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41. 发明授权

US5965309A Focus or exposure dose parameter control system using tone reversing patterns 失效
标题翻译：聚焦或曝光剂量参数控制系统使用色调反转模式
公开(公告)号：US5965309A
公开(公告)日：1999-10-12
申请号：US921986
申请日：1997-08-28
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Mark E. Lagus
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Mark E. Lagus
IPC分类号： G03F7/20 , G03F7/207 , G03F9/00
CPC分类号： G03F7/70558 , G03F7/70641
摘要： Focus and exposure parameters may be controlled in a lithographic process for manufacturing microelectronics by creating a complementary tone pattern of shapes and spaces in a resist film on a substrate. Corresponding dimensions of the resist shape and space are measured and the adequacy of focus or exposure dose are determined as a function of the measured dimensions. Etching parameters may also be controlled by creating a complementary tone pattern of etched shapes and spaces on a substrate. Corresponding dimensions of the etched shape and space are measured and the adequacy of etching parameters are determined as a function of the measured dimensions.
摘要翻译：聚焦和曝光参数可以通过在基板上的抗蚀剂膜中产生形状和空间的互补色调图案来制造微电子学的光刻工艺中进行控制。测量抗蚀剂形状和空间的相应尺寸，并根据所测量的尺寸确定聚焦或曝光剂量的适当性。也可以通过在衬底上产生蚀刻形状和空间的互补色调图案来控制蚀刻参数。测量蚀刻形状和空间的相应尺寸，并根据所测量的尺寸确定蚀刻参数的合适性。

42. 发明授权

US5532089A Simplified fabrication methods for rim phase-shift masks 失效
标题翻译：轮缘相移掩模的简化制造方法
公开(公告)号：US5532089A
公开(公告)日：1996-07-02
申请号：US173383
申请日：1993-12-23
申请人： William J. Adair , Timothy A. Brunner , Derek B. Dove , Louis L. Hsu , Chi-Min Yuan
发明人： William J. Adair , Timothy A. Brunner , Derek B. Dove , Louis L. Hsu , Chi-Min Yuan
IPC分类号： G03F1/29 , H01L21/027 , G03F9/00
CPC分类号： G03F1/29 , Y10T428/24322
摘要： A simplified method of forming a phase shift structure for a lithographic mask includes the conformal deposition of a phase shift material, preferably having an index of refraction similar to that of the mask substrate, over a patterned layer of opaque material and exposed areas of the mask substrate corresponding to the pattern. The thickness of the opaque patterned layer, in combination with the conformal deposition preferably establishes a differentially altered optical path length to produce a phase shift which enhances contrast and increases illumination and resolution in fine patterns. In variant forms of the invention, the conformal deposition of either phase shift material or a sidewall spacer material is followed by an anisotropic removal of material to form the phase shift structure. The application of phase shift material over the mask surface increases durability of the mask and also enhances contrast of images produced with other phase-shift mask feature structures, such as Levenson-type shifters.
摘要翻译：形成用于光刻掩模的相移结构的简化方法包括在不透明材料的图案化层和掩模的暴露区域上的相移材料的共形沉积，优选地具有类似于掩模衬底的折射率的相移材料衬底对应于图案。不透明图案层的厚度与保形沉积结合优选地建立差异改变的光路长度以产生增强对比度并增加精细图案中的照明和分辨率的相移。在本发明的变体形式中，相移材料或侧壁间隔物材料的共形沉积之后是材料的各向异性去除以形成相移结构。在掩模表面上施加相移材料增加了掩模的耐久性，并且还增强了与其他相移掩模特征结构（例如莱文森型移位器）产生的图像的对比度。

