，并且起到至少一部分栅极绝缘膜的作用。

45. 发明授权

US08198622B2 Nanowire, device comprising nanowire, and their production methods 有权
标题翻译：纳米线，包括纳米线的器件及其制造方法
公开(公告)号：US08198622B2
公开(公告)日：2012-06-12
申请号：US12518821
申请日：2007-11-29
申请人： Takahiro Kawashima , Tohru Saitoh
发明人： Takahiro Kawashima , Tohru Saitoh
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/15 , C30B11/12 , C30B29/605 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/028 , H01L31/0352 , H01L33/18 , H01L43/08 , Y02E10/547 , Y10S977/762
摘要： A nanowire according to the present invention includes: a nanowire body made of a first material; and a plurality of semiconductor particle made of a second material and being contained in at least a portion of the interior of the nanowire body.
摘要翻译：根据本发明的纳米线包括：由第一材料制成的纳米线体; 以及由第二材料制成并被包含在纳米线体的内部的至少一部分中的多个半导体颗粒。

46. 发明授权

US07772125B2 Structure in which cylindrical microstructure is maintained in anisotropic groove, method for fabricating the same, and semiconductor device, TFT driving circuit, panel, display and sensor using the structure in which cylindrical microstructure is maintained in anisotropic groove 有权
标题翻译：在各向异性沟槽中保持圆柱形微结构的结构，其制造方法以及半导体器件，TFT驱动电路，面板，显示器和传感器，其使用在各向异性凹槽中保持圆柱形微结构的结构
公开(公告)号：US07772125B2
公开(公告)日：2010-08-10
申请号：US11631284
申请日：2006-02-08
申请人： Takahiro Kawashima , Tohru Saitoh , Norihisa Mino
发明人： Takahiro Kawashima , Tohru Saitoh , Norihisa Mino
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L27/1292 , H01L29/0673 , H01L29/775 , H01L29/78603 , H01L29/78696 , H01L51/0048 , Y10S977/882
摘要： A method for fabricating a structure according to the present invention includes the steps of: forming a groove in a substrate, dropping a solution in which microstructures such as nanowires are dispersed into the groove and the step of evaporating the solution to arrange the microstructures in the groove in a self-organizing manner.
摘要翻译：根据本发明的制造结构的方法包括以下步骤：在基板中形成凹槽，将其中诸如纳米线的微结构的溶液滴落到凹槽中，并且将溶液蒸发以将微结构布置在以自组织的方式凹槽。

47. 发明申请

US20080303029A1 Structure, Semiconductor Device, Tft Driving Circuit, Panel, Display and Sensor for Maintaining Microstructure, Methods for Fabricating the Structure, the Semiconductor Device, the Tft Driving Circuit, the Panel, the Display and the Sensor 有权
标题翻译：结构，半导体器件，Tft驱动电路，面板，用于维护微结构的显示和传感器，用于制造结构的方法，半导体器件，Tft驱动电路，面板，显示器和传感器
公开(公告)号：US20080303029A1
公开(公告)日：2008-12-11
申请号：US11631284
申请日：2006-02-08
申请人： Takahiro Kawashima , Tohru Saitoh , Norihisa Mino
发明人： Takahiro Kawashima , Tohru Saitoh , Norihisa Mino
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , H01L27/1292 , H01L29/0673 , H01L29/775 , H01L29/78603 , H01L29/78696 , H01L51/0048 , Y10S977/882
摘要： A method for fabricating a structure according to the present invention includes the steps of: forming a groove in a substrate, dropping a solution in which microstructures such as nanowires are dispersed into the groove and the step of evaporating the solution to arrange the microstructures in the groove in a self-organizing manner.
摘要翻译：根据本发明的制造结构的方法包括以下步骤：在基板中形成凹槽，将其中诸如纳米线的微结构的溶液滴落到凹槽中，并且将溶液蒸发以将微结构布置在以自组织的方式凹槽。