43. 发明授权

US4475811A Overlay test measurement systems 失效
标题翻译：覆盖测试测量系统
公开(公告)号：US4475811A
公开(公告)日：1984-10-09
申请号：US489664
申请日：1983-04-28
申请人： Timothy A. Brunner
发明人： Timothy A. Brunner
IPC分类号： G03F7/20 , G03B43/00
CPC分类号： G03F7/70633
摘要： This invention relates to overlay test measurement systems which are useful for testing lithographic instruments used in making microcircuits, which includes a single second-level pattern set in the middle of a checkerboard-like arrangement of first level patterns alternating with opaque patterns, the patterns being constructed and arranged so that if a second substantially identical cluster is imaged on the first cluster with the second level pattern of the second cluster aligned with any one of the first level patterns on the first cluster then the opaque patterns of the second cluster would be aligned with the other first level patterns on the first cluster thereby protecting them from exposure.According to a feature of the invention there is provided a method of making a test wafer of the type described as well as a method of testing the alignment of lithographic tools using the aforesaid test mask and test wafer.
摘要翻译：本发明涉及覆盖测试测量系统，其可用于测试用于制造微电路的光刻仪器，其包括在与不透明图案交替的第一级图案的棋盘状布置的中间的单个二级图案，所述图案是构造和布置使得如果在第一簇上成像第二基本相同的簇，其中第二簇的第二层图案与第一簇上的任何一个第一层图案对准，则第二簇的不透明图案将对齐与第一集群上的其他第一级图案，从而保护它们免受曝光。根据本发明的特征，提供了一种制造所述类型的测试晶片的方法以及使用上述测试掩模和测试晶片测试光刻工具的对准的方法。

44. 发明授权

US09360858B2 Alignment data based process control system 有权
标题翻译：基于对齐数据的过程控制系统
公开(公告)号：US09360858B2
公开(公告)日：2016-06-07
申请号：US13204955
申请日：2011-08-08
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Allen H. Gabor , Oleg Gluschenkov , Vinayan C. Menon
IPC分类号： G06F19/00 , G05B19/401
CPC分类号： G05B19/401 , G05B2219/2602 , G05B2219/45031
摘要： Deformation of a substrate due to one or more processing steps is determined by measuring substrate alignment data at lithographic processing steps before and after the one or more processing steps. Any abnormal pattern in the alignment data differential is identified by comparing the calculated alignment data differential with previous data accumulated in a database. By comparing the abnormal pattern with previously identified tool-specific patterns for alignment data differential, a processing step that introduces the abnormal pattern and/or the nature of the abnormal processing can be identified, and appropriate process control measures can be taken to rectify any anomaly in the identified processing step.
摘要翻译：通过在一个或多个处理步骤之前和之后的光刻处理步骤中测量衬底对准数据来确定由于一个或多个处理步骤导致的衬底的变形。通过将计算的对准数据差异与在数据库中累积的先前数据进行比较来识别对准数据差异中的任何异常模式。通过将异常模式与先前识别的针对对准数据差异的工具特定模式进行比较，可以识别引入异常模式和/或异常处理性质的处理步骤，并且可以采取适当的过程控制措施来纠正任何异常在所识别的处理步骤中。

45. 发明申请

US20100208264A1 POLARIZATION MONITORING RETICLE DESIGN FOR HIGH NUMERICAL APERTURE LITHOGRAPHY SYSTEMS 有权
标题翻译：高精度光刻系统的极化监测设计
公开(公告)号：US20100208264A1
公开(公告)日：2010-08-19
申请号：US12707962
申请日：2010-02-18
申请人： Timothy A. Brunner , Gregory R. McIntyre
发明人： Timothy A. Brunner , Gregory R. McIntyre
IPC分类号： G01J4/00 , G06F17/50
CPC分类号： G06F17/50 , G01J4/04 , G03F1/44 , G03F7/70466 , G03F7/70566
摘要： This invention relates to the manufacture of semiconductor substrates such as wafers and to a method for monitoring the state of polarization incident on a photomask in projection printing using a specially designed polarization monitoring reticle for high numerical aperture lithographic scanners. The reticle measures 25 locations across the slit and is designed for numerical apertures above 0.85. The monitors provide a large polarization dependent signal which is more sensitive to polarization. A double exposure method is also provided using two reticles where the first reticle contains the polarization monitors, clear field reference regions and low dose alignment marks. The second reticle contains the standard alignment marks and labels. For a single exposure method, a tri-PSF low dose alignment mark is used. The reticles also provide for electromagnetic bias wherein each edge is biased depending on that edge's etch depth.
摘要翻译：本发明涉及诸如晶片的半导体衬底的制造以及用于在使用专门设计的用于高数值孔径光刻扫描仪的偏振监视掩模版的投影印刷中监视入射到光掩模上的偏振状态的方法。标线测量穿过狭缝的25个位置，并设计为高于0.85的数值孔径。监视器提供对极化更敏感的大偏振相关信号。使用两个掩模版也提供双曝光方法，其中第一掩模版包含偏振监视器，清晰的场参考区域和低剂量对准标记。第二个掩模版包含标准对准标记和标签。对于单次曝光方法，使用三PSF低剂量对准标记。标线还提供电磁偏压，其中每个边缘根据该边缘的蚀刻深度而偏置。

46. 发明申请

US20090265679A1 SYSTEM AND METHOD OF PREDICTING PROBLEMATIC AREAS FOR LITHOGRAPHY IN A CIRCUIT DESIGN 有权
标题翻译：用于电路设计中的图形的预测问题的系统和方法
公开(公告)号：US20090265679A1
公开(公告)日：2009-10-22
申请号：US12104585
申请日：2008-04-17
申请人： Timothy A. Brunner , Stephen E. Greco , Bernhard R. Liegl , Hua Xiang
发明人： Timothy A. Brunner , Stephen E. Greco , Bernhard R. Liegl , Hua Xiang
IPC分类号： G06F17/50
CPC分类号： G06F17/5045 , G03F1/144 , G03F1/36 , G03F1/70 , G03F7/705
摘要： A system and method is provided which predicts problematic areas for lithography in a circuit design, and more specifically, which uses modeling data from a modeling tool to accurately predict problematic lithographic areas. The method includes identifying surface heights of plurality of tiles of a modeled wafer, and mathematically mimicking a lithographic tool to determine best planes of focus for exposure for the plurality of tiles.
摘要翻译：提供了一种系统和方法，其预测电路设计中的光刻的有问题的区域，更具体地，其使用来自建模工具的建模数据来准确地预测有问题的光刻区域。该方法包括识别模拟晶片的多个瓦片的表面高度，以及数学上模拟光刻工具以确定用于多个瓦片的曝光的最佳焦点平面。

47. 发明授权

US07585601B2 Method to optimize grating test pattern for lithography monitoring and control 失效
标题翻译：优化用于光刻监测和控制的光栅测试图案的方法
公开(公告)号：US07585601B2
公开(公告)日：2009-09-08
申请号：US12210699
申请日：2008-09-15
申请人： Timothy A. Brunner , Christopher P. Ausschnitt
发明人： Timothy A. Brunner , Christopher P. Ausschnitt
IPC分类号： G03F9/00
CPC分类号： G03B27/00 , G03F1/44 , G03F7/70641
摘要： A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1
摘要翻译：制造用于光刻成像系统的过程监视光栅图案的方法包括确定多个间隔相邻的线元素的最小可分辨间距，以及选择大于1的整数倍M，大于1的过程监视光栅周期最小可分辨的音高。该方法然后包括设计具有彼此间隔开的多个相邻组合的线组件的过程监视光栅图案。每组分组的线元素通过过程监视光栅周期与相邻的一组分组线元素间隔开并平行，使得当过程监视光栅图案由光刻成像系统投影时，每组中的线元素不能从在1 <| m |≤= M的范围内由线路元件产生的衍射阶数m的傅立叶系数为零。

48. 发明申请

US20090011342A1 METHOD TO OPTIMIZE GRATING TEST PATTERN FOR LITHOGRAPHY MONITORING AND CONTROL 失效
标题翻译：优化用于岩石监测和控制的测绘图案的方法
公开(公告)号：US20090011342A1
公开(公告)日：2009-01-08
申请号：US12210699
申请日：2008-09-15
申请人： Timothy A. Brunner , Christopher P. Ausschnitt
发明人： Timothy A. Brunner , Christopher P. Ausschnitt
IPC分类号： G03F1/00 , G03F7/20 , G06F19/00
CPC分类号： G03B27/00 , G03F1/44 , G03F7/70641
摘要： A method of making a process monitor grating pattern for use in a lithographic imaging system comprises determining minimum resolvable pitch of a plurality of spaced, adjacent line elements, and selecting a process monitor grating period that is an integer multiple M, greater than 1, of the minimum resolvable pitch. The method then includes designing a process monitor grating pattern having a plurality of adjacent sets of grouped line elements spaced from each other. Each set of grouped line elements is spaced from and parallel to an adjacent set of grouped line elements by the process monitor grating period, such that when the process monitor grating pattern is projected by the lithographic imaging system the line elements in each set are unresolvable from each other and Fourier coefficients of diffracted orders m created by the line elements in the range of 1
摘要翻译：制造用于光刻成像系统的过程监视光栅图案的方法包括确定多个间隔相邻的线元素的最小可分辨间距，以及选择大于1的整数倍M，大于1的过程监视光栅周期最小可分辨的音高。该方法然后包括设计具有彼此间隔开的多个相邻组合的线组件的过程监视光栅图案。每组分组的线元素通过过程监视光栅周期与相邻的一组分组线元素间隔开并平行，使得当过程监视光栅图案由光刻成像系统投影时，每组中的线元素不能从在1 <| m |≤= M的范围内由线路元件产生的衍射阶数m的傅立叶系数为零。