48. 发明申请

US20060125025A1 Vertical field effect transistor and method for fabricating the same 有权
标题翻译：垂直场效应晶体管及其制造方法
公开(公告)号：US20060125025A1
公开(公告)日：2006-06-15
申请号：US11344574
申请日：2006-02-01
申请人： Takahiro Kawashima , Tohru Saitoh , Takeshi Takagi
发明人： Takahiro Kawashima , Tohru Saitoh , Takeshi Takagi
IPC分类号： H01L29/76
CPC分类号： H01L29/78696 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/1606 , H01L29/42384 , H01L29/7781 , H01L29/78642 , Y10S977/938
摘要： A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region where electric carriers are transported; a lower electrode, connected to the bottom of the active region and functioning as one of source and drain regions; an upper electrode, connected to the top of the active region and functioning as the other of the source and drain regions; a gate electrode for controlling the electric conductivity of at least a portion of the bundle of linear structures included in the active region; and a gate insulating film arranged between the active region and the gate electrode to electrically isolate the gate electrode from the bundle of linear structures. The transistor further includes a dielectric portion between the upper and lower electrodes. The upper electrode is located over the lower electrode with the dielectric portion interposed and includes an overhanging portion that sticks out laterally from over the dielectric portion. The active region is located right under the overhanging portion of the upper electrode.
摘要翻译：垂直场效应晶体管包括：有源区，其具有用作传输电载体的沟道区的线性结构束; 下电极，连接到有源区的底部并用作源极和漏极区之一; 上电极，连接到有源区的顶部并用作源极和漏极区域中的另一个; 用于控制所述有源区域中包括的所述线性结构束的至少一部分的电导率的栅电极; 以及栅极绝缘膜，其布置在所述有源区和所述栅电极之间，以将所述栅电极与所述线结构的束电隔离。晶体管还包括在上电极和下电极之间的电介质部分。上电极位于下电极的上方，电介质部分插入，并且包括从电介质部分的上方向外伸出的突出部分。有源区域位于上电极的伸出部分正下方。

49. 发明授权

US6087725A Low barrier ohmic contact for semiconductor light emitting device 失效
标题翻译：半导体发光器件的低阻挡欧姆接触
公开(公告)号：US6087725A
公开(公告)日：2000-07-11
申请号：US161498
申请日：1998-09-28
申请人： Shigeo Yoshii , Yoichi Sasai , Satoshi Kamiyama , Tohru Saitoh , Takashi Nishikawa , Ryoko Miyanaga
发明人： Shigeo Yoshii , Yoichi Sasai , Satoshi Kamiyama , Tohru Saitoh , Takashi Nishikawa , Ryoko Miyanaga
IPC分类号： H01L33/28 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/28
摘要： On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.
摘要翻译：在n型GaAs的衬底上，n型Zn0.9Mg0.1S0.13Se0.87的n型覆层，n型ZnS0.06Se0.94的n型导光层，n型ZnS0.06Se0.94的有源层 ZnCdSe和p型ZnS0.06Se0.94的p型导光层依次形成。在p型导光层上形成p型接触结构。 p型接触结构包括第一层p型ZnS0.31Se0.54Te0.15，第二层ZnS0.47Se0.28Te0.25，第三层p型ZnS0.65Te0.35，第四层的p型ZnS0.5Te0.5和第五层p型ZnTe。

50. 发明授权

US06169296A Light-emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：US06169296A
公开(公告)日：2001-01-02
申请号：US09176906
申请日：1998-10-22
申请人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
发明人： Satoshi Kamiyama , Shigeo Yoshii , Ryoko Miyanaga , Takashi Nishikawa , Tohru Saitoh , Yoichi Sasai
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/145 , H01L33/38 , H01L33/42
摘要： The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.
摘要翻译：本发明的发光二极管器件包括有源层，p型接触层，肖特基电极和欧姆电极。有源层形成在n型半导体衬底上。接触层形成在有源层上。肖特基电极选择性地形成在接触层上并与接触层进行肖特基接触。欧姆电极形成为围绕接触层上的肖特基电极并与肖特基电极电连接并透射从有源层发射的光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式