49. 发明授权

US07473648B2 Double exposure double resist layer process for forming gate patterns 失效
标题翻译：用于形成栅极图案的双曝光双光刻胶层工艺
公开(公告)号：US07473648B2
公开(公告)日：2009-01-06
申请号：US11308106
申请日：2006-03-07
申请人： Timothy A. Brunner , James A. Culp , Lars W. Liebmann
发明人： Timothy A. Brunner , James A. Culp , Lars W. Liebmann
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/76895 , H01L21/0274 , H01L21/28035 , H01L21/28123
摘要： A method of forming a planar CMOS transistor divides the step of forming the gate layer into a first step of patterning a resist layer with a first portion of the gate layer pattern and then etching the polysilicon with the pattern of the gates. A second step patterns a second resist layer with the image of the gate pads and local interconnect and then etching the polysilicon with the pattern of the gate pads and local interconnect, thereby reducing the number of diffraction and other cross-talk from different exposed areas.
摘要翻译：形成平面CMOS晶体管的方法将形成栅极层的步骤分成用栅极层图案的第一部分图案化抗蚀剂层，然后用栅极图案蚀刻多晶硅的第一步骤。第二步利用栅极焊盘和局部互连的图像来形成第二抗蚀剂层，然后用栅极焊盘和局部互连的图案蚀刻多晶硅，从而减少来自不同曝光区域的衍射数量和其它串扰。

50. 发明授权

US07439001B2 Focus blur measurement and control method 失效
标题翻译：聚焦模糊测量和控制方法
公开(公告)号：US07439001B2
公开(公告)日：2008-10-21
申请号：US11206326
申请日：2005-08-18
申请人： Christopher P. Ausschnitt , Timothy A. Brunner , Shahid A. Butt , Daniel A. Corliss
发明人： Christopher P. Ausschnitt , Timothy A. Brunner , Shahid A. Butt , Daniel A. Corliss
IPC分类号： G03C5/00 , G03F9/00
CPC分类号： G03F7/70641 , G03F7/70533 , G03F7/70625
摘要： A method for optimizing imaging and process parameter settings in a lithographic pattern imaging and processing system is disclosed. The method includes correlating the dimensions of a first set of at least one control pattern printed in a lithographic resist layer, measured at three or more locations on or within the pattern which correspond to differing dose, defocus and blur sensitivity. The method then includes measuring the dimensions on subsequent sets of control patterns, printed in a lithographic resist layer, at three or more locations on or within each pattern, of which a minimum of three locations match those measured in the first set, and determining the effective dose, defocus and blur values associated with forming the subsequent sets of control patterns by comparing the dimensions at the matching locations with the correlated dependencies. A method for determining blur, focus and exposure dose error in lithographic imaging is also disclosed.
摘要翻译：公开了一种在光刻图案成像和处理系统中优化成像和处理参数设置的方法。该方法包括将印刷在光刻抗蚀剂层中的至少一个控制图案的第一组的尺寸相关联，在对应于不同剂量，散焦和模糊灵敏度的图案之上或之内的三个或更多个位置处测量。该方法然后包括测量印刷在光刻抗蚀剂层中的随后的一组控制图案上的尺寸，位于每个图案上或每个图案上的三个或更多个位置，其中最少三个位置与在第一组中测量的位置匹配，并且确定通过将匹配位置处的尺寸与相关依赖关系进行比较来形成随后的控制模式组相关联的有效剂量，散焦和模糊值。还公开了用于确定光刻成像中的模糊，聚焦和曝光剂量误差的方法。

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